TE28F640J3C-120
Abstract: 28F64J3 28f256j3c SL894 RC28F128J3C-150 SL897 28F128j3c TE28F640J3C120 sl896 28F320J3C
Text: Intel StrataFlash Memory J3 256-Mbit J3 Family Specification Update June 2005 The 28F256J3, 28F128J3, 28F640J3, and 28F320J3 may contain design defects or errors known as errata that may cause the product to deviate from published specifications. Current
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256-Mbit
28F256J3,
28F128J3,
28F640J3,
28F320J3
TE28F640J3C-120
28F64J3
28f256j3c
SL894
RC28F128J3C-150
SL897
28F128j3c
TE28F640J3C120
sl896
28F320J3C
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DP5Z1MM8NKH3
Abstract: 00FIH
Text: 1Mx8, 120 - 200ns, STACK/PGA 30A189-01 A 8 Megabit FLASH EEPROM DP5Z1MM8NKY/I3/H3/J3/DP5Z1MX8NKA3 PRELIMINARY DESCRIPTION: The DP5Z1MM8NKY/I3/H3/J3/DP5Z1MX8NKA3 ‘’SLCC’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’
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200ns,
30A189-01
50-pin
DP5Z1MM8NKH3
00FIH
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DP5Z1MM16PH3
Abstract: DP5Z1MM16PI3 DP5Z1MM16PJ3 DP5Z1MM16PY DP5Z1MW16PA3
Text: 1Mx16, 120 - 200ns, STACK/PGA 30A162-21 A 16 Megabit FLASH EEPROM DP5Z1MM16PY/I3/H3/J3/DP5Z1MW16PA3 PRELIMINARY DESCRIPTION: The DP5Z1MM16PY/I3/H3/J3/DP5Z1MW16PA3 ‘’SLCC’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’
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1Mx16,
200ns,
30A162-21
DP5Z1MM16PY/I3/H3/J3/DP5Z1MW16PA3
50-pin
16-Megabits
DP5Z1MM16PY
DP5Z1MM16PY/I3/H3/J3/DP5Z1MW16PA3
DP5Z1MM16PH3
DP5Z1MM16PI3
DP5Z1MM16PJ3
DP5Z1MM16PY
DP5Z1MW16PA3
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100C1296
Abstract: No abstract text available
Text: F E AT U R E S MODEL NO. 100C1296 1 5 - 1 00 0 MHz High Isolation +40 dBm 3rd Order Intercept Non-Reflective CMOS Driver SMA Connectors SP6T High Isolation PIN Diode SP6T PART IDENTIFICATION 4.00 ± .03 3.836 0.8 J1 J2 J3 J4 J5 J6 .60 0.8 J1 1.586 J2 J3 J4
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100C1296
100C1296
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100C1286
Abstract: 836 DIODE
Text: F E AT U R E S MODEL NO. 100C1286 20 - 6 0 0 MHz High Isolation +40 dBm 3rd Order Intercept Non-Reflective TTL Driver SMA Connectors SP6T High Isolation PIN Diode SP6T PART IDENTIFICATION 4.00 ± .03 3.836 0.8 J1 J2 J3 J4 J5 J6 .60 0.8 J1 1.586 J2 J3 J4 J5
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100C1286
100C1286
836 DIODE
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Untitled
Abstract: No abstract text available
Text: F E AT U R E S MODEL NO. 100C12 95 15 - 1000 MHz 2.4 mA, +15 VDC High Isolation +38 dBm 3rd Order Intercept Non-Reflective CMOS Driver SMA Connectors SP5T High Isolation PIN Diode SP5T J1 J2 J3 J4 J5 3.50 ± 0.3 .08 .08 3.336 J1 J2 .093 DIA Thru 4 Holes J3
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100C12
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100C15
Abstract: J3 diode
Text: F E AT U R E S MODEL NO. 100C15 9 8 2 - 3 2 MHz 0.1 dB Insertion Loss 500 Watts CW TTL Driver Type N Connectors SP2T 3.00 ± .03 High Power PIN Diode SP2T CONNECTOR TYPE N, 3 PLACES J2 PART IDENTIFICATION J3 J1 1.687 .687 .25 J1 J3 • • J2 3.00 ± .03 2.500
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100C15
J3 diode
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Untitled
Abstract: No abstract text available
Text: F E AT U R E S MODEL NO. 100C10 32 1 0 0 - 1 4 0 0 MHz 0.5 dB Insertion Loss 20 Watts CW TTL Driver SMA, BNC or TNC Connectors SP2T Medium Power PIN Diode SP2T 1.00±.03 2.75±.03 PART IDENTIFICATION 2.250 . 25 .50 J1 J3 J2 1.75 .06 . 25 J3 +5V CONT 1.250
