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    JE 800 TRANSISTOR Search Results

    JE 800 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    JE 800 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    npn 222

    Abstract: 251bf "AGC Amplifier" AM "AGC Amplifier" AM FM radio AM/FM bf 233 BF222 agc amplifier F VHF amplifier
    Text: CONSUMER TRANSISTORS continued o Q. > i> 0 CL Li] CD >~ < O ÜJ ÜJ JE > > U. o _c s> 0) > X o L» CM II I- rsi X ¡2 ro 1- P A CKAG E cc < NF (dB) h PG (dB) > DESCRIPTIO N TYPE RF amplifiers-mixer/oscillators 3 _E □ o_ 800 200 600 TO-72 6.5 800 175 550 TO-72


    OCR Scan     		00U1CJ1CJ10 O-7211) npn 222 251bf "AGC Amplifier" AM "AGC Amplifier" AM FM radio AM/FM bf 233 BF222 agc amplifier F VHF amplifier PDF

    702 y TRANSISTOR

    Abstract: JE701 JE700 702 P TRANSISTOR je 701
    Text: r n r e n i maiml MJE700/701 /702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 lc= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS • C om plem ent to M JE 800/801/802/803 ABSOLUTE MAXIMUM RATINGS C haracteristic


    OCR Scan     		MJE700/701 MJE700/701 MJE702/703 702 y TRANSISTOR JE701 JE700 702 P TRANSISTOR je 701 PDF

    2N2772

    Abstract: TO82 2N2232 2N3475 2n2227 2n3471 2n2228 2n1016 2N2226 2N1050C
    Text: discrete devices JEmitronicr hot line TO LL FREE NUMBER 800-777-3960 silicon transistors silicon power transistors HIGH S.O.A. NPN POWER TRANSISTORS 6 - 2 0 Amperes JE D E C /T Y P E 151 153 152 154 2N1015, A, B, C, D 2N1016, A, B, C, D 2N3429-32 163 164 PEAK CURRENT


    OCR Scan     		2N1015, 2N1015 2N1015A 2N1016, 2N1016 2N1016A 2N3429 2N3429-32 MT-52 MT-33 2N2772 TO82 2N2232 2N3475 2n2227 2n3471 2n2228 2N2226 2N1050C PDF

    BUF600

    Abstract: No abstract text available
    Text: JR W -B R O W N BUF600/601 Or, Call Customer Servite al 1-800-548-6132 USA Only BUF600/601 OPERATIONAL AMPLIFIERS Q ADVANCE INFORMATION SU B JE C T TO CHANGE HIGH-SPEED BUFFER AMPLIFIER FEATURES APPLICATIONS • OUTSTANDING AC-PERFORMANCE • VIDEO BUFFER/LINE DRIVER


    OCR Scan     		BUF600/601 360QV/ BUF600 PDF

    Untitled

    Abstract: No abstract text available
    Text: Or, Call Customer Service at 1-800-548-6132 USA Only i ADVANCED INFORMATION S U B JE C T TO CH ANCE FEATU R ES Q Wideband Voltage Feedback OPERATIONAL AMPLIFIER APPLICATIONS • GAIN-BANDWIDTH: 1.6GHz • COMMUNICATIONS • S T A B L E IN GAINS > 2 • MEDICAL IMAGING


    OCR Scan     		40V/J1S -76dBc 10MHz OPA641 OPA64- 402ft OPA641 17313bS 002471b PDF

    2SA988

    Abstract: 2sa988 transistor A0222-6 1T0266 2SA9881 NEC 41-A 002 PA33 T108 T210 T540
    Text: i s I Silicon Transistor # W-MM # f i : mm) it ffijfftigils, Ì É ì S l t x 4 v & 'y 'T , 50 mA i x-60# K 7 ï r f f l O L x \tm x $ t t o s b îœ , to mmmmvtifê.x'to ss hFE *>-?, 120 v V,CEO : - hFE (Ic = - 1.0 mA) : 500 T Y P . (Ta = 25 °C )


    OCR Scan     		2SA988 SC-43B S24-S| 2SA988 2sa988 transistor A0222-6 1T0266 2SA9881 NEC 41-A 002 PA33 T108 T210 T540 PDF

    BA 5982

    Abstract: 143r 0709s nec d 882 p transistor transistor NEC D 882 p 7m 0880 IC NEC NE85635 ceramic micro-X package 015e1
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST 35 MICRO-X


    OCR Scan     		NE856 av3000 NE85639R-T1 BA 5982 143r 0709s nec d 882 p transistor transistor NEC D 882 p 7m 0880 IC NEC NE85635 ceramic micro-X package 015e1 PDF

