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    JS SOT 23 Search Results

    JS SOT 23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    JS SOT 23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    JS SOT23-3

    Abstract: sot23 marking JR BAS20LT1 BAS21 BAS21DW5T1 BAS21LT1 BAS19 BAS19LT1 BAS20 MARKING JS sot-23
    Text: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT-23 3 CATHODE 1 ANODE SC-88A


    Original     		PDF BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 BAS19LT1 BAS20LT1 BAS21LT1 OT-23 SC-88A JS SOT23-3 sot23 marking JR BAS20LT1 BAS21 BAS21DW5T1 BAS21LT1 BAS19 BAS19LT1 BAS20 MARKING JS sot-23

    MARKING JS sot-23

    Abstract: BAS19 BAS19LT1 BAS19LT3 BAS20 BAS20LT1 BAS21 BAS21DW5T1 BAS21LT1 BAS21LT1G
    Text: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT−23 Features 3 1 CATHODE ANODE


    Original     		PDF BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 BAS19LT1 BAS20LT1 BAS21LT1 OT-23 SC-88A MARKING JS sot-23 BAS19 BAS19LT1 BAS19LT3 BAS20 BAS20LT1 BAS21 BAS21DW5T1 BAS21LT1 BAS21LT1G

    diode MARKING CODE jx

    Abstract: sot23 marking JR marking mh sot-23 BAS21LT1G sot-23 MARKING CODE JS 88a diode SOT-23 code marking mf
    Text: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT−23 Features 3 1 CATHODE ANODE


    Original     		PDF BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 BAS19LT1 BAS20LT1 BAS21LT1 OT-23 SC-88A diode MARKING CODE jx sot23 marking JR marking mh sot-23 BAS21LT1G sot-23 MARKING CODE JS 88a diode SOT-23 code marking mf

    Js MARKING CODE SOT23

    Abstract: No abstract text available
    Text: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT−23 Features 3 1 CATHODE ANODE


    Original     		PDF BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 BAS19LT1 BAS20LT1 BAS21LT1 OT-23 SC-88A Js MARKING CODE SOT23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Diodes BAS21/A/C/SLT1 SOT—23 SWITCHING DIODE FEATURES BAS21LT1 Marking: JS BAS21ALT1 Marking: JS2 Reverse breakdown voltage Reverse voltage Forward Diode leakage current voltage


    Original     		PDF OT-23 BAS21/A/C/SLT1 BAS21LT1 BAS21ALT1 BAS21CLT1 037TPY 950TPY 550REF 022REF

    BAS19LT1G

    Abstract: Diode SOT-23 marking Js marking 88A MF sot-23 BAS19 BAS19LT1 BAS19LT3 BAS20 BAS20LT1 sot-23 MARKING CODE JS
    Text: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT−23 Features • Pb−Free Packages are Available


    Original     		PDF BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 BAS19LT1 BAS20LT1 BAS21LT1 OT-23 BAS19 BAS19LT1G Diode SOT-23 marking Js marking 88A MF sot-23 BAS19 BAS19LT1 BAS19LT3 BAS20 BAS20LT1 sot-23 MARKING CODE JS

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS21LT1G FETURE 3 • Pb-Free Package is available. 1 2 SOT– 23 TO–236AB MAXIMUM RATINGS Symbol Value Unit Continuous Reverse Voltage Rating VR Peak Forward Current Peak Forward Surge Current


    Original     		PDF LBAS21LT1G 236AB)

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. HIGH VOLTAGE SWITCHING DIODE LBAS21HT1G 1 • Device Marking: JS 1 CATHODE • 2 ANODE 2 CASE 477, STYLE 1 SOD– 323 Pb-Free Package is Available. Ordering Information MARKING DIAGRAM Device Marking Shipping LBAS21HT1G JS 3000/Tape&Reel


    Original     		PDF LBAS21HT1G 3000/Tape LBAS21HT3G 10000/Tape

    LBAS21LT1G

    Abstract: LBAS21LT1
    Text: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS21LT1 FETURE 3 • Pb-Free Package is available. 1 2 SOT– 23 TO–236AB MAXIMUM RATINGS Rating Symbol Value VR IF 250 Vdc 200 625 mAdc mAdc Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current


    Original     		PDF LBAS21LT1 236AB) LBAS21LT1-2/3 OT-23 LBAS21LT1-3/3 LBAS21LT1G LBAS21LT1

    BAS21SLT1

    Abstract: No abstract text available
    Text: BAS21SLT1 Preferred Device Dual Series High Voltage Switching Diode • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: Class 1 ESD Rating – Machine Model: Class B http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage


