marking JC
Abstract: BAV23S marking sot23 marking JB sot23 jb SOT23 MARKING JC BAV23S JB SOT23 E2- marking marking JB sot23
Text: SEMICONDUCTOR BAV23S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking JC 1 No. 0 1 2. Marking 2 Item Marking Description Device Mark JC BAV23S - - - * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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BAV23S
OT-23
marking JC
BAV23S marking
sot23 marking JB
sot23 jb
SOT23 MARKING JC
BAV23S
JB SOT23
E2- marking
marking JB sot23
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EK42
Abstract: d338aa
Text: ru{{p s6p xtprqsqt 0z+v5 1.x*z2 x}v0vx2z0~12~x1 >aW^Zbh hZadZfVhifZ < MVhZY jc`hV\Z < MVhZY XiffZbh < Ebgi`Vh^cb jc`hV\Z +H^b0, < /62 hc 92 522Q>? 34>DdZf dc`ZE 7222Q>? KfchZXh^cb YZ\fZZ @EI62272 < EK42 NcX_Zh aVhZf^V` < K>88-CB Q2 +PG, ?cbhVXhg gdf^b\ aVhZf^V` <
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7222Q>
EI62272
88-CB
LNb807/203
A475592
208Ia
DB337B
FLS/337B,
3709aa
DB363BD
EK42
d338aa
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transistor s55
Abstract: EK42
Text: sv|q t7q yvqsrtru 1{,w6 2/y+{3 y~w1wy3{1*23*y2 >aW^Zbh hZadZfVhifZ < /62 MVhZY jc`hV\Z< 472Q>? hc 92 MVhZY XiffZbh < Ebgi`Vh^cb jc`hV\Z +H^b0, < 32> +dZf dc`Z, 7222Q>? KfchZXh^cb YZ\fZZ @EI62272 < EK42 NcX_Zh aVhZf^V` < K>88-CB Q2 +PG, ?cbhVXhg gdf^b\ aVhZf^V` <
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7222Q>
EI62272
88-CB
LNb807/203
208Ia
DB337B
FLS/337B,
3709aa
DB363BD
4208aa
transistor s55
EK42
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KRA723E
Abstract: No abstract text available
Text: SEMICONDUCTOR KRA723E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking JC 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark JC KRA723E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
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KRA723E
KRA723E
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marking JC
Abstract: KRA723U
Text: SEMICONDUCTOR KRA723U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking JC 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark JC KRA723U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
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KRA723U
marking JC
KRA723U
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7358
Abstract: EK42
Text: vy*t w:t |wtvuwux 4~/z9 52|.~6 |,z4z|6~4-56-|5 >aW^Zbh hZadZfVhifZ < /62 MVhZY jc`hV\Z < 522Q>? hc 92 MVhZY XiffZbh < 34>pdZf dc`Zq Ebgi`Vh^cb jc`hV\Z +H^b0, < 7222Q>? KfchZXh^cb YZ\fZZ @EI62272 < EK42 NcX_Zh aVhZf^V` < B^`Z Ic0<A475592 K>88-CB Q2 +PG, ?cbhVXhg gdf^b\ aVhZf^V` <
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7222Q>
EI62272
88-CB
LNb807/203
208Ia
A475592
DB337B
FLS/337B,
3709aa
DB363BD
7358
EK42
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GK 223
Abstract: No abstract text available
Text: 31}*z~ y 31}*z+ >490: .87<:8550: 1D@OPMDN v Nc`]X VUgY XYg][b. ghUV`Y ghfiWhifY v NifZUWY acibh]b[ hYW\bc`c[m. UXjUbWYX WfUZhkcf_ v @igh dfchYWhYX <RLFB@H ,LLHFB@OFKJN R]dYf Wcbhfc` <?90 OmdY Icfa]bU` jc`hU[Y JdYfUh]b[ jc`hU[Y fUb[Y Icfa]bU` achcf `cUX DB5726 134D
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DB5726
DB5726=
DB5729
GK 223
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Y7G3
Abstract: ne 555E 1a10aa Z441 z523 d6876 mjop d266c kD 242
Text: 2M 9 9 6 2$ 2/ /#/ j44 56789:6;68<=4874klm j44 nbB]ogapme j44 >JC:<=4G8<=oB8B=C5@7Q j44 dbHbbbHbbb48G=7@5J8C>4<J?=45JB= j44 qr`s4>=@<JC: j44 5=BG=7@597=47@C:=t <8F45=BGt4;abocddnue 6J:645=BGt4;abocd`bue ! "#$%!&'$ $!) *
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47klm
4J65BG
6K6777t
Y7G3
ne 555E
1a10aa
Z441
z523
d6876
mjop
d266c
kD 242
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75222
Abstract: 2603 TMS2603 LSI 2603
