SLB9635TT12
Abstract: SLB9635TT1.2 32 inch TV samsung lcd Schematic fairchild diode smd code aa35 SC454 slb9635 BA41-00905A 20B3 diode BA09-00009A B503 F
Text: SENS X360 A B C D 4 SAMSUNG PROPRIETARY 3 4 HJ KIM Jun PARK T.R. Date 3 JS EUH APPROVAL : Dev. Step Revision CHECK BA41-00906A GCE : PR/MP : 1.1 DRAW Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page.
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BA41-00905A
220nF
12MHZ
BAV99LT1
100nF
MX25L4005AM2C-12G
15-A4
14-C2
14-C2
SLB9635TT12
SLB9635TT1.2
32 inch TV samsung lcd Schematic
fairchild diode smd code aa35
SC454
slb9635
20B3 diode
BA09-00009A
B503 F
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smd j3y
Abstract: SOT89 MARKING CODE SMD MARKING CODE j3y SOT-23 J3Y j3y smd smd code marking wl sot23 k72 sot-23 marking f5 sot-89 smd 2TY SOT-23 MARKING ka6
Text: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices PN# 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR 2SA1162-O
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1N4148W
1N4148WX
1N4148X
1N4448W
1N4448WX
1N4448X
1N914W
1SS181
1SS184
1SS193
smd j3y
SOT89 MARKING CODE
SMD MARKING CODE j3y
SOT-23 J3Y
j3y smd
smd code marking wl sot23
k72 sot-23
marking f5 sot-89
smd 2TY
SOT-23 MARKING ka6
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smd k72 y5
Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
Text: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR
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1N4148W
1N4148WX
1N4148X
1N4448W
1N4448WX
1N4448X
1N914W
1SS181
1SS184
1SS193
smd k72 y5
K72 y8
k72 y4
BAS70WT
46A gez
SMBJ8.5CA
SMBJ11CA
SMD Marking K72
sk 75 dgm
marking f5 sot-89
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BE502
Abstract: No abstract text available
Text: n iT S U n i % E L E C T R IC CO LTD 4ÔE D b55G27S G0D157S TS4 • H£CJ_ MITSUMI MONOLITHIC IC V5<í-\{43 igHŒftJiîPffl/For Low Voltage Control Monolithic IC LVC531 L V C 5 3 1 tttB A \ ? K> A Ü J * E M c ? v h S ^ I E J ! - > y ? I C t L V C 531 is a type of m onolithic IC for constant voltage control
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b55G27S
G0D157S
LVC531
LVC531A
BE502
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Untitled
Abstract: No abstract text available
Text: PD - 5.037 International Hü Rectifier CPV364MK Short Circuit Rated UltraFast IGBT IGBT SIP MODULE Features • Short Circuit Rated - 10ps @ 125°C , V qe = 15V Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses
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CPV364MK
360Vdc,
C-985
005077b
C-986
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Untitled
Abstract: No abstract text available
Text: Fiber O ptics MT1 0 8 W-UR3 Applications • Bar Code Scanning • Fiber Optics • Optical Switch Features • Visible Light Emitter • Excellent Optical/Mechanical Axis Alignment • Optical Grade Glass Lens M A XIM U M RATINGS Ta = 25°C CHARACTERISTIC
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0QQ17M7
00006CH
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FCH10A10
Abstract: fch10a10 diode diodi DIODI 10 A FCH10A H10 DIODE Diode LT 53
Text: SCHOTTKY BARRIER DIODE io a / io o v FC H 10 A 10 FEATURES O Sim ilar to T0-220AB Case o Fully Molded Isolation ODual Diodes-Cathode Common o L ow Forw ard V oltage Drop o Low Pow er Loss, High Efficiency O High Surge Capability O T j = 150'C operation 2.5 .M8>
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-220AB
FCH10A.
FCH10A10
bbl5123
00OE034
FCH10A10
fch10a10 diode
diodi
DIODI 10 A
FCH10A
H10 DIODE
Diode LT 53
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Untitled
Abstract: No abstract text available
Text: •% M 7 \/s . — 0 y ^ y y LARGE CAN TYPE ALUMINUM ELECTROLYTIC CAPACITORS MXY Low Profile with Horizontal Mounting m FEATURES • 105°C3000H#P«IK * W S » # W f 5 p nao Load Life : 105‘C 3000 hours with horizontal mounting. Suitable for flat equipment design.
