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    JS 7 DIODE Search Results

    JS 7 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    JS 7 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: S N 5 4 /7 4S 81 8 8-Bit SERDE Pipeline Register Ordering Inform ation Features/B enefits • High drive capability. Io l = 32 mA Com PART NUMBER PACKAGE TEMPERATURE SN74S818 NS, JS, NL (28) Com SN54S818 JS, W, L (28) Mil • Alternate source to Am29818


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    PDF SN74S818 SN54S818 Am29818 24-pin

    D5S4M

    Abstract: No abstract text available
    Text: 2 /a v h + - K U 7 S W - I * Schottky Barrier Diode Single Diode OUTLINE DIMENSIONS D5S4M 40V 5A >Tjl50°C P rrsm 7 7 V 'J i ffiiE > 7 , llÆ - , lb K > S R S ;H > D C / D C n : y A '- ^ O A H tg I jS f e s Ttt— RATINGS Absolute Maximum Ratings a Storage Temperature


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    PDF Tjl50 J515-5 D5S4M

    Untitled

    Abstract: No abstract text available
    Text: Outline Ü l T c C D ' ^ - x A - f 7>ß7'J P K. V 3 - V h Shindengen has an abundance of power devices, such K, P - * - K as bridge diode, super fast recovery diode, schottky , K, A 7 - ^ 7 > y X $ , M O S F E T Ü lp p £ * * KIX ^JSä., ^ 6it Ü t f t f


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    PDF

    4518 counter truth table

    Abstract: No abstract text available
    Text: SbE D • 7 ^ 8 3 7 0D40MM3 IflT ■ SG TH _ G L M54/ 74HC4518 M54/ 74HC4520 SGSTHOMSON ■[LiraMD0 S S G S-THOMSON , T - jS - 2 3 - r S HC4518 DUAL DECADE COUNTER HC4520 DUAL 4 BIT BINARY COUNTER ■ LOW POWER DISSIPATION


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    PDF 0D40MM3 74HC4518 74HC4520 HC4518 HC4520 HC4520 54/74HC S-10117 4518 counter truth table

    Untitled

    Abstract: No abstract text available
    Text: RECTIFIER, January 7, 1998 up to 6kV, 260mA, 5|JS TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED HIGH VOLTAGE STANDARD RECOVERY RECTIFIER DIODE • • • • • M50A M60A QUICK REFERENCE DATA Vr = 5kV - 6kV


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    PDF 260mA, TEL805-498-2111 260mA

    HIGH VOLTAGE DIODE 3kv

    Abstract: No abstract text available
    Text: is t i January 7, 1998 RECTIFIER, up to 3kV, 600mA, 2.5|JS 1N3645 1N3646 1N3647 SM20 SM25 SM30 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED HIGH VOLTAGE STANDARD RECOVERY RECTIFIER DIODE Q UICK REFERENCE DATA


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    PDF 600mA, 1N3645 1N3646 1N3647 TEL805-498-2111 600mA 1N3647 HIGH VOLTAGE DIODE 3kv

    Untitled

    Abstract: No abstract text available
    Text: pjj .— j RECTIFIER, up to 1kV, 3.5A, 2.5|JS 3PM2 3PM6 3PM4 3PM8 3PM0 January 7, 1998 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED STANDARD RECOVERY RECTIFIER DIODE • • • • • QUICKREFERENCE DATA


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    PDF TEL805-498-2111

    TCA150

    Abstract: No abstract text available
    Text: 7 2 9 4 6 2 1 POWEREX INC D E § 7 B cl 4t,21 D0QE171 y / jp iA M n E r* ^ V V M Ec fflE A 3 f 7^ 33 JS ~ " D66EV Fast Switching Single Darlington Transistor Module D66DV Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 412 925-7272 50 Amperes


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    PDF D0QE171 D66DV D66EV D66DV, Amperes/500- 000B17L TCA150

    Untitled

    Abstract: No abstract text available
    Text: APEX MICROTECHNOLOGY CORP SIE D 007flb3b OOOOTbD T '7 ^ - 2 3 FEATURES • • • • • • 7 HIGH SLEW RATE - 200V/ps FAST SETTLING TIME - .1% in 1/js PA84S FULLY PROTECTED INPUT - Up to ±150V LOW BIAS CURRENT, LOW NOISE - FET Input WIDE SUPPLY RANGE - ±15V to ±150V


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    PDF 007flb3b 00V/ps PA84S) BB3584JM PA84S, 1200VDC PD12/60S: 500VDC PD12/60C: 300VDC

