Untitled
Abstract: No abstract text available
Text: J210, J211, J212 / SSTJ210, SSTJ211, SSTJ212 LOW NOISE N-CHANNEL JFET GENERAL PURPOSE AMPLIFIER FEATURES HIGH GAIN gfs=7000µmho MINIMUM J211, J212 HIGH INPUT IMPEDENCE LOW CAPACITANCE TO-92 IGSS= 100pA MAXIMUM CISS= 5pF TYPICAL Plastic D ABSOLUTE MAXIMUM RATINGS
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SSTJ210,
SSTJ211,
SSTJ212
100pA
360mW
OT-23
SSTJ210
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Untitled
Abstract: No abstract text available
Text: J210, J211, J212 SSTJ210, SSTJ211, SSTJ212 LOW NOISE N-CHANNEL JFET GENERAL PURPOSE AMPLIFIER TO-92 TO-92 FEATURES HIGH GAIN gfs=7000µmho MINIMUM J211, J212 HIGH INPUT IMPEDENCE LOW CAPACITANCE Plastic D IGSS= 100pA MAXIMUM G CISS= 5pF TYPICAL S ABSOLUTE MAXIMUM RATINGS
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SSTJ210,
SSTJ211,
SSTJ212
100pA
OT-23
360mW
SSTJ210
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transistor j210
Abstract: J210 Siliconix JFETs Dual Siliconix N-Channel JFETs AN104 J211 J212
Text: J210/211/212 N-Channel JFETs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J211 –2.5 to –4.5 –25 6 7 J212 –4 to –6 –25 7 15 J211, For applications information see AN104, page 1.
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J210/211/212
AN104,
J211/212,
P-37404--Rev.
04-Jul-94
transistor j210
J210
Siliconix JFETs Dual
Siliconix N-Channel JFETs
AN104
J211
J212
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212 s sot-23
Abstract: 62w sot-23 rf transistor mark code H1 212 t sot-23 J212 J211 TOP CBVK741B019 F63TNR J211 MMBFJ211
Text: J211 / J212 / MMBFJ211 / MMBFJ212 MMBFJ211 MMBFJ212 J211 J212 G S G S TO-92 SOT-23 D Mark: 62W / 62X D NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient
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MMBFJ211
MMBFJ212
MMBFJ211
OT-23
212 s sot-23
62w sot-23
rf transistor mark code H1
212 t sot-23
J212
J211 TOP
CBVK741B019
F63TNR
J211
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Siliconix AN104
Abstract: AN104 J210 J211 J212
Text: J210/211/212 Siliconix NĆChannel JFETs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 -1 to -3 -25 4 2 J211 -2.5 to -4.5 -25 6 7 J212 -4 to -6 -25 7 15 J211, For applications information see AN104, page 21. Features
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J210/211/212
AN104,
J211/212,
P-37404--Rev.
Siliconix AN104
AN104
J210
J211
J212
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J211 jfet siliconix
Abstract: J211
Text: J211 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J211 FEATURES DIRECT REPLACEMENT FOR SILICONIX J211 HIGH GAIN gfs = 7000µmho MIN HIGH INPUT IMPEDANCE IGSS = 100pA max LOW INPUT CAPACITANCE Ciss = 5pF ABSOLUTE MAXIMUM RATINGS @ 25°C unless otherwise noted
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OT-23
100pA
360mW
J211 jfet siliconix
J211
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Siliconix N-Channel JFET
Abstract: No abstract text available
Text: LSJ211 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J211 FEATURES DIRECT REPLACEMENT FOR SILICONIX J211 HIGH GAIN gfs = 7000µmho MIN HIGH INPUT IMPEDANCE IGSS = 100pA max LOW INPUT CAPACITANCE Ciss = 5pF
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LSJ211
OT-23
100pA
360mW
Siliconix N-Channel JFET
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2N5911
Abstract: SSTJ212 transistor j210 J210 J211 J212 SSTJ211
Text: J/SSTJ210 Series Vishay Siliconix N-Channel JFETs J210 SSTJ211 J211 SSTJ212 J212 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J/SSTJ211 –2.5 to –4.5 –25 6 7 J/SSTJ212 –4 to –6 –25
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J/SSTJ210
SSTJ211
SSTJ212
J/SSTJ211
J/SSTJ212
