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    JAPAN B-CAS CARD Search Results

    JAPAN B-CAS CARD Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CC1100ERGPT Texas Instruments Low-Power Sub-1GHz RF Transceiver for China and Japan frequency bands 20-QFN -40 to 85 Visit Texas Instruments Buy
    CC1100ERGPR Texas Instruments Low-Power Sub-1GHz RF Transceiver for China and Japan frequency bands 20-QFN -40 to 85 Visit Texas Instruments Buy
    PCI1520ZWT Texas Instruments PC card controller Visit Texas Instruments Buy
    PCI1520IZWT Texas Instruments PC card controller Visit Texas Instruments Buy
    PCI1420PDV Texas Instruments PC Card Controller 208-LQFP Visit Texas Instruments
    LMG3422EVM-043 Texas Instruments LMG3422R030 600-V 30-m℩ half-bridge daughter card Visit Texas Instruments Buy

    JAPAN B-CAS CARD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SDHC schematic

    Abstract: SDIO CARD Layout EVK1104 sdhc atmel AVR32787 EVK1104 ADC SDHC avr write read to mmc sdio mmc connector TPA152
    Text: AVR32801: UC3A3 Schematic Checklist Features • • • • • • • • Power circuit Reset circuit USB connection External bus interface ABDAC sound DAC interface JTAG and Nexus debug ports Clocks and crystal oscillators MMC, SD-card, SDHC, SDIO and CE-ATA interface


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    PDF AVR32801: 32-bit 32130B-AVR32-04/10 SDHC schematic SDIO CARD Layout EVK1104 sdhc atmel AVR32787 EVK1104 ADC SDHC avr write read to mmc sdio mmc connector TPA152

    LE57D111TC

    Abstract: Le57D11TC PLCC-48 footprint TISP61089
    Text: P R E L I M I N A R Y Dual SLIC Dual Subscriber Line Interface Circuit Le57D11 Device APPLICATIONS    DESCRIPTION Ideal for low cost, high performance line card applications CO, DLC Meets requirements for countries such as: China, Korea, Japan, Taiwan, and Australia


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    PDF Le57D11 GF0029002 Programm5521 SE-16970 LE57D111TC Le57D11TC PLCC-48 footprint TISP61089

    EBJ17RG4EFWP-GN-F

    Abstract: EBJ17RG4EFWP
    Text: COVER DATA SHEET 16GB Registered DDR3L SDRAM DIMM EBJ17RG4EFWD EBJ17RG4EFWP 2048M words 72 bits, 2 Ranks Specifications Features • Density: 16GB • Organization — 2048M words  72 bits, 2 ranks • Mounting 36 pieces of 4G bits DDR3L SDRAM sealed


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    PDF EBJ17RG4EFWD EBJ17RG4EFWP 2048M 240-pin 1600Mbps/1333Mbps M01E1007 E2003E10 EBJ17RG4EFWP-GN-F EBJ17RG4EFWP

    EBJ81RF4EDWP-GN-F

    Abstract: Elpida Memory
    Text: COVER DATA SHEET 8GB Registered DDR3L SDRAM DIMM EBJ81RF4EDWD EBJ81RF4EDWP 1024M words 72 bits, 2 Ranks Specifications Features • Density: 8GB • Organization — 1024M words  72 bits, 2 ranks • Mounting 36 pieces of 2G bits DDR3L SDRAM sealed


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    PDF EBJ81RF4EDWD EBJ81RF4EDWP 1024M 240-pin 1600Mbps/1333Mbps M01E1007 E1816E40 EBJ81RF4EDWP-GN-F Elpida Memory

    Untitled

    Abstract: No abstract text available
    Text: COVER PRELIMINARY DATA SHEET 4GB Unbuffered DDR3L SDRAM DIMM EBJ40EG8EFWA 512M words  72 bits, 1 Rank Specifications Features • Density: 4GB • Organization — 512M words  72 bits, 1 rank • Mounting 9 pieces of 4G bits DDR3L SDRAM sealed in FBGA


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    PDF EBJ40EG8EFWA 240-pin 1600Mbps/1333Mbps M01E1007 E1952E10

