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    JEDEC PACKAGE MO-220 VGGD-1 QFN Search Results

    JEDEC PACKAGE MO-220 VGGD-1 QFN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    JEDEC PACKAGE MO-220 VGGD-1 QFN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CHA4107-QDG RoHS COMPLIANT C-band Medium Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA4107-QDG is a monolithic two-stage GaAs medium power amplifier designed for C-band applications. The MPA provides typically 25.5 dBm output


    Original     		PDF CHA4107-QDG CHA4107-QDG A4107 120mA 24L-QFN4x4 DSCHA4107-QDG1152

    Untitled

    Abstract: No abstract text available
    Text: CHA4107-QDG RoHS COMPLIANT C-band Medium Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA4107-QDG is a monolithic two-stage GaAs medium power amplifier designed for C-band applications. The MPA provides typically 25.5 dBm output


    Original     		PDF CHA4107-QDG CHA4107-QDG A4107 A3688A A3667A 120mA 24L-QFN4x4 DSCHA4107-QDG1152

    Untitled

    Abstract: No abstract text available
    Text: CHA3688aQDG RoHS COMPLIANT 12.5-30GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3688aQDG is a three-stage self-biased wide band monolithic low noise amplifier monolithic circuit. The circuit is manufactured with a pHEMT


    Original     		PDF CHA3688aQDG 5-30GHz CHA3688aQDG A3688A 5-30GHz 26dBm 115mA 24L-QFN4x4 DSCHA3688aQDG1035

    C8051F330

    Abstract: CIP-51 QFN-20 QFN-24
    Text: C8051F336/7/8/9 Mixed-Signal Byte-Programmable EPROM MCU Analog Peripherals - 10-Bit ADC ‘F336/8 only - Up to 200 ksps Up to 20 external single-ended or differential inputs VREF from on-chip VREF, external pin or VDD Internal or external start of conversion source


    Original     		PDF C8051F336/7/8/9 10-Bit F336/8 C8051F330 CIP-51 QFN-20 QFN-24

    Untitled

    Abstract: No abstract text available
    Text: C8051F336/7/8/9 Mixed-Signal Byte-Programmable EPROM MCU Analog Peripherals - 10-Bit ADC ‘F336/8 only - Up to 200 ksps Up to 20 external single-ended or differential inputs VREF from on-chip VREF, external pin or VDD Internal or external start of conversion source


    Original     		PDF C8051F336/7/8/9 10-Bit F336/8 512-byte C8051F330 16-bit

    c8051f800

    Abstract: ph sensor interface with 8051 C8051F805 C8051F808-GM f829 F832 CIP-51 QFN-20 QSOP-24 SOIC-16
    Text: C8051F80x-83x Mixed Signal ISP Flash MCU Family Capacitance to Digital Converter - Supports buttons, sliders, wheels, and capacitive High-Speed 8051 µC Core - Pipelined instruction architecture; executes 70% of proximity sensing instructions in 1 or 2 system clocks


    Original     		PDF C8051F80x-83x 16-bit 10-Bit c8051f800 ph sensor interface with 8051 C8051F805 C8051F808-GM f829 F832 CIP-51 QFN-20 QSOP-24 SOIC-16

    P119D

    Abstract: C8051F800 CIP-51 QFN-20 QSOP-24 SOIC-16 C8051F805 16 pin diagram of RS 232 C8051F801
    Text: C8051F80x-83x Mixed Signal ISP Flash MCU Family Capacitance to Digital Converter - Supports buttons, sliders, wheels, and capacitive High-Speed 8051 µC Core - Pipelined instruction architecture; executes 70% of proximity sensing instructions in 1 or 2 system clocks


    Original     		PDF C8051F80x-83x 16-bit 10-Bit P119D C8051F800 CIP-51 QFN-20 QSOP-24 SOIC-16 C8051F805 16 pin diagram of RS 232 C8051F801

    ecf 83

    Abstract: No abstract text available
    Text: C8051F80x-83x Mixed Signal ISP Flash MCU Family Capacitance to Digital Converter - Supports buttons, sliders, wheels, and capacitive High-Speed 8051 µC Core - Pipelined instruction architecture; executes 70% of proximity sensing instructions in 1 or 2 system clocks


    Original     		PDF C8051F80x-83x 16-bit 10-Bit ecf 83

    transistor F370

    Abstract: C8051F390-A-GM
    Text: C8051F39x/37x 50 MIPS 16 kB Flash, 512B EEPROM Mixed-Signal MCU Analog Peripherals ‘F390/2/4/6/8 and ‘F370/4 - 10-Bit ADC • Programmable throughput up to 500 ksps • Up to 16 external inputs, programmable as single- • - Two 10-Bit Current Output DACs


    Original     		PDF C8051F39x/37x F390/2/4/6/8 F370/4) 10-Bit transistor F370 C8051F390-A-GM

    C8051F392

    Abstract: C8051F370-A-GM f3704 C8051F33x
    Text: C8051F39x/37x 50 MIPS 16 kB Flash, 512B EEPROM Mixed-Signal MCU Analog Peripherals ‘F390/2/4/6/8 and ‘F370/4 - 10-Bit ADC • Programmable throughput up to 500 ksps • Up to 16 external inputs, programmable as single- • - Two 10-Bit Current Output DACs


    Original     		PDF C8051F39x/37x F390/2/4/6/8 F370/4) 10-Bit C8051F392 C8051F370-A-GM f3704 C8051F33x