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    J210 EQUIVALENT Search Results

    J210 EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    J210 EQUIVALENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor j210

    Abstract: J210 J211 J212 marking J212
    Text: DISCRETE SEMICONDUCTORS DATA SHEET J210; J211; J212 N-channel field-effect transistors Product specification File under Discrete Semiconductors, SC07 1997 Dec 01 Philips Semiconductors Product specification N-channel field-effect transistors J210; J211; J212


    Original     		PDF SCA56 117067/00/01/pp12 transistor j210 J210 J211 J212 marking J212

    SSTJ210

    Abstract: J210
    Text: N-Channel JFET LLC J210 – J212 / SSTJ210 – SSTJ212 DESCRIPTION FEATURES • Low Noise • Low Leakage • High Power Gain The J210 Series is an N-Channel JFET single device encapsulated in a TO-92 plastic package well suited for automated assembly. The device features low leakage,


    Original     		PDF SSTJ210 SSTJ212 J210-11 SSTJ210-11 OT-23 -55oC 135oC PI10V, SSTJ210 J210

    2N5911

    Abstract: SSTJ212 transistor j210 J210 J211 J212 SSTJ211
    Text: J/SSTJ210 Series Vishay Siliconix N-Channel JFETs J210 SSTJ211 J211 SSTJ212 J212 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J/SSTJ211 –2.5 to –4.5 –25 6 7 J/SSTJ212 –4 to –6 –25


    Original     		PDF J/SSTJ210 SSTJ211 SSTJ212 J/SSTJ211 J/SSTJ212 J211/212, 18-Jul-08 2N5911 SSTJ212 transistor j210 J210 J211 J212 SSTJ211

    "Z2" marking

    Abstract: No abstract text available
    Text: J/SSTJ210 Series Vishay Siliconix N-Channel JFETs J210 SSTJ211 J211 SSTJ212 J212 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J/SSTJ211 –2.5 to –4.5 –25 6 7 J/SSTJ212 –4 to –6 –25


    Original     		PDF J/SSTJ210 J/SSTJ211 J/SSTJ212 SSTJ211 SSTJ212 J211/212, 08-Apr-05 "Z2" marking

    J210

    Abstract: SSTJ210 transistor j210 marking sot-23 212 s sot-23 J212 SSTJ211 SSTJ212 J210 equivalent
    Text: N-Channel JFET CORPORATION J210 – J212 / SSTJ210 – SSTJ212 DESCRIPTION FEATURES • Low Noise • Low Leakage • High Power Gain The J210 Series is an N-Channel JFET single device encapsulated in a TO-92 plastic package well suited for automated assembly. The device features low leakage,


    Original     		PDF SSTJ210 SSTJ212 J210-11 SSTJ210-11 OT-23 -55oC 135oC J210 SSTJ210 transistor j210 marking sot-23 212 s sot-23 J212 SSTJ211 SSTJ212 J210 equivalent

    transistor j210

    Abstract: J210 Siliconix JFETs Dual Siliconix N-Channel JFETs AN104 J211 J212
    Text: J210/211/212 N-Channel JFETs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J211 –2.5 to –4.5 –25 6 7 J212 –4 to –6 –25 7 15 J211, For applications information see AN104, page 1.


    Original     		PDF J210/211/212 AN104, J211/212, P-37404--Rev. 04-Jul-94 transistor j210 J210 Siliconix JFETs Dual Siliconix N-Channel JFETs AN104 J211 J212

    SSTJ211

    Abstract: J210 transistor j210 J211 J212 SSTJ212 SOT-23 2.D SSTJ210 marking Z2 sot23
    Text: J/SSTJ210 Series Vishay Siliconix N-Channel JFETs J210 SSTJ211 J211 SSTJ212 J212 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J/SSTJ211 –2.5 to –4.5 –25 6 7 J/SSTJ212 –4 to –6 –25


    Original     		PDF J/SSTJ210 SSTJ211 SSTJ212 J/SSTJ211 J/SSTJ212 J211/212, S-04028--Rev. 04-Jun-01 SSTJ211 J210 transistor j210 J211 J212 SSTJ212 SOT-23 2.D SSTJ210 marking Z2 sot23

    transistor j210

    Abstract: J210 J211 J212 SSTJ211 SSTJ212
    Text: J/SSTJ210 Series N-Channel JFETs J210 J211 J212 SSTJ211 SSTJ212 Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J/SSTJ211 –2.5 to –4.5 –25 6 7 J/SSTJ212 –4 to –6 –25 7 15 Features