    EDJ4208BBBG

    Abstract: EDJ4208BBBG-GN-F EDJ4208BBBG-DJ-F EDJ4204BBBG EBJ40UG8BBU0
    Text: DATA SHEET 4GB DDR3 SDRAM SO-DIMM EBJ40UG8BBU0 512M words x 64 bits, 1 Rank Specifications Features • Density: 4GB • Organization  512M words × 64 bits, 1 rank • Mounting 8 pieces of 4G bits DDR3 SDRAM sealed in FBGA • Package: 204-pin socket type small outline dual


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    PDF EBJ40UG8BBU0 204-pin 1600Mbps/1333Mbps to1066Mbps/800Mbps/667Mbps M01E1007 E1833E20 EDJ4208BBBG EDJ4208BBBG-GN-F EDJ4208BBBG-DJ-F EDJ4204BBBG EBJ40UG8BBU0

    capacitor 56J pF

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 3VEDOB72D~ SEMICONbUCTOR TECHNICAL DATA — lM x72 DRAM Dual-In-Line Memory Module DIMM 3.3 V, EDO, Buffered For Error Correction Code Applications 8 Megab~e JEDEGStandard 168–Lead Dual-In-tine Single 3.3 V Power Supply, LWL<ompatible


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    PDF 3VEDOB72D~ 1Mx72s3V 140W1-247 602-2W609 3VEDOB72DID capacitor 56J pF

    Micron 48LC8M16

    Abstract: PCI08-DK sam9708 48lc8m16 PCI08-DK sam9708 RAS13-CAS9 MIDI SAM9708 k335 WD-065 ATSAM9708
    Text: Features • One Audio ADC • • • • • – Burr-Brown PCM1800 20bit 95dB SNR Two Audio DACs – Burr-Brown PCM1739 (24bit 105dB SNR) 128Mbit SDRAM – Micron® 48LC8M16 (8M x 16) FPGA for PCI management – XILINX® XCS30XL DIMM socket for SDRAM expansion up to 256 MB


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    PDF PCM1800 20bit PCM1739 24bit 105dB 128Mbit 48LC8M16 XCS30XL ATSAM9708 PCI08-DK Micron 48LC8M16 PCI08-DK sam9708 48lc8m16 sam9708 RAS13-CAS9 MIDI SAM9708 k335 WD-065

    EDJ4208BBBG-DJ-F

    Abstract: EDJ4208BBBG-GN-F EDJ4208BBBG EDJ4204BBBG EBJ81UG8BBU0 E1800E
    Text: DATA SHEET 8GB DDR3 SDRAM SO-DIMM EBJ81UG8BBU0 1024M words x 64 bits, 2 Ranks Specifications Features • Density: 8GB • Organization  1024M words × 64 bits, 2 ranks • Mounting 16 pieces of 4G bits DDR3 SDRAM sealed in FBGA • Package: 204-pin socket type small outline dual


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    PDF EBJ81UG8BBU0 1024M 204-pin 1600Mbps/1333Mbps to1066Mbps/800Mbps/667Mbps M01E1007 E1803E20 EDJ4208BBBG-DJ-F EDJ4208BBBG-GN-F EDJ4208BBBG EDJ4204BBBG EBJ81UG8BBU0 E1800E

    IDQ25186

    Abstract: MA721 VSS1641NC IMX72 Li-49 39NC60 motorola bq50
    Text: Order ttis document by 5VFPMB72D/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1Mx72 DRAM Dual-In-Line Memory Module DIMM 5 V, FPM, Buffered For Error Correction Code Applications 8 Megabyte . JEDEC–Standard ● Single 5 V Power Supply, ~L_Compatible ● Fast Page Mode (FPM)


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    PDF 5VFPMB72D/D 1Mx72 MA721 BJ48TADG60 140N1-2 5VFPMB72D~ IDQ25186 VSS1641NC IMX72 Li-49 39NC60 motorola bq50

    EDJ2108BCSE-DJ-F

    Abstract: EDJ2108BCSE-DJ-F rev C udimm 2g EbJ20ef8bcfa-dj-f Elpida DDR3 manual
    Text: DATA SHEET 2GB Unbuffered DDR3 SDRAM DIMM EBJ20EF8BCFA 256M words x 72 bits, 1 Rank Specifications Features • Density: 2GB • Organization  256M words × 72 bits, 1 rank • Mounting 9 pieces of 2G bits DDR3 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory