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C3000H
120Hz)
00-350W
18Ap-p/10
100kHz
20X30
20X35
20X40
20X45
20X50
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Untitled
Abstract: No abstract text available
Text: WJ8 9 1993 FDC37C663 FDC37C664 STANDARD MICROSYSTEMS CORPORATION, ADVANCE INFORMATION C\iFìm 80 Arkay Drive. Hauppauge. NY 11788 516 435-8000 Fax 1516) 231-6004 Fast Serial Port Super I/O Floppy Disk Controllers FEATURES 2.88M B Super I/O Floppy Disk Controller
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FDC37C663
FDC37C664
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Untitled
Abstract: No abstract text available
Text: R eflective S w itch TLP908/ LB A pplications • Detection of Start and End Marks of VCR, Audio Tape • Detection of VCR Reel Location • Detection of Diskette Index Write Protect • Timing Detection of Electronic Printer and Typewriter • Reading of Camera Film Information (DX Code)
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TLP908/
TLP908:
TLP908
98-4LEDS
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Untitled
Abstract: No abstract text available
Text: l4 3 D 5 5 7 1 0DS3fin TT4 • HAS BUZ351 ££ HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1991 Package Features T O -2 1 8 A C • 11.5 A, 400V T O P VIE W • rDS on) = 0 .4 fl • SOA is Power-Dissipation Limited SO URCE D R A IN
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BUZ351
BUZ351
00S3S22
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs Some contents are subject to change without notice. MH32/64R18BUP-408,458,536 DESCRIPTION The M H 32/64R 18B U P is the Direct Rambus RIM M ™ module. This consists of eight/sixteen industry 4M x18 Direct Rambus DRAM Direct R D R A M ™ ¡n M -C S P and one industory standard
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MH32/64R18BUP-408
MH32/64R18BUP
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LE50A
Abstract: No abstract text available
Text: 1DI5OMA-O5O 50a j .- ; u POW ER TR A N S ISTO R M ODULE : Features • hFE*'“! ^ High DC Current Gam High speed switching + 7 s {" jif- 's y 7 s )d — • Insulated Type • f f l i â • A p p lic a t io n s Pow er Switching 1— * * { > '< — 9
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l95t/R89
LE50A
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Untitled
Abstract: No abstract text available
Text: PD - 9.1356D International IG R Rectifier IRF7416 HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • P-Channel Mosfet • Surface Mount • Available in Tape & Reel • Dynamic dv/dt Rating • Fast Switching Voss = -30V Ftas on = 0 .0 2 Q
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1356D
IRF7416
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mc-4r128cke
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4R128CKE6B Direct Rambus DRAM RIMM™ Module 128M-BYTE 64M-WORD x 16-BIT Description The Direct Rambus RIMM module Is a general purpose high-performance memory module subsystem suitable for
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MC-4R128CKE6B
128M-BYTE
64M-WORD
16-BIT)
MC-4R128CKE6B
uPD488448
600MHz,
800MHz
JSIU83-J01U0Q
IAI31I
mc-4r128cke
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4R96CKE6B Direct Rambus DRAM RIMM™ Module 96M-BYTE 48M-WORD x 16-BIT Description The Direct Rambus RIMM module Is a general purpose high-performance memory module subsystem suitable for
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MC-4R96CKE6B
96M-BYTE
48M-WORD
16-BIT)
MC-4R96CKE6B
uPD488448
600MHz,
800MHz
JSIU83-J01U0Q
IAI31I
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TRANSISTOR SMD MARKING CODE 702
Abstract: 702 Z smd TRANSISTOR 702 Z TRANSISTOR smd TRANSISTOR SMD 702 N 702 H transistor smd smd diode 708 TRANSISTOR SMD MARKING CODE 702 4 702 y smd TRANSISTOR 703 TRANSISTOR smd 702 TRANSISTOR smd
Text: Infineo n |m p ,° v e d technologies f c — BUZ 104SL • SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage Vds • Enhancement mode Drain-Source on-state resistance f l DS on • Avalanche rated Continuous drain current
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BUZ104SL
BUZ104SL
P-T0220-3-1
Q67040-S4006-A2
E3045A
P-T0263-3-2
Q67040-S4006-A6
E3045
TRANSISTOR SMD MARKING CODE 702
