JESD51
Abstract: JEDEC51-12 JESD51-12 JESD51-1 JESD51-7 JESD51-4 JESD-51 APP4083 JESD51-8 JEDEC JESD51-8
Text: Maxim > App Notes > GENERAL ENGINEERING TOPICS Keywords: Thermal, Theta-ja, Theta-jc, heat, Theta-jb, Psi-jb Jul 16, 2007 APPLICATION NOTE 4083 Thermal Characterization of IC Packages Abstract: Thermal characterization of packages is critical for the performance and reliability of IC applications.
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com/an4083
AN4083,
APP4083,
Appnote4083,
JESD51
JEDEC51-12
JESD51-12
JESD51-1
JESD51-7
JESD51-4
JESD-51
APP4083
JESD51-8
JEDEC JESD51-8
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BAL74
Abstract: SOT23 BAL74 BAR74 sot23 jb DSA003668 50V 0.2uF 02uF
Text: SOT23 HIGH SPEED SWITCHING DIODES BAL74 BAR74 BAL74 BAR74 ISSUE 3 FEBRUARY 1997 PIN CONFIGURATION Circuit For Measuring Switching Time IF=10mA ! 0mA Irr VIN VOUT IR=10mA 1kΩ PARTMARKING DETAILS BAL74 JC BAR74 JB 0.1µF +11V Trr2 2 1 0.2µF BAL74
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BAL74
BAR74
100ns
100mA
BAL74
SOT23 BAL74
BAR74
sot23 jb
DSA003668
50V 0.2uF
02uF
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Untitled
Abstract: No abstract text available
Text: S10JB80 Voltage 800V 10.0 Amp Glass Passivited Bridge Rectifiers Elektronische Bauelemente RoHS compliant product A suffix of “-C” specifies halogen & lead-free FEATURES JB Ideal for printed circuit board Low forward voltage drop, high current capability
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S10JB80
24-Apr-2013
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Untitled
Abstract: No abstract text available
Text: S6JB80 Voltage 800V 6.0 Amp Glass Passivited Bridge Rectifiers Elektronische Bauelemente RoHS compliant product A suffix of “-C” specifies halogen & lead-free JB FEATURES Ideal for printed circuit board Low forward voltage drop, high current capability
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S6JB80
24-Apr-2013
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E 62320
Abstract: 100JB-L IRF 725 100JB 26MB-A 36MB-A 250JB-L
Text: Bulletin I2715 rev. E 08/97 MB & JB SERIES SINGLE PHASE BRIDGE Power Modules Features 10 A 25 A 35 A Universal, 3 way terminals: push-on, wrap around or solder High thermal conductivity package, electrically insulated case Center hole fixing Excellent power/volume ratio
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I2715
100JB-L
26MB-A
36MB-A
250JB-L
35MB-A
E 62320
IRF 725
100JB
36MB-A
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marking JB SCHOTTKY BARRIER DIODE
Abstract: marking JB diode SG40TC12M diode marking jb
Text: Schottky Barrier Diode Twin Diode mtmm SG40TC12M o u tlin e Package : FTO-220G Unit : mm o -y H d ^ J 120V 40A 4.5 Feature • Tj=175°C • • • • • 7 Jb = E -Jb K • < S Ir = 6 0 |j A Tj=175°C Full Molded Low Ir=60|jA Resistance for thermal run-away
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FTO-220G
SG40TC12M
J533-1)
50IIz
J533-1
marking JB SCHOTTKY BARRIER DIODE
marking JB diode
SG40TC12M
diode marking jb
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marking JB SCHOTTKY BARRIER DIODE
Abstract: marking JB diode diode marking jb
Text: Schottky Barrier Diode Twin Diode mtmm S G 20T C 1 2 M o u t lin e U nit : mm Package : FTO-220G o -y H d ^ J 120V 20A 4.5 Feature • Tj=175°C • 7 Jb = E -Jb K • Tj=175°C • <SIr =30|j A • Low Ir =30| jA • Resistance for thermal run-away • Full Molded
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FTO-220G
J533-1)
SG20TC12M
50IIz
marking JB SCHOTTKY BARRIER DIODE
marking JB diode
diode marking jb
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode mtmm SG 30TC 12M Unit : mm Package : FTO-220G o -y H d ^ J 120V 30A 4.5 Feature • Tj=175°C • • • • • 7 Jb = E -Jb K • o u t lin e Ir=40|jA Tj=175°C Full Molded Low Ir=40|jA Resistance for thermal run-away
