2n2369 avalanche
Abstract: 2n4949 2N7373 2N1711 gc. marking 2N1131 2N2222 2N2369 2N2432 2N2484
Text: Open Project Status Spec Tech Action Status 114 H RK CORRECTION TO CONFORMANCE INSP FORMAT FD TO EDIT 6 APR 2010 9/29/2009 124 RK CORRECTION TO TEST RATINGS TABLE ID TO EDIT 23 OCT 2010 6/15/2010 177 H GC 2N1131 ADD FREQ TO A4, HOB, HIB AND HRB DATED TO TOM 29 OCT 2010
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2N1131
2N718A
2N1711
2N4949
5961-E084
5980-E011
5980-E010
5961-E087
5961-E079
2n2369 avalanche
2N7373
gc. marking
2N2222
2N2369
2N2432
2N2484
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ks823c
Abstract: No abstract text available
Text: FUJI '95 No.1£ [ s U , [ i È i i JjÇ àL:_ ~ ± m S e:m'-i-Go ri d u .ct o r N e W- P r ó d ü V 3 7 9 0 V /5 A SCHOTTKY BARRIER DIODE KS823C09 mm JH Features • i ; l £ l a nn S urface m ount device • Lew V f S Lper high spe ed sw itching Hi jh reliability by planer design
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KS823C09
301FI
ks823c
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c4231
Abstract: c4231 transistor trw RF POWER TRANSISTOR THC4231 trw rf transistor THC4231X1B THC4231X1V
Text: JH AT THC4231 ttxw w Wide Bandwidth Fast Settling Operational Amplifier 165MHz Closed Loop Bandwidth The THC4231 is a wide bandwidth fast settling opera tional amplifier designed specifically for high-speed, lowgain applications. The op amp design is based on current
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THC4231
165MHz
THC4231
anD-883
T0-8/M0-12)
THC4231X1V
c4231
c4231 transistor
trw RF POWER TRANSISTOR
trw rf transistor
THC4231X1B
THC4231X1V
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scr vrrm 6000
Abstract: 1S697 BP107 FT250DM FT250DM-16 SCR 1A 50V
Text: "□a POWEREX INC D E I 7Sci4bai 0005^20 1 f ~ T- 2 5 —19 m jH u a w x FT250DM Powerex, Inc. Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Ave. G. Durand, BP107, 72003 LeMans, France (43) 72.75.15 Phase Control SCR
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T-25-19
FT250DM
BP107,
FT250DM
Amperes/200-1800
all-15
Avg/200-1800
scr vrrm 6000
1S697
BP107
FT250DM-16
SCR 1A 50V
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Untitled
Abstract: No abstract text available
Text: FUJI 94 No. 6 m ±*m j 2MBI200N-060 J 600V / 200A/ 2 flSifl •Features High Speed Switching • H JH E ib Voltage Drive Low Inductance Module Structure : Applications • i 3 > '< — ? • A C jD C + f — Inverter for Motor Drive AC and DC Servo Drive Amplifier
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2MBI200N-060
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LT 428
Abstract: No abstract text available
Text: "□a POWEREX INC D E I 7Sci4bai 0005^20 1 f ~ T-25—19 m jH u a w x FT250DM Powerex, Inc. Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Ave. G. Durand, BP107, 72003 LeMans, France (43) 72.75.15 Phase Control SCR 250 Amperes Avg
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T-25--
BP107,
FT250DM
peres/200-1800
LT 428
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hJST
Abstract: hjst 16 2SK2029-01L A2370 m777
Text: 2SK2029-01 L S FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES Outline D raw ings ¡F e a tu re s ►Hi: jh speed switching >Low on-resistanoe >Nc secondary breakdown »Low driving power ►Hi'jh voltage *Vc ; — + 3 0 V Guarantee ' Avalanche-proof
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2SK2029-01L,
hJST
hjst 16
2SK2029-01L
A2370
m777
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K1945
Abstract: K1945-01 2SK1945-01 2SK1945-01L T151
Text: 2 S K 1 9 4 5 - 1 L , FUJI POW ER M OS-FET S N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES I Features Outline Drawings •Hi jh speed switching >Low on-resistance >No secondary breakdown >Low driving power »High voltage 'V c;= ±30V Guarantee •Avalanche-proof
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2SK1945-01L.
