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    J16 TRANSISTOR Search Results

    J16 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    J16 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    capacitor 4700 uF 50V

    Abstract: ELECTROLYTIC capacitor, .4700 uF 35V panasonic capacitor lot code ELECTROLYTIC capacitor, .2200 uF 35V TK Capacitors capacitor 2200 uf 25v _ 20% lot date code panasonic panasonic marking code capacitors capacitor 4700 uf 25v capacitor 3300 uF
    Text: Product Specification V type CE-VTK4-CE-0-4 Page No. Contents TK series Contents Notice matter P.1 Scope P.2 Parts Number P.2 Parts Lists P.3 ~ P.5 Can Size Table P.6 Dimensions P.7 Constructions P.8 Marking P.8 Lot No. System P.9 Standard Rating P.10 Performance Characteristics


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    K1v4

    Abstract: ELECTROLYTIC capacitor, .4700 uF 35V 6800 uF 63 V K1V47 k1v470a EE panasonic Aluminum capacitor marking date code capacitor 6800 uf EIAJ C-3 panasonic fk K1V220
    Text: Product Specification V type CE-VFKA4-CE-0-7 FK series High. temp. Pb free reflow type Page No. Contents Contents Notice matter P.1 Scope P.2 Parts Number P.2 Parts Lists P.3 ~ P.5 Can Size Table P.6 Dimensions P.7 Constructions P.8 Marking P.8 Lot No. System


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    Untitled

    Abstract: No abstract text available
    Text: 2014 CATALOG Electrolytic Capacitors (Surface Mount Type Aluminum Electrolytic Capacitors) 2014.7 industrial.panasonic.com/ww/ . Conductive Polymer Hybrid Aluminum Electrolytic Capacitors/ZA Surface Mount Type Series: ZA Type: V High temperature Lead-Free reflow


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    PDF AEC-Q200

    K/panasonic capacitors series ka

    Abstract: panasonic capacitors k series
    Text: Issue No. : CE-VFK-CE-22 Date of Issue : September 19, 2006 ENGINEERING DRAFT Product Description Customer Part Number : Aluminum Electrolytic Capacitor : Product Part Number : V type FK series Anti-Vibration type Country of Origin Marking of the Origin


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    PDF CE-VFK-CE-22 K/panasonic capacitors series ka panasonic capacitors k series

    smd transistor A7 p37

    Abstract: 11.0592mhz crystal oscillator smd led 805 MSC1210EVM transistor SMD p04 49 y6 smd transistor smd g2a schematic diagram wall-wart smd code A9 3 pin transistor msc1210 EVM board
    Text: MSC1210 Precision ADC with 8051 Microcontroller and Flash Memory Evaluation Module User’s Guide User’s Guide . 2002 Data Acquisition Products SBAU073 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any


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    PDF MSC1210 SBAU073 0592MHz MSC1210EVM. smd transistor A7 p37 11.0592mhz crystal oscillator smd led 805 MSC1210EVM transistor SMD p04 49 y6 smd transistor smd g2a schematic diagram wall-wart smd code A9 3 pin transistor msc1210 EVM board

    BLV10

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV10 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and


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    PDF BLV10 BLV10

    Untitled

    Abstract: No abstract text available
    Text: BIPOLARICS, INC. Part Number BPT10E02 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • DESCRIPTION AND APPLICATIONS: High Output Power 2 Watts @ 1.0 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 400 mA t Bipolarics' BPT10E02 is a high performance silicon bipolar transistor


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    PDF BPT10E02 BPT10E02

    SOT123 Package

    Abstract: MGP255 BLV10 MGP250
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV10 VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,


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    PDF BLV10 SC08a SOT123 Package MGP255 BLV10 MGP250

    J226 SMD

    Abstract: smd transistor j210 "Power Management IC" 13X2H battery charger schematic IC TX-2 voltmeter smd AAT2601 CMPT3904 TP10
    Text: EVALUATION BOARD DATASHEET EV-159 AAT2601 EVAL: Programmable 7-Channel Total Power Management IC for Portable Applications Introduction The AAT2601 is a member of AnalogicTech’s Total Power Management IC TPMIC™ product family; it is a completely integrated solution ideal for portable systems, which contains:


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    PDF EV-159 AAT2601 300mA EV159 J226 SMD smd transistor j210 "Power Management IC" 13X2H battery charger schematic IC TX-2 voltmeter smd CMPT3904 TP10

    WM8776

    Abstract: WM8776-EV2M J33 TRANSISTOR AES/EBU transceiver CS8427 WM8750 WM8776-EV1B LNK61
    Text: WM8776-EV2M Evaluation Board User Handbook Rev 1.3 WM8776-EV2M TABLE OF CONTENTS TABLE OF CONTENTS . 2 INTRODUCTION . 3


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    PDF WM8776-EV2M WM8776 WM8776-EV2M J33 TRANSISTOR AES/EBU transceiver CS8427 WM8750 WM8776-EV1B LNK61

    Untitled

    Abstract: No abstract text available
    Text: , Una. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BLX91A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a


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    PDF BLX91A 47ase

    WM8776

    Abstract: AES/EBU transceiver WM8776-EV1M analogue SPDIF IC WM8776-EV1B C109 CS8427 LNK413
    Text: WM8776-EV1B Evaluation Board User Handbook Rev 1.3 WM8776-EV1M TABLE OF CONTENTS INTRODUCTION .3 GETTING STARTED .3


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    PDF WM8776-EV1B WM8776-EV1M WM8776 AES/EBU transceiver WM8776-EV1M analogue SPDIF IC WM8776-EV1B C109 CS8427 LNK413