    Original     		PDF J/SSTJ210 SSTJ211 SSTJ212 J/SSTJ211 J/SSTJ212 J211/212, S-52428--Rev. 14-Apr-97 transistor j210 J210 J211 J212 SSTJ211 SSTJ212

    Siliconix JFETs Dual

    Abstract: transistor j210 J210 J211 J212 SSTJ211 SSTJ212
    Text: J/SSTJ210 Series N-Channel JFETs J210 J211 J212 SSTJ211 SSTJ212 Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J/SSTJ211 –2.5 to –4.5 –25 6 7 J/SSTJ212 –4 to –6 –25 7 15 Features


    Original     		PDF J/SSTJ210 SSTJ211 SSTJ212 J/SSTJ211 J/SSTJ212 J211/212, S-52428--Rev. 14-Apr-97 Siliconix JFETs Dual transistor j210 J210 J211 J212 SSTJ211 SSTJ212

    Siliconix AN104

    Abstract: AN104 J210 J211 J212
    Text: J210/211/212 Siliconix NĆChannel JFETs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 -1 to -3 -25 4 2 J211 -2.5 to -4.5 -25 6 7 J212 -4 to -6 -25 7 15 J211, For applications information see AN104, page 21. Features


    Original     		PDF J210/211/212 AN104, J211/212, P-37404--Rev. Siliconix AN104 AN104 J210 J211 J212

    J210 equivalent

    Abstract: No abstract text available
    Text: J210 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J210 FEATURES DIRECT REPLACEMENT FOR SILICONIX J210 HIGH GAIN gfs = 7000µmho MIN HIGH INPUT IMPEDANCE IGSS = 100pA max LOW INPUT CAPACITANCE Ciss = 5pF ABSOLUTE MAXIMUM RATINGS @ 25°C unless otherwise noted


    Original     		PDF 100pA 360mW J210 equivalent

    J210 Replacement

    Abstract: J210 J210 equivalent
    Text: J210 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J210 FEATURES DIRECT REPLACEMENT FOR SILICONIX J210 HIGH GAIN gfs = 7000µmho MIN HIGH INPUT IMPEDANCE IGSS = 100pA max LOW INPUT CAPACITANCE Ciss = 5pF ABSOLUTE MAXIMUM RATINGS @ 25°C unless otherwise noted


    Original     		PDF OT-23 100pA 360mW J210 Replacement J210 J210 equivalent

    low igss

    Abstract: J212 J211 J210 transistor j210 J210 equivalent
    Text: J210, J211, J212 LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER Linear Integrated Systems TO-92 Plastic FEATURES HIGH GAIN gfs = 7000µmho MINIMUM J211, J212 TO-92 D HIGH INPUT IMPEDANCE IGSS= 100pA MAXIMUM G LOW INPUT CAPACITANCE Ciss= 5pF TYPICAL


    Original     		PDF 100pA 360mW low igss J212 J211 J210 transistor j210 J210 equivalent

    Untitled

    Abstract: No abstract text available
    Text: J210, J211, J212 SSTJ210, SSTJ211, SSTJ212 LOW NOISE N-CHANNEL JFET GENERAL PURPOSE AMPLIFIER TO-92 TO-92 FEATURES HIGH GAIN gfs=7000µmho MINIMUM J211, J212 HIGH INPUT IMPEDENCE LOW CAPACITANCE Plastic D IGSS= 100pA MAXIMUM G CISS= 5pF TYPICAL S ABSOLUTE MAXIMUM RATINGS


    Original     		PDF SSTJ210, SSTJ211, SSTJ212 100pA OT-23 360mW SSTJ210

    Untitled

    Abstract: No abstract text available
    Text: J210, J211, J212 / SSTJ210, SSTJ211, SSTJ212 LOW NOISE N-CHANNEL JFET GENERAL PURPOSE AMPLIFIER FEATURES HIGH GAIN gfs=7000µmho MINIMUM J211, J212 HIGH INPUT IMPEDENCE LOW CAPACITANCE TO-92 IGSS= 100pA MAXIMUM CISS= 5pF TYPICAL Plastic D ABSOLUTE MAXIMUM RATINGS


    Original     		PDF SSTJ210, SSTJ211, SSTJ212 100pA 360mW OT-23 SSTJ210

    ultra low igss pA mosfet

    Abstract: ultra low igss pA j174 Transistor AND DIODE Equivalent list Ultra High Input Impedance N-Channel JFET Amplifier sd210 3n164 equivalent SST113 ULTRA LOW NOISE N-CHANNEL JFET 2N3958 equivalent
    Text: J210, J211, J212 LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER Linear Integrated Systems TO-92 Plastic FEATURES HIGH GAIN gfs = 7000µmho MINIMUM J211, J212 TO-92 D HIGH INPUT IMPEDANCE IGSS= 100pA MAXIMUM G LOW INPUT CAPACITANCE Ciss= 5pF TYPICAL


