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Toshiba America Electronic Components JDV2S10FS(TPL3) DIODE VARICAP VCO 10V FSC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	JDV2S10FS(TPL3)	Digi-Reel	398		1	1 $0.43 10 $0.265 100 $0.43 1000 $0.43 10000 $0.43	Buy Now
	JDV2S10FS(TPL3)	Cut Tape	398		1	1 $0.43 10 $0.265 100 $0.43 1000 $0.43 10000 $0.43	Buy Now
	JDV2S10FS(TPL3)	Reel			10,000	1 - 10 - 100 - 1000 - 10000 $0.07745	Buy Now
Bristol Electronics	JDV2S10FS(TPL3)		9,180			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	JDV2S10FS(TPL3)		7,344			1 $0.557 10 $0.557 100 $0.557 1000 $0.557 10000 $0.0975	Buy Now
Toshiba America Electronic Components JDV2S09FSTPL3 DIODE VARICAP VCO 10V FSC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	JDV2S09FSTPL3	Cut Tape			1	1 $0.42 10 $0.42 100 $0.42 1000 $0.42 10000 $0.42	Buy Now
	JDV2S09FSTPL3	Digi-Reel			1	1 $0.42 10 $0.42 100 $0.42 1000 $0.42 10000 $0.42	Buy Now
	JDV2S09FSTPL3	Reel			10,000	1 - 10 - 100 - 1000 - 10000 $0.07745	Buy Now
Toshiba America Electronic Components JDV2S07FSTPL3 DIODE VARICAP VCO 10V FSC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	JDV2S07FSTPL3	Cut Tape			1	1 $0.4 10 $0.4 100 $0.4 1000 $0.4 10000 $0.4	Buy Now
	JDV2S07FSTPL3	Reel			10,000	1 - 10 - 100 - 1000 - 10000 $0.07344	Buy Now
	JDV2S07FSTPL3	Digi-Reel			1	1 $0.4 10 $0.4 100 $0.4 1000 $0.4 10000 $0.4	Buy Now
Toshiba America Electronic Components JDV2S41FS(TPL3) DIODE VAR 15V UHF FSC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	JDV2S41FS(TPL3)	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	JDV2S41FS(TPL3)		3,727			1 $0.88 10 $0.77 100 $0.533 1000 $0.379 10000 $0.293	Buy Now
Toshiba America Electronic Components JDV2S41AFS(TPL3) - Tape and Reel (Alt: JDV2S41AFS(TPL3))
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	JDV2S41AFS(TPL3)	Reel			10,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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JDV2S Datasheets (70)

Part	Manufacturer	Description	Datasheet Type	PDF
JDV2S01E	Toshiba		Original	PDF
JDV2S01E-07	Toshiba	Silicon Epitaxial Planar Type VCO for UHF band	Original	PDF
JDV2S01ETH3T	Toshiba	JDV2S01ETH3T - Diode VAR Cap Single 10V 2.85pF 2-Pin ESC T/R	Original	PDF
JDV2S01ETPH3	Toshiba	DIODE VAR CAP SINGLE 10V 1.35PF 2(1-1G1A)	Original	PDF
JDV2S01ETPH3F	Toshiba	JDV2S01ETPH3F - Diode VAR Cap Single 10V 2.85pF 2-Pin ESC T/R	Original	PDF
JDV2S01FS	Toshiba	DIODE VAR CAP SINGLE 10V 1.35PF 2(1-1L1A)	Original	PDF
JDV2S01S	Toshiba		Original	PDF
JDV2S02E	Toshiba		Original	PDF
JDV2S02ETH3FT	Toshiba	JDV2S02ETH3FT - Diode VAR Cap Single 10V 1.8pF 2-Pin ESC T/R	Original	PDF
JDV2S02ETPH3	Toshiba	DIODE VAR CAP SINGLE 10V 0.83PF 2(1-1G1A)	Original	PDF
JDV2S02E(TPH3,F)	Toshiba	JDV2S02E - Diode VAR Cap Single 10V 1.8pF 2-Pin ESC T/R	Original	PDF
JDV2S02FS	Toshiba	VCO for the UHF band	Original	PDF
JDV2S02S	Toshiba		Original	PDF
JDV2S05E	Toshiba		Original	PDF

