marking J6
Abstract: KRA739U
Text: SEMICONDUCTOR KRA739U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking J6 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark J6 KRA739U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
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KRA739U
marking J6
KRA739U
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KRA739E
Abstract: No abstract text available
Text: SEMICONDUCTOR KRA739E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking J6 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark J6 KRA739E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
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KRA739E
KRA739E
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j1 3003
Abstract: si3005
Text: LDWER ROW ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: P 2 - P 3 - P 1 : (J2- J1) (P 6 - P 5 - P 4 ) : (J6- J3) 2.0 INDUCTANCE: 3.0 LEAKAGE INDUCTANCE: 4.0 INTERWINDING CAPACITANCE: 5.0 DC RESISTANCE: (J6 - J3 ) ; (J2- J1) (P 6 - P 4 ) (P 3 - P 1 ) (J6 - J3 )
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350uH
100KHz,
CT720183
SI-30056
j1 3003
si3005
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C1384
Abstract: C1143
Text: ELECTRICAL SPECIFICATIONS 1.0 TURNS RATIO P 6 -P 8 -P 3 i ( J 6 - J 3 ) (P2 -P 7 -P 1 ) i (J2 -J1 ) 2.0 INDUCTANCE <P6-P3)=<J6-J3) (P2-P1) 3.0 LEAKAGE INDUCTANCE P 6 -P 3 (WITH J6 AND J3 SHDRT) P2-P1 (WITH J2 AND J1 SHDRT) 4.0 INTERWINDING CAPACITANCE <P6,P3) TD <J6,J3>
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200uH
1500VAC
C2159D
L94--VO
C1384
C1143
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Untitled
Abstract: No abstract text available
Text: 1CT : 1CT J1 TX+ J2 TX- J3 RX+ J4 J5 J6 RX- J7 J8 lOOOpF, 2 K V ELECTRICAL SPECIFICATIONS: NDTES 1.0 TURNS RATIO: P 4 - P 5 - P 6 : (J3 -J6 ) ( P 3 - P 2 - P 1 ) : (J1 -J2 ) 1CT : 1CT± 3% 1CT : 1CT ± 3% 1,0 PINS WITHDUT ELECTRICAL CONNECTION ARE OMITTED,
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350uH
100KHz,
125-C/90SECS.
230-C/90
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Untitled
Abstract: No abstract text available
Text: 1CT • 1CT J1 J2 J3 J4 J5 J6 J7 J8 TD+ TD- RCT TX+ TXRX+ RX- lOOOpF, 2 K V NDTEi 1, UNUSED PIN P7 IS DMITTED, ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: P 4 - P 5 - P 6 : (J 3 -J6 ) ( P 3 - P 2 - P 1 ) : (J 1 -J2 ) 1CT : 1CT± 3% 1CT : 1CT ± 3% 2.0
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350uH
100KHz
SI-50154
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Untitled
Abstract: No abstract text available
Text: ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: P 3 - P 5 - P 6 : (J 3 -J6 ) ( P 1 - P 4 - P 2 ) : (J 1 -J2 ) 1CT : 1CT± 3% 1CT : 1CT ± 3% 2.0 INDUCTANCE : 350uH MIN. @ 0.1V, 350uH MIN. @ 0.1V, 3.0 LEAKAGE INDUCTANCE: 4.0 INTERWINDING CAPACITANCE : (P6,P5,P3) TO (J6.J3)
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350uH
100KHz,
sI-40132
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43AF
Abstract: No abstract text available
Text: ELECTRICAL SPECIFICATIONS« 1.0 TURNS RATIO P 6 -P 8 -P 3 i (J 6 -J 3 ) <P2-P7-P1) « (J E -J D 2.0 INDUCTANCE <P6-P3>=<J6-J3) 1CT ! 1.4 ± 3 / 1.0 PINS WITHDUT ELECTRIAL CONNECTIONS ARE DMITTED, lOOuH MIN. @ 0.01V, lOKHz P6-P3 (WITH J6 AND J3 SHORT) 0.3uH MAX. @ 1MHz
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200uH
1500VAC
43AF
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Untitled
Abstract: No abstract text available
Text: 1CT ! 1CT J1 J2 J3 J4 J5 J6 J7 J8 TD+ TD - RCT TX+ TXRX+ RX- lOOOpF, 2 K V NDTEi 1, UNUSED PIN P7 IS DMITTED, ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: P 4 -P 5 -P 6 : (J3-J6) (P 3 -P 2 -P 1 ) : (J1-J2) 1CT : 1CT± 3% 1CT : 1CT ± 3% 2.0 INDUCTANCE:
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350uH
100KHz,
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Untitled
Abstract: No abstract text available
Text: 1CT • 1CT J1 J2 J3 J4 J5 J6 J7 J8 TD+ TD- RCT TX+ TXRX+ RX- lOOOpF, 2 K V NDTEi 1, UNUSED PIN P7 IS DMITTED, ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: P 4 - P 5 - P 6 : (J 3 -J6 ) ( P 3 - P 2 - P 1 ) : (J 1 -J2 ) 1CT : 1CT± 3% 1CT : 1CT ± 3% 2.0
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350uH