702 Z smd TRANSISTOR
702 Z TRANSISTOR smd
TRANSISTOR SMD 702 N
702 H transistor smd
smd diode 708
TRANSISTOR SMD MARKING CODE 702 4
702 y smd TRANSISTOR
703 TRANSISTOR smd
702 TRANSISTOR smd
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Direct-Rambus-RIMM
Abstract: MC-4R256CEE6B MC-4R256CEE6C uPD488448
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-4R256CEE6B, 4R256CEE6C Direct Rambus DRAM RIMM™ Module 256M-BYTE 128M-WORD x 16-BIT Description The Direct Rambus RIMM module Is a general purpose high-performance memory module subsystem suitable for
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MC-4R256CEE6B,
4R256CEE6C
256M-BYTE
128M-WORD
16-BIT)
4R256CEE6C
uPD488448
600MHz,
800MHz
Direct-Rambus-RIMM
MC-4R256CEE6B
MC-4R256CEE6C
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MC-4R96CEE6B
Abstract: MC-4R96CEE6C uPD488448
Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4R96CEE6B, 4R96CEE6C Direct Rambus DRAM RIMM™ Module 96M-BYTE 48M-WORD x 16-BIT Description The Direct Rambus RIMM module Is a general purpose high-performance memory module subsystem suitable for
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MC-4R96CEE6B,
4R96CEE6C
96M-BYTE
48M-WORD
16-BIT)
4R96CEE6C
uPD488448
600MHz,
800MHz
MC-4R96CEE6B
MC-4R96CEE6C
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MC-4R128CEE6B
Abstract: MC-4R128CEE6C uPD488448
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-4R128CEE6B, 4R128CEE6C Direct Rambus DRAM RIMM™ Module 128M-BYTE 64M-WORD x 16-BIT Description The Direct Rambus RIMM module Is a general purpose high-performance memory module subsystem suitable for
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OCR Scan
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MC-4R128CEE6B,
4R128CEE6C
128M-BYTE
64M-WORD
16-BIT)
4R128CEE6C
uPD488448
600MHz,
800MHz
MC-4R128CEE6B
MC-4R128CEE6C
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4R192CKE6B Direct Rambus DRAM RIMM™ Module 192M-BYTE 96M-WORD x 16-BIT Description The Direct Rambus RIMM module Is a general purpose high-performance memory module subsystem suitable for
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MC-4R192CKE6B
192M-BYTE
96M-WORD
16-BIT)
MC-4R192CKE6B
uPD488448
600MHz,
800MHz
JSIU83-J01U0Q
IAI31I
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uA723
Abstract: uA723C UA723CH uA723 12 pin IC UA723CF ic ua723 cn avj3 UA723 h metal case UA723A
Text: 7flC D I S G S-T HONSON DGDbSbE 1 | 7* s ? - / / . z s UA723 UA723A T8C 06262 D PRECISION ADJUSTABLE POSITIVE VOLTAGE REGULATORS The UA723,A is a monolithic voltage regulator constructed on a single silicon chip. The device consists of a temperature compensated reference amplifier,
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UA723
UA723A
7TSTS37
uA723C
UA723CH
uA723 12 pin IC
UA723CF
ic ua723 cn
avj3
UA723 h metal case
UA723A
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T1C226M
Abstract: tic226m TIC226B T1C226 TIC226E TEXAS TIC226D
Text: INSTR bE -COPTO} “3 9 6 4 7 2 6 T E X A S Dlf| I N S T R COPTO 003b7SM 62C 3 6 7 2 4 TIC226A, TIC226B, TIC226C, TIC226D, TIC216E, TIC226M, TIC226S, TIC226N SILICON TRIACS R EV ISED OCTOBER 1984 • Sensitive-GateTriacs • 100 V to 800 V • 8 A RMS, 70 A Peak
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003b7SM
TIC226A,
TIC226B,
TIC226C,
TIC226D,
TIC216E,
TIC226M,
TIC226S,
TIC226N
T0-22
T1C226M
tic226m
TIC226B
T1C226
TIC226E
TEXAS TIC226D
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ccd camera module
Abstract: QFP144-P-2020 CCD Linear Image Sensors DIODE MARKING B85 L69A TQFP100-P-1414 b86a T07 marking
Text: Package Outlines MOS LSI L O U 170 MOS Memories (M H O ) 185 CCD Area/Linear Image Sensors (C C O ) 190 CCD Camera Modules ( C C Q 193 TFT LCD Device (C C D ) 193 Bipolar IC s (B Q D ) 194 Discrete Semiconductors (DQZJ) 208 169 Package Outlines (MOS LSI)
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DIP008-P-0300
DIP014-P-0300C
DIP014-P-0300A
DIP018-P-0300D
DIP014-P-0300B
HDIP014-P-0300F
DIP016-P-0300A
DIP016-P-
SIL-10)
SIL-12)
ccd camera module
QFP144-P-2020
CCD Linear Image Sensors
DIODE MARKING B85
L69A
TQFP100-P-1414
b86a
T07 marking
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