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    J310 EQUIVALENT Search Results

    J310 EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    J310 EQUIVALENT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    j310 replacement

    Abstract: J310 equivalent j310 Siliconix J310 J310 applications j310 jfet to92 J310 -TO92 J310 jfet
    Text: J310 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J310 The J310 is a high frequency n-channel JFET offering a wide range and low noise performance. The TO-92 package is well suited for cost sensitive applications and mass production. See Packaging Information .


    Original     		100dB 350mW j310 replacement J310 equivalent j310 Siliconix J310 J310 applications j310 jfet to92 J310 -TO92 J310 jfet PDF

    J310 applications

    Abstract: J308 J309 J310 SST308 SST309 SST310 U309 U310 u308
    Text: J/SST/U308 Series Vishay Siliconix N-Channel JFETs J308 SST308 U309 J309 SST309 U310 J310 SST310 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J308 –1 to –6.5 J309 –1 to –4 –25 8 12 –25 10 J310 12 –2 to –6.5


    Original     		J/SST/U308 SST308 SST309 SST310 S-04028--Rev. 04-Jun-01 J310 applications J308 J309 J310 SST308 SST309 SST310 U309 U310 u308 PDF

    6u sot-23

    Abstract: j310 equivalent 1175 yig oscillator J309 application note rf transistor mark code H1 CBVK741B019 F63TNR J309 J310 MMBFJ309
    Text: J309 / J310 / MMBFJ309 / MMBFJ310 MMBFJ309 MMBFJ310 J309 J310 G S G S TO-92 SOT-23 D D Mark: 6U / 6T NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and


    Original     		MMBFJ309 MMBFJ310 MMBFJ309 OT-23 6u sot-23 j310 equivalent 1175 yig oscillator J309 application note rf transistor mark code H1 CBVK741B019 F63TNR J309 J310 PDF

    C917

    Abstract: U309 4239A AN104 J308 J309 J310 SST308 SST309 SST310
    Text: J/SST/U308 Series Siliconix NĆChannel JFETs J308 J309 J310 Product Summary SST308 SST309 SST310 U309 U310 Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J308 -1 to -6.5 -25 8 12 J309 -1 to -4 -25 10 12 J310 -2 to -6.5 -25 8 24 SST308


    Original     		J/SST/U308 SST308 SST309 SST310 AN104, P-37514--Rev. C917 U309 4239A AN104 J308 J309 J310 SST308 SST309 SST310 PDF

    J310

    Abstract: J309 application note J308 J310 applications J309 MCD212 MCD221 VHF Transistors
    Text: DISCRETE SEMICONDUCTORS DATA SHEET J308; J309; J310 N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon field-effect transistors


    Original     		PDF

    J310

    Abstract: J309 J310 Application Note Transistor J310 J308 j310 equivalent MCD217 MCD212 MCD221
    Text: DISCRETE SEMICONDUCTORS DATA SHEET J308; J309; J310 N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon field-effect transistors


    Original     		PDF

    LSJ310

    Abstract: Siliconix J310
    Text: LSJ310 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J310 The LSJ310 is a high frequency n-channel JFET offering a wide range and low noise performance. The TO-92 package is well suited for cost sensitive applications and mass production. See Packaging Information .


    Original     		LSJ310 100dB 350mW Siliconix J310 PDF

    vk200 choke

    Abstract: J310 jfet J309 J308 MVM010W j310 U-310 U310 J310 equivalent variable trimmer
    Text: ON Semiconductort J308 J309 J310 JFET VHF/UHF Amplifiers N–Channel — Depletion ON Semiconductor Preferred Devices MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc Forward Gate Current IGF 10 mAdc


    Original     		226AA) r14525 J308/D vk200 choke J310 jfet J309 J308 MVM010W j310 U-310 U310 J310 equivalent variable trimmer PDF

    motorola U310

    Abstract: Motorola J310 motorola 539 U310 motorola Allen-Bradley 100-k motorola 2443 VK200 rfc vk200 rfc with 6 turns J309 J310 jfet
    Text: MOTOROLA Order this document by J308/D SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifiers J308 N–Channel — Depletion J309 1 DRAIN J310 3 GATE Motorola Preferred Devices 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25


