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    JEDEC MO-153 AD Search Results

    JEDEC MO-153 AD Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TMP139AIYAHR Texas Instruments JEDEC DDR5 temperature sensor with 0.5 °C accuracy 6-DSBGA -40 to 125 Visit Texas Instruments Buy
    SN74SSQEA32882ZALR Texas Instruments JEDEC SSTE32882 Compliant 28-Bit to 56-Bit Registered Buffer with Address-Parity Test 176-NFBGA 0 to 85 Visit Texas Instruments Buy
    SN74SSQE32882ZALR Texas Instruments JEDEC SSTE32882 Compliant 28-Bit to 56-Bit Registered Buffer with Address-Parity Test 176-NFBGA 0 to 85 Visit Texas Instruments
    SN74SSQEB32882ZALR Texas Instruments JEDEC SSTE32882 Compliant 28-Bit to 56-Bit Registered Buffer with Address-Parity Test 176-NFBGA 0 to 85 Visit Texas Instruments Buy
    SN74SSQEC32882ZALR Texas Instruments JEDEC SSTE32882 Compliant Low Power 28-Bit to 56-Bit Registered Buffer with Address-Parity Test 176-NFBGA 0 to 85 Visit Texas Instruments Buy
    CAB4AZNRR Texas Instruments DDR4RCD01 JEDEC compliant DDR4 Register for RDIMM and LRDIMM operation up to DDR4-2400 253-NFBGA 0 to 0 Visit Texas Instruments Buy

    JEDEC MO-153 AD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    JEDEC MO-153

    Abstract: MO-153-BD-1 MO-153BD-1
    Text: Plastic Packages for Integrated Circuits Thin Shrink Small Outline Plastic Packages TSSOP M38.173 N INDEX AREA E 0.25(0.010) M E1 2 INCHES GAUGE PLANE -B1 38 LEAD THIN SHRINK SMALL OUTLINE PLASTIC PACKAGE (COMPLIANT TO JEDEC MO-153-BD-1 ISSUE F) B M SYMBOL


    Original     		PDF MO-153-BD-1 JEDEC MO-153 MO-153BD-1

    Q65110A7464

    Abstract: LTW5SN NACH top mark smd 2U
    Text: Platinum DRAGON Lead Pb Free Product - RoHS Compliant LD W5SN, LB W5SN, LT W5SN Vorläufige Daten für OS-PCN-2009-034-A / Preliminary Data for OS-PCN-2009-034-A Besondere Merkmale Features • Gehäusetyp: weißes SMD-Gehäuse, farbloser klarer Silikon - Verguss


    Original     		PDF OS-PCN-2009-034-A OS-PCN-2009-034-A Q65110A7464 LTW5SN NACH top mark smd 2U

    LBW5SM

    Abstract: LTW5SM
    Text: Golden DRAGON Lead Pb Free Product - RoHS Compliant LD W5SM, LB W5SM, LT W5SM Released Besondere Merkmale Features • Gehäusetyp: weißes SMD-Gehäuse, farbloser klarer Silikon - Verguss • Typischer Lichtfluss: 412 mW (tief blau); 25 lm (blau); 81 lm (true grün) bei 350 mA und bis


    Original     		PDF

    W5SM-JYKY

    Abstract: LBW5SM LTW5SM
    Text: Golden DRAGON Lead Pb Free Product - RoHS Compliant LD W5SM, LB W5SM, LT W5SM Released Besondere Merkmale Features • Gehäusetyp: weißes SMD-Gehäuse, farbloser klarer Silikon - Verguss • Typischer Lichtfluss: 412 mW (tief blau); 25 lm (blau); 81 lm (true grün) bei 350 mA und bis


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Platinum DRAGON Lead Pb Free Product - RoHS Compliant LD W5SN, LB W5SN, LT W5SN Released Besondere Merkmale Features • Gehäusetyp: weißes SMD-Gehäuse, farbloser klarer Silikon - Verguss • Typischer Lichtfluss: 692 mW (tief blau); 45 lm (blau); 126 lm (true grün) bei 700 mA bis zu


    Original     		PDF D-93055

    LD W5SN-1U2V-35

    Abstract: Q65110A7901 bare die
    Text: Platinum DRAGON Lead Pb Free Product - RoHS Compliant LD W5SN, LB W5SN, LT W5SN Released Besondere Merkmale Features • Gehäusetyp: weißes SMD-Gehäuse, farbloser klarer Silikon - Verguss • Typischer Lichtfluss: 692 mW (tief blau); 45 lm (blau); 126 lm (true grün) bei 700 mA und


