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Catalog Datasheet	MFG & Type	Document Tags	PDF
MB60K Abstract: C-20Q0 MIKROELEKTRONIK Frankfurt Text: M B 60K Silico n G ate C M O S L S I The Fujitsu C-20Q0 M B 6 0 K Series is a highly integrated, low power, gate array LS I fabricated with silicon gate C M O S technology! The array consists of 2000 internal basic unit cells (2 input N A N D equiva lent) and 72 I/O cells. With the application of a	OCR Scan	MB60K C-20Q0 J22833 CA95051, D-600Ã C-20Q0 MIKROELEKTRONIK Frankfurt	PDF
B-500 diode Abstract: darlington buffer array B-500 MB15K Fujitsu Transistor Array fujitsu 42pin MB-15 Text: MB 15K Low Power Schottky TTL FUJITSU 03 DEV 374^7^5 Absolute Maximum Ratings Symbol Value Unit Supply Voltage Vc c 7 V Input Voltage V\| —0.5 to +5.5 V Output Voltage v0 —0.5 to +5.5 V Operating Temperature V qp —25 to +85 °C —65 to +150 °c Rating	OCR Scan	B-500 MB15K J22833 B-500 diode darlington buffer array B-500 Fujitsu Transistor Array fujitsu 42pin MB-15	PDF
mbm27c128 Abstract: CERAMIC LEADLESS CHIP CARRIER LCC 32 socket 27C128-25-X BM TVS M27C128 Text: FU JITSU CMOS UV ERASABLE 131072-BIT READ ONLY MEMORY TS119-A886 June 1988 CMOS 131072 BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM 27C128 is a high speed 131,072 bit static complementary MOS erasable and electrically reprogrammable read only memory EPROM .	OCR Scan	131072-BIT TS119-A886 27C128 28-pin 32-Pad 27C128. A950S4-3197, 0V2154-872C2 mbm27c128 CERAMIC LEADLESS CHIP CARRIER LCC 32 socket 27C128-25-X BM TVS M27C128	PDF
Untitled Abstract: No abstract text available Text: FUJITSU 8-CH 10-BIT A/D CONVERTER ADC MB4051 July 1989 E dition 1.0 8-CHANNEL 10-BIT A /D CONVERTER The Fujitsu MB4051 is a general purpose analog-to-digital converter (ADC) w hich features eight channels o f analog inputs, 1 0 -b it parallel data I/O port	OCR Scan	10-BIT MB4051 MB4051 42-pin D-6000 PV0004-897A1	PDF
MB8861 Abstract: MB886 B882 MB885 Text: $$+$$/$%%$^ FUJITSU January 1989 E ditio n 3.0 U L T R A HIGH SPEED E C L F A M IL Y T h e F u jits u M B 8 8 0 series is a fa m ily o f u ltra high speed E C L integrated circu its. It is useful fo r G iga-bits fib e r c o m m u n ic a tio n system s, and ele ctrica l	OCR Scan	D-6000 PV2258-891A3 MB8861 MB886 B882 MB885	PDF
nand gate layout Abstract: darlington buffer array B2000 High speed output buffer IC 5V 502-016 Text: MB 17K Low Power Schottky TTL c c_ The Fujitsu B-2000 IV1B17K series is an integrated circuit gate array fabricated with a low power Schottky T T L (Transistor-Transistor Logic) process. The array consists of 2108 internal 3-input NAND gates and 112 input/output buffers.	OCR Scan	B-2000 IV1B17K J22833 CA95051, D-6000 V2042-819C nand gate layout darlington buffer array B2000 High speed output buffer IC 5V 502-016	PDF
Untitled Abstract: No abstract text available Text: T—42—11—-09' MB 66000V H Silicon Gate CMOS LSI The Fujitsu C -8 0 0 0 V H M B 6 6 0 0 0 V H Series is a very highly integrated, low power and high speed, gate array L S I fabricated w ith silicon gate C M O S technol ogy. The array consists o f 8 0 0 0 internal basic cells (2	OCR Scan	T--42--11--0 6000V J22833	PDF
F200L Abstract: furukawa utp Text: N FUJITSU MOS 1048576 BIT DYNAMIC RANDOM ACCESS MEMORY M B 811001-10 MB 811001-12 MB 811001-15 December 1986 Edition 2.0 1,048,576 x 1 BIT DYNAMIC RANDOM ACCESS MEMORY The Fujitsu MB 811001 is fu lly decoded NMOS dynamic random access memory organized as 1,048,576 words by one bit. The design is optimized for	OCR Scan	300-mil 18-pin 26-pin 20-pin CA95054-3197, D-6000 0V2260-86ZC2 F200L furukawa utp	PDF
MB8867 Abstract: MBL6800 SN7402 MB417 Text: F U J IT S U TTL TWO-PHASE CLOCK GENERATOR AND DRIVER MB 8867 MB 8867E October 1982 Edition 2.0 TWO-PHASE MICROPROCESSOR CLOCK The Fujitsu MB 8867 is an advanced Microprocessor Clock Generator/Driver LSI manufactured with Fujitsu's bipolar TTL process. The circuit generates	OCR Scan	MB8867 MB8867E L6800 MBL6800 SN7402 MB417	PDF
Untitled Abstract: No abstract text available Text: De J 374T7bS ODDOñHñ 4 T-42-11-09 M B 6 0 K Silicon Gate C M O S L S I T h e Fujitsu C -1500 M B 6 0 K Series is a highly integrated, low power, gate array L S I fabricated w ith silicon gate C M O S technology. T h e array consists of 2 000 internal basic unit cells (2 input N A N D equiva	OCR Scan	374T7bS T-42-11-09 00B5c J22833	PDF
ZIP-20P-M02 Abstract: MIKROELEKTRONIK Frankfurt Text: jc -> f* ft -t. N Q MOS 1048576 BIT FUJITSU DYNAMIC RANDOM ACCESS MEMORY MB 811001-10 MB 811001-12 MB 811001-15 December 1986 E dition 2.0 1,048,576 x 1 BIT DYNAMIC RANDOM ACCESS MEMORY The Fujitsu MB 811001 is fully decoded NMOS dynamic random access memory organized as 1,048,576 words by one bit. The design is optimized for	OCR Scan	300-mil 18-pin 26-pin 20-pin CA95054-3197, D-6000 0V226O-86ZC2 ZIP-20P-M02 MIKROELEKTRONIK Frankfurt	PDF