100KHz
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Untitled
Abstract: No abstract text available
Text: 1CT ! 1CT TD+ J1 TX+ TD- J2 T X J3 RX+ J4 J5 J6 R X J7 RCT J8 lOOOpF, 2 K V NDTEi 1, UNUSED PIN P7 IS DMITTED, ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO : P 4 - P 5 - P 6 : (J 3 -J6 ) ( P 3 - P 2 - P 1 ) : (J 1 -J2 ) 1CT : 1CT± 3% 1CT : 1CT ± 3% 2.0
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350uH
100KHz
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Untitled
Abstract: No abstract text available
Text: 1CT • 1CT J1 J2 J3 J4 J5 J6 J7 J8 TD+ TD- RCT TX+ TXRX+ RX- lOOOpF, 2 K V NDTEi 1, UNUSED PIN P7 IS DMITTED, ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: P 4 - P 5 - P 6 : (J 3 -J6 ) ( P 3 - P 2 - P 1 ) : (J 1 -J2 ) 1CT : 1CT± 3% 1CT : 1CT ± 3% 2.0
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350uH
100KHz
SusquehannI-50170
SI-50170
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TED CONNECTOR
Abstract: No abstract text available
Text: 1CT ! 1CT J1 J2 J3 J4 J5 J6 J7 J8 TD+ TD- RCT TX+ TXRX+ RX- lOOOpF, 2 K V NDTEi 1, UNUSED PIN P 7 IS DMITTED, ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO : P 4 - P 5 - P 6 : (J 3 -J6 ) ( P 3 - P 2 - P 1 ) : (J 1 -J2 ) 1CT : 1CT± 3% 1CT : 1CT ± 3% 2.0
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350uH
100KHz
125-C/90SECS.
230-C/90
TED CONNECTOR
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Untitled
Abstract: No abstract text available
Text: lOOOpF+gQX j 2 K V PINS 4&5 o NDTES ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: P 8 - P 6 - P 7 : (J6 - J3 ) (P 2 - P 3 - P 1 ) : (J2 - J1 ) 1CT : 1 ± 3% 1CT : 1 ± 3% 2.0 INDUCTANCE: 350uH MIN. @ 0.1V, 350uH MIN. @ 0.1V, 3.0 LEAKAGE INDUCTANCE: 4.0 INTERWINDING CAPACITANCE: (P8,P6,P7) TO (J6 .J3 )
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100KHz
350uH
C/90SECS.
SI-40031
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Untitled
Abstract: No abstract text available
Text: 1CT ! 1CT J1 J2 J3 J4 J5 J6 J7 J8 TD+ TD- RCT r d - P 6 CHASSIS G N d ( P 8 ) TX+ TXRX+ RX- lOOOpF, 2KV NDTEi 1, UNUSED PIN P 7 IS DMITTED, ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO : ( P 4 - P 5 - P 6 ) : (J 3 -J6 ) ( P 3 - P 2 - P 1 ) : (J 1 -J2 ) 1CT : 1CT± 3%
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350uH
100KHz
SI--5021
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Untitled
Abstract: No abstract text available
Text: 1CT ! 1CT TD+ J1 TX+ J2 T X J3 RX+ TD - J4 J5 J6 R X - RCT J7 J8 lOOOpF, 2 K V NDTEi 1, UNUSED PIN P7 IS DMITTED, ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: P 4 -P 5 -P 6 : (J3-J6) (P 3 -P 2 -P 1 ) : (J1-J2) 1CT : 1CT± 3% 1CT : 1CT ± 3% 2.0 INDUCTANCE:
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350uH
100KHz
SI-50171
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Untitled
Abstract: No abstract text available
Text: CHASSIS GND ELECTRICAL SPECIFICATIONS: 10OOpF, 4KV 1.0 TURNS RATIO: P 8 - P 7 - P 6 : (J 3 -J6 ) ( P 5 - P 4 - P 3 ) : (J 1 -J2 ) 1CT : 1CT ± 3% 1CT : 1CT ± 3% 2.0 INDUCTANCE : 350uH MIN. @ 0.1V, 350uH MIN. @ 0.1V, 3.0 LEAKAGE INDUCTANCE: 4.0 INTERWINDING CAPACITANCE: (P8,P7,P6) TO (J6.J3)
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10OOpF,
30MHz
80MHz
100MHz
112nS
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SI-60062-F
Abstract: SI-60062-F STEWART CONNECTOR
Text: lOOOpFj 2K V ELECTRICAL SPECIFICATIONS: NDTES 1.0 TURNS RATIO: P 6 - P 5 - P 4 : (J6 -J3 ) ( P 3 - P 2 - P 1 ) : (J2 -J1 ) 1CT : 1CT± 3% 1CT : 1CT ± 3% 2.0 INDUCTANCE: 350uH MIN. @ 0.1V, 350uH MIN. @ 0.1V, 3.0 LEAKAGE INDUCTANCE: 4.0 INTERWINDING CAPACITANCE: (P6,P5,P4) TO (J6.J3)
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350uH
100KHz,
SI-60062-F
SI-60062-F STEWART CONNECTOR
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k 523
Abstract: RT-128 RT128
Text: 1CT • 1CT J1 J2 J3 J4 J5 J6 J7 J8 TD+ TD- RCT TX+ TXRX+ RX- lOOOpF, 2 K V NDTEi 1, UNUSED PIN P7 IS DMITTED, ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: P4-P5-P6 : (J3-J6) (P3-P2-P1) : (J1-J2) 1CT : 1CT± 3% 1CT : 1CT ± 3% 2.0 INDUCTANCE: 350uH MIN. @ 0.1V,
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350uH
100KHz,
125-C/90SECS.