    Original     		PDF D-93055 LD W5SN-1U2V-35 Q65110A7901 bare die

    ltw5sm

    Abstract: LD W5SM W5SM-JYKY-25
    Text: Golden DRAGON Lead Pb Free Product - RoHS Compliant LD W5SM, LB W5SM, LT W5SM Vorläufige Daten für OS-PCN-2009-033-A/ Preliminary Data for OS-PCN-2009-033-A Besondere Merkmale Features • Gehäusetyp: weißes SMD-Gehäuse, farbloser klarer Silikon - Verguss


    Original     		PDF OS-PCN-2009-033-A/ OS-PCN-2009-033-A ltw5sm LD W5SM W5SM-JYKY-25

    LTW5SN

    Abstract: smd 2U 73 diode Q65110A9211
    Text: Platinum DRAGON Lead Pb Free Product - RoHS Compliant LD W5SN, LB W5SN, LT W5SN Released Besondere Merkmale Features • Gehäusetyp: weißes SMD-Gehäuse, farbloser klarer Silikon - Verguss • Typischer Lichtfluss: 692 mW (tief blau); 45 lm (blau); 126 lm (true grün) bei 700 mA und


    Original     		PDF

    LTW5SM

    Abstract: W5SM-JYKY White LED silicone OSRAM Q65110A8417
    Text: Golden DRAGON Lead Pb Free Product - RoHS Compliant LD W5SM, LB W5SM, LT W5SM Released Besondere Merkmale Features • Gehäusetyp: weißes SMD-Gehäuse, farbloser klarer Silikon - Verguss • Typischer Lichtfluss: 412 mW (tief blau); 25 lm (blau); 81 lm (true grün) bei 350 mA und bis


    Original     		PDF D-93055 LTW5SM W5SM-JYKY White LED silicone OSRAM Q65110A8417

    LTW5SM

    Abstract: No abstract text available
    Text: Golden DRAGON Lead Pb Free Product - RoHS Compliant LD W5SM, LB W5SM, LT W5SM Vorläufige Daten für OS-PCN-2009-033-A/ Preliminary Data for OS-PCN-2009-033-A Besondere Merkmale Features • Gehäusetyp: weißes SMD-Gehäuse, farbloser klarer Silikon - Verguss


    Original     		PDF OS-PCN-2009-033-A/ OS-PCN-2009-033-A LTW5SM

    Untitled

    Abstract: No abstract text available
    Text: February 1984 Revised February 1999 S E M I C O N D U C T O R TM MM74HCT00 Quad 2 Input NAND Gate General Description The M M 74H C T00 is a NAND gates fabricated using advanced silicon-gate C M OS technology w hich provides the inherent benefits of C M OS— low quiescent power and


    OCR Scan     		PDF MM74HCT00

    74LS

    Abstract: M14A M14D MM74HCT00 MM74HCT00M MM74HCT00MTC MM74HCT00SJ MTC14 md-153 bcs 47
    Text: Revised February 1999 E M IC O N D U C T G R T M MM74HCT00 Quad 2 Input NAND Gate General Description T he M M 74H C T00 is a NAND gates fabricated using advanced silicon-gate C M OS technology which provides the inherent benefits of C M OS— low quiescent pow er and


    OCR Scan     		PDF MM74HCT00 MM74HCT00 MM74HCT 74LS M14A M14D MM74HCT00M MM74HCT00MTC MM74HCT00SJ MTC14 md-153 bcs 47

    Untitled

    Abstract: No abstract text available
    Text: A S E M I R I C C O N H D U I L D C T O Revised February 1999 R TM MM74HC04 Hex Inverter are protected from dam age due to static discharge by inter­ nal diode clam ps to V qq and ground. General Description The M M 74H C 04 inverters utilize advanced silicon-gate


    OCR Scan     		PDF MM74HC04

    MM74HC*4050m

    Abstract: 0-15V 74HC CD4049BC CD4050BC M16A MM74HC4049 MM74HC4049M MM74HC4050
    Text: Revised O ctober 1999 SEMICONDUCTOR TM MM74HC4049 • MM74HC4050 Hex Inverting Logic Level Down Converter Hex Logic Level Down Converter General Description The M M 74H C 4049 and the M M 74H C 4050 utilize advanced silicon-gate C M O S technology, and have a m od­


    OCR Scan     		PDF MM74HC4049 MM74HC4050 MM74HC4049 MM74HC4050 MM74HC*4050m 0-15V 74HC CD4049BC CD4050BC M16A MM74HC4049M

    Untitled

    Abstract: No abstract text available
    Text: S eptem ber 1983 Revised February 1999 E M IC O N D U C T G R T M MM74HC14 Hex Inverting Schmitt Trigger General Description Features The M M 74H C 14 utilizes advanced silicon-gate C M OS technology to achieve the low pow er dissipation and high noise im m unity of standard C M O S, as well as the capability


