HA7-5170-2
Abstract: HA-5170 AN540 HA2-5170-2 HA2-5170-5 HA7-5170-5
Text: HA-5170 S E M I C O N D U C T O R 8MHz, Precision, JFET Input Operational Amplifier November 1996 Features Description • Low Offset Voltage. . . . . . . . . . . . . . . . . . . . . . . . . 100µV The Harris HA-5170 is a precision, JFET input, operational
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HA-5170
HA-5170
1-800-4-HARRIS
HA7-5170-2
AN540
HA2-5170-2
HA2-5170-5
HA7-5170-5
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Untitled
Abstract: No abstract text available
Text: HA-5170 Semiconductor September 1998 8MHz, Precision, JFET Input Operational Amplifier File Number 2912.3 Features • Low Offset V o lta g e . 10O^V The Harris HA-5170 is a precision, JFET input, operational
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HA-5170
HA-5170
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RU 7511
Abstract: circuit diagram for je 182 g
Text: DG180-191 HARRIS !Z * c ° "r.;.0.,! High-Speed Driver With JFET Switch GENERAL DESCRIPTION FEATURES The OG1SO thru DG191 series of analog gates consist of 2 or 4 N-channel junction-type field-effect transistors JFET designed to function as electronic switches. Level-shifting
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DG180-191
DG182,
150ns,
10MHz
10-PIN
14-PIN
DG191
DPST-DG183/184/185
SPDT-DG186/187/188
DG186/187/188
RU 7511
circuit diagram for je 182 g
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Untitled
Abstract: No abstract text available
Text: HA-5170 ggHARRis U U SEMICONDUCTOR M ff MM M # Precision JFET Input Operational Amplifier March 1993 Features Description • • • • • • • • • • • • The Harris HA-5170 is a precision, JFET input, operational amplifier which features low noise, low offset voltage and low
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HA-5170
HA-5170
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dual spst JFET
Abstract: No abstract text available
Text: IH401A HARRIS S E M I C O N D U C T O R QUAD Varafet Analog Switch GENERAL DESCRIPTION FEATURES The IH401A is made up of 4 monolithically constructed combinations of a varactor type diode and an N-channel JFET. The JFET itself is very similar to the popular 2N4391,
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IH401A
2N4391,
IH6201
IH401A
dual spst JFET
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DG180-191
Abstract: No abstract text available
Text: DG180-191 fffl HARRIS S E M I C O N D U C T O R High-Speed Driver With JFET Switch GENERAL DESCRIPTION FEATURES The DG180 thru DG191 series of analog gates consist of 2 or 4 N-channel junction-type field-effect transistors JFET designed to function as electronic switches. Level-shifting
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DG180-191
DG182,
150ns
10MHz
DG180
DG191
DG186/187/188
DG189/190/191
DG189/190/191
DG180-191
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SBDIP dg181bp
Abstract: DG190 DG187 EM 182AA dg184bp DG182 dg181ap DG181BP DG187BP DG190BP
Text: DG181 thru DG1Q1 High-Speed Drivers with JFET Switch Description The DG181 thru DG191 series of analog gates consist of 2 or 4 N-channel junction-type field-effect transistors JFET designed to function as electronic switches. Level-shifting drivers enable low-level inputs (0.8V to 2V) to control the
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DG181
DG191
10MHz,
SBDIP dg181bp
DG190
DG187
EM 182AA
dg184bp
DG182
dg181ap
DG181BP
DG187BP
DG190BP
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Untitled
Abstract: No abstract text available
Text: DG181 thru DG191 High-Speed Drivers with JFET Switch D ece m b e r 1997 Features Description • Constant ON-Resistance for Signals to ±10V DG182, DG185, DG188, DG191 , to ±7.5V (All Devices) The DG181 thru DG191 series of analog gates consist of 2 or 4 N-channel junction-type field-effect transistors (JFET)
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DG181
DG191
DG182,
DG185,
DG188,
DG191)
DG191
1-800-4-HARRIS
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OG191
Abstract: No abstract text available
Text: 43E D HARRIS SEMICOND SECTOR 4302271 GOB.bbflS 1 Hi HAS £B H A R R I S V A / D G 1 8 0 -1 9 1 S E M I C O N D U C T O R High-Speed Driver With JFET Switch GENERAL DESCRIPTION FEATURES The DG180 thru DG191 series of analog gates consist of 2 or 4 N-channei junction-type field-effect transistors JFET
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DG182,
150ns,
10MHr
14-PIN
DG186/187/188
DG189/190/191
OG191
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Untitled
Abstract: No abstract text available
Text: W IH 401A H A R R IS S E M I C O N D U C T O R QUAD Varafet Analog Switch GENERAL DESCRIPTION FEATURES The IH401A is made up of 4 monolithically constructed combinations of a varactor type diode and an N-channel JFET. The JFET itself is very similar to the popular 2N4391,
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IH401A
2N4391,
IH6201
IH401A
IH620I
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IH401A
Abstract: max dual analog switch
Text: IH401A H A R R IS S E M I C O N D U C T O R QUAD Varafet Analog Switch GENERAL DESCRIPTION FEATURES The IH401A is made up of 4 monolithically constructed combinations of a varactor type diode and an N-channel JFET. The JFET itself is very similar to the popular 2N4391,
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IH401A
2N4391,
IH6201
IH401A
max dual analog switch
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G-184
Abstract: No abstract text available