E9Tg30ft3-Â
K1945
K1945-01
2SK1945-01
2SK1945-01L
T151
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dash 2b-5
Abstract: microdot
Text: ÉJlSK 1 t HID DWG SIZE L DATA CONTAINED JH THIS DOCUMENT IB PnOPflieTAflY TO TROMPETER B-ECTRONICfl INC. DCPreas WRITTEN PERMISSION. J DASH NO -7 -B -9 -10 -11 -12 -13 -13A -14 -23 -24 -24A -25 -25A -25 -27 -29 -30 -32 -33 -42 -43 -45 -45 -47 -49 -54 -55
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TRC-50-2
TRC-75-2
TWC-70-2
TWC-124-2
RG-22
TRF-59
25Q-3BB4
9530A5117
T-43H
5021H5331
dash 2b-5
microdot
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Untitled
Abstract: No abstract text available
Text: 2SK2049 FUJI P O W E R M O S - F E T N-CHANNEL SILICON POWER MOS-FET F - III • Features S E R I E S ■ Outline Drawings • Hi jh current • Low on-resistance • Nc secondary breakdown • Low driving power • Hi 3h forward Transconductance ■ Applications
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2SK2049
20Kil)
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FIT4 diode
Abstract: mosfet LT 438 2SK2250-01 2SK2250-01L
Text: 2SK2250-01L, S FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES • Features Outline Drawings • Hi'jh speed switching • Low on-resistance 2.3*0 2 • Nc secondary breakdown 0.5*0.! ri • Low driving power \± à • Hi jh voltage • V g ; = ± 30V Guarantee
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2SK2250-01L.
Tc-25X)
FIT4 diode
mosfet LT 438
2SK2250-01
2SK2250-01L
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Untitled
Abstract: No abstract text available
Text: 2SK2250-01 L. S FU JI PO W ER M O S-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES • Features • Hi'jh speed switching • Low on-resistance • Nc secondary breakdown • Low driving power • Hi;jh voltage • V c ; = + 3 0 V Guarantee • Avalanche-proof
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2SK2250-01
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Untitled
Abstract: No abstract text available
Text: 4 3 RELEASED FOR PUBLICATION T H IS DRAWING I S UNPUBLISHED. C COPYRIGHT BY AMP INCORPORATED. 19 2 ,19 LOC ALL RIGHTS RESERVED. DIST CM revisio n 52 DESCRIPTION DATE DWN APVD 0 L 3 0 - 0 0 1 5 - 97 2 - 21-97 JH R5 LTR REV PER EC : MATES WI TH HOUSING 640520.
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0L30-0015-97
640B20.
1-1883SA
7-12-9G
23FEB95
21-FEB-97
18726/u
cm-L3-15-97
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FRS5
Abstract: ea58
Text: O K I Sem iconductor ADDENDUM A Memory Module AC Timing Waveforms VoL W Jh "H" or "L" Write Cycle Early Write RÄS ÜÄS Address ^ IH V|L - VlH - I WÏÏA "H" or V 413 ADDENDUM A O K I Semiconductoi Fast Page Mode Read Cycle Fast Page Mode Write Cycle (Early Write)
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P01-8
FRS5
ea58
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ECG1074
Abstract: No abstract text available
Text: PHILIPS E C G INC 17E bbSaTEâ □ 0 0 3 c]0 fc. 3 T -7 7 -0 5 -0 5 ECG1074 FM-AM IF, AM MIX. OSO. AND TUNING METER DRIVER semiconductors QUICK REFERENCE DATA Value Symbol Unit T I- 6 V 90 dB J_ U 80 dB * JH V FM 40 IF dB AM 45 (IF) dB Rmw?
