transistor j210
Abstract: J210 J211 J212 marking J212
Text: DISCRETE SEMICONDUCTORS DATA SHEET J210; J211; J212 N-channel field-effect transistors Product specification File under Discrete Semiconductors, SC07 1997 Dec 01 Philips Semiconductors Product specification N-channel field-effect transistors J210; J211; J212
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SCA56
117067/00/01/pp12
transistor j210
J210
J211
J212
marking J212
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SSTJ210
Abstract: J210
Text: N-Channel JFET LLC J210 – J212 / SSTJ210 – SSTJ212 DESCRIPTION FEATURES • Low Noise • Low Leakage • High Power Gain The J210 Series is an N-Channel JFET single device encapsulated in a TO-92 plastic package well suited for automated assembly. The device features low leakage,
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SSTJ210
SSTJ212
J210-11
SSTJ210-11
OT-23
-55oC
135oC
PI10V,
SSTJ210
J210
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2N5911
Abstract: SSTJ212 transistor j210 J210 J211 J212 SSTJ211
Text: J/SSTJ210 Series Vishay Siliconix N-Channel JFETs J210 SSTJ211 J211 SSTJ212 J212 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J/SSTJ211 –2.5 to –4.5 –25 6 7 J/SSTJ212 –4 to –6 –25
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J/SSTJ210
SSTJ211
SSTJ212
J/SSTJ211
J/SSTJ212
J211/212,
18-Jul-08
2N5911
SSTJ212
transistor j210
J210
J211
J212
SSTJ211
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"Z2" marking
Abstract: No abstract text available
Text: J/SSTJ210 Series Vishay Siliconix N-Channel JFETs J210 SSTJ211 J211 SSTJ212 J212 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J/SSTJ211 –2.5 to –4.5 –25 6 7 J/SSTJ212 –4 to –6 –25
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J/SSTJ210
J/SSTJ211
J/SSTJ212
SSTJ211
SSTJ212
J211/212,
08-Apr-05
"Z2" marking
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J210
Abstract: SSTJ210 transistor j210 marking sot-23 212 s sot-23 J212 SSTJ211 SSTJ212 J210 equivalent
Text: N-Channel JFET CORPORATION J210 – J212 / SSTJ210 – SSTJ212 DESCRIPTION FEATURES • Low Noise • Low Leakage • High Power Gain The J210 Series is an N-Channel JFET single device encapsulated in a TO-92 plastic package well suited for automated assembly. The device features low leakage,
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Original
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SSTJ210
SSTJ212
J210-11
SSTJ210-11
OT-23
-55oC
135oC
J210
SSTJ210
transistor j210
marking sot-23
212 s sot-23
J212
SSTJ211
SSTJ212
J210 equivalent
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PDF
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SSTJ211
Abstract: J210 transistor j210 J211 J212 SSTJ212 SOT-23 2.D SSTJ210 marking Z2 sot23
Text: J/SSTJ210 Series Vishay Siliconix N-Channel JFETs J210 SSTJ211 J211 SSTJ212 J212 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J/SSTJ211 –2.5 to –4.5 –25 6 7 J/SSTJ212 –4 to –6 –25
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J/SSTJ210
SSTJ211
SSTJ212
J/SSTJ211
J/SSTJ212
J211/212,
S-04028--Rev.
04-Jun-01
SSTJ211
J210
transistor j210
J211
J212
SSTJ212
SOT-23 2.D
SSTJ210
marking Z2 sot23
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transistor j210
Abstract: J210 J211 J212 SSTJ211 SSTJ212
Text: J/SSTJ210 Series N-Channel JFETs J210 J211 J212 SSTJ211 SSTJ212 Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J/SSTJ211 –2.5 to –4.5 –25 6 7 J/SSTJ212 –4 to –6 –25 7 15 Features
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J/SSTJ210
SSTJ211
SSTJ212
J/SSTJ211
J/SSTJ212
J211/212,
S-52428--Rev.
14-Apr-97
transistor j210
J210
J211
J212
SSTJ211
SSTJ212
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Siliconix JFETs Dual
Abstract: transistor j210 J210 J211 J212 SSTJ211 SSTJ212
Text: J/SSTJ210 Series N-Channel JFETs J210 J211 J212 SSTJ211 SSTJ212 Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J/SSTJ211 –2.5 to –4.5 –25 6 7 J/SSTJ212 –4 to –6 –25 7 15 Features
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J/SSTJ210
SSTJ211
SSTJ212
J/SSTJ211
J/SSTJ212
J211/212,
S-52428--Rev.
