Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M M 3Z2V4T1/D SEMICONDUCTOR TECHNICAL DATA M M 3Z2V4T1 SE RIES 200 mW SOD323 Zener Voltage Regulator Diodes GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP Zener Voltage Regulator Diodes o-j4 — - O
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OD323
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TTL 7474
Abstract: TTL 7475 7475 ttl datasheet ttl 7474 7474 ttl MVS Series ttl 7474 data sheet 4S3065 4S3066 4S3067
Text: VS M PRODUCT FEATURE 4S3060 SERIES "SMA" FEMALE FIELD REPLACEABLE SP4T SWITCHES 1.25 OPTIONAL MOUNTING PLATE WITH .104 DIA THRU HOLES (4 PL.) 1.050 ( 2 - 18 GHz ) .10 .10 • Reduced Harmonics • Integral TTL Drivers .018 DIA 7 PLACES J4 .62 • Miniature Size
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4S3060
4S3068
4S3065
4S3066
4S3067
4S3060
4S3068-MP
TTL 7474
TTL 7475
7475 ttl
datasheet ttl 7474
7474 ttl
MVS Series
ttl 7474 data sheet
4S3065
4S3066
4S3067
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4S3068-MP
Abstract: 4S3065 4S3066 4S3067 4S3068
Text: VS M PRODUCT FEATURE 4S3060 SERIES "SMA" FEMALE FIELD REPLACEABLE SP4T SWITCHES 1.25 OPTIONAL MOUNTING PLATE WITH .104 DIA THRU HOLES (4 PL.) 1.050 ( 2 - 18 GHz ) .10 .10 • Reduced Harmonics • Integral TTL Drivers .018 DIA 7 PLACES J4 .62 • Miniature Size
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4S3060
4S3068
4S3065
4S3066
4S3067
4S3060
4S3068-MP
4S3068-MP
4S3065
4S3066
4S3067
4S3068
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Untitled
Abstract: No abstract text available
Text: SWITCH WITH COUPLERS AND CIRCULATOR - CUSTOM CAPABILITY SUBASSEMBLY MODEL SW-F88S 2.7-3.0 GHz ELECTRICAL SPECIFICATION Frequency: 2.7-3.0 GHz Insertion Loss: 2.5 dB maximum for J2 to J5, J3 to J5 & J4 to J5 Gain: +9 dB minimum to +13.5 dB maximum for J1 to J5
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SW-F88S
100mA)
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PDF
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J4 diode
Abstract: J1 diode diode 1-35 j2 J3 diode
Text: SWITCH WITH COUPLERS & CIRCULATOR-CUSTOM CAPABILITY SUBASSEMBLY MODEL SW-F88S 2.7–3.0 GHz ELECTRICAL SPECIFICATION Frequency: 2.7–3.0 GHz Insertion Loss: 2.5 dB maximum for J2 to J5, J3 to J5 & J4 to J5 Gain: +9 dB minimum to +13.5 dB maximum for J1 to J5
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100mA)
SW-F88S
J4 diode
J1 diode
diode 1-35 j2
J3 diode
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GRM31CR71H475KA12L
Abstract: MURATA GRM188R71C104KA01D GRM188R71C104KA01D C3216X7R1H475K MIC2601 VJ0603Y104KXAA GRM21BR71C225KA12L B360A
Text: MIC2601/2 Evaluation Board 1.2MHz/2MHz PWM DC/DC Boost Switching Regulator General Description 2. Connect the load to the VOUT J4 and ground (J5) terminals. The load can be either passive (resistor) or active (electronic load). An ammeter can be placed between the load and the VOUT
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MIC2601/2
M9999-092308-C
GRM31CR71H475KA12L
MURATA GRM188R71C104KA01D
GRM188R71C104KA01D
C3216X7R1H475K
MIC2601
VJ0603Y104KXAA
GRM21BR71C225KA12L
B360A
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HP 450 opto coupler
Abstract: rop 101 ap 4506 A 4506 igbt
Text: ¥ h o \ HEW LETT mLEM P A C K A R D Intelligent Power Module and Gate Drive Interface Optocouplers HCPL-4506 h c p l-j4 5 6 HCPL-0466 HCNW 4506 Technical Data F eatu res • Performance Specified for Common IPM Applications over Industrial Temperature Range: -40°C to 100°C
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HCPL-4506
HCPL-0466
HCPL-4506/0466
HCPLJ456
HCNW4506
HCNW4506)
VDE0884
HP 450 opto coupler
rop 101
ap 4506
A 4506 igbt
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SP8T
Abstract: TTL 7474 TTL 7475 8S3223 sp8t rf switch
Text: VS M PRODUCT FEATURE 8S3223 SP8T SWITCH 2.550 with REMOVABLE SMA CONNECTORS Broad Band 2-18 GHz Fast Switching Small Package -55°C to +125°C Operation J6 J5 J7 J4 VS M J3 J2 8S3223 1.300 1.50 J8 J1 +5V J0 GND E1 E3 E2 SN xxx date -5V • • • • TRUTH TABLE
