JMC 5701 Search Results

JMC 5701 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
MLC1265-701MLC		Coilcraft Inc	General Purpose Inductor, 0.7uH, 20%, 1 Element, Iron-Core, SMD, 4541, CHIP, 4541, ROHS COMPLIANT
MLC1265-701MLB		Coilcraft Inc	General Purpose Inductor, 0.7uH, 20%, 1 Element, Iron-Core, SMD, 4541, CHIP, 4541, ROHS COMPLIANT
XFL4015-701MEB		Coilcraft Inc	General Purpose Inductor, 0.7uH, 20%, 1616,
MLC1265-701MXB		Coilcraft Inc	General Purpose Inductor, 0.7uH, 20%, 1 Element, SMD, ROHS COMPLIANT
XFL4015-701ME		Coilcraft Inc	Power inductor, 20% tol, SMT, RoHS, halogen-free

JMC 5701 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
TF800BB14-061 Abstract: P1999 8051 microwave oven ec 9410 cf K 2676 9343-11R1 TF800BA14-061 2320-1SL 9816SL 9410-3SL-1 Text: < ] ^ _dZkijho$@e^Wdied^Wibed]X[[dh[Ye]d_p[ZWiW $ J^[jhWZ_j_edYedj_dk[i°	Original	JK-943L 9343-11R1 9343-12R1 9343-13R1 9343-14R1 9343-16R1 9343-18R1 JK-943H TF800BB14-061 P1999 8051 microwave oven ec 9410 cf K 2676 9343-11R1 TF800BA14-061 2320-1SL 9816SL 9410-3SL-1	PDF
transistor c1213 Abstract: c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 G200 transistor Rf C1213 Text: PTF 10009 85 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10009 is an 85–watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. This device operates at 50% efficiency with 13 dB gain. Nitride surface passivation and full	Original	1-877-GOLDMOS 1522-PTF transistor c1213 c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 G200 transistor Rf C1213	PDF
CHARACTERISTIC OF TRANSISTOR C1213 Abstract: transistor c1213 c1213 transistor transistor Rf C1213 G200 Text: PTF 10009 85 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10009 is an 85 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 50% efficiency and 13.0 dB of gain. Nitride surface passivation and full gold metallization	Original	1-877-GOLDMOS 1301-PTF CHARACTERISTIC OF TRANSISTOR C1213 transistor c1213 c1213 transistor transistor Rf C1213 G200	PDF
Untitled Abstract: No abstract text available Text: Prototype Kits v4aM&L Air Capacitor 9300 Series Kit JM C KIT JK -500 QUA NTITY JM C K IT JK -930 QUA NTITY 5201 3 .8 t o 10 9308 5 2 .5 t o 23 5202 3 .8 t o 10 9309 5 4 .0 to 3 4 5701 3 .6 t o 6 9310 5 5 .5 t o 4 5 5702 3 .6 t o 6 9372 10 3 .0 t o 10 5801	OCR Scan	-272SM -943L 343-11R1 9343-12R1	PDF
PC26J Abstract: No abstract text available Text: 5700 Series Air Capacitor .6 to 6pF PRODUCT ‘ ID E N T I F I C A T IO N TUN IN G SLOT T U N IN G SLO T -0 2 0 W X . 1 2 ‘ . 235 .2 1 5 P 1 .3 2 R E F j_ . 16 .(REE) .0 4 7 0 ' # 1 0 ( . 1 9 0 ) —6 4 # 1 0 ( . 1 9 0 ) —6 4 U N S -2 A U N S -2 A	OCR Scan	PC25J060 PC26J060 Mil-C-14409 PC31J060 PC26J	PDF
transistor c1213 Abstract: c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 transistor Rf C1213 C1213 jmc 5701 Text: ERICSSON ^ PTF 10009 85 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The 10009 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 85 watts minimum output power. Nitride surface	OCR Scan	20AWG, transistor c1213 c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 transistor Rf C1213 C1213 jmc 5701	PDF
A5 GNE mosfet Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA	OCR Scan	1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor	PDF
jrm a55 Abstract: tip 0ff 0401 ANALOG irf 5630 ko 224 4K tantalum capacitors jrm a45 irf 7408 bt 4840 pinout diagram A9F7 29 INCH crt tv FBT pinout chassis 3111 253 3266 2e jrm A45 Text: PR E FA C E T he IBM P erson al C o m p u te r T ech n ical R eferen ce M anual is designed to pro v id e h ard w are design an d in terfa ce in fo rm atio n . T h is p u b licatio n also provides B asic In p u t O u tp u t S y stem B IO S in fo rm atio n as w ell as p ro g ram m ing su p p o rt m a tter.	OCR Scan	64/256K RS232C-A jrm a55 tip 0ff 0401 ANALOG irf 5630 ko 224 4K tantalum capacitors jrm a45 irf 7408 bt 4840 pinout diagram A9F7 29 INCH crt tv FBT pinout chassis 3111 253 3266 2e jrm A45	PDF
Tr431 Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76 Text: I RJ 1 international, rectifier IR R e p la c e m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 700 21012 AA200	OCR Scan	25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76	PDF