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    PDF EBJ20EF8BCFA 240-pin 1600Mbps/1333Mbps M01E1007 E1746E10 EDJ2108BCSE-DJ-F EDJ2108BCSE-DJ-F rev C udimm 2g EbJ20ef8bcfa-dj-f Elpida DDR3 manual

    Untitled

    Abstract: No abstract text available
    Text: COVER DATA SHEET 4GB Unbuffered DDR3 SDRAM DIMM EBJ40EG8BFWB 512M words x 72 bits, 1 Rank Specifications Features • Density: 4GB • Organization — 512M words × 72 bits, 1 rank • Mounting 9 pieces of 4G bits DDR3 SDRAM sealed in FBGA • Package: 240-pin socket type dual in-line memory


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    PDF EBJ40EG8BFWB 240-pin 1866Mbps/1600Mbps/1333Mbps M01E1007 E1977E30

    Untitled

    Abstract: No abstract text available
    Text: COVER DATA SHEET 8GB Unbuffered DDR3 SDRAM DIMM EBJ81EG8BFWB 1024M words  72 bits, 2 Ranks Specifications Features • Density: 8GB • Organization — 1024M words  72 bits, 2 ranks • Mounting 18 pieces of 4G bits DDR3 SDRAM sealed in FBGA • Package: 240-pin socket type dual in-line memory


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    PDF EBJ81EG8BFWB 1024M 240-pin 1866Mbps/1600Mbps/1333Mbps M01E1007 E1978E20

    ELPIDA DDR3L

    Abstract: No abstract text available
    Text: COVER DATA SHEET 4GB DDR3L SDRAM SO-DIMM EBJ40UG8EFU0 512M words  64 bits, 1 Rank Specifications Features • Density: 4GB • Organization — 512M words  64 bits, 1 rank • Mounting 8 pieces of 4G bits DDR3L SDRAM sealed in FBGA • Package: 204-pin socket type small outline dual in-line


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    PDF EBJ40UG8EFU0 204-pin 1600Mbps/1333Mbps 1066Mbps/800Mbps /667Mbps M01E1007 E1938E30 ELPIDA DDR3L

    EBJ40UG8EFU0

    Abstract: EBJ40UG8EFU0-GN-F
    Text: COVER PRELIMINARY DATA SHEET 4GB DDR3L SDRAM SO-DIMM EBJ40UG8EFU0 512M words  64 bits, 1 Rank Specifications Features • Density: 4GB • Organization — 512M words  64 bits, 1 rank • Mounting 8 pieces of 4G bits DDR3L SDRAM sealed in FBGA • Package: 204-pin socket type small outline dual in-line


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    PDF EBJ40UG8EFU0 204-pin 1600Mbps/1333Mbps 1066Mbps/800Mbps /667Mbps M01E1007 E1938E10 EBJ40UG8EFU0 EBJ40UG8EFU0-GN-F

    jeida dram 88 pin

    Abstract: No abstract text available
    Text: MEMORY DRAM CARD JllD A * liR Ä M ö ird Guide Line Ver. 2.0] cöMörrnabie 8 DYNAMIC RANDOM ACCESS MEMORY CARD 16 M/32 M - B Y T E DESCRIPTION The MB98B7515 is a DRAM Card 4,194,304 words x 32 bits with eight MB8117400A’s mounted. The MB98B7516 is a DRAM Card (4,194,304 words x 36 bits) viith eight MB8117400A’s and four MB814100A


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    PDF MB98B7515 MB8117400A MB98B7516 MB814100A MB98B7517 MB98B7518 jeida dram 88 pin

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU January 1994 Edition 1.0 DATA SHEET MB98B7513-80 DRAM MEMORY CARD DYNAMIC RANDOM ACCESS MEMORY CARD 4M x 16 bits / 2M x 32 bits The Fujitsu MB98B7513 is a Dynamic Random Access Memory DRAM card consisting of sixteen MB814400AL devices. This card is capable of storing and


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    PDF MB98B7513-80 MB98B7513 MB814400AL 88-pin 16-bit 32-bit 000b405 MB98B

    Untitled

    Abstract: No abstract text available
    Text: December 1993 Edition 1.0 FUpSU DATA SHEET M B 9 8 B 7 5 14-80 DRAM MEMORY CARD DYNAMIC RANDOM ACCESS MEMORY CARD 4M x 18 bits / 2M x 36 bits The Fujitsu MB98B7514 is a Dynamic Random Access Memory DRAM card consisting of sixteen MB814400AL devices and eight MB81C1000AL devices.