    OCR Scan     		PDF MM74HC14 MM74HC14

    MM74HC14M

    Abstract: MM74HC14 74HC 74LS M14A M14D MM74HC14MTC MM74HC14SJ MTC14
    Text: S e p te m b e r 19 8 3 R e v is e d F e b ru a ry 1999 E M IC O N D U C T G R T M MM74HC14 Hex Inverting Schmitt Trigger General Description Features T he M M 74H C 14 utilizes advanced silicon-gate C M OS technology to achieve the low pow er dissipation and high


    OCR Scan     		PDF MM74HC14 MM74HC14 MM74HC14M 74HC 74LS M14A M14D MM74HC14MTC MM74HC14SJ MTC14

    74HCT05

    Abstract: No abstract text available
    Text: Revised February 1999 S E M IC O N D U C T O R TM General Description The MM74HCT05 is a logic function fabricated by using advanced silicon-gate CMOS technology, which provides the inherent benefits of CMOS— low quiescent power and wide power supply range. The device is also input and out­


    OCR Scan     		PDF MM74HCT05 MM74HCT05 DM74LS MM74HCT 74HCT05

    Untitled

    Abstract: No abstract text available
    Text: Revised April 1999 E M I C Q N D U C T G R tm General Description Features The MM74HCT14 utilizes advanced silicon-gate CMOS technology to achieve the low power dissipation and high noise immunity of standard CMOS, as well as the capability to drive 10 LS-TTL loads.


    OCR Scan     		PDF MM74HCT14 MM74HCT14 74HCT

    MM74HCT74

    Abstract: 74HCT 74LS M14A M14D M74HCT74MTC MM74HCT74M MM74HCT74SJ
    Text: Revised January 1999 E M IC O N D U C T G R T M MM74HCT74 Dual D-Type Flip-Flop with Preset and Clear General Description tected from dam age due to static discharge by internal diode clam ps to Vc c and ground. T he M M 74H C T74 utilizes advanced silicon-gate C M OS


    OCR Scan     		PDF MM74HCT74 MM74HCT74 74HCT 74LS M14A M14D M74HCT74MTC MM74HCT74M MM74HCT74SJ

    MM74HC08

    Abstract: 74HC 74LS HC08 M14A M14D MM74HC08M MM74HC08MTC MM74HC08SJ diagram LG TV circuits
    Text: S eptem ber 1983 Revised February 1999 EMICONDUCTGRTM MM74HC08 Quad 2-Input AND Gate General Description All inputs are protected from dam age due to static dis­ charge by internal diode clam ps to V qq and ground. T he M M 74H C 08 AND gates utilize advanced silicon-gate


    OCR Scan     		PDF MM74HC08 MM74HC08 74HC 74LS HC08 M14A M14D MM74HC08M MM74HC08MTC MM74HC08SJ diagram LG TV circuits

    burp

    Abstract: 74HCT00
    Text: Revised February 1999 EMICQNDUCTGR tm MM74HCT00 Quad 2 Input NAND Gate General Description The MM74HCT00 is a NAND gates fabricated using advanced silicon-gate CMOS technology which provides the inherent benefits of CMOS— low quiescent power and wide power supply range. This device is input and output


    OCR Scan     		PDF MM74HCT00 MM74HCT burp 74HCT00

    74HCT

    Abstract: M20D MM74HCT273 MM74HCT273MTC MS-013 MTC20
    Text: Revised February 1999 E M IC O N D U C T G R T M MM74HCT273 Octal D-Type Flip-Flop with Clear General Description All inputs to this device are protected from dam age due to electrostatic discharge by diodes to Vc c and ground. T he M M 74H C T273 utilizes advanced silicon-gate C M OS


    OCR Scan     		PDF MM74HCT273 MM74HCT273 MM74HCT 74HCT M20D MM74HCT273MTC MS-013 MTC20

    MM74HC04M

    Abstract: 74HC 74LS M14A M14D MM74HC04 MM74HC04MTC MM74HC04SJ MTC14
    Text: s e m ic o n d u c t o r Revised February 1999 MM74HC04 Hex Inverter General Description are protected from dam age due to static discharge by inter­ nal diode clam ps to V qq and ground. T he M M 74H C 04 inverters utilize advanced silicon-gate C M O S technology to achieve operating speeds sim ilar to


    OCR Scan     		PDF MM74HC04 MM74HC04M 74HC 74LS M14A M14D MM74HC04MTC MM74HC04SJ MTC14

    74HCT74N

    Abstract: No abstract text available
    Text: Revised January 1999 EMICQNDUCTGR tm MM74HCT74 Dual D-Type Flip-Flop with Preset and Clear General Description tected from dam age due to static discharge by internal diode clam ps to Vc c and ground. The M M 74H C T74 utilizes advanced silicon-gate CM OS


    OCR Scan     		PDF MM74HCT74 74HCT74N