Untitled
Abstract: No abstract text available
Text: MMBTH10W VHF/UHF Transistors COLLECTOR 3 3 P b Lead Pb -Free 1 1 BASE FEATURES: 2 2 EMITTER SOT-323(SC-70) * We declare that the material of product compliance with RoHS requirements. Maximum Ratings (TA=25°C Unlesso therwise noted) Rating Symbol Value Unit
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MMBTH10W
OT-323
SC-70)
10-Jun-2011
OT-323
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 COLLECTOR LMBTH10QWT1 1 BASE 3 2 EMITTER MAXIMUM RATINGS Rating 1 Symbol Value Unit Collector–Emitter Voltage V CEO 25 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage V EBO 3.0 Vdc 2 SC-70/SOT-323
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LMBTH10QWT1
SC-70/SOT-323
LMBTH10QWâ
SC-70
OT-323
LMBTH10QW-4/5
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sc70 marking 3Q
Abstract: MPS 425 5 pin sc70 marking 3Q LMBTH10QWT1
Text: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 COLLECTOR LMBTH10QWT1 1 BASE 3 2 EMITTER MAXIMUM RATINGS Rating 1 Symbol Value Unit Collector–Emitter Voltage V CEO 25 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage V EBO 3.0 Vdc 2 SC-70/SOT-323
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LMBTH10QWT1
SC-70/SOT-323
LMBTH10QW
SC-70
OT-323
LMBTH10QW-4/5
sc70 marking 3Q
MPS 425
5 pin sc70 marking 3Q
LMBTH10QWT1
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MPS 425
Abstract: LMBTH10WT1
Text: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 COLLECTOR LMBTH10WT1 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage V CEO 25 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage V EBO 3.0 Vdc SC-70/SOT–323
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LMBTH10WT1
SC-70/SOT
LMBTH10W
SC-70
OT-323
LMBTH10WT1-5/5
MPS 425
LMBTH10WT1
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JB marking transistor
Abstract: MPS 425 transistor marking jb "UHF Transistors" k mps marking JB diode y-parameter LMBTH10WT1 sc70 marking JB
Text: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 COLLECTOR Featrues LMBTH10WT1G 1 BASE 3 z We declare that the material of product 2 EMITTER compliance with RoHS requirements. 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage V CEO 25
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LMBTH10WT1G
SC-70/SOT
SC-70
OT-323
JB marking transistor
MPS 425
transistor marking jb
"UHF Transistors"
k mps
marking JB diode
y-parameter
LMBTH10WT1
sc70 marking JB
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors Featrues LMBTH10WT1G z We declare that the material of product compliance with RoHS requirements. 3 ORDERING INFORMATION Device Marking Shipping LMBTH10WT1G 3E 3000/Tape&Reel LMBTH10WT3G 3E 10000/Tape&Reel 1 2
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LMBTH10WT1G
3000/Tape
LMBTH10WT3G
10000/Tape
SC-70/SOTâ
195mm
150mm
3000PCS/Reel
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LMBTH10WT1G
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors Featrues LMBTH10WT1G S-LMBTH10WT1G z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and
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LMBTH10WT1G
S-LMBTH10WT1G
AEC-Q101
LMBTH10WT3G
S-LMBTH10WT3G
3000/Tape
10000/Tape
SC-70/SOTâ
LMBTH10WT1G
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LMBTH10WT1
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 COLLECTOR Featrues LMBTH10WT1G 1 BASE 3 z We declare that the material of product 2 EMITTER compliance with RoHS requirements. 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage V CEO 25
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LMBTH10WT1G
SC-70/SOT
195mm
150mm
3000PCS/Reel
8000PCS/Reel
OT-723
OD-723)
10Reel/Inner
LMBTH10WT1
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marking JB diode
Abstract: JB marking transistor JB SOT323 BAV99W BAV99W-T1 marking JB
Text: BAV99W WTE POWER SEMICONDUCTORS Pb SURFACE MOUNT FAST SWITCHING DIODE Features High Conductance L Fast Switching Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose and Switching Plastic Material – UL Recognition Flammability
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BAV99W
OT-323,
MIL-STD-202,
OT-323
marking JB diode
JB marking transistor
JB SOT323
BAV99W
BAV99W-T1
marking JB
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 COLLECTOR Featrues LMBTH10WT1G 1 BASE 3 z Pb-Free Package is Available. 2 EMITTER 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage V CEO 25 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage
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LMBTH10WT1G
SC-70/SOTâ
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 COLLECTOR LMBTH10QWT1G 1 BASE Featrues 3 z Pb-Free Package is Available. 2 EMITTER MAXIMUM RATINGS Rating 1 Symbol Value Unit Collector–Emitter Voltage V CEO 25 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage
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LMBTH10QWT1G
SC-70/SOT-323
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ia2410
Abstract: No abstract text available
Text: STEVAL-TDR011V1 2-stage RF power amplifier with LPF based on the PD85006L-E and STAP85050 RF power transistors Features • Excellent thermal stability ■ Frequency: 400 - 470 MHz ■ Supply voltage: 13.6 V ■ Output power: 50 W ■ Current: < 10 A ■ Input power: 20 dBm
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STEVAL-TDR011V1
PD85006L-E
STAP85050
STEVAL-TDR011V1
ia2410
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MA4P7436-1141T
Abstract: AS080447-33N IA2410 AS120252-9R3N PD85006L-E SOT323-5 C1P SOT23 GRM42-6 COG c6p SOT23 PD85035s-e