J211/212,
18-Jul-08
2N5911
SSTJ212
transistor j210
J210
J211
J212
SSTJ211
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"Z2" marking
Abstract: No abstract text available
Text: J/SSTJ210 Series Vishay Siliconix N-Channel JFETs J210 SSTJ211 J211 SSTJ212 J212 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J/SSTJ211 –2.5 to –4.5 –25 6 7 J/SSTJ212 –4 to –6 –25
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J/SSTJ210
J/SSTJ211
J/SSTJ212
SSTJ211
SSTJ212
J211/212,
08-Apr-05
"Z2" marking
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SSTJ211
Abstract: J210 transistor j210 J211 J212 SSTJ212 SOT-23 2.D SSTJ210 marking Z2 sot23
Text: J/SSTJ210 Series Vishay Siliconix N-Channel JFETs J210 SSTJ211 J211 SSTJ212 J212 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J/SSTJ211 –2.5 to –4.5 –25 6 7 J/SSTJ212 –4 to –6 –25
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J/SSTJ210
SSTJ211
SSTJ212
J/SSTJ211
J/SSTJ212
J211/212,
S-04028--Rev.
04-Jun-01
SSTJ211
J210
transistor j210
J211
J212
SSTJ212
SOT-23 2.D
SSTJ210
marking Z2 sot23
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transistor j210
Abstract: J210 J211 J212 SSTJ211 SSTJ212
Text: J/SSTJ210 Series N-Channel JFETs J210 J211 J212 SSTJ211 SSTJ212 Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J/SSTJ211 –2.5 to –4.5 –25 6 7 J/SSTJ212 –4 to –6 –25 7 15 Features
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J/SSTJ210
SSTJ211
SSTJ212
J/SSTJ211
J/SSTJ212
J211/212,
S-52428--Rev.
14-Apr-97
transistor j210
J210
J211
J212
SSTJ211
SSTJ212
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Siliconix JFETs Dual
Abstract: transistor j210 J210 J211 J212 SSTJ211 SSTJ212
Text: J/SSTJ210 Series N-Channel JFETs J210 J211 J212 SSTJ211 SSTJ212 Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J/SSTJ211 –2.5 to –4.5 –25 6 7 J/SSTJ212 –4 to –6 –25 7 15 Features
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J/SSTJ210
SSTJ211
SSTJ212
J/SSTJ211
J/SSTJ212
J211/212,
S-52428--Rev.
14-Apr-97
Siliconix JFETs Dual
transistor j210
J210
J211
J212
SSTJ211
SSTJ212
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transistor j210
Abstract: 212 t sot-23
Text: G S G S TO-92 SOT-23 D Mark: 62V / 62W / 62X D NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from
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MMBFJ210
MMBFJ211
MMBFJ212
OT-23
transistor j210
212 t sot-23
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VNC2-32
Abstract: V2DIP2-32 VNCL2-32Q
Text: Future Technology Devices International Ltd. V2DIP2-32 VNC2-32Q Development Module Datasheet Document Reference No.: FT_000164 Version 1.0 Issue Date: 2010-04-16 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom
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V2DIP2-32
VNC2-32Q
VNCL2-32Q
895-V2DIP2-32
V2DIP2-32
VNC2-32
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VNC2-32
Abstract: u1M code vnc2 ftdi spi example
Text: Future Technology Devices International Ltd. V2DIP1-32 VNC2-32Q Development Module Datasheet Document Reference No.: FT_000163 Version 1.0 Issue Date: 2010-04-16 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom
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V2DIP1-32
VNC2-32Q
V2DIP1-32
VNC2-32
u1M code
vnc2
ftdi spi example
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Untitled
Abstract: No abstract text available
Text: Future Technology Devices International Ltd. V2DIP1-32 VNC2-32Q Development Module Datasheet Document Reference No.: FT_000163 Version 1.01 Issue Date: 2010-05-25 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom
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V2DIP1-32
VNC2-32Q
V2DIP1-32
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V2DIP2-32
