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    JB SMD ZENER DIODE Search Results

    JB SMD ZENER DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    JB SMD ZENER DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    F50380

    Abstract: SMD diode JB IEC825 MAX280 diode smd jb
    Text: SEOUL SEMICONDUCTOR Z-POWER LED Series Technical Datasheet for F50380 Z-Power series is designed for high current operation and high flux output applications. Features • Super high Flux output and high Luminance Z-Power LED's thermal management perform exceeds


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    PDF F50380 F50380 SMD diode JB IEC825 MAX280 diode smd jb

    F50381

    Abstract: bidirectional zener bidirectional zener diode
    Text: SEOUL SEMICONDUCTOR Z-POWER LED Series Technical Datasheet for F50381 Z-Power series is designed for high current operation and high flux output applications. Features • Super high Flux output and high Luminance Z-Power LED's thermal management perform exceeds


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    PDF F50381 F50381 bidirectional zener bidirectional zener diode

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


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    PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


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    Untitled

    Abstract: No abstract text available
    Text: AMC1200 SBAS542A – APRIL 2011 – REVISED AUGUST 2011 www.ti.com Fully-Differential Isolation Amplifier Check for Samples: AMC1200 FEATURES DESCRIPTION • The AMC1200 is a precision isolation amplifier with an output separated from the input circuitry by a


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    PDF AMC1200 SBAS542A AMC1200 UL1577 IEC60747-5-2.

    Untitled

    Abstract: No abstract text available
    Text: AMC1200-Q1 www.ti.com SBAS585 – SEPTEMBER 2012 Fully Differential Isolation Amplifier Check for Samples: AMC1200-Q1 FEATURES DESCRIPTION • The AMC1200-Q1 is a precision isolation amplifier with an output separated from the input circuitry by a silicon dioxide SiO2 barrier that is highly resistant to


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    PDF AMC1200-Q1 SBAS585 AMC1200-Q1 UL1577 IEC60747-5-2.

    Untitled

    Abstract: No abstract text available
    Text: AMC1100 www.ti.com SBAS562 – APRIL 2012 Fully-Differential Isolation Amplifier for Energy Metering Check for Samples: AMC1100 FEATURES DESCRIPTION • The AMC1100 is a precision isolation amplifier with an output separated from the input circuitry by a silicon dioxide SiO2 barrier that is highly resistant to


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    PDF AMC1100 SBAS562 AMC1100 UL1577 IEC60747-5-2.

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


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    PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    Untitled

    Abstract: No abstract text available
    Text: AMC1200 AMC1200B www.ti.com SBAS542B – APRIL 2011 – REVISED AUGUST 2012 Fully-Differential Isolation Amplifier Check for Samples: AMC1200, AMC1200B FEATURES DESCRIPTION • The AMC1200 and AMC1200B are precision isolation amplifiers with an output separated from the input


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    PDF AMC1200 AMC1200B SBAS542B AMC1200, AMC1200 AMC1200B AMC1200B) AMC1200) UL1577

    Untitled

    Abstract: No abstract text available
    Text: No.0032 Ver.001.10 Application Note XC9401 LED 照明 XC9401 アプリケーションノート www.torex.co.jp No.0032(Ver.001.10) 1. 製品概要 2. 製品特徴 3. ブロック図および各端子機能 4. 代表回路図および参考部品表 5. 動作説明


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    PDF XC9401 XC9401

    STK and STR integrated circuits

    Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
    Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram


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    PDF OD-80 OT-223 OT-89 STK and STR integrated circuits transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code

    Untitled

    Abstract: No abstract text available
    Text: AMC1204-Q1 www.ti.com SLAS886B – JULY 2012 – REVISED JANUARY 2013 20 MHz, Second-Order, Isolated Delta-Sigma Modulator for Current-Shunt Measurement Check for Samples: AMC1204-Q1 FEATURES DESCRIPTION • • The AMC1204-Q1 is a 1-bit digital output, isolated


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    PDF AMC1204-Q1 SLAS886B AMC1204-Q1 UL1577, IEC60747-5-2,

    Untitled

    Abstract: No abstract text available
    Text: AMC1204 AMC1204B www.ti.com SBAS512C – APRIL 2011 – REVISED AUGUST 2012 20MHz, Second-Order, Isolated Delta-Sigma Modulator for Current-Shunt Measurement Check for Samples: AMC1204, AMC1204B FEATURES DESCRIPTION • The AMC1204 and AMC1204B are 1-bit digital


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    PDF AMC1204 AMC1204B SBAS512C 20MHz, AMC1204, AMC1204 AMC1204B 20MHz. 4000VPEAK

    diode zener 8v2

    Abstract: DIODE BZV ZENER DIODES BZV 85 8V2
    Text: BZV 58 C 8V2.C 200 5 W Silizium-Leistungs-Z-Dioden Silicon-Power-Z-Diodes m in 8.2.200 V Nominal breakdown voltage Nenn-Arbeitsspannung ^— ±5% Tolerance o f zener voltage Toleranz der Arbeitsspannung j/ 4.5:ai Plastic case Kunststoffgehäuse ~ D0-201


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    PDF UL94V-0 D0-201 R0D1RS14 DGG174 000017S diode zener 8v2 DIODE BZV ZENER DIODES BZV 85 8V2