JDV2S05E(TH3,F,T)	Toshiba	JDV2S05E - Diode VAR Cap Single 10V 3.85pF 2-Pin ESC T/R	Original	PDF
JDV2S05ETPH3	Toshiba	DIODE VAR CAP SINGLE 10V 1.94PF 2(1-1G1A)	Original	PDF
JDV2S05FS	Toshiba	DIODE VAR CAP SINGLE 10V 1.94PF 2(1-1L1A)	Original	PDF
JDV2S05S	Toshiba		Original	PDF
JDV2S05S	Toshiba	Variable Capacitance Diodes; Surface Mount Type: Y; Package: sESC; Number of Pins: 2; Application Scope: VHF/UHF VCO	Original	PDF
JDV2S06FS	Toshiba	DIODE VAR CAP SINGLE 10V 15PF 2(1-1L1A)	Original	PDF

JDV2S Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: JDV2S36E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S36E TCXO/VCO Unit: mm • High capacitance ratio: C1V / C6V = 7.5 typ. • Low series resistance: rs = 0.4 Ω (typ.) • Useful for small size tuner. Absolute Maximum Ratings (Ta = 25°C) Characteristics	Original	JDV2S36E	PDF
JDV2S05S Abstract: No abstract text available Text: 20010205 JDV2S05S SPICE PARAMETER SPICE MODEL: BERKLEY SPICE2G6 DIODE MODEL DATA FORMAT: MODEL FORMAT SPICE SYMBOL: IS A ,RS(Ω) ,N(-) ,CJ0(F) ,VJ(V) ,M(-) ,BV(V) ,IBV(A) ,XTI(-) FREQUENCY RANGE: f = 0.1 GHz～3 GHz REVERSE VOLTAGE RANGE: VR = 1V ～ 4 V	Original	JDV2S05S 187E-16 00E-04 750E-12 00E-10	PDF
JDV2S13S Abstract: No abstract text available Text: 20010205 JDV2S13S SPICE PARAMETER SPICE MODEL: BERKLEY SPICE2G6 DIODE MODEL DATA FORMAT: MODEL FORMAT SPICE SYMBOL: IS A ,RS(Ω) ,N(-) ,CJ0(F) ,VJ(V) ,M(-) ,BV(V) ,IBV(A) ,XTI(-) FREQUENCY RANGE: f = 0.1 GHz～3 GHz REVERSE VOLTAGE RANGE: VR = 0.5V ～ 4 V	Original	JDV2S13S 2E-16 00E-04 1E-11 00E-10	PDF
JDV2S40FS Abstract: C10V Text: JDV2S40FS TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type JDV2S40FS VCO for UHF Band Radio Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Reverse voltage VR 15 V Junction temperature Tj 150 °C Tstg −55 to 150	Original	JDV2S40FS JDV2S40FS C10V	PDF
JDV2S38SC Abstract: No abstract text available Text: JDV2S38SC TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type JDV2S38SC VCO for UHF Band Radio Low Series Resistance : rs = 0.48 Ω typ. • A two-terminal ultra-small package supports high-density mounting and the downsizing of end products	Original	JDV2S38SC JDV2S38SC	PDF
JDV2S05E Abstract: No abstract text available Text: 20010126 JDV2S05E SPICE PARAMETER SPICE MODEL: BERKLEY SPICE2G6 DIODE MODEL DATA FORMAT: MODEL FORMAT SPICE SYMBOL: IS A ,RS(Ω) ,N(-) ,CJ0(F) ,VJ(V) ,M(-) ,BV(V) ,IBV(A) ,XTI(-) FREQUENCY RANGE: f = 0.1 GHz～3 GHz REVERSE VOLTAGE RANGE: VR = 1V ～ 4 V	Original	JDV2S05E 187E-16 00E-04 750E-12 00E-10	PDF
