1771-CJ
Abstract: ss100 transistor PLC-2 Communication cables pin diagram 178-442 DF1 PROTOCOL Allen-Bradley cvim 1784-T35 rack 1771-DA 6008-SI 2801-NC17
Text: ALLEN-BRADLEY Bulletin 5370 CVIM Configurable Vision Input Module Communications Manual Important User Information Solid state equipment has operational characteristics differing from those of electromechanical equipment. “Safety Guidelines for the Application,
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5370-ND002
1771-CJ
ss100 transistor
PLC-2 Communication cables pin diagram
178-442
DF1 PROTOCOL
Allen-Bradley cvim
1784-T35 rack
1771-DA
6008-SI
2801-NC17
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PHP24N03T
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance
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O220AB
PHP24N03T
PHP24N03T
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PHB24N03T
Abstract: PHP24N03T
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device
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OT404
PHB24N03T
PHB24N03T
PHP24N03T
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PSMN060-200P
Abstract: PSMN057-200P
Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PSMN057-200P SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 200 V ID = 39 A
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PSMN057-200P
PSMN060-200P
O220AB)
PSMN057-200P
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PSMN057-200B
Abstract: No abstract text available
Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PSMN057-200B SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 200 V ID = 39 A
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PSMN057-200B
PSMN057-200B
OT404
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transistor gl 1117
Abstract: MGP485 Transistor gl 1117 B BLW60C IEC 320 C13 MSB056 MGP480
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW60C VHF power transistor Product specification File under Discrete Semiconductors, SC08a March 1993 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,
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BLW60C
SC08a
transistor gl 1117
MGP485
Transistor gl 1117 B
BLW60C
IEC 320 C13
MSB056
MGP480
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transistor gl 1117
Abstract: trimmer 3-30 pf BLW60C MSB056
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW60C VHF power transistor Product specification March 1993 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial
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BLW60C
transistor gl 1117
trimmer 3-30 pf
BLW60C
MSB056
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Power Semiconductor Applications Philips Semiconductors
Abstract: "Power Semiconductor Applications" Philips "CHAPTER 1 Introduction to Power Semiconductors" CHAPTER 1 Introduction to Power Semiconductors "static induction thyristor" varistor 503 static induction Thyristor TELEVISION EHT TRANSFORMERS 201 Static Induction Thyristor varistor 10c 471
Text: Thermal Management Power Semiconductor Applications Philips Semiconductors CHAPTER 7 Thermal Management 7.1 Thermal Considerations 553 Thermal Management Power Semiconductor Applications Philips Semiconductors Thermal Considerations 555 Thermal Management
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BLW85
Abstract: gp550 SOt123 Package TP200
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW85 HF/VHF power transistor Product specification March 1993 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and
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BLW85
BLW85
gp550
SOt123 Package
TP200
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8860 MARKING
Abstract: No abstract text available
Text: D2 PA K BUK765R0-100E N-channel TrenchMOS standard level FET Rev. 2 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high
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BUK765R0-100E
OT404
8860 MARKING
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Untitled
Abstract: No abstract text available
Text: D2 PA K BUK6C1R5-40C N-channel TrenchMOS intermediate level FET Rev. 1 — 5 August 2011 Objective data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and
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BUK6C1R5-40C
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Untitled
Abstract: No abstract text available
Text: D2 PA K BUK965R8-100E N-channel TrenchMOS logic level FET Rev. 1 — 4 April 2012 Objective data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high
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BUK965R8-100E
OT404
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PSMN057-200P
Abstract: No abstract text available
Text: TO -22 0A B PSMN057-200P N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 — 4 January 2011 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for
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PSMN057-200P
PSMN057-200P
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Untitled
Abstract: No abstract text available
Text: D2 PA K PSMN057-200B N-channel TrenchMOS SiliconMAX standard level FET 15 August 2013 Product data sheet 1. General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified
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PSMN057-200B
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BLW 82
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'lE » bb53T31 QQ2T4MT 374 J APX DLVVO O V H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized and
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bb53T31
BLW 82
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE fc^E D bbsa^i dos^ m tsd i IAPX BLW60C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized
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BLW60C
nsforFigs16and17:
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Untitled
Abstract: No abstract text available
Text: N ANER PHILIPS/DISCRETE DbE D tab53^31 0015243 S RZ2833B15W r - 33-/3 MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base ciass-C broadband pulse power amplifier, operating in the 2.8 to 3.3 GHz frequency range.
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tab53
RZ2833B15W
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RZ2833B15W
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE Oh E D UÈ t a b 's T ^ l X 0D1SE43 S • “ T - 33-13 MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base class-C broadband pulse power am plifier, operating in the 2.8 to 3.3 GHz frequency range.
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0015E43
RZ2833B15W
T-33-13
RZ2833B15W
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FT501
Abstract: No abstract text available
Text: BD949; 951 BD953; 955 5bE D PHILIPS INTERNATIONAL • 711002b □ 0 4 3 0 t]fl b^7 H P H I N T-J3-H SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic T 0-22 0 envelope. With their p-n-p complements BD950; 952; 954 and 956 they are intended for use in a wide range of power amplifiers and for switching applications.
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BD949;
BD953;
711002b
BD950;
BD949
BD951
BD953
7110fl2b
FT501
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BUZ84
Abstract: t03 package transistor pin dimensions V103 TRANSISTOR V103 transistor t03 buz84 ma
Text: N AMER PH IL IPS/ DI SC RE TE ObE D P o w e rM O S tra n s is to r • ^53=131 QDlMblt 1 ■ B U Z 84 ^ - 5 ^ 1 3 July 1987 QUICK REFERENCE DATA PARAMETER SYMBOL Draln-source voltage VDS Drain current d.c. Id Total p*wer dissipation *tot Drain-source on-state resistance
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BUZ84
ttS3131
T-39-13
Q0147QE
t03 package transistor pin dimensions
V103 TRANSISTOR
V103
transistor t03
buz84 ma
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BUZ84
Abstract: t03 package transistor pin dimensions BU184 TRANSISTOR 13-h
Text: N AMER PHILIPS/DISCRETE ObE D • ^53=131 QDlMblt 1 ■ BUZ 84 ^ - 5 ^ 1 3 PowerMOS transistor July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in
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BUZ84
Q0147QE
T-39-13
BIXZ84
BUZ84
t03 package transistor pin dimensions
BU184
TRANSISTOR 13-h
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BD949
Abstract: BD949 philips bd955 BD951 BD953 b0949 b0951 BD950 D102I
Text: BD949; 951 BD953; 955 J PHILIPS INTERNATIONAL 5bE D • 711002b 00430^0 bT? ■ P HIN 7 ^ 7 3 - / / SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic T 0 -2 2 0 envelope. W ith their p-n-p complements BD950; 95 2 ; 9 5 4 and 9 5 6 they are intended for use in a wide range o f power amplifiers and for switching applications.
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BD949;
BD953;
711Dfi2b
T0-220
BD950;
BD949
BD951
BD953
BD955
7Z82140
BD949 philips
bd955
b0949
b0951
BD950
D102I
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transistor k 385
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK456-800A/B
BUK456
-800A
-800B
T0220AB
transistor k 385
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LD25C
Abstract: BUK456 BUK456-800A BUK456-800B T0220AB
Text: N AUER P H I L I P S / D I S C R E T E b'lE D • bbS3131 □D3DfccIQ 4 1 7 W A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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bbS3131
30bRQ
BUK456-800A/B
T0220AB
BUK456
-800A
-800B
LD25C
BUK456-800A
BUK456-800B
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