    CH848BPT

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CH848BPT SURFACE MOUNT NPN General Purpose Transistor VOLTAGE 30 Volts CURRENT 0.1 Ampere APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. FEATURE 3 (2) .055 (1.40) .047 (1.20)


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    PDF CH848BPT OT-23 OT-23) CH848BPT

    202284A

    Abstract: J226 SMD
    Text: EVALUATION BOARD DATA SHEET EV159 Evaluation Board for the AAT2601/2601A Total Power Solution for Portable Applications Introduction The AAT2601 and AAT2601A are members of Skyworks' Total Power Management IC TPMIC product family; they are completely integrated solutions ideal for portable systems, which contain:


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    PDF EV159 AAT2601/2601A AAT2601 AAT2601A 300mA 02284A 202284A J226 SMD

    tmm-104-03-t-d

    Abstract: TMS320C6711 DSK TMS320C6000 TMS320C6711 1G04 SN74CBT3257 TMS320 TMS320C5000 TMS320C5402 samtec TMM-104-03
    Text: User's Guide SLAU104B – May 2004 – Revised May 2006 5–6K Interface Board The 5-6K Interface Board provides a complete system development platform using evaluation modules from the Data Acquisition Products Group. This board passes signals from TMS320C5000 and TMS320C6000™ DSK platforms featuring the


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    PDF SLAU104B TMS320C5000TM TMS320C6000TM 80-pin TMS320 SPRA711) tmm-104-03-t-d TMS320C6711 DSK TMS320C6000 TMS320C6711 1G04 SN74CBT3257 TMS320C5000 TMS320C5402 samtec TMM-104-03

    Untitled

    Abstract: No abstract text available
    Text: PH2931-5M Radar Pulsed Power Transistor 5W, 2.9-3.1 GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 29 Jun 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation


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    PDF PH2931-5M

    tmm-104-03-t-d

    Abstract: TFM-140-32-S-D-LC 1G04 SN74CBT3257 TMS320 TMS320C5000 TMS320C5402 TMS320C6000 TMS320C6711 HEADER 2MM 20PIN
    Text: User's Guide SLAU104C – May 2004 – Revised March 2009 5–6K Interface Board The 5-6K Interface Board provides a complete system development platform using evaluation modules from the Data Acquisition Products Group. This board passes signals from TMS320C5000 and


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    PDF SLAU104C TMS320C5000TM TMS320C6000TM 80-pin TMS320 SPRA711) tmm-104-03-t-d TFM-140-32-S-D-LC 1G04 SN74CBT3257 TMS320 TMS320C5000 TMS320C5402 TMS320C6000 TMS320C6711 HEADER 2MM 20PIN

    Untitled

    Abstract: No abstract text available
    Text: u <££tni-dona\j.ctoi ZPioaucti, Line. tJ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. VHP power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,


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    PDF BLV10 OT123A

    Untitled

    Abstract: No abstract text available
    Text: PH2931-5M Radar Pulsed Power Transistor 5W, 3.1-3.1 GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 29 Jun 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation


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    PDF PH2931-5M

    Connector-J17

    Abstract: tms320c6000 dsk SN74AHC1G04 SN74AHC1G32 SN74CBT3257 TMS320 TMS320C5000 TMS320C6000 TMS320 C6713 manual c6713 schematics
    Text: 5ć6K Interface Board EVM User’s Guide May 2004 Data Acquisition Products SLAU104A IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue


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    PDF SLAU104A 12-May-2004 Connector-J17 tms320c6000 dsk SN74AHC1G04 SN74AHC1G32 SN74CBT3257 TMS320 TMS320C5000 TMS320C6000 TMS320 C6713 manual c6713 schematics

    Untitled

    Abstract: No abstract text available
    Text: E2 9-97 Japanese Equivalent JFET Types_ SILICON JUNCTION FIELD-EFFECT TRANSISTORS Japanese 2SK17 2SK40 2SK59 2SK105 InterFET IFN17 IFN40 IFN59 IFNI 05 Process NJ16 NJ16 N J16 NJ16 Unit Limit N N N N Channel Channel Channel Channel -2 0


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    PDF 2SK17 2SK40 2SK59 2SK105 IFN17 IFN40 IFN59

    Untitled

    Abstract: No abstract text available
    Text: S^ lvaS t r Ç ^ 2 * W o ^2^ ^0^ . ^ ° ' r .0 0 WVENTRONICS j J16 M O M flO E AuENUE • BOX 1 « • KEMlL WORTW, N .1 n jIL ia • PH rtN F WWJ iT i- W fW * F i * <9<W 7 n -Tf E MAIL: VEH TW O HICS e PR O D IG Y . N ET W W W . V E N TR D N IC S iN C COM


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    transistor wm

    Abstract: OC172 AF266 BLV10 TRANSISTOR K 135 J 50 7Z77760
    Text: PHILIPS INTERNATIONAL bSE D • 711Dö2b □ D b 5 7 clö T7S J IPHIN BLV10 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and


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    PDF Db57clà BLV10 76-j16 7Z78515 transistor wm OC172 AF266 BLV10 TRANSISTOR K 135 J 50 7Z77760

    P55i

    Abstract: J14-35
    Text: ^ Ä C O fl m an A M P com pany Radar Pulsed Power Transistor, 8.5W, 100|xs Pulse, 10% Duty 2.7 - 2.9 GHz PH2729-8.5M V2.00 Features • • • • • • • • NPN Silicon M icrow ave Pow er T ran sisto r C o m m o n Base C on fig u ratio n B ro a d b an d Class C O p e ratio n


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    PDF PH2729-8 P55i J14-35