    AC128 transistor

    Abstract: bc649 BC646 AC188 ac187 BCS48 bc660 AC188 transistor transistor AC128 AC188 AC187
    Text: Transistors germanium low/medium power transistors Dwg. ref. O utline •b z -0 ?î book 1 parts 1 and 2 V CBO V V ceo (V) M axim um Ratings lCM IC(AV) (A ) (A) Ptot at 25PC (°C> <mW) Tj m in. at •c fT ty p . (m A i (MHz) 2.5 h FE max. Special Features


    OCR Scan     		at25PC AC128 AC187 AC188 2N1303 2N1306 2N1307 2N1309 h--22-> crt6-25 AC128 transistor bc649 BC646 AC188 ac187 BCS48 bc660 AC188 transistor transistor AC128 AC188 PDF

    Untitled

    Abstract: No abstract text available
    Text: an A M P com pany Bipolar High fT Low Voltage NPN Silicon Transistors MA4T3243 Series V3.00 Case Styles Features • Designed for 3-5 Volt Operation • Useable to 6 GHz in Oscillators • Useable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz


    OCR Scan     		MA4T3243 MA4T324335 PDF

    200D-100

    Abstract: 200D100 IEBo-400mA two transistors power transistor bjt 1000 a 1000v Transistor bjt fuji bjt vebo10v
    Text: _ _ - _ 2-Pack BJT 2DI200D-100 '» A * I Outline Draw ings POWER TRANSISTOR MODULE : F e a tu re s • High Voltage t 7 ' J “ 7h>f U > *f ¥ 4 KrtJSt Including Free Wheeling Diode • ASO Excellent Safe Operating Area • Insulated Type I A p p licatio n s


    OCR Scan     		200D-100 E82988 C-200A 200D-100 200D100 IEBo-400mA two transistors power transistor bjt 1000 a 1000v Transistor bjt fuji bjt vebo10v PDF

    BCX33

    Abstract: BCX32 BCX31 BCX34 BFQ36 2N1711 Data Sheet BC337 BC338 BFX84 BFX85
    Text: Transistors N-P-N silicon low/medium power transistors book 1 parts 1 and 2 cont. Type No. V c □ O o> ^ Ï o M axim um Ratings Icm I cjavi vceo V ceo (V) (V ) (A) (A) hpE Ptot m in. max. at 25°C <°C) (mW) 50 45 1.0 0.5 150 625 100 30 25 150 730 Ti fT


    OCR Scan     		BC337 BC338 BCX31 OT-25 BCX32 BCX33 BCX34 BFX84 BFX85 h--22-> BCX33 BCX32 BCX34 BFQ36 2N1711 Data Sheet BC338 BFX85 PDF

    nf016

    Abstract: MA4TF50 gs 069 0605
    Text: an A M P com pany General Purpose 0.5 |jm N-Type GaAs MESFET Transistors MA4TF50 Series V3.00 Case Styles Features • • • • • Low Noise Figure High Associated Gain High Maximum Available Gain Designed for Battery Operation Useful to Ku-Band Description


    OCR Scan     		MA4TF50 MA4TF5005, MA4TF5000, MA4TF5000 MA4TF5005 nf016 gs 069 0605 PDF

    ST 80500 transistor

    Abstract: ST 80500 LB 11911 ST 9727 74200 MARKING AG1 NE687 ka 2201 323 IK 9094 cd 9094
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE687 SERIES FEATURES_ • LOW NOISE: 1.3 dB AT 2.0 GHz 4 fr • LOW VOLTAGE OPERATION • EASY TO MATCH • HIGH GAIN BANDWIDTH PRODUCT: fT of 13 GHz 18 SO T 343 ST Y LE 19(3 PIN ULTRA S U P E R


    OCR Scan     		NE687 OT-143) NE68718-T1 NE68719-T1 NE68730-T1 NE68733-T1 NE68739-T1 ST 80500 transistor ST 80500 LB 11911 ST 9727 74200 MARKING AG1 ka 2201 323 IK 9094 cd 9094 PDF

    JE800

    Abstract: JE702 mje800 JE700
    Text: f Z 7 SCS-THOMSON ^ 7 # fifflD æ m iC T «! S_G MJ E800/1 /2/3 MJE700/1/2/3 S-TH O M S O N 3GE ]> MEDIUM POWER DARLINGTONS D ESCRIPTIO N The MJE800, MJE801, MJE802 and MJE803 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are moun­


    OCR Scan     		E800/1 MJE700/1/2/3 MJE800, MJE801, MJE802 MJE803 O-126 MJE700, MJE701, MJE702 JE800 JE702 mje800 JE700 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by MJE18206/D SEMICONDUCTOR TECHNICAL DATA M JE 18206 M JF18206 D esigner’s Data Sheet SWITCHMODE™ NPN Bipolar Power Transistor for Electronic Light B allast and Sw itching Power Supply Applications POWER TRANSISTORS