    Original     		PDF 100pA 360mW ultra low igss pA mosfet ultra low igss pA j174 Transistor AND DIODE Equivalent list Ultra High Input Impedance N-Channel JFET Amplifier sd210 3n164 equivalent SST113 ULTRA LOW NOISE N-CHANNEL JFET 2N3958 equivalent

    SS211

    Abstract: ss 211
    Text: N-Channel JFET caioqic CORPORATION J210 -J212/SST210 - SST212 FEATURES DESCRIPTION • Low Noise • Low Leakage • High Power Gain The J210 Series is an N-Channel JFE T single device encapsulated in a TO-92 plastic package well suited for automated assembly.


    OCR Scan     		PDF -J212/SST210 SST212 J210-11 SST210-11 OT-23 J210-J212/SST21 300ms, SS211 ss 211

    SST210-11

    Abstract: FL-41 J210 SST212 SST210
    Text: calocfic N-Channel JFET CORPORATION J210 - J212/SST210 - SST212 FEATURES DESCRIPTION • Low Noise • Low Leakage • High Power Gain The J210 Series is an N-Channel JFE T single device encapsulated in a TO-92 plastic package well suited for automated assembly.


    OCR Scan     		PDF J212/SST210 SST212 J210-11 SST210-11 OT-23 300ms, 443E2 FL-41 J210 SST212 SST210

    Untitled

    Abstract: No abstract text available
    Text: d o tfi1' caloqic CORPORATION N-ChannelJFET v J210 - J212/SST210 - SST212 FEATURES DESCRIPTION • Low Noise • Low Leakage • High Power Gain The J210 Series is an N-Channel JFE T single device encapsulated in a TO-92 plastic package well suited for automated assembly.


    OCR Scan     		PDF J212/SST210 SST212 J210-11 SST210-11 OT-23 1B443SB 300ms, 1A44322

    J210 equivalent

    Abstract: No abstract text available
    Text: J210 SERIES N-Channel JFETs flTSEconix in co rp o rated The J210 Series of n-channel JFETs provides good general purpose amplifiers for a wide range of test and Instrumentation applications. This series features low-leakage Iq s s < 100 pA , high gain (g*, > 7 mSfor


    OCR Scan     		PDF O-226AA) 2N5911 J210 equivalent

    Siliconix Dual N-Channel JFETs

    Abstract: J210 211 siliconix
    Text: Tem ic J210/211/212 Siliconix N-Channel JFETs Product Summary P a rt N um ber Vg s oK (V) V(BR)GSS ^ ' ,l ^ ; gfcM in (m S) 'I I dss Mi (mA) J210 - 1 to - 3 -25 4 2 J211 -2.5 to -4.5 -2 5 6 7 J212 —4 to - 6 -2 5 7 15 J211, For applications information seeAN104, page 12-21.


    OCR Scan     		PDF J210/211/212 seeAN104, J211/212, P-37404-- P-37404--Rev. Siliconix Dual N-Channel JFETs J210 211 siliconix

    Untitled

    Abstract: No abstract text available
    Text: J210. J211. J212 LINEAR SYSTEMS LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER Linear Integrated Systems FEATURES HIGH GAIN gfs = 7000 Urn ho MINIMUM J211, J212 HIGH INPUT IMPEDANCE lGSS= 100pA MAXIMUM LOW INPUT CAPACITANCE C. ISS = 5pF TYPICAL r ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF 100pA 360mW

    Untitled

    Abstract: No abstract text available
    Text: B 56 9-97 J210, J211 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • AUDIO AMPLIFIERS • GENERAL PURPOSE AMPLIFIERS Absolute maximum ratings at TA = 25°C Reverse Gate Source & Reverse Gate Drain Voltage - 25 V Continuous Forward Gate Current 10 mA


    OCR Scan     		PDF NJ26L T0-226AA

    Untitled

    Abstract: No abstract text available
    Text: J210. J211. J212 LINEAR SYSTEMS LOW NOISE N-CHANNEL J-FET G EN ERAL PURPO SE AMPLIFIER Linear Integrated Systems FEATURES HIGH GAIN = 7000^mho MINIMUM J211, J212 HIGH INPUT IMPEDANCE lQSS= 100pA MAXIMUM LOW INPUT CAPACITANCE C|88= 5pF TYPICAL ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF 100pA 360mW LISIS00075