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    J600 MOSFET Search Results

    J600 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

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    RTS5116

    Abstract: RTM865T-300 RC415MD new bright R288 rqw130 RQA180N03 stac9200x5 APL5912 RC415M 40gab
    Text: 5 4 3 INTEL YONAH CPU EXTERNAL CLOCK GEN. RTM865T-300 2 INDICATOR BOARD CON 24 2 1 PCI BUS Celeron M GNT#/REQ# INTR IDSEL C/D AD25 MINI PCI uFCPGA 479 Pin 4, 5 AGTL+ 533MHz 4X DATA 2X ADDRESS D D ATI NB - RC415MD VGA CON 15 CRT 15 LVDS LVDS CON AGTL+ YONAH CPU I/F


    Original     		RTM865T-300 533MHz RC415MD SB600/SB460 150Kohm 68Kohm 47Kohm 82Kohm RTS5116 RC415MD new bright R288 rqw130 RQA180N03 stac9200x5 APL5912 RC415M 40gab PDF