Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    J681 TRANSISTOR Search Results

    J681 TRANSISTOR Result Highlights (5)

    Part
    ECAD Model
    Manufacturer
    Description
    Download
    Buy
    DE6B3KJ681KN4AE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ681KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ681KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    J681 TRANSISTOR Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    transistor J681

    Abstract: J681 j681 transistor 2sj681
    Text: 2SJ681 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSIII 2SJ681 Relay Drive, DC−DC Converter and Motor Drive Applications １．５±０．２ Unit: mm ５．２±０．２ z 4-V gate drive １．６ z Low drain−source ON resistance: RDS (ON) = 0.12 Ω (typ.)


    Original     		2SJ681 transistor J681 J681 j681 transistor 2sj681 PDF

    j681 transistor

    Abstract: No abstract text available
    Text: 2SJ681 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSIII 2SJ681 Relay Drive, DC−DC Converter and Motor Drive Applications １．５±０．２ Unit: mm ５．２±０．２ z 4-V gate drive z Low drain−source ON resistance: RDS (ON) = 0.12 Ω (typ.)


    Original     		2SJ681 j681 transistor PDF

    transistor J681

    Abstract: 2SJ681 J681 j681 transistor tr j681
    Text: 2SJ681 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSIII 2SJ681 Relay Drive, DC−DC Converter and Motor Drive Applications 1.5 ± 0.2 Unit: mm 5.2 ± 0.2 z 4-V gate drive z Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.) z High forward transfer admittance: |Yfs| = 5.0 S (typ.)


    Original     		2SJ681 transistor J681 2SJ681 J681 j681 transistor tr j681 PDF

    J681

    Abstract: transistor J681 j681 transistor 2SJ681
    Text: 2SJ681 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSIII 2SJ681 Relay Drive, DC−DC Converter and Motor Drive Applications 1.5 ± 0.2 Unit: mm 6.5 ± 0.2 5.2 ± 0.2 0.6 MAX. z Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.)


    Original     		2SJ681 J681 transistor J681 j681 transistor 2SJ681 PDF

    transistor J681

    Abstract: 2sj681 J681 j681 transistor
    Text: 2SJ681 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type U−MOSIII 2SJ681 Relay Drive, DC−DC Converter and Motor Drive Applications 1.5 ± 0.2 Unit: mm 6.5 ± 0.2 5.2 ± 0.2 0.6 MAX. z Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.)


    Original     		2SJ681 transistor J681 2sj681 J681 j681 transistor PDF