14-Apr-97
Siliconix JFETs Dual
transistor j210
J210
J211
J212
SSTJ211
SSTJ212
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Untitled
Abstract: No abstract text available
Text: SIEMENS BF 599 NPN Silicon RF Transistor • Common emitter IF/RF amplifier • Low feedback capacitance due to shield diffusion Type Marking Ordering Code tape and reel BF 599 NB Q62702-F979 Pin Configuration 2 1 3 E B Package1) SOT-23 C Maximum Ratings
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OCR Scan
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Q62702-F979
OT-23
EHT07072
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PDF
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A5050
Abstract: A25100 A1831 A1231 A5062 A1527 A1237 A3775 A3181 a1535
Text: A COMPANY MODEL A W irewound Bobbin Resistors OF ULTRONIX Com m ercial/Industrial, Precision A xial Leaded, Sub-M iniature and M iniature FEATURES • • • • • • • All-welded construction Moisture-resistant encapsulation and/or molded polyester alkyd
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OCR Scan
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PDF
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Untitled
Abstract: No abstract text available
Text: Extract from the online catalog PT 2X1-BE/FM Order No.: 2920036 Base element to accept a protective plug with diagnostic and status indicator for two signal wires with common reference potential.
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TT-2009)
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J210
Abstract: No abstract text available
Text: Extract from the online catalog PT 1X2+F-BE/FM Order No.: 2920023 Base element to accept a protective plug with diagnostic and status indicator for one floating double wire, integrated spark gap to provide a
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TT-2009)
J210
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Untitled
Abstract: No abstract text available
Text: Extract from the online catalog PT 2X1+F-BE/FM Order No.: 2920049 Base element to accept a protective plug with diagnostic and status indicator for two signal wires with common reference potential,
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TT-2009)
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FZ 51
Abstract: HY 214A MC J13 "FZ 51" GK-60 GX90 GV 85 D 304 x FZ 5.1 BFP36
Text: Approve Sheet Part Number: 1.5SMCJ SERIES 3.DATA SHEET 1.5SMCJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR SMC / DO-214AB VOLTAGE - 5.0 to 220 Volts 1500 Watt Peak Power Pulse Unit: inch mm .280 (7.11) .260 (6.60) .103 (2.62) .079 (2.00) .012 (.305)
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DO-214AB
DO-214AB,
MIL-STD-750,
EIA-481)
50mVp-p
10/1000u
FZ 51
HY 214A
MC J13
"FZ 51"
GK-60
GX90
GV 85
D 304 x
FZ 5.1
BFP36
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J100
Abstract: J110 J120 "FZ 51" FZ 51 IHD-1-10 FZ 5.1 2326S K 644
Text: Approve Sheet Part Number: 3.0SMCJ SERIES 3.DATA SHEET 3.0SMCJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR SMC / DO-214AB VOLTAGE - 5.0 to 220 Volts 3000 Watt Peak Power Pulse Unit: inch mm .280 (7.11) .260 (6.60) .103 (2.62) .079 (2.00) .012 (.305)
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DO-214AB
DO-214AB,
MIL-STD-750,
EIA-481)
50mVp-p
10/1000u
J100
J110
J120
"FZ 51"
FZ 51
IHD-1-10
FZ 5.1
2326S
K 644
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smd transistor j210
Abstract: J205 J206 430kHz SMD R220 transistor j210 TS615 TS616 TS616IDW TS616IDWT
Text: TS616 Dual Wide Band Operational Amplifier with High Output Current • ■ ■ ■ ■ ■ ■ ■ ■ Low noise: 2.5 nV/√Hz High output current: 420 mA Very low harmonic and intermodulation distortion High slew rate: 420 V/µs -3dB bandwidth: 40 MHz @ gain = 12 dB
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TS616
TS616
smd transistor j210
J205
J206
430kHz
SMD R220
transistor j210
TS615
TS616IDW
TS616IDWT
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Untitled
Abstract: No abstract text available
Text: TS616 Dual wide band operational amplifier with high output current Features • Low noise: 2.5nV/√Hz ■ High output current: 420mA ■ Very low harmonic and intermodulation distortion ■ High slew rate: 420V/µs ■ -3dB bandwidth: 40MHz @ gain = 12dB on
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TS616
420mA
40MHz
TS616
410mA.