    Original     		PDF BAS21SLT1 r14525 BAS21SLT1/D BAS21SLT1

    BAS21SLT1

    Abstract: No abstract text available
    Text: BAS21SLT1 Preferred Device Dual Series High Voltage Switching Diode • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: Class 1 ESD Rating – Machine Model: Class B http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage


    Original     		PDF BAS21SLT1 r14525 BAS21SLT1/D BAS21SLT1

    Untitled

    Abstract: No abstract text available
    Text: BAS21LT1 Preferred Device High Voltage Switching Diode • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: Class 1 • − Machine Model: Class B Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish http://onsemi.com


    Original     		PDF BAS21LT1 Jun50

    23marking

    Abstract: No abstract text available
    Text: BAS21SLT1 Preferred Device Dual Series High Voltage Switching Diode • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: Class 1 ESD Rating – Machine Model: Class B http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage


    Original     		PDF BAS21SLT1 23marking

    GL24

    Abstract: marking code L05 SOT 23
    Text: v G en e r a l S e m ic o n d u c t o r % GL05 thru GL24 Low Capacitance TVS Diode For High-Speed Data Interfaces TO-236AB SOT-23 Stand-off Voltage 5 to 24V Peak Pulse Power (8/20[js) 300W i •1 22 (3 .1) .110 2.8 Mounting Pad Layout .016(0.4) _ Ë Top View


    OCR Scan     		PDF O-236AB OT-23) OT-23 E8-10K 8/20ns 8/20ps GL24 marking code L05 SOT 23

    diode B14A

    Abstract: B14A diode TFK 03 Diode TFK3070D TFK 001 B14A 23 TFK 001 TFK u 269 TFK 03 TFK3070
    Text: TELEFUNKEN ELECTRONIC 17E D • O lSO O ^b P O Q Ib S l S TFK 3070 D TTIUilPiiSMKIIKI electronic Creato*1«chn0t0Q«s Preliminary specifications NPN Silicon Darlington Power Transistor , 7 * * 3 3 - 3 r Applications: • Motor-control 380 V-mains • UPS (Uninterruptible power supplies)


    OCR Scan     		PDF 00CHb51 000Rb52 T0126 15A3DIN diode B14A B14A diode TFK 03 Diode TFK3070D TFK 001 B14A 23 TFK 001 TFK u 269 TFK 03 TFK3070

    marking code SE transistors

    Abstract: No abstract text available
    Text: TELEFUNKEN ELECTRONIC 17E » • fl'ÌEDQRb DQÌHS27 è BUT 56 • BUT 56 A mJMFWKIM electronic Crttttv«Ifcfwioiog* T*- 3 3 -Ì2 Silicon NPN Power Transistors Applications: Switching mode power supply Features: • In multi diffusion technique • Short switching times


    OCR Scan     		PDF IAL66 DIN41 15A3DIN marking code SE transistors

    transistor Bc 542

    Abstract: transistor BC 56 transistor bc 144 bc 147 transistor BUT 11 Transistor transistor BC 147 transistor bc 146 c 2665 transistor BUT56 FC4A
    Text: 17E 1> • ô'iëO O 'lL 000*155? TELEFUNKEN ELE CTRONIC BUT 56 • BUT 56 A TTilUlFiyjlìSKiìii electronic Cr*ttve Tèehoo*og*s T*-33-f3 Silicon NPN Power Transistors Applications: Switching mode power supply Features: • In multi diffusion technique • Short switching times


    OCR Scan     		PDF 33-r2 a75ttti DIN41 T0126 15A3DIN transistor Bc 542 transistor BC 56 transistor bc 144 bc 147 transistor BUT 11 Transistor transistor BC 147 transistor bc 146 c 2665 transistor BUT56 FC4A

    on 2518 transistor

    Abstract: transistor BU 536 transistor BC 536 C 3311 transistor 536 transistor T-33-11
    Text: TELEFUNKEN ELECTRONIC 17E D • Ô ^ Ü O T b 000e]Liö3 3 ■ ALG6 • BU 536 'ïTifLf FMKdM electronic CreativeTecbnotojpe* T-33-11 Silicon NPN Power Transistor Applications: Switching mode power supply Features: • In triple diffusjon technique • Short switching time


    OCR Scan     		PDF T-33-11 15A3DIN on 2518 transistor transistor BU 536 transistor BC 536 C 3311 transistor 536 transistor T-33-11

