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    JAPANESE TRANSISTOR 2010 Search Results

    JAPANESE TRANSISTOR 2010 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    JAPANESE TRANSISTOR 2010 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 2sk

    Abstract: JAPANESE 2SC TRANSISTOR DATA BOOK 2010 JAPANESE 2SC TRANSISTOR 2010 JAPANESE TRANSISTOR 2SC DATA BOOK 2010 Transistor 2SA 2SB 2SC 2SD JAPANESE TRANSISTOR 2SC 2010 transistor 2SA data book C7012 JAPANESE TRANSISTOR 2SC data book transistors 2SA
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF REJ27G0001-0100Z/Rev transistor 2sk JAPANESE 2SC TRANSISTOR DATA BOOK 2010 JAPANESE 2SC TRANSISTOR 2010 JAPANESE TRANSISTOR 2SC DATA BOOK 2010 Transistor 2SA 2SB 2SC 2SD JAPANESE TRANSISTOR 2SC 2010 transistor 2SA data book C7012 JAPANESE TRANSISTOR 2SC data book transistors 2SA

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF do-900 Unit2607

    RENESAS marking code package

    Abstract: 2SC5700 HTT1213E smd transistor code B2
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF d-900 Unit2607 RENESAS marking code package 2SC5700 HTT1213E smd transistor code B2

    2SC5938A

    Abstract: RT3C99M
    Text: RT3C99M Composite Transistor For Muting Application Silicon Npn Epitaxial Type OUTLINE DRAWING Unit：mm 1.25 ① ⑥ 0.65 2.1 2SC5938A chips in SC-88 package. ② ⑤ 0.65 RT3C99M is compound transistor built with two ③ ④ FEATURE Silicon NPN epitaxial type


    Original     		PDF RT3C99M 2SC5938A SC-88 RT3C99M JEITASC-88

    rt3t77m

    Abstract: No abstract text available
    Text: PRELIMINARY RT3T77M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3T77M is compound transistor built with RT1N140 chip and RT1P140 chip in SC-88 package. FEATURE Silicon epitaxial type


    Original     		PDF RT3T77M RT3T77M RT1N140 RT1P140 SC-88 JEITASC-88

    RT3T66M

    Abstract: No abstract text available
    Text: PRELIMINARY RT3T66M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3T66M is compound transistor built with RT1N430 chip and RT1P430 chip in SC-88 package. FEATURE Silicon epitaxial type


    Original     		PDF RT3T66M RT3T66M RT1N430 RT1P430 SC-88 JEITASC-88

    rt3tssm

    Abstract: No abstract text available
    Text: PRELIMINARY RT3TSSM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3TSSM is compound transistor built with RT1N150 chip and RT1P150 chip in SC-88 package. FEATURE Silicon epitaxial type


    Original     		PDF RT1N150 RT1P150 SC-88 JEITASC-88 rt3tssm

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY RT3TLLM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3TLLM is compound transistor built with RT1N230 chip and RT1P230 chip in SC-88 package. FEATURE Silicon epitaxial type


    Original     		PDF RT1N230 RT1P230 SC-88 JEITASC-88

    Untitled

    Abstract: No abstract text available
    Text: RT3TTTM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION RT3TTTM is compound transistor built with RT1N250 OUTLINE DRAWING Unit：mm chip and RT1P250 chip in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.


    Original     		PDF RT1N250 RT1P250 SC-88 JEITASC-88

    M52461

    Abstract: STR with 6pin 10PIN 11PIN 12PIN 13PIN M52461GP SSOP16-P-225-0 M5246 pulse stretcher circuit diagram
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    RT1P136

    Abstract: No abstract text available
    Text: PRELIMINARY RT3TCCM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3TCCM is compound transistor built with RT1N136 chip and RT1P136 chip in SC-88 package. FEATURE Silicon epitaxial type