    Original     		J308/D 226AA) DeviceJ308/D motorola U310 Motorola J310 motorola 539 U310 motorola Allen-Bradley 100-k motorola 2443 VK200 rfc vk200 rfc with 6 turns J309 J310 jfet PDF

    SST308

    Abstract: SST310 SST309 U308 J308 J310
    Text: N-Channel JFET High Frequency Amplifier LLC J308 – J310 / SST308 – SST310 FEATURES • Industry Standard Part in Low Cost Plastic Package • High Power Gain Noise • Low • Dynamic Range Greater Than 100dB • Easily Matched to 75Ω Input APPLICATIONS


    Original     		SST308 SST310 100dB -10mA -55oC 150oC 135oC 100Hz 105MHz SST308 SST310 SST309 U308 J308 J310 PDF

    j310

    Abstract: J309 J310 equivalent
    Text: ON Semiconductort J309 J310 JFET VHF/UHF Amplifiers N–Channel – Depletion ON Semiconductor Preferred Devices MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc Forward Gate Current IGF 10 mAdc Total Device Dissipation @ TA = 25°C


    Original     		226AA) j310 J309 J310 equivalent PDF

    j310

    Abstract: j310 equivalent
    Text: ON Semiconductort J309 J310 JFET VHF/UHF Amplifiers N−Channel − Depletion ON Semiconductor Preferred Devices MAXIMUM RATINGS Rating Symbol Value Unit Drain −Source Voltage VDS 25 Vdc Gate−Source Voltage VGS 25 Vdc Forward Gate Current IGF 10 mAdc Total Device Dissipation @ TA = 25°C


    Original     		O-226AA) j310 j310 equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier Features • • • • This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92.


    Original     		MMBFJ309 MMBFJ310 MMBFJ309 OT-23 PDF

    J310

    Abstract: j310 equivalent J310 applications J309 MMBFJ310 rf fairchild transistor 100mhz amplifier MMBFJ309 J310G N-CHANNEL dual gate ultra low noise vhf LOW NOISE AMPLIFIER J-310
    Text: J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier Features • • • • This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92.


    Original     		MMBFJ309 MMBFJ310 MMBFJ309 OT-23 J310 j310 equivalent J310 applications J309 MMBFJ310 rf fairchild transistor 100mhz amplifier J310G N-CHANNEL dual gate ultra low noise vhf LOW NOISE AMPLIFIER J-310 PDF

    vk200 choke

    Abstract: J309 J310 VK200 rfc J308 MVM010W U310 539-002 J308-D
    Text: J308 JFET VHF/UHF Amplifiers N−Channel — Depletion http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Drain −Source Voltage VDS 25 Vdc Gate−Source Voltage VGS 25 Vdc Forward Gate Current IGF 10 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C


    Original     		O-226AA) J308/D vk200 choke J309 J310 VK200 rfc J308 MVM010W U310 539-002 J308-D PDF

    LSJ310

    Abstract: j310 replacement
    Text: LSJ310 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix LSJ310 The LSJ310 is a high frequency n-channel JFET offering a wide range and low noise performance. The SOT-23 package is well suited for cost sensitive applications and mass production.