    D 843 Transistor

    Abstract: irf 840 TRANSISTOR 841 sgs 841 IRF 80A D 843 Power Transistor irf z 44 st irf 44 n transistor irf 840 thomson tv
    Text: 30E 3> • 7 ^ 2 3 7 002^01^ 7 ■ ^ T : 3 °l~ i3 / 7 7 SG STHO M SO N IR F 8 4 0 / F I - 8 4 1 /F I 4 7 l a [^D^ Q i[L[i(glF^(Q)K!]D(gi_ IR F 8 4 2 / F I - 8 4 3 / F 1 jS fi S - thomson" TYPE IRF840 IRF840FI IRF841 IRF841FI IRF842 IRF842FI IRF843


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    PDF 840/FI-841 842/FI-843/FI IRF840 IRF840FI IRF841 IRF841FI IRF842 IRF842FI IRF843 IRF843FI D 843 Transistor irf 840 TRANSISTOR 841 sgs 841 IRF 80A D 843 Power Transistor irf z 44 st irf 44 n transistor irf 840 thomson tv

    Untitled

    Abstract: No abstract text available
    Text: 190239 Rev 0; 7/94 JV K Æ A A JS A 50m A, Frequency-Selectable, Sw itched-C apacitor Voltage Converters _A p p licatio n s Portable Computers Medical Instruments Interface Power Supplies Hand-Held Instruments Operational-Amplifier Power Supplies


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    PDF MAX860) 600mV MAX860CSA MAX860CUA MAX860C/D MAX860ESA MAX860MJA MAX665, ICL7660 MAX660,

    D66DV7

    Abstract: POWEREX INC TCA 700 y D66DV D66EV D66EV7
    Text: 7 2 9 4 6 2 1 POWEREX INC D E § 7 B cl 4 t , 2 1 D0QE171 3 f 7 ^ 3 3 JS ~ D66DV D66EV 'G W E R E X Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 412 925-7272 Fast Switching Single Darlington Transistor Module 5 0 A m p e re s 5 0 0 -6 0 0 -7 0 0 V o lts


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    PDF 17ET4tiSl D0QE171 D66DV D66EV D66DV, D66EV 40MKU0lt0HÂ D66DV7 POWEREX INC TCA 700 y D66EV7

    IRF621

    Abstract: IRF620
    Text: ZETEX SEMICONDUCTORS *JS]> D •=1=170570 OOOSSbS 3 ■ 95D 0 5 5 6 5 3 ^* 7/ IRF620 IRF621 IRF622 IRF623 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability


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    PDF IRF620 IRF621 IRF622 IRF623 O-220

    Untitled

    Abstract: No abstract text available
    Text: •I QOOflDlQ 5T6 ■ R H M — K /L ig h t Emitting Diodes v E.MM'7>7° 2X5mm A P w fc I SLT-25 Series S e rie s Triangular Lamps • #Jfi>l'äs|3|/Dim ensions (Unit : mm) S L T -2 5 y U - X l i , S fttfim c G a P jS 2 X 5 m m « - ^ > 2 H M iiS J Jgi7>7T't'c, A 7 «Dirt


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    PDF SLT-25

    Untitled

    Abstract: No abstract text available
    Text: y a v h 7 Schottky Barrier Diode S Twin Diode MMrtfèm D10SC4M OUTLINE DIMENSIONS C a se : ITO-220 40V 10A • T j 15013 • P rr sm ffl & •S R g • D C / D C H V A '- ^ 0 A * ü •m m . > f - h . • a s , x — s > 7 u m s i •i&Ë&JS^AElfë Absolute Maximum Ratings


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    PDF D10SC4M ITO-220 GQD3S13

    Untitled

    Abstract: No abstract text available
    Text: 3QE » • 7 ^ 2 C 2 3 7 0D30734 H ■ ^ p 3 > °M £ fZ J SCS-THOMSON Ä 7# [M ^ m ie T T IM O tg S IR FK 4 H250 'T js S-THÖMSÖN N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE IR FK4H 250 V dss Ros on) Id 200 V 0 .02 1 Q 108 A . ■ . ■


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    PDF 0D30734 SC04720 T-91-20 O-240) PC-029«

    SIR-320ST

    Abstract: No abstract text available
    Text: • 7Ö E f l c3T ^ iz > V /Sensors OOOfllbS STt. I RHM SIR-320ST SIR-320ST GaAs Infrared Light-Emitting Diode • /Dimensions Unit : mm SIR-320ST tJ, jS R flfflS B ii.lL T 'M !? mmo GaAs m m y t ? < * - k ? t 0 A ''iii< , y U - 1> § ? 3 te S -P lc 3 1