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    PDF MB98B7514 MB814400AL MB81C1000AL 88-pin 18-bit 36-bit MB98B7514-80 CRD-88P-M01)

    j2449

    Abstract: No abstract text available
    Text: N EW PRODUCT HB56G136CC Series 1,048,576-Word X 36-Bit High Density Dynamic RAM Card 0H IT A C H I Rev.O Ju l. 03, 1992 Description The HB56G136CC is a 1M X 36 dynamic R A M Card, mounted 8 pieces of 4Mbit D RAM HM514900LTT sealed in T SO P package. An outline of the HB56G13GCC is 88-pin two piece connector package.


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    PDF HB56G136CC 576-Word 36-Bit HM514900LTT) HB56G13GCC 88-pin j2449

    Untitled

    Abstract: No abstract text available
    Text: January 1994 Edition 1.0 FUJITSU DATA SHEET MB98B7512-80 DRAM MEMORY CARD D Y N A M IC R A N D O M A C C E S S M EM O RY CARD 2M x 18 bits / 1 M x 36 bits The Fujitsu M B98B7512 is a Dynam ic Random Access Memory DRAM card consisting of eight MB814400AL devices and four MB81C1000AL devices. This


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    PDF MB98B7512-80 B98B7512 MB814400AL MB81C1000AL 88-pin 18-bit 37MT75b

    D4104

    Abstract: nlpin
    Text: iN E m p R O D u m im m m i HB56G132CC- x x S Series 1,048,576-WordX 32-Bit High Density Dynamic RAM Card Rev.l Dec. 08,1992 0 H IT A C H I D escrip tion The IIB56G132CC-X X S is a 1MX 32 dynamic RAM Card, m ounted 8 pieces of 4M bit DRAM HM51S4800ALTT sealed inTSO P package.


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    PDF HB56G132CC- 576-WordX 32-Bit IIB56G132CC-X HM51S4800ALTT) 88-pin IIB56G132CC- HB56G132CC-X D4104 nlpin

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs iia m m a c r y Some of contents are subject to change without notice. MH4V645/6445AXJJ-5,-6,-5S,-6S HYPER PAGE MODE 268435456-BIT 4194304-WQRD BY 64-BIT DYNAMIC RAM DESCRIPTION ADDRESS Refresh Row Add. Col Add. This is family of 4194304 - word by 64 - bit dynam ic RAM


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    PDF MH4V645/6445AXJJ-5 268435456-BIT 4194304-WQRD 64-BIT A0-A12 MH4V645AXJJ MH4V6445AXJJ A0-A11 MIT-DS-0085-1 26/Feb

    Untitled

    Abstract: No abstract text available
    Text: n u N EW PRODUCT HB56G51236CC Series 524,288-WordX 36-Bit High Density Dynamic RAM Card 0H IT A C H 1 Rev.2 Ju n . 30,1992 Description The HB56G51236CC is a 512KX36 dynam ic RA M Card, mounted 4 pieces of 4M bit D RA M HM 514900LTT sealed in T S O P package.


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    PDF HB56G51236CC 288-WordX 36-Bit 512KX36 514900LTT) 88-pin

    mitsubishi year code

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs KÄ-atr- MH8V7245BWZTJ -5, -6 HYPER PAGE MODE 603979776 - BIT 8388608 - WORD BY 72 - BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION The MH8V7245BWZTJ is 8388608-word x 72-bit dynamic ram module. This consist of nine industry standard 8M x 8


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    PDF MH8V7245BWZTJ 8388608-word 72-bit H8V7245BW MIT-DS-0287-0 mitsubishi year code