Untitled Abstract: No abstract text available Text: 20010205 JDV2S03S SPICE PARAMETER SPICE MODEL: BERKLEY SPICE2G6 DIODE MODEL DATA FORMAT: MODEL FORMAT SPICE SYMBOL: IS A ,RS(Ω) ,N(-) ,CJ0(F) ,VJ(V) ,M(-) ,BV(V) ,IBV(A) FREQUENCY RANGE: f = 0.1 GHz～3 GHz REVERSE VOLTAGE RANGE: VR = 1V ～ 4V Ta = 27℃	Original	JDV2S03S 352E-15 00E-04 0E-11 00E-10	PDF
JDV2S36E Abstract: No abstract text available Text: JDV2S36E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S36E TCXO/VCO Unit: mm • High capacitance ratio: C1V / C6V = 7.5 typ. • Low series resistance: rs = 0.4 Ω (typ.) • Useful for small size tuner. Absolute Maximum Ratings (Ta = 25°C) Characteristics	Original	JDV2S36E JDV2S36E	PDF
marking FB Abstract: JDV2S02E Text: JDV2S02E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S02E VCO for UHF band • Small Package • High Capacitance Ratio : C1V/C4V = 2.0 typ. • Low Series Resistance : rs = 0.60 Ω (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit	Original	JDV2S02E 000707EAA1 marking FB JDV2S02E	PDF
JDV2S05E Abstract: No abstract text available Text: JDV2S05E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S05E VCO for UHF band • Small Package • High Capacitance Ratio : C1V/C4V = 1.9 typ. • Low Series Resistance : rs = 0.30 Ω (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit	Original	JDV2S05E 000707EAA1 JDV2S05E	PDF
JDV2S09S Abstract: No abstract text available Text: JDV2S09S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S09S VCO for UHF band Unit in mm • High capacitance ratio: C1V/C4V = 2.1 typ. • Low series resistance: rs = 0.33 Ω (typ.) • This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C)	Original	JDV2S09S 000707EAA2 JDV2S09S	PDF
JDV2S02S Abstract: No abstract text available Text: JDV2S02S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S02S VCO for UHF band Unit in mm • High capacitance ratio: C1V/C4V = 2.0 typ. • Low series resistance: rs = 0.6 Ω (typ.) • This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C)	Original	JDV2S02S 000707EAA2 JDV2S02S	PDF
JDV2S17S Abstract: No abstract text available Text: JDV2S17S TOSHIBA DIODE Silicon Epitaxial Planar Type JDV2S17S VCO for UHF Band Radio • Unit: mm High Capacitance Ratio : C1V/C4V = 2.1 typ. • Low Series Resistance : rs = 0.6 Ω (typ.) • This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C)	Original	JDV2S17S JDV2S17S	PDF
JDV2S06S Abstract: No abstract text available Text: JDV2S06S TOSHIBA DIODE Silicon Epitaxial Planar Type JDV2S06S VCO for UHF Band Radio • High Capacitance Ratio : C1V/C4V = 2.0 typ. • Low Series Resistance : rs = 0.27 Ω (typ.) • This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C)	Original	JDV2S06S 000707EAA2 JDV2S06S	PDF