Text: T M S 2603 JC. TM S 2603 NC EBCDIC-TO-USASCII CODE CONVERTER > Z c > 30 < 9 >1 description The T M S 2603 JC/NC is a programmed TM S 2600 JC/NC ROM capable of converting 8-bit EBCDIC to standard U SASCII. Electrical and mechanical characteristics, interfacing, and timing are identical to those of the TM S 2600
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TMS2600
Abstract: TMS2600JC texas
Text: MOS LSI T M S 2604 JC. T M S 2604 NC USASCII-TO-EBCDIC/SELECTRIC-TO-EBCDIC CODE CONVERTER description The T M S 2604 JC/NC is a programmed T M S 2600 JC/NC ROM capable of converting both U SA SCII and Selectric Line Code to EBCDIC. Electrical and mechanical characteristics, interfacing, and timing are identical to those of the
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7S222
TMS2600
TMS2600JC
texas
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8096 MICROCONTROLLER ADDRESSING MODES
Abstract: 270646 intel Automotive
Text: in le l 809X JC/839X JC/879X JC ADVANCED 16-BIT MICROCONTROLLER WITH 8- OR 16-BIT EXTERNAL BUS Automotive —40°C to + 125°C Case Dedicated Baud Rate Generator 232 Bytes of On-Chip Register RAM High Speed I/O Subsystem 128 Byte External RAM On-Chip Full Duplex Serial Port
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809XJC/839XJC/879XJC
16-BIT
10-Bit
52-Pin
68-Pin
8096 MICROCONTROLLER ADDRESSING MODES
270646
intel Automotive
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TMS2600
Abstract: TMS2603 7S222
Text: TM S 2 60 3 JC. TM S 2 6 0 3 NC EBCDIC-TO-USASCII CODE CONVERTER JAN UARY, 1971 description The TMS 2603 JC /N C is a programmed TMS 2600 JC/NC ROM capable o f converting 8-b it EBCDIC to standard U S A S C II. E lectrical and mechanical characteristics, interfacing, and tim in g are identical to those o f the TIMS 2600
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7S222
USASC11
TMS2600
TMS2603
7S222
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Untitled
Abstract: No abstract text available
Text: MOS LSI T M S 2604 JC. T M S 2604 NC USASCII-TO-EBCDIC/SELECTRIC-TO-EBCDIC CODE CONVERTER > z c > 3 < description The T M S 2604 JC/NC is a programmed T M S 2600 JC/NC R O M capable of converting both U S A S C II and Selectric Line Code to EB C D IC . Electrical and mechanical characteristics, interfacing, and timing are identical to those of the
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Untitled
Abstract: No abstract text available
Text: MOS LSI T M S 2603 JC. T M S 2603 NC EBCDIC-TO-USASCII CODE CONVERTER > z c > 3> -< description The T M S 2603 JC /N C is a programmed T M S 2600 JC /N C R O M capable of converting 8-bit E B C D IC to standard U S A S C II. Electrical and mechanical characteristics, interfacing, and timing are identical to those of the T M S 2600
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Untitled
Abstract: No abstract text available
Text: Super Fast Recovery Diode Diode Module mtm OUTLINE D 1 2 0 LC 40 400V 120A Feature •* a a u m • High lo Rating • trr=100ns • trr= 100ns • 0 jc ö V J '£ l/' • Small ö jc Main Use • Sem iconductor Process M achine • High power source • FA
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100ns
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S60SC6MT
Abstract: W116 diode marking aj
Text: Schottky Barrier Diode Twin Diode S60SC6MT • f tt g H O UTLINE Package ' MTO-3PT U n it ; m m W e ig h t 5.2 k T y p 60V 60A Feature • Tj=150lC Tj=150°C • 6 Small 0 jc High lo Rating jc ö V J \ £ li 'S 60SC6MT ~ N-H- Polarity ÎR T 7 ) Main Use
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S60SC6MT
S60SC6MT
J533-1
W116
diode marking aj
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S20LC30
Abstract: No abstract text available