    Original     		PDF RT1N136 RT1P136 SC-88 JEITASC-88

    RT3TFFM

    Abstract: No abstract text available
    Text: PRELIMINARY RT3TFFM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3TFFM is compound transistor built with RT1N431 chip and RT1P431 chip in SC-88 package. FEATURE Silicon epitaxial type


    Original     		PDF RT1N431 RT1P431 SC-88 JEITASC-88 RT3TFFM

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY RT3TBBM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3TBBM is compound transistor built with RT1N231 chip and RT1P231 chip in SC-88 package. FEATURE Silicon epitaxial type


    Original     		PDF RT1N231 RT1P231 SC-88 JEITASC-88

    RT3T11M

    Abstract: Isahaya Electronics RT1N141 RT1P141
    Text: PRELIMINARY RT3T11M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3T11M is compound transistor built with RT1N141 chip and RT1P141 chip in SC-88 package. FEATURE Silicon epitaxial type


    Original     		PDF RT3T11M RT3T11M RT1N141 RT1P141 SC-88 JEITASC-88 Isahaya Electronics RT1N141

    RT1P441

    Abstract: RT3T33M
    Text: PRELIMINARY RT3T33M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3T33M is compound transistor built with RT1N441 chip and RT1P441 chip in SC-88 package. FEATURE Silicon epitaxial type


    Original     		PDF RT3T33M RT3T33M RT1N441 RT1P441 SC-88 JEITASC-88

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY RT3TAAM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3TAAM is compound transistor built with RT1N151 chip and RT1P151 chip in SC-88 package. FEATURE Silicon epitaxial type


    Original     		PDF RT1N151 RT1P151 SC-88 JEITASC-88

    Untitled

    Abstract: No abstract text available
    Text: RT3YA7M Composite Transistor For Muting Application DESCRIPTION OUTLINE DRAWING RT3YA7M is a composite transistor built with RT1P140 and Unit：mm two muting transistor with resistor in SC-88 package. FEATURE ・RT3YA7M is built in RTr1 side RT1P140,and RTr2,RTr3 side


    Original     		PDF RT1P140 SC-88 JEITASC-88

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY RT3TDDM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3TBBM is compound transistor built with RT1N237 chip and RT1P237 chip in SC-88 package. FEATURE Silicon epitaxial type


    Original     		PDF RT1N237 RT1P237 SC-88 JEITASC-88

    RT1P436

    Abstract: No abstract text available
    Text: RT3THHM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION RT3THHM is compound transistor built with RT1N436 OUTLINE DRAWING Unit：mm chip and RT1P436 chip in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.


    Original     		PDF RT1N436 RT1P436 SC-88 JEITASC-88

    RT3T22M

    Abstract: RT1N241
    Text: PRELIMINARY RT3T22M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3T22M is compound transistor built with RT1N241 and RT1P241 in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.


    Original     		PDF RT3T22M RT3T22M RT1N241 RT1P241 SC-88 JEITASC-88 RT1N241

    vno300m

    Abstract: 2SC2382 epa 2391 2SA103 THB 6 2411 175mhz 12.5v 40w te 2395 138B 138D 2SA1028
    Text: 5 - - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF 100kQ 500MIh, 200MHz) 2SA103I5 vno300m 2SC2382 epa 2391 2SA103 THB 6 2411 175mhz 12.5v 40w te 2395 138B 138D 2SA1028

    2sa1066

    Abstract: SVI 2004 138f SVI 2004 A 138D 2SA952 2SA953 2SA954 2SC1991 IFR 630
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF 200MHz) 2SA1066 27MHz, SVI 2004 138f SVI 2004 A 138D 2SA952 2SA953 2SA954 2SC1991 IFR 630

    2SA571

    Abstract: 2SC89 TRANSISTOR 318a 154B 352A EP-205
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF 100MHz 100MHz) 2SA571 2SC89 TRANSISTOR 318a 154B 352A EP-205

    2sa467

    Abstract: 2SC362 EL504 RF202
    Text: - 5 - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF 930Mc 2sa467 2SC362 EL504 RF202