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    J4A DIODE Search Results

    J4A DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    J4A DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diode J4S

    Abstract: j4a diode ZC831 832A J5B SOT23 j4s diode ZC834A DIODE j5s ZC830A ZC831A
    Text: ZC830/A/B to ZC836/A/B SOT23 SILICON VARIABLE CAPACITANCE DIODES ISSUE 5 – JANUARY 1998 1 FEATURES * Close Tolerance C-V Characteristics * High Tuning Ratio * Low IR Enabling Excellent Phase Noise Performance IR Typically <200pA at 25V 2 1 3 3 SOT23 ABSOLUTE MAXIMUM RATINGS.


    Original     		PDF ZC830/A/B ZC836/A/B 200pA ZC830) ZC830B) ZC830 ZC830A ZC830B diode J4S j4a diode ZC831 832A J5B SOT23 j4s diode ZC834A DIODE j5s ZC830A ZC831A

    MV209 diode

    Abstract: No abstract text available
    Text: Silicon Epicap Diode MMBV109LT1 MBV109T1 MV209 Designed for general frequency control and tuning applications; providing solid–state reliability in replacement of mechanical tuning methods. • High Q with Guaranteed Minimum Values at VHF Frequencies • Controlled and Uniform Tuning Ratio


    Original     		PDF MMBV109LT1 MBV109T1 MV209 236AB) MV209 diode

    j4a diode

    Abstract: ZC830B ZC830 ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A ZC836A
    Text: ZC830/A/B to ZC836/A/B SOT23 SILICON VARIABLE CAPACITANCE DIODES ISSUE 5 – JANUARY 1998 1 FEATURES * Close Tolerance C-V Characteristics * High Tuning Ratio * Low IR Enabling Excellent Phase Noise Performance IR Typically <200pA at 25V 2 1 3 3 SOT23 ABSOLUTE MAXIMUM RATINGS.


    Original     		PDF ZC830/A/B ZC836/A/B 200pA ZC830) ZC830B) ZC830 ZC830A ZC830B j4a diode ZC830B ZC830 ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A ZC836A

    j4a diode

    Abstract: No abstract text available
    Text: SOT23 SILICON VARIABLE CAPACITANCE DIODE ZC829A ISSUE 3 – JANUARY 1998 FEATURES * VHF to UHF operation * Low IR * Enabling Excellent Phase Noise Performance * IR Typically <200pA at 25V APPLICATIONS * Mobile radios and Pagers * Cellular telephones * Voltage controlled Crystal Oscillators


    Original     		PDF 200pA ZC829A ZC829A ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A j4a diode

    MV209 diode

    Abstract: DIODE M4A MV209 MV209 equivalent MBV109T1 MMBV109 MMBV109L MMBV109LT1 j4a diode MV-209
    Text: LESHAN RADIO COMPANY, LTD. Silicon Epicap Diode MMBV109LT1 MBV109T1 MV209 Designed for general frequency control and tuning applications; providing solid–state reliability in replacement of mechanical tuning methods. • High Q with Guaranteed Minimum Values at VHF Frequencies


    Original     		PDF MMBV109LT1 MBV109T1 MV209 236AB) MV20930 MBV109. MMBV109* MV209* MV209 diode DIODE M4A MV209 MV209 equivalent MBV109T1 MMBV109 MMBV109L MMBV109LT1 j4a diode MV-209

    ZC829ATA

    Abstract: No abstract text available
    Text: ZC829, ZMV829 series ZV831, ZDC833 series SILICON 28V HYPERABRUPT VARACTOR DIODES Device Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase noise performance. Available in


    Original     		PDF ZC829, ZMV829 ZV831, ZDC833 200pA) ZC829ATA

    829B

    Abstract: marking j5a 832B ZC836BTA ON code 829B ZV931 ZC930 MARKING CF sot23 ZC829ATA marking j3a
    Text: 830 series SILICON 28V HYPERABRUPT VARACTOR DIODES ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series Device Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase noise


    Original     		PDF ZC829, ZDC833, ZMV829, ZMDC830, ZV831 200pA) 829B marking j5a 832B ZC836BTA ON code 829B ZV931 ZC930 MARKING CF sot23 ZC829ATA marking j3a

    UM10468

    Abstract: J3A NXP
    Text: UM10468 SSL2108X buck evaluation board Rev. 1 — 30 August 2011 User manual Document information Info Content Keywords SSL2108X, Buck, down converter, AC/DC converter, retrofit SSL, LED driver, LED retrofit lamp, non-dimmable Abstract The SSL2108X is a range of high-voltage Integrated Circuits ICs ,