k 523
RT-128
RT128
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SL-60
Abstract: j550
Text: lOOOpFj 2K V ELECTRICAL SPECIFICATIONS: NDTES 1.0 TURNS RATIO: P 6 - P 5 - P 4 : (J6 -J3 ) ( P 3 - P 2 - P 1 ) : (J2 -J1 ) 1CT : 1CT± 3% 1CT : 1CT ± 3% 2.0 INDUCTANCE: 350uH MIN. @ 0.1V, 350uH MIN. @ 0.1V, 3.0 LEAKAGE INDUCTANCE: 4.0 INTERWINDING CAPACITANCE: (P6,P5,P4) TO (J6.J3)
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350uH
100KHz,
SL-60
j550
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40173
Abstract: of I 4017 n CI 4017
Text: lOOOpF , 2 K V ELECTRICAL SPECIFICATIONS: NDTES 1,0 TURNS RATID P6-P5-P4 i (J6-J3) (P3-P2-P1) i (J2-J1) 2,0 INDUCTANCE CJ3-J6) 1.0 PIN S WITHDUT ELECT RICA L CDNNECTIDN ARE DMITTED, i 1.41CT I 1CT± 3 / I 1CT • 1CT ± 3 / i 350uH MIN, 8 0.1V , lOOKHz, 8nA DC Bias
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350uH
CT720035X1/24-001701
40173
of I 4017 n
CI 4017
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J550
Abstract: No abstract text available
Text: lOOOpFj 2K V ELECTRICAL SPECIFICATIONS: NDTES 1.0 TURNS RATIO: P 6 - P 5 - P 4 : (J6 -J3 ) ( P 3 - P 2 - P 1 ) : (J2 -J1 ) 1CT : 1CT± 3% 1CT : 1CT ± 3% 2.0 INDUCTANCE: 350uH MIN. @ 0.1V, 350uH MIN. @ 0.1V, 3.0 LEAKAGE INDUCTANCE: 4.0 INTERWINDING CAPACITANCE: (P6,P5,P4) TO (J6.J3)
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350uH
100KHz,
J550
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SI-60062-F STEWART CONNECTOR
Abstract: No abstract text available
Text: lOOOpFj 2 K V ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: P 6 - P 5 - P 4 : (J6 -J3 ) ( P 3 - P 2 - P 1 ) : (J2 -J1 ) 1CT : 1CT± 3% 1CT : 1CT ± 3% 2.0 INDUCTANCE: 350uH MIN. @ 0.1V, 350uH MIN. @ 0.1V, 3.0 LEAKAGE INDUCTANCE: 4.0 INTERWINDING CAPACITANCE: (P6,P5,P4) TO (J6.J3)
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350uH
100KHz
--60062--F
SI-60062-F STEWART CONNECTOR
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Untitled
Abstract: No abstract text available
Text: lOOOpFj £KV ELECTRICAL SPECIFICATIONS: N OT ES 1.0 TURNS RATIO: P 3 - P 5 - P 6 : (J 3 -J6 ) ( P 1 - P 4 - P 2 ) : (J 1 -J2 ) 1CT : 1CT± 3% 1CT : 1CT ± 3% 2.0 INDUCTANCE : 350uH MIN. 0.1V, 350uH MIN. @ 0.1V, 3.0 LEAKAGE INDUCTANCE: 4.0 INTERWINDING CAPACITANCE : (P6.P5.P3) TO (J6.J3)
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350uH
100KHz
SI-401
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