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8S3223
8S3223
SP8T
TTL 7474
TTL 7475
sp8t rf switch
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DIODE C18 ph
Abstract: EMERSON rectifier C18 ph diode RESISTOR ROHM R20 smd diode s6 43a digi-key resistor 33 ohm 10w 0.1uF Capacitor Ceramic schottkey DIODE c19 IRLML6401TRPBF
Text: SD307 Bill of Materials Reference Designator C1, C2 C3, C4, C5, C6, C10, C11, C14, C24, C26, C28 C7, C25, C27, C29 C8, C30, C31 C9 C12 C13, C15, C20, C21, C22, C23 C16, C17 C18, C19 D1, D2, D3, D4, D5, D6, D7, D8, D9, D10, D11 D13 D14 J1, J2 J3, J4, J5, J6
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SD307
WM17116TR-ND
111-0702-001-ND
111-0703-001-ND
A26580
A26576-ND
490-1134-1-ND
IRLML6401PBFCT-ND
RHM75
541-750LCT-ND
DIODE C18 ph
EMERSON rectifier
C18 ph diode
RESISTOR ROHM R20
smd diode s6 43a
digi-key
resistor 33 ohm 10w
0.1uF Capacitor Ceramic
schottkey DIODE c19
IRLML6401TRPBF
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SP8T
Abstract: 8S3223 sp8t rf switch Microwave PIN diode
Text: VS M PRODUCT FEATURE 8S3223 SP8T SWITCH 2.550 with REMOVABLE SMA CONNECTORS Broad Band 2-18 GHz Fast Switching Small Package -55°C to +125°C Operation J6 J5 J7 J4 J3 J2 VS M 8S3223 1.300 1.50 J8 J1 +5V J0 GND E1 E3 E2 SN xxx date -5V • • • • TRUTH TABLE
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8S3223
8S3223
SP8T
sp8t rf switch
Microwave PIN diode
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HCNW4506
Abstract: No abstract text available
Text: Thpt H E W L E T T mL/ÍM P A C K A R D Intelligent Power Module and Gate Drive Interface Optocouplers HCPL-4506 h c p l-j4 5 6 HCPL-0466 HCNW4506 Technical Data Features • Performance Specified for Common IPM Applications over Industrial Temperature Range: -40°C to 100°C
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HCPL-4506
HCPL-0466
HCNW4506
HCPL-4506/0466
HCPL-J456
HCPL-4506
HCNW4506
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Untitled
Abstract: No abstract text available
Text: S U S É t - '/ W * Surface Mounting Device V 3 7 h # / * U Schottky Barrier Diode ^ — K "J4>W Twin Diode IW fÎT H ÎE I DF20PC3M O U T L IN E D IM E N S IO N S Case : STO-220 30V 20A •S M D • î81ê V f=0.4V • ;W x U - æ m & K ± • D C Ü * 0 R ffl
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DF20PC3M
STO-220
50HzlF
0G032Ã
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mc68hc16z1cfc16
Abstract: 10K SIP Resistor IC3 7805 regulator
Text: 19-1322; Rev 0; 12/97 68HC16 Module DESIGNATION C1, C2, C3 QTY 3 C4, C5 2 C6, C7 C8 C9 C10–C14 D1 J1 J2 2 1 5 1 1 1 J3 1 J4 JU1 JU2 JU3 JU4 JU5 L1 L2 LED1 R1 1 1 DESCRIPTION 1µF ceramic capacitors 22µF, 25V radial-lead electrolytic capacitors 22pF capacitors
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68HC16
1N4001
40-pin
16MODULE-DIP
mc68hc16z1cfc16
10K SIP Resistor
IC3 7805 regulator
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Untitled
Abstract: No abstract text available
Text: ' ’W • ' ' '' SMOKE D ETEC TO R W IT H IN TE RC O N N E C T NO CONNECT. | I/O 2 LOW -VSET 3 NO CONNECT. 4 LED + SUPPLY 16 1 GUARD2 NC LOGIC NC OSC. & TIMING 5 6 I V DD HORN DRIVER TT| DETECT. IN J4~1 G UARD t ~13~| SENSITIVITY SET J 2~l OSC. CAP. T n HORN 2
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PC-004-1
A5354CA
0S0433fl
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Untitled
Abstract: No abstract text available
Text: MA4AGSW5 SP5T AlGaAs PIN Diode Switch Rev. V5 FEATURES • Ultra Broad Bandwidth : 50 MHz to 50 GHz Functional Bandwidth : 50 MHz to 70 GHz 1.7dB Insertion Loss at 50 GHZ 35 dB Isolation at 50 GHz Low Current consumption. -10mA for low loss state
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-10mA
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Untitled
Abstract: No abstract text available
