Untitled
Abstract: No abstract text available
Text: SDS20D Semiconductor Switching Diode HIGH VOLTAGE SWITCHING APPLICATIONS Features PIN Connection y Fast switching diode in case SOD-323 y For general purpose switching application 1 Ordering Information Device 2 Marking Code 1 Package J3 □ SDS20D 1. Anode
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SDS20D
OD-323
KSD-D6C024-000
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Untitled
Abstract: No abstract text available
Text: OVAL SOLID STATE LAMP PRELIMINARY SPEC Part Number: WP5603SIDL/SD/J3 Hyper Red Features Description zOutstanding material efficiency. The Hyper Red device is based on light emitting diode chip zReliable and rugged. made from AlGaInP. zRoHS compliant. Package Dimensions
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WP5603SIDL/SD/J3
DSAI9678
APR/09/2009
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Untitled
Abstract: No abstract text available
Text: OVAL SOLID STATE LAMP Part Number: WP5603SYDL/SD/J3 PRELIMINARY SPEC Super Bright Yellow Features Description zOutstanding material efficiency. The Super Bright Yellow device is based on light emitting zReliable and rugged. diode chip made from AlGaInP. zRoHS compliant.
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WP5603SYDL/SD/J3
DSAI9679
APR/09/2009
Viewi09/2009
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Untitled
Abstract: No abstract text available
Text: OVAL SOLID STATE LAMP Part Number: WP5603SYDL/SD/J3 Super Bright Yellow Features Description z Outstanding material efficiency. The Super Bright Yellow device is based on light emitting z Reliable and rugged. diode chip made from AlGaInP. z RoHS compliant.
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WP5603SYDL/SD/J3
DSAI9679
MAR/03/2011
WP5603SYDL/SD/J3
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Untitled
Abstract: No abstract text available
Text: OVAL SOLID STATE LAMP Part Number: WP5603SIDL/SD/J3 Hyper Red Features Description Outstanding material efficiency. The Hyper Red device is based on light emitting diode chip Reliable and rugged. made from AlGaInP. RoHS compliant. Package Dimensions
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WP5603SIDL/SD/J3
DSAI9678
FEB/26/2014
110102resentative
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Untitled
Abstract: No abstract text available
Text: T-1 3mm SOLID STATE LAMP PRELIMINARY SPEC Part Number: WP7104SEC/J3 Hyper Red Features Description zLow power consumption. The Hyper Red device is based on light emitting diode chip zPopular T-1 diameter package. made from AlGaInP. zGeneral purpose leads.
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WP7104SEC/J3
DSAI9666
MAR/05/2009
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Untitled
Abstract: No abstract text available
Text: OVAL SOLID STATE LAMP Part Number: L-5603SIDL/SD-J3 Hyper Red Features Description z Outstanding material efficiency. The Hyper Red device is based on light emitting diode chip z Reliable and rugged. made from AlGaInP. z RoHS compliant. Package Dimensions
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L-5603SIDL/SD-J3
DSAJ0526
AUG/30/2013
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Untitled
Abstract: No abstract text available
Text: T-1 3/4 5mm SOLID STATE LAMP PRELIMINARY SPEC Part Number: WP7083SED/J3 Hyper Red Features Description zOutstanding material efficiency. The Hyper Red device is based on light emitting diode chip zReliable and rugged. made from AlGaInP. zRoHS compliant.
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WP7083SED/J3
DSAI9680
APR/03/2009
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Untitled
Abstract: No abstract text available
Text: OVAL SOLID STATE LAMP Part Number: WP5603SIDL/SD/J3 Hyper Red Features Description z Outstanding material efficiency. The Hyper Red device is based on light emitting diode chip z Reliable and rugged. made from AlGaInP. z RoHS compliant. Package Dimensions
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WP5603SIDL/SD/J3
DSAI9678
MAR/03/2011
WP5603SIDL/SD/J3
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Untitled
Abstract: No abstract text available
Text: OVAL SOLID STATE LAMP Part Number: WP5603SYDL/SD/J3 Super Bright Yellow Features Description z Outstanding material efficiency. The Super Bright Yellow device is based on light emitting z Reliable and rugged. diode chip made from AlGaInP. z RoHS compliant.
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WP5603SYDL/SD/J3
DSAI9679
JUL/20/2012
G03SYDL/SD/J3
WP5603SYDL/SD/J3
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Untitled
Abstract: No abstract text available
Text: OVAL SOLID STATE LAMP Part Number: WP5603SIDL/SD/J3 Hyper Red Features Description z Outstanding material efficiency. The Hyper Red device is based on light emitting diode chip z Reliable and rugged. made from AlGaInP. z RoHS compliant. Package Dimensions
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WP5603SIDL/SD/J3
DSAI9678
JUL/19/2012
03SIDL/SD/J3
WP5603SIDL/SD/J3
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Untitled
Abstract: No abstract text available
Text: T-1 3/4 5mm SOLID STATE LAMP Part Number: WP7083SYD/J3 PRELIMINARY SPEC Super Bright Yellow Features Description zOutstanding material efficiency. The Super Bright Yellow device is based on light emitting zReliable and rugged. diode chip made from AlGaInP.