    Original     		LSJ310 LSJ310 OT-23 100dB 350mW j310 replacement PDF

    J310 equivalent

    Abstract: U309 U310 Siliconix Siliconix JFETs Dual u430 U310
    Text: Tem ic J/SST/U308 Series Siliconix N-Channel JFETs J308 J309 J310 SST308 SST309 SST310 U309 U310 Product Summary P a rt N um ber J308 J309 J310 SST308 SST309 SST310 U309 U310 IDss M in mA V(BRkîss M in (V ): : —1 to —6.5 - 1 to - 4 - 2 to -6.5 -25 -25


    OCR Scan     		J/SST/U308 SST308 SST309 SST310 SST310 seeAN104, P-37514-- J310 equivalent U309 U310 Siliconix Siliconix JFETs Dual u430 U310 PDF

    U310

    Abstract: No abstract text available
    Text: J/SST/U308 Series Vishay Siliconix N-Channel JFETs J308 SST308 U309 J309 SST309 U310 J310 SST310 PRODUCT SUMM ARY Part Number VgW V J308 - 1 to - 6 . 5 -2 5 8 J309 -1 to - 4 -2 5 10 12 J310 - 2 to - 6 . 5 -2 5 6 24 SST308 -1 to - 6 . 5 -2 5 8 12 SST309 - 1 to —4


    OCR Scan     		J/SST/U308 SST308 SST309 SST310 SST310 S-04028-- 04-Jun-01 U310 PDF

    u310 siliconix

    Abstract: Siliconix J310 marking 6AC sot23 U309 U310
    Text: T e m ic J/SST/U308 Series Siliconix N-Channel JFETs J308 J309 J310 SST308 SST309 SST310 U309 U310 Product Summary P a rt N um ber I DSS M in mA - w Ë G s m 0 ) : X : V(BR)u ss M in (V) 12 J308 - 1 to -6 .5 -2 5 8 J309 - 1 to - 4 -2 5 10 12 J310 - 2 to -6 .5


    OCR Scan     		J/SST/U308 SST308 SST309 SST310 SST310 seeAN104, P-37514--Rev. u310 siliconix Siliconix J310 marking 6AC sot23 U309 U310 PDF

    U309

    Abstract: Siliconix J310 SST310 u310 u310 siliconix
    Text: Tem ic J/SST/U308 Series S e m i c o n d u c t o r s N-Channel JFETs J308 J309 J310 Product Summary Part Number V g S oH (v ) V (BR)GSS M in (v ) J308 J309 J310 SST308 SST309 SST310 U309 U310 -1 to -6.5 -1 to —4 -2 to -6.5 -1 to -6.5 -1 to —4 -2 to -6.5


    OCR Scan     		J/SST/U308 SST308 SST309 SST310 SST310 S-52424-- 14-Apr-97 U309 Siliconix J310 u310 u310 siliconix PDF

    Untitled

    Abstract: No abstract text available
    Text: B 62 9-97 J310 N -C H A N N EL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • MIXER Absolute maximum ratings at TA * 25°C • OSCILLATOR • VHF/UHF AMPLIFIER Reverse Gate Source Voltage - 25 V Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation


    OCR Scan     		T0-226AA PDF

    j310

    Abstract: J310 equivalent z60b J309 4dcm J309-J310 J309 application note MMBFJ309 MMBFJ310
    Text: r D is c r e te P O W E R & S i g n a l ^ . T e c h n o lo g ie s , , S e m i c o n d u c t o r “ & J309 J310 MMBFJ309 MMBFJ310 N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and


    OCR Scan     		MMBFJ309 MMBFJ310 040ciS2 j310 J310 equivalent z60b J309 4dcm J309-J310 J309 application note MMBFJ310 PDF

    Untitled

    Abstract: No abstract text available
    Text: bbsa'm Philips Sem iconductors 0024012 2T2 • a p x N-channel silicon field-effect transistors N AUER PHIL IPS /DISCR ETE Preliminary specification J308/309/310 b?E PIN CONFIGURATION FEATURES • Low noise • Interchangeability of drain and source connections


    OCR Scan     		J308/309/310 -TO-92 MCD212 bbS3831 PDF

    Siliconix J310

    Abstract: J309
    Text: C T S ilic o n ix J308 SERIES N-Channel JFETs The J308 Series is a popular, low-cost device which offers superb amplification characteristics. It features high-gain, low noise typically < 6nVVRz and low gate leakage (typically < 2 pA). Of special interest,


    OCR Scan     		PDF