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ECG1074
T-77-05-05
CQ1074
0003TD7
ECQ1074
0Q03TCH
ECG1074
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3R5S
Abstract: No abstract text available
Text: FUJI ;± m « i Fuji New Semiconductor Products 1800V/800A/1 ± * § S IG B T iy n .- A ' 1 M B I 8 0 0 P N MB - 1 8 0 IGBT Low loss • high speed switching IGBT Modules H 4^ JH Features * ¡ ¡¡REEv High voltage, high current • 7 ^ High speed sw itching
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800V/800A/1
3R5S
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Untitled
Abstract: No abstract text available
Text: CXI cx 3X" LD I o 35’ O LT l| J\0 HOUSING + -S+JH TERMINAL ECT-Z-Z 0.5 5 IX L X + O L (+ 0 + LE ) 0.5 P.C.BOARD PATTERN DIMENSION (REFERENCE) (MOUNTING AREA) —S Q© l k 3 O SY T a # SHAPE OF 3 0 C IR C U IT S OR LE S S 0.55 +13 NOTES: A I. ISfflTffi
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UL94V-0,
53T94
SD-54722-012
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FUJI IGBT
Abstract: No abstract text available
Text: FUJI J . - 7 Fuji New Semiconductor Products 12 0 0 V /5 A ± 14^ ^ JH • / J \ ^ K J ^ IG B T 1 M B 0 5 -1 2 0 , 1 M B 0 5 D -1 2 0 Features » i - - V K % < - J n v *r- V • •lil it t , RBSOA, SCSO A 4' iz) Small molded package • • Low power loss
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HC06
Abstract: NV100HC06 NV120HC06 NV200HC06 NV240HC06 NV270HC06 NV270HC06A
Text: - 336 e >I 7* ? NVr . k . jH C 0 6 - > ' ; - X - U * ? '- -t > 9 — 9 o : U L 94V -0 • : 1 ; £ C M 1 i m 1 2 V — ST— S; / | Z ifiL fz t £ < n $ & - % r £ DC 1 ff i H 'f — f fil , £ ft £ ig [V ] a íf r lG I U t S : [V ] ÍV ^ 00.6 5± 1 5 - 1
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ihc06->
8X20/is)
NV100HC06
NV120HC06
MV150HC06
NV200HC06
H-101
HC06
NV240HC06
NV270HC06
NV270HC06A
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING 7 IS C O P Y R IG H T U N P U B L IS H E D . RELEASED BY 19 2 3 AMP IN COR POR ATE D. FOR ALL PUBLICATION R IG H T S ,19 LOC D IS T CM R ES ER V ED . revisio n 52 DESCRIPTION DATE DWN APVD 0 L 3 0 -0 0 1 5-97 2- 21-97 JH R5 L TR REV PER EC
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0L30-0015-97
7-12-9G
23FEB95
21-FEB-97
18726/u
cm-L3-15-97
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Untitled
Abstract: No abstract text available
Text: 3 4 THIS DRAWING 0 IS C O P Y R IG H T U N P U B L IS H E D . RELEASED BY 19 AMP IN COR POR ATE D. FOR ALL PUBLICATION R IG H T S 2 ,19 LOC CM R ES ER V ED . D IS T revisio n 52 DESCRIPTION DATE DWN APVD 0 L 3 0 -0 0 1 5-97 2 - 21- 97 JH R5 L TR RE V PER
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0L30-0015-97
640B17.
7-12-9G
23FEB95
21-FEB-97
18726/u
cm-L3-15-97
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Untitled
Abstract: No abstract text available
Text: Series 1842 Molded Unshielded RF, LCR Coils SERIES 1842 PHENOLIC CORE .15 ±20% 4.0 475 .030 .22 ± 20% 4.0 375 .035 .33 ± 20% 4.0 315 .050 .47 ± 20% 4.0 290 .080 .56 ± 10% 4.0 250 .100 .68 ±10% 4.0 230 .120 .82 + 10% 4.0 210 .180 1.00 ± 10% 4.0 190 .250
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50-291
Abstract: 4030N ic 4030 rm 4030
Text: 10 CKT5 DIM A □IM B 02 4.83±0.20 ,190±.008 2.54 .100 03 7.37±0.20 ,290±.008 5.08 .200 04 9.91±0.20 .390±.008 7.62 .300 12.45±0.20 10.16 .490±.008 .400 14.99±0.23 12.70 .590±.009 .500 07 17.53 +0.23 ,690±.009 15.24 .600 08 20.07± 0.23 ,790±.009
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SD-4030-0002
50-291
4030N
ic 4030
rm 4030
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Untitled
Abstract: No abstract text available
Text: MODEL IM 5TRICA L! IND. m TOL. IM-1 IM-1 IM-1 IM-1 IM-1 IM-1 IM-1 IM-1 IM-1 .10 .12 .15 .18 .22 .27 .33 .39 .47 ±10% ±10% ± 10% ±1 0% ±1 0% ± 10% ±10% ± 10% ± 10% IM-1 .56 .68 .82 1.0 1.2 1.5 1.8 2.2 2.7 3.3 3.9 4.7 5.6 6.8 8.2 10.0 12.0 15.0 18.0
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1000nH
125-C
IM-10
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