Abstract: usb flash drive circuit diagram Vdip1 VNC2-32
Text: Future Technology Devices International Ltd. V2DIP2-32 VNC2-32Q Development Module Datasheet Document Reference No.: FT_000164 Version 1.01 Issue Date: 2010-05-25 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom
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V2DIP2-32
VNC2-32Q
V2DIP2-32
VNCL2-32Q
usb flash drive circuit diagram
Vdip1
VNC2-32
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IO24
Abstract: VNC2-48 Vinculum II
Text: Future Technology Devices International Ltd. V2DIP1-48 VNC2-48 Development Module Datasheet Document Reference No.: FT_000236 Version 1.0 Issue Date: 2010-04-15 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom
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V2DIP1-48
VNC2-48
V2DIP1-48
IO24
Vinculum II
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V2DIP1-32
Abstract: VNC2-32Q ftdi spi example usb flash drive circuit diagram t4 3570 datasheet Vdip1 VDIP2 VNC1L VNC2
Text: Future Technology Devices International Ltd. V2DIP1-32 VNC2-32Q Development Module Datasheet Document Reference No.: FT_000163 Version 1.01 Issue Date: 2010-05-25 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom
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V2DIP1-32
VNC2-32Q
V2DIP1-32
ftdi spi example
usb flash drive circuit diagram
t4 3570 datasheet
Vdip1
VDIP2
VNC1L
VNC2
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EFE300M
Abstract: EFE400 EFE300 EFE400M EFE-300 J2/CMX7161
Text: EFE300 / EFE400 EFE300M / EFE400M AC/DC Power Supply Series APPLICATION NOTE 68892 EFE300_400 App note 4.doc Document Number 68892 Page 1 of 12 1. INPUT. 3
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EFE300
EFE400
EFE300M
EFE400M
EFE-300M
EFE-400M
EFE400
EFE400M
EFE-300
J2/CMX7161
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V2DA
Abstract: VDIP1
Text: Future Technology Devices International Ltd. V2DIP1-48 VNC2-48 Development Module Datasheet Document Reference No.: FT_000236 Version 1.0 Issue Date: 2010-04-15 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom
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V2DIP1-48
VNC2-48
895-V2DIP1-48
V2DIP1-48
V2DA
VDIP1
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Untitled
Abstract: No abstract text available
Text: Future Technology Devices International Ltd. V2DIP1-48 VNC2-48 Development Module Datasheet Document Reference No.: FT_000236 Version 1.01 Issue Date: 2010-05-24 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom
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V2DIP1-48
VNC2-48
V2DIP1-48
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Siliconix Dual N-Channel JFETs
Abstract: J210 211 siliconix
Text: Tem ic J210/211/212 Siliconix N-Channel JFETs Product Summary P a rt N um ber Vg s oK (V) V(BR)GSS ^ ' ,l ^ ; gfcM in (m S) 'I I dss Mi (mA) J210 - 1 to - 3 -25 4 2 J211 -2.5 to -4.5 -2 5 6 7 J212 —4 to - 6 -2 5 7 15 J211, For applications information seeAN104, page 12-21.
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J210/211/212
seeAN104,
J211/212,
P-37404--
P-37404--Rev.
Siliconix Dual N-Channel JFETs
J210
211 siliconix
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Untitled
Abstract: No abstract text available
Text: J/SSTJ210 Series Vishay Siliconix N-Channel JFETs J210 SSTJ211 J211 SSTJ212 J212 PRODUCT SUM M ARY Part Number VGS off (V) V (BH)GSS M in (V) 9 fs Min (mS) loss Ml*1 (mA) J2 1 0 - 1 to - 3 -2 5 4 J/S S T J211 - 2 .5 t o -4 .5 -2 5 6 7 -2 5 7 15 J /S S T J 2 1 2
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J/SSTJ210
SSTJ211
SSTJ212
J211/212,
S-04028--Rev.
04-Jun-01
S-04028--
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