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WP7083SYD/J3
DSAI9681
APR/03/2009
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Untitled
Abstract: No abstract text available
Text: OVAL SOLID STATE LAMP Part Number: L-5603SIDL/SD-J3 Hyper Red Features Description z Outstanding material efficiency. The Hyper Red device is based on light emitting diode chip z Reliable and rugged. made from AlGaInP. z RoHS compliant. Package Dimensions
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L-5603SIDL/SD-J3
DSAJ0526
AUG/30/2013
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Untitled
Abstract: No abstract text available
Text: OVAL SOLID STATE LAMP Part Number: WP5603SYDL/SD/J3 Super Bright Yellow Features Description z Outstanding material efficiency. The Super Bright Yellow device is based on light emitting z Reliable and rugged. diode chip made from AlGaInP. z RoHS compliant.
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WP5603SYDL/SD/J3
DSAI9679
MAR/19/2013
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Untitled
Abstract: No abstract text available
Text: 3.5x2.8mm SURFACE MOUNT LED LAMP Part Number: AA3528SES/J3-AMT Hyper Red Features Description z Industry standard PLCC-2 package. The Hyper Red device is based on light emitting diode chip z High reliability LED package. made from AlGaInP. z Wide viewing angle.
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AA3528SES/J3-AMT
2000pcs
ED4701/100
DSAL3710
AUG/31/2012
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Untitled
Abstract: No abstract text available
Text: T-1 3mm SOLID STATE LAMP Part Number: WP7104SYC/J3 PRELIMINARY SPEC Super Bright Yellow Features Description z Low power consumption. The Super Bright Yellow device is based on light emitting z Popular T-1 diameter package. diode chip made from AlGaInP.
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WP7104SYC/J3
DSAI9665
APR/02/2009
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Untitled
Abstract: No abstract text available
Text: 3.5x2.8mm SURFACE MOUNT LED LAMP Part Number: AA3528SES/J3-AMT Hyper Red Features Description z Industry standard PLCC-2 package. The Hyper Red device is based on light emitting diode chip z High reliability LED package. made from AlGaInP. z Wide viewing angle.
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AA3528SES/J3-AMT
1500pcs
ED4701/100
DSAL3710
NOV/11/2010
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Untitled
Abstract: No abstract text available
Text: T-1 3/4 5mm SOLID STATE LAMP Part Number: WP7083SED/J3 Hyper Red Features Description z Outstanding material efficiency. The Hyper Red device is based on light emitting diode chip z Reliable and rugged. made from AlGaInP. z RoHS compliant. Package Dimensions
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WP7083SED/J3
DSAI9680
MAR/05/2011
Dic680
WP7083SED/J3
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Untitled
Abstract: No abstract text available
Text: T-1 3/4 5mm SOLID STATE LAMP Part Number: WP7083SYD/J3 Super Bright Yellow Features Description z Outstanding material efficiency. The Super Bright Yellow device is based on light emitting z Reliable and rugged. diode chip made from AlGaInP. z RoHS compliant.
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WP7083SYD/J3
DSAI9681
MAR/29/2013
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Untitled
Abstract: No abstract text available
Text: T-1 3/4 5mm SOLID STATE LAMP Part Number: WP7083SED/J3 Hyper Red Features Description z Outstanding material efficiency. The Hyper Red device is based on light emitting diode chip z Reliable and rugged. made from AlGaInP. z RoHS compliant. Package Dimensions
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WP7083SED/J3
DSAI9680
MAR/29/2013
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Untitled
Abstract: No abstract text available
Text: T-1 3/4 5mm SOLID STATE LAMP Part Number: WP7083SYD/J3 Super Bright Yellow Features Description z Outstanding material efficiency. The Super Bright Yellow device is based on light emitting z Reliable and rugged. diode chip made from AlGaInP. z RoHS compliant.
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WP7083SYD/J3
DSAI9681
MAR/05/2011
WP7083SYD/J3
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Untitled
Abstract: No abstract text available
Text: SKNa 102 Stud Diode Avalanche Diode SKNa 102 8NO2P:1 ?M2B@ R D77 $ N:&=1:5: %&'5+ J3/ 3(,1(5350 3.+/&,13(P E:&= 2:1( 8 YZ77 ¥777 ¥D77 ¥677 ¥Z77 ¥T77 ?M$8 R CD6 $ N01(S CT7U >) R T7 VEP @GH& C7D[YZ @GH& C7D[¥7 @GH& C7D[¥D @GH& C7D[¥6 @GH& C7D[¥Z
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NC77P
CT777
CD677
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6BJ3
Abstract: E1270 6bj3 tube E12-70 I960 general electric
Text: 6 B J3 ELECTRONICS ge 1 6BJ3 4-63 COMPACTRON DIODE FOR TV DAMPING DIODE APPLICATIONS DESCRIPTION AND R A T IN G ^ - — The 6BJ3 is a compactron containing a single heater-cathode type diode. It is intended for service as the damping diode in the horizontal-deflection circuit of
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E12-70,
K-5561I-TD
6BJ3
E1270
6bj3 tube
E12-70
I960
general electric
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Untitled
Abstract: No abstract text available
Text: HITACHI/ OPTOELECTRONICS S1E t • IMIbSOS QD1171D Mb? BiHITM HE1301R- T-4 T-J3 Infrared Em itting D iod es (IRED) Description HE1301R is a 1.3 /¿m InGaAsP infrared emit ting diode with double heterojunction structure, which provides high speçd response.
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QD1171D
HE1301R--------------
HE1301R
HE1301R
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