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100C10
100C1032
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100C1032
Abstract: BNC T connectors INSERTION LOSS 100C10
Text: F E AT U R E S MODEL NO. 100C10 3 2 1 0 0 - 14 0 0 MHz 0.5 dB Insertion Loss 20 Watts CW TTL Driver SMA, BNC or TNC Connectors SP2T Medium Power PIN Diode SP2T 1.00±.03 2.75±.03 PART IDENTIFICATION 2.250 . 25 .50 J1 J3 J2 1.75 .06 . 25 J3 +5V CONT 1.250
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100C10
100C1032
BNC T connectors INSERTION LOSS
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100C15
Abstract: No abstract text available
Text: F E AT U R E S MODEL NO. 100C15 9 2 2 0 - 5 00 MHz 0.4 dB Insertion Loss 20 Watts CW TTL Driver SMA Connectors SP2T .19 .25 .375 Medium Power PIN Diode SP2T .156 DIA THRU 4 HOLES 2.500 +5V CONT J2 J3 -V GND 2.00 2.375 ± .03 2.75 ± .03 J1 J1 J3 • • J2
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100C15
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Untitled
Abstract: No abstract text available
Text: OVAL SOLID STATE LAMP PRELIMINARY SPEC Part Number: WP5603SIDL/SD/J3 Hyper Red Features Description zOutstanding material efficiency. The Hyper Red device is based on light emitting diode chip zReliable and rugged. made from AlGaInP. zRoHS compliant. Package Dimensions
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WP5603SIDL/SD/J3
DSAI9678
APR/09/2009
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Untitled
Abstract: No abstract text available
Text: SDS20D Semiconductor Switching Diode HIGH VOLTAGE SWITCHING APPLICATIONS Features PIN Connection y Fast switching diode in case SOD-323 y For general purpose switching application 1 Ordering Information Device 2 Marking Code 1 Package J3 □ SDS20D 1. Anode
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SDS20D
OD-323
KSD-D6C024-000
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Untitled
Abstract: No abstract text available
Text: OVAL SOLID STATE LAMP Part Number: WP5603SYDL/SD/J3 PRELIMINARY SPEC Super Bright Yellow Features Description zOutstanding material efficiency. The Super Bright Yellow device is based on light emitting zReliable and rugged. diode chip made from AlGaInP. zRoHS compliant.
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WP5603SYDL/SD/J3
DSAI9679
APR/09/2009
Viewi09/2009
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Untitled
Abstract: No abstract text available
Text: 3.5x2.8mm SURFACE MOUNT LED LAMP Part Number: AA3528SYS/J3 Super Bright Yellow Features Description z Single color. The Super Bright Yellow device is based on light emitting z Suitable for all SMT assembly and solder process. diode chip made from AlGaInP.
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AA3528SYS/J3
1500pcs
tDSAL0012
DEC/24/2010
AA3528SYS/J3
DSAL0012
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Untitled
Abstract: No abstract text available
Text: OVAL SOLID STATE LAMP Part Number: WP5603SIDL/SD/J3 Hyper Red Features Description Outstanding material efficiency. The Hyper Red device is based on light emitting diode chip Reliable and rugged. made from AlGaInP. RoHS compliant. Package Dimensions
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WP5603SIDL/SD/J3
DSAI9678
FEB/26/2014
110102resentative
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Untitled
Abstract: No abstract text available
Text: 3.5x2.8mm SURFACE MOUNT LED LAMP Part Number: AA3528SYSK/J3 Super Bright Yellow Features Description z Single color. The Super Bright Yellow device is based on light emitting z Suitable for all SMT assembly and solder process. diode chip made from AlGaInP.