Text: S E M I C O N D U C T O R High-Speed Driver With JFET Switch GENERAL DESCRIPTION FEATURES The D G 180 thru D G 191 series o f analog gates co nsist of 2 or 4 N -channel junction-type fie ld -e ffe ct transistors JFET designed to function as ele ctro n ic sw itches. Level-shifting
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150ns,
10-PIN
14-PIN
DG186/187/188
DG189/190/191
G-184
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HA7-5170
Abstract: No abstract text available
Text: HA-5170 £ HARRIS Precision JFET Input Operational Amplifier Features • • • • • • g T10 < ^ A pplications Low Off set V o lta g e .lOOpV Low Offset Voltage D r if t . 2p V /°C
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HA-5170
-550C
HA7-5170
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DG180
Abstract: DG181 DG182 DG183 DG184 DG185 DG186 DG187 DG188 DG191
Text: H A R R DG180-191 I S S E M I C O N D U C T O R High-Speed Driver With JFET Switch GENERAL DESCRIPTION FEATURES The D G 180 thru DG191 series o f analog gates co nsist of 2 or 4 N -channel jun ctio n -typ e fie ld -e ffe ct tra n sisto rs JFET designed to function as ele ctro n ic sw itches. Level-shifting
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DG180
DG191
10MHz,
DG186/187/188
SPDT-DG189/190/191
DG181
DG182
DG183
DG184
DG185
DG186
DG187
DG188
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HA75170-5
Abstract: 5170-5
Text: m HARRIS HA-5170 S E M I C O N D U C T O R Precision JFET Input Operational Amplifier March1993 Features • • Description Low Offset Voltage. 100hV Low Offset Voltage D r if t . 2|iV/°C
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HA-5170
HA-5170
HA75170-5
5170-5
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ha-5180
Abstract: HA2-5180 HA-5180-5 HA7-5180 ha5180 HA5180-5 HA25180 application note 555 electrometer 250FA
Text: H A -5180 !T! HARRIS Low Bias Current, Low Power JFET Input Operational Amplifier M a y 1990 Features A pplications • Ultra Low Bias C u rre n t. 250fA • Electrometer Amplifier Designs • Low Power Supply Current . 0.8mA
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250fA
HA-5180
250fA
43D5S71
T-90-20
HA2-5180
HA-5180-5
HA7-5180
ha5180
HA5180-5
HA25180
application note 555
electrometer
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Untitled
Abstract: No abstract text available
Text: 3 HA-5160, HA-5162 Wideband, JFET Input High Slew Rate, Uncompensated, Operational Amplifiers March1993 Description Features • Wide Gain Bandwidth Ay £ 1 0 .100MHz • High Slew Rate. 120V/|is
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HA-5160,
HA-5162
100MHz
280ns
500ns/Div.
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LF157H
Abstract: No abstract text available
Text: LF157 Operational Amplifiers/Buffers Q3 HARRIS LF157 Monolithic JFET Input Operational Amplifiers LF157, LF157A, LF357, LF357A Wide Band Decompensated Av m IN = 10 General Description These are among the first m onolithic J F E T input opera • Photocell amplifiers
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LF157
LF157
LF157,
LF157A,
LF357,
LF357A
LF157H
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jfet idss 10ma vp -4v
Abstract: 22-VPP IH401A
Text: IH401A QUAD Varafet Analog Switch Features Description • rDS ON (Ty P ) . 35i2 The IH401A is made up of 4 monolithically constructed combinations of varacitor type diode and a N-Channel JFET.
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IH401A
IH401A
2N4391,
IH6201
IH6201
jfet idss 10ma vp -4v
22-VPP
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HA5160-5
Abstract: 5162-5 HA5162-5 ha-5162
Text: 3 h a -5160, HA-5162 Wideband, JFET Input High Slew Rate, Uncompensated, Operational Amplifiers March1993 Features Description • Wide Gain Bandwidth Ay £ 1 0 .100MHz • High Slew Rate. 120V/|is
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h1993
HA-5162
100MHz
280ns
HA-5160
100pF)
500ns/Div.
HA5160-5
5162-5
HA5162-5
ha-5162
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IMX183
Abstract: HARRIS 5160 HARRIS 5162 Harris JFET OP AMP HA-5160
Text: HARRIS SEMICOND SECTOR ffltífH S S S HA-5160, HA-5162 blE D • 4302271 []G4b71? 014 « H A S Wideband, JFET Input High Slew Rate, Uncompensated, Operational Amplifiers Match 1993 Features Description • Wide Gain Bandwidth Ay 2 1 0 . 100MHz
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HA-5160,
HA-5162
HA-5160
HA-516CV5162
100pF)
-100Q)
500ns/Dlv.
500ns/Div.
IMX183
HARRIS 5160
HARRIS 5162
Harris JFET OP AMP
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eta pa
Abstract: No abstract text available
Text: IT! HARRIS H A -5170 Precision JFET Input Operational Amplifier May 1990 Features A pplications • • • • • • • • • • • Low Offset V o lta g e . 100pV Low Offset Voltage D r i f t . 2|jV /°C
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100pV
eta pa
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A6160
Abstract: 060A00 HA2-5160
Text: IS SEtllCOND SECTOR IDE D | 43D5271 DOiaatB *5 | 53 HARRIS H A - 5 1 6 0 /6 2 Wideband, JFET Input High Slew Rate, Uncompensated, Operational Amplifier Applications Features • • • • • • W ide Gain Bandwidth A V > 1 0 . 100MHz
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43D5271
100MHz
280ns
A6160
060A00
HA2-5160
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HA170
Abstract: js35
Text: HARRIS SEMICOND SECTOR 10E D I 4305571 001227a b | HA-5170 gj HARRIS Precision JFET Input Operational Amplifier Features Applications • • • • • • • • • • • Low Offset Voltage. 100 iV Low Offset Voltage D r ift. 2(iV/°C
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001227a
HA-5170
HA170
js35
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