    Original     		PDF UM10468 SSL2108X SSL2108X, SSL21081, SSL21082, SSL21083 SSL21084 UM10468 J3A NXP

    sot23 mark code CB

    Abstract: sot23 mark code AE ZMDC830 marking j5a sod-23 ZMV829 mark B1 sot23 ZC829ATA ZV931 MARK E1 SOT23-5
    Text: 830 series Silicon 25V hyperabrupt varactor diodes ZC829, ZDC833, ZMV829, ZMDC830 and ZV831 Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase


    Original     		PDF ZC829, ZDC833, ZMV829, ZMDC830 ZV831 OT323 OD523 OD323 200pA) sot23 mark code CB sot23 mark code AE marking j5a sod-23 ZMV829 mark B1 sot23 ZC829ATA ZV931 MARK E1 SOT23-5

    sot23 mark code AE

    Abstract: ZDC833 ZC835BTA ZC836BTA 829B ZC829ATA
    Text: ZC829, ZMV829 series ZV831, ZDC833 series SILICON 28V HYPERABRUPT VARACTOR DIODES Device Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase noise


    Original     		PDF ZC829, ZMV829 ZV831, ZDC833 200pA) sot23 mark code AE ZC835BTA ZC836BTA 829B ZC829ATA

    ON code 829B

    Abstract: sot23 mark code CB 829B 832B ZMDC830 ZMV835BTA sot23 mark code AE marking j3a marking j5a ZV931
    Text: 830 SERIES SILICON 25V HYPERABRUPT VARACTOR DIODES ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series Device description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low


    Original     		PDF ZC829, ZDC833, ZMV829, ZMDC830, ZV831 OT323 OD523 OD323 200pA) ON code 829B sot23 mark code CB 829B 832B ZMDC830 ZMV835BTA sot23 mark code AE marking j3a marking j5a ZV931

    ZV930

    Abstract: 831B 829B sot23 mark code AE sot23 mark code CB marking j5a ZMDC830 ON code 829B ZC930 ZV931
    Text: 830 SERIES SILICON 28V HYPERABRUPT VARACTOR DIODES ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series Device Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low


    Original     		PDF ZC829, ZDC833, ZMV829, ZMDC830, ZV831 OT323 OD523 OD323 200pA) ZV930 831B 829B sot23 mark code AE sot23 mark code CB marking j5a ZMDC830 ON code 829B ZC930 ZV931

    c2a marking

    Abstract: mark B1 sot23 829B 831B ZC832ATA ZC829ATA ZC930 ZV931
    Text: 830 SERIES SILICON 25V HYPERABRUPT VARACTOR DIODES ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series Device description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low


    Original     		PDF ZC829, ZDC833, ZMV829, ZMDC830, ZV831 200pA) OT323 OD523 OD323 c2a marking mark B1 sot23 829B 831B ZC832ATA ZC829ATA ZC930 ZV931

    2W ZENER DIODE

    Abstract: 48V 2w zener diode RELAY RZ2 zener 48v 5w SQP500JB 3 watt 63v zener diode bridge rectifier j7 dz1 ZENER DIODE pcb mounted transformer 400v ZENER PANASONIC
    Text: Bill of Materials for Amplifier Module Power Supply 6/19/2008 Assembly Notes: - Bottom side components should be mounted before top side. RIR1 - RIR3 should not be mounted against PCB. An air gap should be between PCB and component. RBLD1 - RBLD4 should not be mounted against PCB. An air gap should be between PCB and


    Original     		PDF ECQ-E4103KF SR211C104KAR ECQ-E2104KF DCMC203U100BC2B ECQ-E1105KF 200mm 156mil 100mil 300VA 2W ZENER DIODE 48V 2w zener diode RELAY RZ2 zener 48v 5w SQP500JB 3 watt 63v zener diode bridge rectifier j7 dz1 ZENER DIODE pcb mounted transformer 400v ZENER PANASONIC

    20-PIN

    Abstract: MAX5013 MAX5013AEPI MAX5013EVKIT
    Text: 19-1285; Rev 0; 7/97 MAX5013 Evaluation Kit _Applications _Features ♦ Up to 100Msps Conversion Rate ♦ Selectable Clock Control for Updating Data ♦ Reference Voltage: Internal, On-Board, or External ♦ Selected High-Speed Test Points


    Original     		PDF MAX5013 100Msps MAX5013EVKIT MAX5013 20-PIN MAX5013AEPI MAX5013EVKIT

    zener 5.1

    Abstract: 20-PIN MAX5013 MAX5013AEPI MAX5013EVKIT
    Text: 19-1272; Rev 0a; 8/97 MAX5013 Evaluation Kit Applications Engineering Prototype Aid Incoming Inspection Tool Features ♦ Up to 100Msps Conversion Rate ♦ Selectable Clock Control for Updating Data ♦ Reference Voltage: Internal, On-Board, or External ♦ Selected High-Speed Test Points


