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    JECF 1 I-DE SIC PHOTODIODE Search Results

    JECF 1 I-DE SIC PHOTODIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TRS10E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 10 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TRS6E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 6 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    JECF 1 I-DE SIC PHOTODIODE Datasheets Context Search

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    Abstract: JECF 1 I-DE SiC Photodiode uv photodiode wavelength 250 to 260
    Text: JECF 1 I-DE SiC Photodiode CHARACTERISTICS Spectral response according to erythema CIE 87 Active area 1 mm2 TO-5 package sensor isolated to package Integrated diffuser, cos-response characteristic APPLICATIONS Measurement of erythema effective UV – part of sun- or UV-lamp


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