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    PDF SIR-320ST SIR-320ST 940nm COi63t^ 950nm)

    LZL -60-C

    Abstract: Sony ICX205AL ivo 9140 ICX205AL sony kv LSH20 mt 1392 8e01 SONY 171 V32B
    Text: SONY ICX205AL IC X 205A L i, * f^ 8 m m y ? 7 ( 1 /2 Ü Í ^ J 1 4 5 ^ ^ > M C C D @ fë itiii? ï^ 4 to ¿ 0, ^)l/7.5^>-e ä fc, iÌ jì È Kÿ 7 h -t — K i 30 f r a me / s e c ^ ^ jS ñ T fb ^ l-o '7 L, -F > Ä - Ä ^ v t y ? Í S L ‘Ü 7 A ':7 V'


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    PDF ICX205AL ICX205AL fcifclQ24TV* J2567 30frame/sec) 318MHz X1050 Jl50OTf^ X1040 X1024 LZL -60-C Sony ICX205AL ivo 9140 sony kv LSH20 mt 1392 8e01 SONY 171 V32B

    Untitled

    Abstract: No abstract text available
    Text: 2DI5OZ-12O 50a > \.— V POW ER T R A N S IST O R M ODULE : Features • ¡SW/ï High Voltage • 7 V —f r 'f !J > 9 9 -4 • A S O é '- jS ^ • ÎÊS lJfÎ KF*9i Including Free Wheeling Diode Excellent Safe Operating Area Insulated Type Applications


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    PDF 2DI5OZ-12O 1995-9095t/R89

    t 317 transistor

    Abstract: bjc 2100 diode um 42A smd diode sm 3c kd smd transistor IOR 451
    Text: PD - 91729 International IÖR Rectifier IRG4ZH71KD PRELIMINARY Surface Mountable Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High sh o rt circu it rating op tim ized fo r m otor control, tsc = 1 0|js, V c c = 7 2 0 V , T j = 125°C,


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    PDF IRG4ZH71KD t 317 transistor bjc 2100 diode um 42A smd diode sm 3c kd smd transistor IOR 451

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEMICOND SECTOR 37E D • l4302271 002SM47 7 H H A S •' _ Technical Data Advance Information CD54/74AC161, CD54/74AC163 CD54/74ACT161, CD54/74ACT163 'T A S - Z Z - O Z PO P1 SPÎ — « -2 sra — pe — w -JS . Synchronous Presettable Binary Counters


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    PDF 002SM47 CD54/74AC161, CD54/74AC163 CD54/74ACT161, CD54/74ACT163 CD54/74AC161 CD54/74ACT161 CD54/74ACT163 92CS-38928R2

    NPN DARLINGTON POWER module isotop

    Abstract: t333b my50 ESM7545DF ESM7545DV
    Text: ESM7545DF ESM7545DV r Z 7 SG S-THO M SO N ^ 7# iMiiKBiRiûiiuasiriaepinEgî T lò - 'jS ' S S S-THOMSON NPN DARLINGTON POWER MODULE . . . HIGH C U R RENT PO W ER BIPO LAR M O DULE V E R Y LO W Rth JU N C TIO N CASE SPECIFIED AC C ID E N TA L O V ER LO A D


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    PDF ESM7545DF ESM7545DV ESM7545DV ESM7545DF T-91-20 O-240) 80J2S NPN DARLINGTON POWER module isotop t333b my50

    ERG75

    Abstract: H150 T810 T930 EB4P
    Text: ERG75 45A JS S S a fc ^ - f * - K : O u tlin e D r a w in g s FAST RECOVERY DIODE M f t - R • F e a tu re s : t — Pl aner chip • V 7 Y i)1j '<1)— Soft recovery type • Stud mounted : Applications • Switching power supplies Free-wheel diode •


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    PDF ERG75 ERG75 50HzjBÂ iLfti80\ eBTB30Â egTS30S3^ I95t/R89) H150 T810 T930 EB4P

    Untitled

    Abstract: No abstract text available
    Text: y a 7 K Schottky Barrier Diode ÿ ' - f i — K i v u — vu Diode Module OUTLINE DIMENSIONS D360SC5M Case : Modules 50V 360A ia a •S V f • * S JS R » S •D C /D C • IC x T .^ - Mfcfèm RATINGS •ifeë&tJI^/Ëfë Absolute Maximum Ratings « Item Storage Temperature


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    PDF D360SC5M