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FTO-220G
J533-1)
SG30TC12M
50IIz
J533-1
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BAR74
Abstract: No abstract text available
Text: SIEMENS Silicon Switching Diode BAR 74 • For high-speed switching Type Marking Ordering Code tape and reel B A R 74 JB s Q62702-F704 Pin Configuration Package1) SOT-23 °-^ -O 1 EKA07003 Maximum Ratings Parameter Symbol Values Unit Reverse voltage
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Q62702-F704
OT-23
EHS00011
BAR74
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Q62702-A615
Abstract: marking JB Q62702-A704 marking JB diode 74 MARKING CODE 74 MARKING
Text: Silicon Switching Diode • BAR 74 For high-speed switching Type 0 BAR 74 Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package JB Q62702-A615 Q62702-A704 SOT 23 Maximum ratings Parameter Symbol Ratings Unit Reverse voltage
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Q62702-A615
Q62702-A704
Q62702-A615
marking JB
Q62702-A704
marking JB diode
74 MARKING CODE
74 MARKING
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1SR35-100
Abstract: No abstract text available
Text: 3t — K/Diodes 1SR35-100A/1SR35-200A/1SR35-400A 1SR35-1OOA/1SR35-200A 1SR35-400A Silicon Diffused Junction Glass-Sealed Rectifying Diodes 1 * '- 7 3 JEDEC : DO- 41 )„ 2) • Features 1) Glass sealed type (JEDEC : DO41). 2) High reliability. • JBÎÊ
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1SR35-100A/1SR35-200A/1SR35-400A
1SR35-1OOA/1SR35-200A
1SR35-400A
1SR35-100A
1SR35-200A
1SR35-100
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Untitled
Abstract: No abstract text available
Text: Silicon Switching Diode 3SE D • BAR 74 053b3E0 OOlbM^G Ü ■ SIP SIEMENS/ SP CLi SEMICONDS For high-speed switching Type B BAR 74 Marking JB Ordering code for versions In bulk Q62702-A615 Ordering code for versions on 8 mm-tape Q62702-A704 Package SOT 23
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053b3E0
Q62702-A615
Q62702-A704
175PF
23b32Ã
T-03-Q9
023b3SD
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2FI100G
Abstract: 30S3 2fi100
Text: 2FI100G 2xiooa W JB '+ jä : Outline Drawings FAST RECOVERY DIODE MODULE etc_ 17.8 Features H -J L . 1« • If e lM U W f t * • 3 Ì « Short Reverse Recovery Time Variety of Connection Menu Insulated Type : Applications •7 — r- r^ n ^ r- |
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2FI100G
2FI100Gâ
50/60Hz
2X100
MTg30113^
11S19%
I95t/R89
Shl50
30S3
2fi100
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Untitled
Abstract: No abstract text available
Text: isocon COnPONENTS LTD Jb • 7SC 4flflbSlQ DOOOlflB 17b • ISO D 3 SFH601 -1, SFH601 -2, SFH601 -3. SFH601-4, SFH601-5 OPTICALLY COUPLED ISOLATORS IS0C0Mf INC. 274 E. HAMILTON AVE. SUITE F CAMPBELL, CA. 95008 ABSOLUTE MAXIMUM RATINGS 25°C unless otherwise noted
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SFH601
SFH601-4,
SFH601-5
SFH601-1
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E 62320
Abstract: 62320 rectifier E.62320 36MT120A 26mt120a 26MT40A 36MT60A 36MT80A 26MT60A 26MT80A
Text: t International gü]Rectifier s e r ie s m b SINGLE PHASE BRIDGE & jb Power Modules 10A 25A 35A Features • Universal, 3 way terminals: push-on, wrap around o r solder ■ High thermal conductivity package, electrically insulated case ■ C snier hole fixing
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100JB-L
26MB-A
250JB-L
36MB-A
35MB-A
E 62320
62320 rectifier
E.62320
36MT120A
26mt120a
26MT40A
36MT60A
36MT80A
26MT60A
26MT80A
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62320 rectifier
Abstract: e62320
Text: I Bulletin 12715 rev. E 0 8 /97 International IQR Rectifier m b & jb series SINGLE PHASE BRIDGE Power Modules 10 A 25 A 35 A Features • Universal, 3 way terminals: push-on, wrap around or solder ■ High thermal conductivity package, electrically insulated case