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AA3528SYSK/J3
2000pcs
DSAN2339
SEP/23/2013
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Untitled
Abstract: No abstract text available
Text: 2.0x1.25mm SMD CHIP LED LAMP Part Number: APT2012SYCK/J3-PRV Super Bright Yellow Features Description z 2.0mm x1.25mm SMT LED,0.75mm thickness. The Super Bright Yellow device is based on light emitting z Low power consumption. diode chip made from AlGaInP.
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APT2012SYCK/J3-PRV
2000pcs
DSAN0375
JUN/05/2013
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Untitled
Abstract: No abstract text available
Text: T-1 3mm SOLID STATE LAMP PRELIMINARY SPEC Part Number: WP7104SEC/J3 Hyper Red Features Description zLow power consumption. The Hyper Red device is based on light emitting diode chip zPopular T-1 diameter package. made from AlGaInP. zGeneral purpose leads.
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WP7104SEC/J3
DSAI9666
MAR/05/2009
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Untitled
Abstract: No abstract text available
Text: OVAL SOLID STATE LAMP Part Number: L-5603SIDL/SD-J3 Hyper Red Features Description z Outstanding material efficiency. The Hyper Red device is based on light emitting diode chip z Reliable and rugged. made from AlGaInP. z RoHS compliant. Package Dimensions
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L-5603SIDL/SD-J3
DSAJ0526
AUG/30/2013
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Untitled
Abstract: No abstract text available
Text: 3.1x1.4mm SURFACE MOUNT LED LAMP Part Number: AA3114SES/J3 Hyper Red Features Description z 3.1mm x 1.4mm, 1.2mm high, only minimum space required. The Hyper Red device is based on light emitting diode chip z Suitable for compact optoelectronic applications.
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AA3114SES/J3
2000pcs
spDSAK3071
AUG/07/2012
AA3114SES/J3
DSAK3071
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1117 S Transistor
Abstract: TOSHIBA bat Transistor b 1117
Text: TOSHIBA TENTATIVE GT5J311,GT5J311 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR G T5 J3 1 1 , SILICON N CHANNEL IGBT G T 5 J3 1 1 (S M ) Unit in mm HIGH POWER SWITCHING APPLICATIONS GT5J311 MOTOR CONTROL APPLICATIONS 10.3 MAX The 3rd Generation Enhancement-Mode
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GT5J311
GT5J311
30//s
1117 S Transistor
TOSHIBA bat
Transistor b 1117
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GT10J312
Abstract: CP20A
Text: GT10J312,GT10J312 SM TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 1 0 J3 1 2 , G T 1 0 J3 1 2 ( S M ) Unit in mm HIGH POWER SWITCHING APPLICATIONS GT10J312 MOTOR CONTROL APPLICATIONS 1.32 The 3rd Generation Enhancement-Mode
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GT10J312
GT10J312,
100fl
CP20A
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30A18
Abstract: No abstract text available
Text: 8 Megabit FLASH EEPROM D EN SE-PA C DP5Z1MM8NKY/Í3/H3/J3/DP5Z1MX8NKA3 M I C K OS V S T \í M S PRELIM INARY D E SC R IP T IO N : The D P5Z1MM8NKY/Í3/H3/J3/DP5Z1MX8NKA3 "S L C C " devices are a revolutionary new memory subsystem using Dense-Pac Microsystems'
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OCR Scan
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50-pin
150ns
200ns
30A159-01
30A18
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Untitled
Abstract: No abstract text available
Text: FEATURES • dc -150 MODEL NO. 100C0285 mhz tC ■ 0.35 dB Insertion Loss ■ 100 dB Isolation SP3T SP3T RELAY ■ Non-Reflective ■ SMA Connectors SOLDER TERMINAL -B 6 PLCS -1, 2 (5 PLCS) _ o)J3 3 5004 © J2 @J 2001 J2 J1 .37 TYP J3 .75 1 .03 50 FAILSAFE (J1 - J4)
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100C0285
100C0285
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