    Original     		PDF MAX5013 100Msps MAX5013EVKIT 12-turns MAX5013 zener 5.1 20-PIN MAX5013AEPI MAX5013EVKIT

    zc840

    Abstract: ZC830 ZC830A ZC830B ZC831A ZC832A ZC833A ZC834A ZC835A ZC836A
    Text: SOT23 'f r HYPERABRUPT TUNER DIODES Pinout : 1-Cathode, 3-Anode N om inal Capacitance at Vr=2V, f=1MHz Reverse Breakdown Voltage Type Capacitance Ratio at f=1MHz C2/C2o Ctot Q at V r =3V f=50MHz Device Code VR V M in pF Typ pF Max pF Min Max Typ ZC830A 25


    OCR Scan     		PDF c2/c20 50MHz ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A ZC836A ZC830) zc840 ZC830 ZC830B

    MV209 diode

    Abstract: marking T02 sot-23
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBV109T1 MMBV109LT1* MV209* Silicon Epicap Diodes D esigned for general frequency control and tuning applications; providing solid-state reliability in replacement of mechriaical tuning methods. * Motorola Preferred Devices


    OCR Scan     		PDF MBV109T1 MMBV109LT1* MV209* /SOT-323 OT-23 SC-70/SOT-323 MMBV109LT1/P) MMBV109LT1 MV209 MV209 diode marking T02 sot-23

    Untitled

    Abstract: No abstract text available
    Text: SOT23 SILICON VARIABLE CAPACITANCE DIODES ZC830/A/B to ZC836/A/B ISSUE 4 -JU N E 1996_ I FEATURES * Close Tolerance C-V Characteristics * High Tuning Ratio * Low lR Enabling Excellent Phase Noise Performance lRTypically <200pA at 25V .T ABSOLUTE MAXIMUM RATINGS.


    OCR Scan     		PDF ZC830/A/B ZC836/A/B 200pA ZC836A ZC830) ZC830B) ZC830 ZC830A

    diode J4S

    Abstract: ZC831 ZC834A ZC832A
    Text: SOT23 SILICON VARIABLE CAPACITANCE DIODES ISSUE 4-JU N E 1996 L . ZC830/A/B to -?Q836/ A/B FEATURES * Close Tolerance C-V Characteristics * High Tuning Ratio * Low iR Enabling Excellent Phase Noise Performance lR T ypically <200pA at 25V ABSOLUTE MAXIMUM RATINGS.


    OCR Scan     		PDF 200pA ZC830/A/B 50MHz ZC830) ZC830B) ZC830/A/B ZC836/A/B ZC830 ZC831 ZC832 diode J4S ZC834A ZC832A

    ZC830B

    Abstract: zc840 ZC830 ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A ZC836A
    Text: SOT23 #• HYPERABRUPT TUNER DIODES Pinout : 1-Cathode, 3-Anode N om inal Capacitance at V r = 2 V , f=1MHz Reverse Breakdown Voltage Type Capacitance Ratio at f=1MHz C2/C2o Ctot Q at V r =3V f=50MHz Device Code VR V M in Typ pF Max pF Min Max Typ pF 25 9.0


    OCR Scan     		PDF c2/c20 50MHz ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A ZC836A ZC830) ZC830B zc840 ZC830

    DIODE M4A

    Abstract: j4a diode C25F
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBV109T1 MMBV109LT1* MV209* Silicon Epicap Diodes D esign ed for general frequency control and tuning applications; providing solid-state reliability in replacement of mechnaical tuning methods. * Motorola Preferrod Devices


    OCR Scan     		PDF MBV109T1 MMBV109LT1* MV209* SC-70/SOT-323 OT-23 DIODE M4A j4a diode C25F

    Untitled

    Abstract: No abstract text available
    Text: ZC830/A/B SOT23 SILICON VARIABLE CAPACITANCE DIODES to ZC836/A/B r ISSUE 5 - JANUARY 1998 FE A T U R E S * Close Tolerance C-V Characteristics * High Tuning Ratio * Low lR Enabling Excellent Phase Noise Performance lR Typ ically <200pA at 25V 1 * 3 1 SOT23


    OCR Scan     		PDF 200pA ZC830/A/B ZC836/A/B brZC830A ZC831A ZC832A ZC833A ZC834A ZC835A ZC836A

    ZC930

    Abstract: No abstract text available
    Text: SOT23 HYPERABRUPT TUNER DIODES Pinout : 1-Cathode, 3-Anode Nom inal Capacitance at VR=2V, f=1MHz Ctot Reverse Breakdown Voltage Type Vr V Min pF Typ pF Capacitance Ratio at f=1MHz C2/C20 Max pF Q at V r =3V f=50MHz Min Max Typ Device Code ZC830A 25 9.0 10.0


    OCR Scan     		PDF ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A ZC836A C2/C20 50MHz ZC830) ZC930