    OCR Scan     		MJE18206/D JF18206 MJE/MJF18206 221D-02 E69369 PDF

    Pa75ha

    Abstract: upa75 UPA75HA UPA75H 3773 P T108 T460 5551 transistor jsw15
    Text: NEC j í í t / V T jK ÎM 'ê r h =7 > > * 9 C om poun d Transistor J ¿¿PA75HA PN Px ¥ 9 'J n PNP Silicon Epitaxial C om pound T ransistor D ifferential A m p lifie r 4$ di:/F E A T U R E S O 1 c h i p t f i t T ' i , ^ tztb, l ' ' 7 > X l : { , | | L


    OCR Scan     		uPA75HA Pa75ha upa75 UPA75H 3773 P T108 T460 5551 transistor jsw15 PDF

    t636

    Abstract: 557 sot143 T636 A S 223 858 015 636
    Text: an A M P com pany Low Operating Voltage, High FT Bipoiar Microwave Transistors MA4T6365 V2.00 Case Styles Features • • • • • Designed for Battery Operation fT to 10 GHz Low Voltage Oscillator and Amplifier Low Phase Noise and Noise Figure Hermetic and Surface Mount Packages and


    OCR Scan     		MA4T6365 MA4T6365 OT-143 MA4T636539 t636 557 sot143 T636 A S 223 858 015 636 PDF

    transistor bc557

    Abstract: transistor BC558 base collector emitter BC546 BC548 BC556 BC557 BC558 DS21
    Text: BC556 - BC558 VISHAY PNP EPITAXIAL PLANAR TRANSISTORS LITEMZI y POWER SEMICONDUCTOR Features Ideal for Switching and AF Amplifier Applications Divided into Current Gain subgroups Complementary NPN Types Available BC546 thru BC548 TO-92 Dim Min Max A 4.45


    OCR Scan     		BC556 BC558 BC546 BC548) MIL-STD-202, BC557 BC558 transistor bc557 transistor BC558 base collector emitter BC548 DS21 PDF

    uPA77HA

    Abstract: upa77 Power amplifier transisitor ST460 Power Transisitor 100V 2A 251U EBMS FST460
    Text: NEC A. l i T / \ m .'g - h Com pound Transisitor ' i 7 ¿¿PA77HA PNP h = 7 > i> 7 ,5 U f c Jl& jg S & Jif liffl PNP Silicon Epitaxial Compound Transistor Differential Amplifier ^ 0 / P A C K A G E D IM ENSIONS Unit: mm ^ / F E A T U R E S 01 chip nm.'chhtztb, ^ r i 4 ( j v b e = 2 mv t y p . ) ^ c ,


    OCR Scan     		uPA77HA K0958 K0985 upa77 Power amplifier transisitor ST460 Power Transisitor 100V 2A 251U EBMS FST460 PDF

    MJE520

    Abstract: bd189 sc 6038 MJE12007 MOTOROLA 527 33A mj4647 mje13006 BD 433NPNTO-126 Je105 mps-u
    Text: MOTORCLA SC XSTRS/R F 12E D | t3t?5SM aüâ4m ? T | T -9 1 -0 1 Selection By Package Motorola power transistors are available in a wide variety of metal and plastic packages to match thermal, electrical and cost requirements. The following table com pares the basic


    OCR Scan     		-204AA -204AE T0-204A 97A-02 O-205AD BUS51 BUV21 BUV11 2N6249 BUX41 MJE520 bd189 sc 6038 MJE12007 MOTOROLA 527 33A mj4647 mje13006 BD 433NPNTO-126 Je105 mps-u PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Description SGA-5286 Stanford Microdevices’ SGA-5286 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with Ft up to 65 GHz.


    OCR Scan     		SGA-5286 SGA-5286 50-ohm DC-4000 EDS-100610 PDF

    transistor vergleichsliste

    Abstract: Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR vergleichsliste transistor BC-148 rft transistoren Transistoren DDR
    Text: TRANSISTOR VERGLEICHSLISTE Teil 2: Siliziumtransistoren r a d io - t e le v is io n Transistorverglèich& liste T eil 2 : S iliziu in tra n sistoren TRA N SISTO R, V ER G LEICH S LIS T E Teil 2: Siliziumtransistoren DER D EU TSCH EN M IL IT Ä R V E R L A G


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Description SGA-5486 Stanford Microdevices’ SGA-5486 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with Ft up to 65 GHz.


    OCR Scan     		SGA-5486 SGA-5486 50-ohm DC-2400 EDS-100612 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Description SGA-6389 Stanford Microdevices’ SGA-6389 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with Ft up to 65 GHz.


    OCR Scan     		SGA-6389 SGA-6389 50-ohm DC-3000 EDS-100620 PDF