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100JB
250JB
62320 rectifier
e62320
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diode 1n4007
Abstract: 1N4007 diodes 1n4007 FAH diode diode,1N4007 Diode -1N4007 1a 1000v 47146 I-26366 DIODE1N4007
Text: Diode Plugs D LS 2 DLS 2 for SAKR-D for SAKR-D WSD 2.5 WTR 2.5 D DQS 2 for 6mm-wide terminus mm SAKR-D SAKR-D WTR 2.5 D JB ^ with diode plug with test sockets m p Term, width +.2 assy. tol. mm Insulation stripping length mm C onnection data Screw connection, solid
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1N4007
I--------26366
1N4007,
1N4007
diode 1n4007
diodes 1n4007
FAH diode
diode,1N4007
Diode -1N4007
1a 1000v
47146
I-26366
DIODE1N4007
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TI43A
Abstract: No abstract text available
Text: ERC30 i .5A : Outline Drawings FAST RECOVERY DIODE A I Features • y * > 2 'X f c :- K a i # # c a t ' W ^ S uper high speed sw itchin g. tjz : Marking • te V F Ä 5-P-K: £ Color code : Orange Low Vp IS S JB S Abridged type name High reliability o •
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ERC30
1995-9095t/R89
TI43A
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Untitled
Abstract: No abstract text available
Text: CD54HC30, CD74HC30, CD74HCT30 Jb Tfxas In s t r u m e n t s Data sheet acquired from Harris Sem iconductor , . SCHS121 , _ . , High Speed CMOS Logic 8-lnput NAND Gate August 1997 Features Description • Buffered Inputs The Harris CD74HC30, CD74HCT30, each contain an 8-input
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CD54HC30,
CD74HC30,
CD74HCT30
CD74HCT30,
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Untitled
Abstract: No abstract text available
Text: ERB32 1.2A *± /J : Outline D raw ings FAST RECOVERY DIODE : Features : M arking Super high speed sw itching • iftV F ' ffi Low V F Color code CD B Ä JB * A b ridged High reliability ty p e Vo ltoge o » : Applications Lot : O range nome class ro ° C a tho de
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ERB32
l95t/RB9
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER bSE D International Hil]Rectifier • MÖSSHS2 DDlbMfi? 751 ■ s e r ie s mb SINGLE PHASE BRIDGE & jb Power Modules 1 0 A Features 2 5 A ■ Universal, 3 way terminals: push-on, wrap around or solder ■ High thermal conductivity package,
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100JB-L
36MB-A
250JB-L
35MB-A
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Untitled
Abstract: No abstract text available
Text: D 1 I O 3 O Z - 1 2 O 3 a )V ^<7 — : Outline Drawings P O W ER TRA N SISTO R MODULE : Features • SBfiJGE High Voltage • 7 'J — 'J V • ASO Jb'"J2iL' -f Krt/BE Including Free W heeling Diode Excellent Safe Operating Area Insulated Type : A p p lica tio n s
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l95t/R89
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Untitled
Abstract: No abstract text available
Text: 7 -f> l U tipe Super Fast Recovery Diode Twin Diode OUTLINE DIMENSIONS D5LC20UR Case : ITO -220 200V 5A É lit . # •trr 3 5 n s • 7 JIÆ -JL /K •S R B S m • 3 7 J — m -Y Jb OA. SSBÆ •a«, « s . • Æ tè ü fa RATINGS Absolute Maximum Ratings
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D5LC20UR
DD0343Ã
000343T
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LE5000
Abstract: D3L20 SHINDENGEN DIODE D3L20U
Text: U tipe Super Past Recovery Diode Single Diode OUTLINE DIMENSIONS D3L20U Case : ITO-220 200V 2.5A •e y -fX # trr 3 5 n s • 7 /lÆ -Jb K m it • S R « ig myu-TU'i'Ju 9mm. •a«. OA. eìto • * . fa ■ Æ tè H RATINGS A bsolute M ax im u m Ratings Ratings
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D3L20U
ITO-220
ff140
LE5000
D3L20
SHINDENGEN DIODE
D3L20U
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