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    JDSU MICRO AMPLIFIER Search Results

    JDSU MICRO AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HMFYAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HPFYADFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP128-1420-0.50-001 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation

    JDSU MICRO AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VOA MEMS

    Abstract: MAT-0TDO210 MEMS optical tunable filters 1575nm JDSU MATT
    Text: AGILE OPTICAL COMPONENTS MEMS Variable Optical Attenuators MATT Series Key Features • Low polarization dependence • Insensitive to vibration and electrostatic discharge ESD • Extremely low wavelength dependence over C and/or L bands • Mulitiple devices easily packaged into common housing


    Original     		PDF 498-JDSU 5378-JDSU VOA MEMS MAT-0TDO210 MEMS optical tunable filters 1575nm JDSU MATT

    JDSU ERM

    Abstract: avalanche photodiode free space JDSU avalanche photodiode ingaas ghz avalanche photodiode jdsu 10 gb APD receiver avalanche photodiode ingaas ghz 070AW avalanche photodiode receiver apd 1550, sensitivity 30 dBm InGaAs APD photodiode 1550
    Text: COMMUNICATIONS COMPONENTS 10 Gb/s Avalanche Photodiode APD Micro Receiver ERM 578 LMx Key Features • Sensitivity of -27.3 dBm • TIA gain of 5.5 kΩ (differential) • Very small form factor MSA coplanar package • Low cost • Available with FC, LC or SC connectors


    Original     		PDF ERM578LMX 498-JDSU 5378-JDSU JDSU ERM avalanche photodiode free space JDSU avalanche photodiode ingaas ghz avalanche photodiode jdsu 10 gb APD receiver avalanche photodiode ingaas ghz 070AW avalanche photodiode receiver apd 1550, sensitivity 30 dBm InGaAs APD photodiode 1550

    VOA MEMS

    Abstract: JDSU MATT MAT-0TDO210 MEMS VOA MEMS optical tunable filters MEMS variable optical 1575nm
    Text: AGILE OPTICAL COMPONENTS MEMS Variable Optical Attenuators MATT Series Key Features • Low polarization dependence • Insensitive to vibration and electrostatic discharge ESD • Extremely low wavelength dependence over C and/or L bands • Mulitiple devices easily packaged into common housing


    Original     		PDF Compl-800-498-JDSU 800-5378-JDSU MAT-0TDO210 498-JDSU 5378-JDSU SMF-28 VOA MEMS JDSU MATT MAT-0TDO210 MEMS VOA MEMS optical tunable filters MEMS variable optical 1575nm

    40GBASELR4

    Abstract: JQP-04LWBA2
    Text: optical Communications QSFP+ 40 G LR4 Optical Transceiver — 1310 nm CWDM for up to 10 km Reach JQP Series Key Features • Integrated CWDM TOSA/ROSA • Duplex LC optical receptacle • Operating case temperature range from −5˚C to 70˚C • Low power consumption < 3.5 W max


    Original     		PDF 38-pin SFF-8436 40GBASE-LR4, 498-JDSU 5378-JDSU JQP-04L 40GBASELR4 JQP-04LWBA2