Text: ElectroMechanical Switches TRANSFER SWITCHES DC-18 GHz XSEM323 Series XSEM329 Series • 5 M odels from Stock • Standard Features Include: Normally Open and Latching Models TTL Logic Control, Suppression Diodes • Indicator Circuits Provided With All M odels
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DC-18
XSEM323
XSEM329
323LD
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MA4SW510
Abstract: PIN Diode Switch for frequencies up to 10 GHz
Text: MA4SW510 SP5T PIN Diode Reflective Switch MA4SW510 Layout Features n n n V 1.00 Ultra Broad Bandwidth: 50 MHz to 26 GHz 1.0 dB Insertion Loss, 30 dB Isolation at 20 GHz Reliable. Fully Monolithic, Glass Encapsulated Construction Description The MA4SW510 is a SP5T Series-Shunt broad band switch
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MA4SW510
MA4SW510
PIN Diode Switch for frequencies up to 10 GHz
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Untitled
Abstract: No abstract text available
Text: TRANSFER SWITCHES DC-18 GHz XSEM323 Series XSEM329 Series • 5 M odels from Stock • Standard Features Include: Normally Open and Latching Models TTL Logic Control, Suppression Diodes • Indicator Circuits Provided W ith All M odels DC-18 GHz F R E Q U E N C Y
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DC-18
XSEM323
XSEM329
323LD
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PDF
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SP5T
Abstract: C-150 MASW-005100-1194 Microwave PIN diode j6 diode
Text: Monolithic PIN SP5T Diode Switch MASW-005100-1194 Rev 1 FEATURES • • • • • • Ultra Broad Bandwidth: 50MHz to 26GHz 1.0 dB Insertion Loss 30 dB Isolation at 20GHz Reliable. Fully Monolithic Glass Encapsulated Construction DESCRIPTION The MASW-005100-1194 is a SP5T Series-Shunt
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MASW-005100-1194
50MHz
26GHz
20GHz
MASW-005100-1194
MASW-005100-11940W
SP5T
C-150
Microwave PIN diode
j6 diode
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Untitled
Abstract: No abstract text available
Text: S4V1 Pin Diode Switch Single Pole, Four Throw Absorptive Features: • Incorporated TTL-compatible driver for convenient system integration and operates from +5V and -15V DC power supplies. • DC blocks at all RF ports. • Ruggedized construction. • RoHS-compliant versions available.
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Untitled
Abstract: No abstract text available
Text: S4S2 Pin Diode Switch Single Pole, Four Throw Absorptive Features: • Incorporated TTL-compatible driver for convenient system integration and operates from +5V and -15V DC power supplies. • DC blocks at all RF ports. • Ruggedized construction. • RoHS-compliant versions available.
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Untitled
Abstract: No abstract text available
Text: S4V4 Pin Diode Switch Single Pole, Four Throw Absorptive Features: • Incorporated TTL-compatible driver for convenient system integration and operates from +5V and -15V DC power supplies. • DC blocks at all RF ports. • Ruggedized construction. • RoHS-compliant versions available.
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Untitled
Abstract: No abstract text available
Text: S4C2 Pin Diode Switch Single Pole, Four Throw Absorptive Features: • Incorporated TTL-compatible driver for convenient system integration and operates from +5V and -15V DC power supplies. • DC blocks at all RF ports. • Ruggedized construction. • RoHS-compliant versions available.
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Untitled
Abstract: No abstract text available
Text: S4C5 Pin Diode Switch Single Pole, Four Throw Absorptive Features: • Incorporated TTL-compatible driver for convenient system integration and operates from +5V and -15V DC power supplies. • DC blocks at all RF ports. • Ruggedized construction. • RoHS-compliant versions available.
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