    Zener ZPD

    Abstract: zpd diode zener diode zpd 6 diode u2 a05 zpd 6.2 zener zpd1-zpd51 MW1 SMD diode MINImelf zener diode smd ZPD47 Zener ZPD 3.3
    Text: ZPD 1.ZPD 51 500 mW Silizium-Z-Dioden Silicon-Z-Diodes 0.75.51 V Nominal breakdown voltage Nenn-Arbeitsspannung ±5% Tolerance of zener voltage Toleranz der Arbeitsspannung ECU mox. h j - . , . n ax . ÇvO - K 0.56 DO-35 Glass case Glasgehäuse 0.13 g


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    PDF DO-35 000017S Zener ZPD zpd diode zener diode zpd 6 diode u2 a05 zpd 6.2 zener zpd1-zpd51 MW1 SMD diode MINImelf zener diode smd ZPD47 Zener ZPD 3.3

    Untitled

    Abstract: No abstract text available
    Text: 1 N 5345 B.1 N 5388 B 5 W Silizium-Leistungs-Z-Dioden Silicon-Power-Z-Diodes Nominal breakdown voltage Nenn-Arbeitsspannung 8.7.200 V Tolerance o f zener voltage Toleranz der Arbeitsspannung ±5% /4 .5 " Plastic case KunststofFgehäuse ~ D0-201 Weight approx.


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    PDF D0-201 UL94V-0 0D1RS14 DGG174

    smd glass dioden

    Abstract: No abstract text available
    Text: ZMM 1.ZMM 51 500 mW Silizium-Z-Dioden für die Oberflächenmontage Surface mount Silicon-Z-Diodes Nominal breakdown voltage Nenn-Arbeitsspannung 0.75.51 V Tolerance o f zener voltage Toleranz der Arbeitsspannung ±5% Glass case MiniMELF Glasgehäuse MiniMELF


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    PDF OD-80 R0D1RS14 smd glass dioden

    0s35

    Abstract: b17 zener diode
    Text: SIEMENS HITFET BTS 141 Smart Lowside Power Switch Features Product Summary • Logic Level Input Drain source voltage ^DS 60 V • Input Protection ESD On-state resistance ^DS(on) 28 m£2 • Thermal Shutdown Current limit 25 A • Overload protection Nominal load current


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    PDF 023SbDS 0s35 b17 zener diode

    m2aa

    Abstract: No abstract text available
    Text: SIEM ENS HITFET BTS 141 Smart Lowside Power Switch Features Product Summary • • • • • • • • • Continious drain source voltage On-state resistance Current limitation Load current ISO Clamping energy Logic Level Input Input protection (ESD)


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    PDF T0220 Q67060-S6502-A2 E3045A Q67060-S6502-A3 m2aa

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS HITFET BTS941 Smart Lowside Power Switch Product Summary Features • Logic Level Input Continuous drain source voltage • Input protection ESD On-state resistance • Thermal shutdown Current limitation • Overload protection Load current (ISO)


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    PDF BTS941 A235b05 T0220/5 TQ220/5_ E3062A Q67060-S6702-A2 Q67060-S6702-A4 PT0S904 GPT05165

    transistor SMD t07

    Abstract: SMD Transistor t07 BTS 302 BTS 410 E2 E3043 STT 3 SIEMENS transistor t07 circuit diagram obd diagnostic bts 410d2 SMD code E2 BTS410E2
    Text: • flE35b05 OOfllMBO T07 ■ SIEM EN S PROFET BTS410E2 Smart Highside Power Switch Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation Features • • • • • • • • • • • •


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    PDF flE35b05 BTS410E2 023Sb05 TQ-220AB/5 Q67060-S6102-A2 CPI05t6S O-22QAB/5, E3043 E3043 Q67060-S6102-A3 transistor SMD t07 SMD Transistor t07 BTS 302 BTS 410 E2 E3043 STT 3 SIEMENS transistor t07 circuit diagram obd diagnostic bts 410d2 SMD code E2 BTS410E2

    VPT05164

    Abstract: Price SIEMENS TD-400 BTS133 siemens relay dc 12v GPT05155 GPT05164 BTS 133 SEMICONDUCTOR DISCRETE STANDARD TYPES siemens siemens frg
    Text: SIEMENS HITFET BTS 133 Smart Lowside Power Switch Features Product Summary • Logic Level Input Drain source voltage ^ ds 60 V • Input Protection ESD On-state resistance ^)S(on) 50 m i) • Thermal Shutdown Current limit foflim) 21 A • Overload protection


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    PDF 23SbDs VPT05164 Price SIEMENS TD-400 BTS133 siemens relay dc 12v GPT05155 GPT05164 BTS 133 SEMICONDUCTOR DISCRETE STANDARD TYPES siemens siemens frg

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS HITFET BTS 133 Smart Lowside Power Switch Features Product Summary • Logic Level Input Drain source voltage ^DS 60 V • Input Protection ESD On-state resistance ^)S(on) 50 mi) • Thermal Shutdown Current limit fo(lim) 21 A • Overload protection


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    PDF a53Sb05

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS HITFET BTS 149 Smart Lowside Power Switch Features Product Summary • Logic Level Input Drain source voltage • Input Protection ESD On-state resistance • Thermal Shutdown V ^DS(on) 18 mQ Current limit b(Y\m) 30 A • Overload protection Nominal load current


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    PDF NIS01