ultra low igss pA mosfet
Abstract: ultra low igss pA j174 Transistor AND DIODE Equivalent list Ultra High Input Impedance N-Channel JFET Amplifier sd210 3n164 equivalent SST113 ULTRA LOW NOISE N-CHANNEL JFET 2N3958 equivalent
Text: J210, J211, J212 LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER Linear Integrated Systems TO-92 Plastic FEATURES HIGH GAIN gfs = 7000µmho MINIMUM J211, J212 TO-92 D HIGH INPUT IMPEDANCE IGSS= 100pA MAXIMUM G LOW INPUT CAPACITANCE Ciss= 5pF TYPICAL
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100pA
360mW
ultra low igss pA mosfet
ultra low igss pA
j174
Transistor AND DIODE Equivalent list
Ultra High Input Impedance N-Channel JFET Amplifier
sd210
3n164 equivalent
SST113
ULTRA LOW NOISE N-CHANNEL JFET
2N3958 equivalent
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212 s sot-23
Abstract: 62w sot-23 rf transistor mark code H1 212 t sot-23 J212 J211 TOP CBVK741B019 F63TNR J211 MMBFJ211
Text: J211 / J212 / MMBFJ211 / MMBFJ212 MMBFJ211 MMBFJ212 J211 J212 G S G S TO-92 SOT-23 D Mark: 62W / 62X D NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient
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MMBFJ211
MMBFJ212
MMBFJ211
OT-23
212 s sot-23
62w sot-23
rf transistor mark code H1
212 t sot-23
J212
J211 TOP
CBVK741B019
F63TNR
J211
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Untitled
Abstract: No abstract text available
Text: J212 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J212 FEATURES DIRECT REPLACEMENT FOR SILICONIX J212 HIGH GAIN gfs = 7000µmho MIN HIGH INPUT IMPEDANCE IGSS = 100pA max LOW INPUT CAPACITANCE Ciss = 5pF ABSOLUTE MAXIMUM RATINGS @ 25°C unless otherwise noted
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OT-23
100pA
360mW
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Untitled
Abstract: No abstract text available
Text: J212 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J212 FEATURES DIRECT REPLACEMENT FOR SILICONIX J212 HIGH GAIN gfs = 7000µmho MIN HIGH INPUT IMPEDANCE IGSS = 100pA max LOW INPUT CAPACITANCE Ciss = 5pF ABSOLUTE MAXIMUM RATINGS @ 25°C unless otherwise noted
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100pAÂ
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SSTJ210
Abstract: J210
Text: N-Channel JFET LLC J210 – J212 / SSTJ210 – SSTJ212 DESCRIPTION FEATURES • Low Noise • Low Leakage • High Power Gain The J210 Series is an N-Channel JFET single device encapsulated in a TO-92 plastic package well suited for automated assembly. The device features low leakage,
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SSTJ210
SSTJ212
J210-11
SSTJ210-11
OT-23
-55oC
135oC
PI10V,
SSTJ210
J210
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J210
Abstract: SSTJ210 transistor j210 marking sot-23 212 s sot-23 J212 SSTJ211 SSTJ212 J210 equivalent
Text: N-Channel JFET CORPORATION J210 – J212 / SSTJ210 – SSTJ212 DESCRIPTION FEATURES • Low Noise • Low Leakage • High Power Gain The J210 Series is an N-Channel JFET single device encapsulated in a TO-92 plastic package well suited for automated assembly. The device features low leakage,
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SSTJ210
SSTJ212
J210-11
SSTJ210-11
OT-23
-55oC
135oC
J210
SSTJ210
transistor j210
marking sot-23
212 s sot-23
J212
SSTJ211
SSTJ212
J210 equivalent
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Untitled
Abstract: No abstract text available
Text: LSJ212 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J212 FEATURES DIRECT REPLACEMENT FOR SILICONIX J212 HIGH GAIN gfs = 7000µmho MIN HIGH INPUT IMPEDANCE IGSS = 100pA max LOW INPUT CAPACITANCE Ciss = 5pF
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LSJ212
100pA
360mW
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Untitled
Abstract: No abstract text available
Text: LSJ212 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J212 FEATURES DIRECT REPLACEMENT FOR SILICONIX J212 HIGH GAIN gfs = 7000µmho MIN HIGH INPUT IMPEDANCE IGSS = 100pA max LOW INPUT CAPACITANCE Ciss = 5pF