JDV2S14E Abstract: No abstract text available Text: JDV2S14E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S14E Useful for VCO/TCXO • Small Package • High Capacitance Ratio : C1V/C2.5V = 2.15 typ. • Low Series Resistance : rs = 0.4 Ω (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating	Original	JDV2S14E 000707EAA1 JDV2S14E	PDF
JDV2S31SC Abstract: No abstract text available Text: JDV2S31SC TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S31SC VCO for UHF Band Radio Low series resistance : rs = 0.23 Ω typ. • A two-terminal ultra-small package supports high-density mounting and the downsizing of end products. Lead (Pb)-free. 0.62±0.03	Original	JDV2S31SC 470MHz JDV2S31SC	PDF
JDV2S01FS Abstract: No abstract text available Text: JDV2S01FS TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S01FS VCO for the UHF band Unit: mm • High capacitance ratio: C1V/C4V = 2.0 typ. • Low series resistance: rs = 0.5 Ω (typ.) • This device is suitable for use in a small-size tuner. 0.6±0.05	Original	JDV2S01FS JDV2S01FS	PDF
JDV2S19S Abstract: No abstract text available Text: JDV2S19S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S19S VCO for the UHF band Unit: mm • High capacitance ratio: C1V/C4V = 1.8 typ. • Low series resistance: rs = 0.35 Ω (typ.) • This device is suitable for use in a small-size tuner. Absolute Maximum Ratings (Ta = 25°C)	Original	JDV2S19S JDV2S19S	PDF
C25V Abstract: JDV2S71E Text: JDV2S71E 東芝ダイオードシリコンエピタキシャルプレーナ形 JDV2S71E ○ UHF SHF 電子同調用単位: mm • 容量変化比が大きい。 : C1V/C25V = 11.5 標準 • 直列抵抗が小さい。 • C-V カーブの直線性が良くトラッキングエラーが少ない。	Original	JDV2S71E C1V/C25V 470MHz C25V JDV2S71E	PDF
Untitled Abstract: No abstract text available Text: JDV2S06S TOSHIBA DIODE Silicon Epitaxial Planar Type JDV2S06S VCO for UHF Band Radio • High Capacitance Ratio : C1V/C4V = 2.0 typ. • Low Series Resistance : rs = 0.27 Ω (typ.) • This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C)	Original	JDV2S06S 000707EAA2	PDF
Untitled Abstract: No abstract text available Text: JDV2S28SC TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S28SC VCO for UHF Band Radio Unit: mm High Capacitance Ratio : C1V/C3V = 2.17 typ. • A two-terminal ultra-small package supports high-density mounting and the downsizing of end products. • Lead (Pb)-free.	Original	JDV2S28SC 470MHz	PDF
JDV2S16FS Abstract: No abstract text available Text: JDV2S16FS TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S16FS VCO for the UHF band Unit: mm • High capacitance ratio: C1V/C4V = 2.0 typ. • Low series resistance: rs = 0.55 Ω (typ.) • This device is suitable for use in a small-size tuner. 0.6±0.05	Original	JDV2S16FS JDV2S16FS	PDF
JDV2S10FS Abstract: No abstract text available Text: JDV2S10FS TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S10FS VCO for the UHF band Unit: mm This device is suitable for use in a small-size tuner. Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Reverse voltage VR 10 V Junction temperature	Original	JDV2S10FS JDV2S10FS	PDF
JDV2S25FS Abstract: No abstract text available Text: JDV2S25FS TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S25FS VCO for UHF Band Radio Unit: mm High capacitance ratio: C1V/C4V = 2.9 typ. • Low series resistance: rs = 0.49 Ω (typ.) • This device is suitable for use in small tuners. 0.6±0.05 0.1	Original	JDV2S25FS JDV2S25FS	PDF

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Toshiba America Electronic Components JDV2S10FS(TPL3)

Toshiba America Electronic Components JDV2S09FSTPL3

Toshiba America Electronic Components JDV2S07FSTPL3

Toshiba America Electronic Components JDV2S41FS(TPL3)

Toshiba America Electronic Components JDV2S41AFS(TPL3)

JDV2S Datasheets (70)

JDV2S Datasheets Context Search

Untitled

JDV2S05S

JDV2S13S

JDV2S40FS

JDV2S38SC

JDV2S05E

Untitled

JDV2S36E

marking FB

JDV2S05E

JDV2S09S

JDV2S02S

JDV2S17S

JDV2S06S

JDV2S14E

JDV2S31SC

JDV2S01FS

JDV2S19S

C25V

Untitled

Untitled

JDV2S16FS

JDV2S10FS

JDV2S25FS