Text: STEVAL-TDR011V1 2-stage RF power amplifier with LPF based on the PD85006L-E and STAP85050 RF power transistors Data brief Features • Excellent thermal stability ■ Frequency: 400 - 470 MHz ■ Supply voltage: 13.6 V ■ Output power: 50 W ■ Current: < 10 A
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STEVAL-TDR011V1
PD85006L-E
STAP85050
STEVAL-TDR011V1
MA4P7436-1141T
AS080447-33N
IA2410
AS120252-9R3N
SOT323-5
C1P SOT23
GRM42-6 COG
c6p SOT23
PD85035s-e
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AS080447-33N
Abstract: l0422 IA2410 C22A c2f sot AS120252-9R3N IA4910 C2F SOT23 PD85006L-E PD85035S-E
Text: STEVAL-TDR011V1 2-stage RF power amplifier with LPF based on the PD85006L-E and STAP85050 RF power transistors Features • Excellent thermal stability ■ Frequency: 400 - 470 MHz ■ Supply voltage: 13.6 V ■ Output power: 50 W ■ Current: < 10 A ■ Input power: 20 dBm
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STEVAL-TDR011V1
PD85006L-E
STAP85050
STEVAL-TDR011V1
AS080447-33N
l0422
IA2410
C22A
c2f sot
AS120252-9R3N
IA4910
C2F SOT23
PD85035S-E
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Untitled
Abstract: No abstract text available
Text: BAV99W WTE POWER SEMICONDUCTORS Pb SURFACE MOUNT FAST SWITCHING DIODE Features High Conductance L Fast Switching Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose and Switching Plastic Material – UL Recognition Flammability
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BAV99W
OT-323,
MIL-STD-202,
OT-323
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Untitled
Abstract: No abstract text available
Text: BAV99W WTE POWER SEMICONDUCTORS Pb SURFACE MOUNT FAST SWITCHING DIODE Features High Conductance L Fast Switching Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose and Switching Plastic Material – UL Recognition Flammability
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BAV99W
OT-323
OT-323,
MIL-STD-202,
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Untitled
Abstract: No abstract text available
Text: BAV99W SURFACE MOUNT FAST SWITCHING DIODE WON-TOP ELECTRONICS Pb Features Dual Diode Series Fast Switching Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications Plastic Material – UL Recognition Flammability
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BAV99W
OT-323,
MIL-STD-202,
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wja75
Abstract: No abstract text available
Text: BAW56W,BAV70W,BAV99W,BAL99W SURFACE MOUNT SWITCHING DIODES VOLTAGE 100Volts POWER 200mWatts SOT-323 Unit: inch mm FEATURES .087(2.2) .070(1.8) • Electrically Identical to Standard JEDEC .054(1.35) .045(1.15) • High Conductance .087(2.2) .078(2.0) • Surface mount package Ideally Suited for Automatic insertion
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BAW56W
BAV70W
BAV99W
BAL99W
100Volts
200mWatts
OT-323
2002/95/EC
OT-323,
MIL-STD-750,
wja75
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Untitled
Abstract: No abstract text available
Text: BAW56W,BAV70W,BAV99W,BAL99W SURFACE MOUNT SWITCHING DIODES VOLTAGE 100Volts POWER SOT-323 200mWatts Unit：inch mm • Fast switching speed. • Surface mount package Ideally Suited for Automatic insertion 0.087(2.20) 0.070(1.80) • Electrically Identical to Standard JEDEC
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BAW56W
BAV70W
BAV99W
BAL99W
2002/95/EC
100Volts
200mWatts
OT-323
OT-323,
MIL-STD-750,
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Untitled
Abstract: No abstract text available
Text: BAW56W,BAV70W,BAV99W,BAL99W SURFACE MOUNT SWITCHING DIODES VOLTAGE 100Volts POWER SOT-323 200mWatts Unit：inch mm • Fast switching speed. • Surface mount package Ideally Suited for Automatic insertion 0.087(2.20) 0.070(1.80) • Electrically Identical to Standard JEDEC
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BAW56W
BAV70W
BAV99W
BAL99W
2002/95/EC
IEC61249
100Volts
200mWatts
OT-323
OT-323,
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Untitled
Abstract: No abstract text available
Text: BAW56W,BAV70W,BAV99W,BAL99W SURFACE MOUNT SWITCHING DIODES VOLTAGE 100Volts POWER SOT-323 200mWatts Unit: inch mm FEATURES .087(2.2) .070(1.8) • Electrically Identical to Standard JEDEC .054(1.35) .045(1.15) • High Conductance .087(2.2) .078(2.0) • Surface mount package Ideally Suited for Automatic insertion
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BAW56W
BAV70W
BAV99W
BAL99W
100Volts
OT-323
200mWatts
2002/95/EC
MIL-STD-750,
OT-323,
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marking FR PNP SOT323
Abstract: BF824W
Text: Philips Semiconductors Product specification PNP RF transistor BF824W FEATURES • S-mini package. H= FI 1 c APPLICATIONS It is especially Intended for RF stages in FM front-ends in common base configuration. Ü» Top view DESCRIPTION PNP transistor in a plastic SOT323
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OT323
BF824W
BF824W
UAU037
OT323)
marking FR PNP SOT323
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Untitled
Abstract: No abstract text available
Text: Philips Sem iconductors k b 53^31 ' N A f lE R 0 0 2 5 C1 E 7 fiS ^ ^B A P X P H IL IP S /D IS C R E T E P roduct specification b7E D PNP general purpose transistor FEATURES PMSS3906 PIN CONFIGURATION • S-mini package. DESCRIPTION PNP transistor in a plastic SOT323
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PMSS3906
OT323
MAM096
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547W FEATURES DESCRIPTION • Stable oscillator operation • Good thermal stability. Silicon NPN transistor in a plastic SOT323 S-mini package. The BF547W uses the same crystal as the
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BF547W
OT323
BF547W
BF547.
007434D
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