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smd transistor j210
Abstract: SMD R220 transistor j210 J205 J206 TS615 TS616
Text: TS616 Dual wide band operational amplifier with high output current Features • Low noise: 2.5nV/√Hz ■ High output current: 420mA ■ Very low harmonic and intermodulation distortion ■ High slew rate: 420V/µs ■ -3dB bandwidth: 40MHz @ gain = 12dB on
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TS616
420mA
40MHz
smd transistor j210
SMD R220
transistor j210
J205
J206
TS615
TS616
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smd transistor j210
Abstract: SMD R220 J303 transistor j210 F2230 J207 J210 smd marking f2 J205 J206
Text: TS616 Dual wide band operational amplifier with high output current Features • Low noise: 2.5 nV/√Hz ■ High output current: 420 mA ■ Very low harmonic and intermodulation distortion ■ High slew rate: 420 V/µs ■ -3dB bandwidth: 40 MHz @ gain = 12 dB on
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TS616
smd transistor j210
SMD R220
J303
transistor j210
F2230
J207
J210
smd marking f2
J205
J206
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gf 103 94vo
Abstract: J210A j170c bet GP 123 20/gf 103 94vo
Text: 1.5SMCJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR PEAK PULSE POWER 1500 Watts 5.0 to 220 Volts STAND-OFF VOLTAGE Recongnized File # E210467 0.220 5.59 0.245(6.22) • Low profile package 0.108(2.75) • For surface mounted applications in order to optimize board space.
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E210467
2002/95/EC
gf 103 94vo
J210A
j170c
bet GP 123
20/gf 103 94vo
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L 7 HL 33 GE 644
Abstract: J12A J11A mc 741 HY- 211 94V j43a hy 214 J180C J75A J220CA
Text: 1.5SMCJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR PEAK PULSE POWER 1500 Watts 5.0 to 220 Volts STAND-OFF VOLTAGE Recongnized File # E210467 FEATURES • For surface mounted applications in order to optimize board space. • Low profile package • Built-in strain relief
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E210467
2002/95/EC
DO-214AB
MIL-STD-750,
L 7 HL 33 GE 644
J12A
J11A
mc 741
HY- 211 94V
j43a
hy 214
J180C
J75A
J220CA
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MAX9590
Abstract: R20 marking C1608X7R1E104K MAX9590EVKIT MAX9590ETU J226 J236 TMK107BJ104K marking R10 10pin
Text: 19-0561; Rev 0; 5/06 MAX9590 Evaluation Kit/Evaluation System Features The MAX9590 evaluation kit EV kit is a fully assembled and tested circuit board that evaluates the MAX9590. The MAX9590 EV kit provides 14 programmable voltage references and 4 static voltage references for
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MAX9590
MAX9590.
programMAX9590
MAX9590
R20 marking
C1608X7R1E104K
MAX9590EVKIT
MAX9590ETU
J226
J236
TMK107BJ104K
marking R10 10pin
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marking code BEV
Abstract: J15-C L 7 HL 33 GE 644 J60A Bd 141 marking code GGt J36A BD 667 HY 400
Text: 1.5SMCJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR PEAK PULSE POWER 1500 Watts 5.0 to 220 Volts STAND-OFF VOLTAGE Recongnized File # E210467 0.220 5.59 0.245(6.22) • Low profile package 0.108(2.75) • For surface mounted applications in order to optimize board space.
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E210467
2002/95/EC
DO-214AB
RB500V-40
marking code BEV
J15-C
L 7 HL 33 GE 644
J60A
Bd 141
marking code GGt
J36A
BD 667
HY 400
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HY- 214 94V
Abstract: J45A J28CA j170ca HY- 211 94V J28C HY- 211 94Vo J15A J180A hy 211 94vo
Text: 1.5SMCJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR PEAK PULSE POWER 1500 Watts 5.0 to 220 Volts STAND-OFF VOLTAGE Recongnized File # E210467 0.220 5.59 0.245(6.22) • Low profile package 0.108(2.75) • For surface mounted applications in order to optimize board space.
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E210467
2002/95/EC
DO-214AB
HY- 214 94V
J45A
J28CA
j170ca
HY- 211 94V
J28C
HY- 211 94Vo
J15A
J180A
hy 211 94vo
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