    TRANSISTOR BC 208

    Abstract: transistor bc 207 npn transistor bc 209 npn transistor bc 209 b transistor Bu 208 transistor D 2588 transistor BC 209 transistor bc 207 TRANSISTOR BC 208 B 3100U
    Text: i l . •.-.— 17E D TELEFUNKEN ELECTRONIC ■ 0 1 2 0 0 ^ 0001451 1 BU 207 * BU 208 • BU 209 TTf Li(FTOKIM electronic C re itM le c h n o to g w s r - 33-07 Silicon NPN Power Transistors Applications: Horizontal deflection circuits in colour TV-receivers


    OCR Scan     		PDF r-33-07 T0126 15A3DIN TRANSISTOR BC 208 transistor bc 207 npn transistor bc 209 npn transistor bc 209 b transistor Bu 208 transistor D 2588 transistor BC 209 transistor bc 207 TRANSISTOR BC 208 B 3100U

    transistor bc 237c

    Abstract: transistor 206 BC 205 TRANSISTOR NPN bc 206 transistor bu205 BU206 AS 205 transistor bf 204 115 TRANSISTOR BC 206
    Text: TELEFUNKEN ELECTRONIC 17E D • iH E O O 'lb GOGTMM? IAL66 T BU 204 • BU 205 • bU ¿u6 TnmiPttSMKOlN] electronic Creitiv* ”ftehnOtoaiM r-2 3 ~ 0 7 Silicon NPN Power Transistors Applications; Horizontal deflection circuits in black and white TV-receivers


    OCR Scan     		PDF IAL66 15A3DIN transistor bc 237c transistor 206 BC 205 TRANSISTOR NPN bc 206 transistor bu205 BU206 AS 205 transistor bf 204 115 TRANSISTOR BC 206

    tfk 19

    Abstract: TFK 102 TFK 19 001 TFK 105 5070d TFK 282 TFK diode tfk 3b diode s .* tfk telefunken ta 750
    Text: TELEFUNKEN ELECTRONIC 17E D • TTltUiPdDMKlMelectronic 6 1 2 0 0 % DODTbbS TFK 5070 D Crwtivt Tfchnolog* Preliminary specifications NPN Silicon Darlington Power Transistor r - 3 3 - 3 r Applications: • Motor-control 380 V-mains • UPS (Uninterruptible power supplies)


    OCR Scan     		PDF T0126 15A3DIN tfk 19 TFK 102 TFK 19 001 TFK 105 5070d TFK 282 TFK diode tfk 3b diode s .* tfk telefunken ta 750

    transistor C 2615

    Abstract: bu526 js 2617 BF56 marking EAAT transistor 526
    Text: L I _-— - ^ 17E D TELEFUNKEN ELECTRONIC • Ô ^ O O R b DQ0tm'7S 4 . THIUIIFTOKIMI electronic BU 526 Crtalrv« Tèchnotogtç* r-3 3 -1 3 Silicon NPN Power Transistor Applications: Switching mode power supply Features: • In tripple diffusion technique


    OCR Scan     		PDF

    BF184

    Abstract: Bf184 transistor transistor bc 7-40 TELEFUNKEN e transistor marking ra BF 145 transistor
    Text: filC D TELEFUNKEN E LE CT RONI C TTliUiiFyKlKllNl electronic • ÔTSOGTb OQDSlbô fi 7 = 3 /-/5 - BF184 ' CreativeTechnologies Silicon NPN Epitaxial Planar RF Transistor Applications: General and controlled RF amplifier stages upt to 100 MHz Features: • Noise figure 3.S dB


    OCR Scan     		PDF BF184 569-GS BF184 Bf184 transistor transistor bc 7-40 TELEFUNKEN e transistor marking ra BF 145 transistor

    E 13003 TRANSISTOR

    Abstract: c s 13003 TRANSISTOR W 13003 TRANSISTOR 13002 TRANSISTOR transistor 13002 LM 13003 T 08 13003 transistor transistor LB 13003 C electronic ballast by transistor 13003 13003 TRANSISTOR
    Text: TELEFUNKEN ELECTRONIC 17E D • a^QO'te DDORb'S? : ■ AL GG TE 13002 TE 13003 TIiLllFlliKiKIK] electronic Crtfuv»Technotec«5 T-33-II Silicon NPN Power Transistors Applications: Switching mode power supply, electronic ballast features: • In multi diffusion technique


    OCR Scan     		PDF T-33-II 0IN41 I3-75. 15A3DIN E 13003 TRANSISTOR c s 13003 TRANSISTOR W 13003 TRANSISTOR 13002 TRANSISTOR transistor 13002 LM 13003 T 08 13003 transistor transistor LB 13003 C electronic ballast by transistor 13003 13003 TRANSISTOR