Text: Super Fast Recovery Diode Twin Diode M im S20LC30 O U T L IN E Unit ! mm Package : M TO -3P W eight 6.1g T yp 300V 20A : Feature •g y -rx • trr=30ns • 9 jc ö V J \£ U • Low Noise • trr=30ns • Small 8 jc • ® fl • Switching Regulator • Home Appliance, Office Automation
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S20LC30
S20LC30
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Untitled
Abstract: No abstract text available
Text: TMS 340 9 JC. NC; TMS 3417 JC, NC QUADRUPLE 80-, 64-BIT DYNAMIC SHIFT REGISTERS B U LLE T IN NO . D L-3 7B 123M R E V IS E D NOVEMBER 1977 is • 10 -k H i to B'MHz Operation % Dynamic Configuration • Singla TTL-Com patibla Clock • In p u u and Output» Fu lly TTL-Compatibla
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64-BIT
16-PIN
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Untitled
Abstract: No abstract text available
Text: Darlington Transistors Darlington Power Transistors Three Terminal Type "i ectrica Characteristics V be ft ton VcE 6 jc Absolute Maximum Ratings Type No. 2SB1282 2SB1283 2SB1284 2SD1793 2SD1026 2SD1789 2SD1023 2SD1792 2SD1025 2SD1794 2SD1027 2SD2196 2SD1795
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O-220
2SB1282
2SB12
ITO-220
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Untitled
Abstract: No abstract text available
Text: High Voltage-High Speed Switching Transistors HFX series TO-220 ITO-220 Bipolar transistors NPN Electrical Characteristics Absolute Maximum Ratings VcEO Type No. VcBO VCEO V ebo lc Ib Pt Tstg Tj (sus) (min) [V] [V] [V] [A] [A] [W ] PC] [°C] [V] V be 6 jc
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ITO-220
O-220
ITO-220
2SC4230
Fig82-3
FTO-220
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LG VARIABLE FREQUENCY DRIVE is3
Abstract: ADZ8
Text: 80960JS/JC 3.3 V Microprocessor Advance Information Datasheet Product Features ga Pin/Code Compatible with all 80960Jx Processors a High-Performance Embedded Architecture — One Instruction/Clock Execution — Core Clock Rate is: 80960JS Ix the Bus Clock
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80960JS/JC
80960Jx
80960JS
80960JC
32-Bit
80980JS/JC
LG VARIABLE FREQUENCY DRIVE is3
ADZ8
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Untitled
Abstract: No abstract text available
Text: 80960JS/JC 3.3 V Microprocessor Advance Information Datasheet Product Features • Pin/Code Compatible with all 80960Jx Processors ■ High-Performance Embedded Architecture — One Instruction/Clock Execution — Core Clock Rate is: 80960JS lx the Bus Clock
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80960JS/JC
80960Jx
80960JS
80960JC
32-Bit
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Transistor mps 2112
Abstract: MPS 2112 UZU2122 nais uzu2202 UZU2202 nais sensor UZU20205 druck EN50032-2 UZU2001
Text: Drucksensoren mit hoher Funktionalität und digitaler LED Anzeige I I K JC m W v l 143k IW EINE NEUE GENERATION MULTIFUNKTIONALER HOCHPRÄZISER MIKROPROZESSORGESTEUERTER DIGITALMANOMETER Hohe Wiederholgenauig keit und Auflösung bei kurzen Ansprechzeiten Kurze Ansprechzeit; unter 2,5ms
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UZU811
Transistor mps 2112
MPS 2112
UZU2122
nais uzu2202
UZU2202
nais sensor
UZU20205
druck
EN50032-2
UZU2001
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FTG 1087 S
Abstract: AST 3P, Transmitter
Text: 8XC152JA/JB/JC/JD UNIVERSAL COMMUNICATION CONTROLLER 8-BIT MICROCONTROLLER • 8K Factory Mask Programmable ROM Available ■ Superset of 80C51 Architecture ■ 64KB Data Memory Addressing ■ Multi-Protocol Serial Communication I/O Port 2.048 Mbps/2.4 Mbps Max
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8XC152JA/JB/JC/JD
80C51
80C152/
83C152
80C152JC,
83C152JC,
80C152JD
FTG 1087 S
AST 3P, Transmitter
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