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LSJ212
OT-23
100pA
360mW
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VNC2-32
Abstract: V2DIP2-32 VNCL2-32Q
Text: Future Technology Devices International Ltd. V2DIP2-32 VNC2-32Q Development Module Datasheet Document Reference No.: FT_000164 Version 1.0 Issue Date: 2010-04-16 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom
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V2DIP2-32
VNC2-32Q
VNCL2-32Q
895-V2DIP2-32
V2DIP2-32
VNC2-32
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VNC2
Abstract: No abstract text available
Text: Future Technology Devices International Ltd. V2DIP2-32 VNC2-32Q Development Module Datasheet Document Reference No.: FT_000164 Version 1.0 Issue Date: 2010-04-16 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom
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V2DIP2-32
VNC2-32Q
V2DIP2-32
VNCL2-32Q
VNC2
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transistor j210
Abstract: 212 t sot-23
Text: G S G S TO-92 SOT-23 D Mark: 62V / 62W / 62X D NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from
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MMBFJ210
MMBFJ211
MMBFJ212
OT-23
transistor j210
212 t sot-23
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VNC2-32
Abstract: u1M code vnc2 ftdi spi example
Text: Future Technology Devices International Ltd. V2DIP1-32 VNC2-32Q Development Module Datasheet Document Reference No.: FT_000163 Version 1.0 Issue Date: 2010-04-16 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom
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V2DIP1-32
VNC2-32Q
V2DIP1-32
VNC2-32
u1M code
vnc2
ftdi spi example
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IO24
Abstract: VNC2-48 Vinculum II
Text: Future Technology Devices International Ltd. V2DIP1-48 VNC2-48 Development Module Datasheet Document Reference No.: FT_000236 Version 1.0 Issue Date: 2010-04-15 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom
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V2DIP1-48
VNC2-48
V2DIP1-48
IO24
Vinculum II
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V2DIP2-32
Abstract: usb flash drive circuit diagram Vdip1 VNC2-32
Text: Future Technology Devices International Ltd. V2DIP2-32 VNC2-32Q Development Module Datasheet Document Reference No.: FT_000164 Version 1.01 Issue Date: 2010-05-25 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom
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V2DIP2-32
VNC2-32Q
V2DIP2-32
VNCL2-32Q
usb flash drive circuit diagram
Vdip1
VNC2-32
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V2DIP1-32
Abstract: VNC2-32Q ftdi spi example usb flash drive circuit diagram t4 3570 datasheet Vdip1 VDIP2 VNC1L VNC2
Text: Future Technology Devices International Ltd. V2DIP1-32 VNC2-32Q Development Module Datasheet Document Reference No.: FT_000163 Version 1.01 Issue Date: 2010-05-25 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom
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V2DIP1-32
VNC2-32Q
V2DIP1-32
ftdi spi example
usb flash drive circuit diagram
t4 3570 datasheet
Vdip1
VDIP2
VNC1L
VNC2
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V2DA
Abstract: VDIP1
Text: Future Technology Devices International Ltd. V2DIP1-48 VNC2-48 Development Module Datasheet Document Reference No.: FT_000236 Version 1.0 Issue Date: 2010-04-15 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom
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V2DIP1-48
VNC2-48
895-V2DIP1-48
V2DIP1-48
V2DA
VDIP1
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EFE300M
Abstract: EFE400 EFE300 EFE400M EFE-300 J2/CMX7161
Text: EFE300 / EFE400 EFE300M / EFE400M AC/DC Power Supply Series APPLICATION NOTE 68892 EFE300_400 App note 4.doc Document Number 68892 Page 1 of 12 1. INPUT. 3
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EFE300
EFE400
EFE300M
EFE400M
EFE-300M
EFE-400M
EFE400
EFE400M
EFE-300
J2/CMX7161
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Untitled
Abstract: No abstract text available
Text: Future Technology Devices International Ltd. V2DIP1-48 VNC2-48 Development Module Datasheet Document Reference No.: FT_000236 Version 1.01 Issue Date: 2010-05-24 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom
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V2DIP1-48
VNC2-48
V2DIP1-48
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V2DIP1-48
Abstract: Vdip1 vnc2-48l1a usb flash drive circuit diagram vinculum VNC2-48 usb male connector pcb mounted Vinculum II
Text: Future Technology Devices International Ltd. V2DIP1-48 VNC2-48 Development Module Datasheet Document Reference No.: FT_000236 Version 1.01 Issue Date: 2010-05-24 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom
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V2DIP1-48
VNC2-48
V2DIP1-48
Vdip1
vnc2-48l1a
usb flash drive circuit diagram
vinculum
usb male connector pcb mounted
Vinculum II
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J31 transistor
Abstract: ST16C650A J37 transistor 48TQFP ST49C101A-XX XR16C850 XR16L651
Text: XR16L651 Evaluation Board User’s Manual Rev 1.3 Introduction EXAR is proud to announce the XR16L651 single channel UART. The XR16L651 48 pin TQFP package is compatible to ST16C450/550/650A and XR16C850. The board will support all these devices in the 48TQFP package when ordered from the factory. For a list of features, refer to the individual data sheets at
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XR16L651
XR16L651
ST16C450/550/650A
XR16C850.
48TQFP
ST16C650A
32-byte
16-byte
J31 transistor
J37 transistor
ST49C101A-XX
XR16C850
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SST210-11
Abstract: FL-41 J210 SST212 SST210
Text: calocfic N-Channel JFET CORPORATION J210 - J212/SST210 - SST212 FEATURES DESCRIPTION • Low Noise • Low Leakage • High Power Gain The J210 Series is an N-Channel JFE T single device encapsulated in a TO-92 plastic package well suited for automated assembly.
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OCR Scan
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J212/SST210
SST212
J210-11
SST210-11
OT-23
300ms,
443E2
FL-41
J210
SST212
SST210
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SS211
Abstract: ss 211
Text: N-Channel JFET caioqic CORPORATION J210 -J212/SST210 - SST212 FEATURES DESCRIPTION • Low Noise • Low Leakage • High Power Gain The J210 Series is an N-Channel JFE T single device encapsulated in a TO-92 plastic package well suited for automated assembly.
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OCR Scan
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-J212/SST210
SST212
J210-11
SST210-11
OT-23
J210-J212/SST21
300ms,
SS211
ss 211
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Untitled
Abstract: No abstract text available
Text: d o tfi1' caloqic CORPORATION N-ChannelJFET v J210 - J212/SST210 - SST212 FEATURES DESCRIPTION • Low Noise • Low Leakage • High Power Gain The J210 Series is an N-Channel JFE T single device encapsulated in a TO-92 plastic package well suited for automated assembly.
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OCR Scan
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J212/SST210
SST212
J210-11
SST210-11
OT-23
1B443SB
300ms,
1A44322
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J210 equivalent
Abstract: No abstract text available
Text: J210 SERIES N-Channel JFETs flTSEconix in co rp o rated The J210 Series of n-channel JFETs provides good general purpose amplifiers for a wide range of test and Instrumentation applications. This series features low-leakage Iq s s < 100 pA , high gain (g*, > 7 mSfor
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OCR Scan
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O-226AA)
2N5911
J210 equivalent
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