CHT9013PT
Abstract: h 033 marking J2 sot-23 MARKING J3 SOT-23 J1 TRANSISTOR J3 SOT-23 transistor SOT23 J1
Text: CHENMKO ENTERPRISE CO.,LTD CHT9013PT SURFACE MOUNT NPN Silicon Transistor VOLTAGE 25Volts CURRENT 0.5 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 * HFE L :J3 * HFE(H):J2 * HFE(J):J1 .066 (1.70)
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CHT9013PT
25Volts
OT-23
OT-23)
120uA
100uA
CHT9013PT
h 033
marking J2 sot-23
MARKING J3 SOT-23
J1 TRANSISTOR
J3 SOT-23
transistor SOT23 J1
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CHT9013GP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHT9013GP SURFACE MOUNT NPN Silicon Transistor VOLTAGE 25Volts CURRENT 0.5 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 * HFE L :J3 * HFE(H):J2 * HFE(J):J1 .066 (1.70)
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CHT9013GP
25Volts
OT-23
OT-23)
120uA
100uA
CHT9013GP
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IFR7821
Abstract: IFR7821-TR R013F power supply cuk GRM31CR61E106K B320A CRCW08050000FRT1 WSL-2010-R013-F MIC2196 MIC6211-BM5
Text: MIC2196 CUK Evaluation Board Micrel MIC2196 CUK Evaluation Board 400kHz SO-8 CUK Introduction Quick-Start Guide Refer to Figure 1 for the following: 1. Connect the positive terminal from the power supply to VIN post J1 on the MIC2196 CUK evaluation board.
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MIC2196
400kHz
IFR7821
IFR7821-TR
R013F
power supply cuk
GRM31CR61E106K
B320A
CRCW08050000FRT1
WSL-2010-R013-F
MIC6211-BM5
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secos gmbh
Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers
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SGSR809-A
SC-59
SGSR809-B
SGSR809-C
SGSR809-D
SGSR809-E
secos gmbh
c945 p 331 transistor npn
SM2150AM
SM1150AM
c945 p 331 transistor
SMBJ11CA
2sd2142
SM4005A
SSG8
pzt649
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446V
Abstract: ADP221 ADP220 AN-617 200VW
Text: Dual, 200 mA, Low Noise, High PSRR Voltage Regulator ADP220/ADP221 FEATURES Mobile phones Digital cameras and audio devices Portable and battery-powered equipment Portable medical devices Post dc-to-dc regulation J1 A 1 2 EN1 VOUT1 VOUT1 = 2.8V C1 1µF U1
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ADP220/ADP221
ADP220
ADP221
D07572-0-10/09
446V
ADP221
ADP220
AN-617
200VW
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A13F
Abstract: No abstract text available
Text: R Subminiature Rectangular Inductive Prox E2S World’s Smallest Square Sensor with Built-in Amplifier H 5.5 x 5.5 mm type allows smaller, space-saving machines and devices H High response frequency 1 kHz for fast machine processes H Long sensing distance: (E2S-j1,
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1-800-55-OMRON
A13F
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adp221
Abstract: No abstract text available
Text: Dual, 200 mA, Low Noise, High PSRR Voltage Regulator ADP220/ADP221 FEATURES Mobile phones Digital cameras and audio devices Portable and battery-powered equipment Portable medical devices Post dc-to-dc regulation J1 A 1 2 EN1 VOUT1 VOUT1 = 2.8V C1 1µF U1
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ADP220/ADP221
ADP221)
081607-B
ADP220/ADP221
D07572-0-10/08
adp221
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adp221
Abstract: 07572025
Text: Dual, 200 mA, Low Noise, High PSRR Voltage Regulator ADP220/ADP221 FEATURES Mobile phones Digital cameras and audio devices Portable and battery-powered equipment Portable medical devices Post dc-to-dc regulation J1 A 1 2 EN1 VOUT1 VOUT1 = 2.8V C1 1µF U1
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ADP220/ADP221
ADP221)
081607-B
ADP220/ADP221
D07572-0-3/09
adp221
07572025
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07572025
Abstract: adp221
Text: Dual, 200 mA, Low Noise, High PSRR Voltage Regulator ADP220/ADP221 FEATURES Mobile phones Digital cameras and audio devices Portable and battery-powered equipment Portable medical devices Post dc-to-dc regulation J1 A 1 2 EN1 VOUT1 VOUT1 = 2.8V C1 1µF U1
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ADP220/ADP221
ADP221)
ADP220/ADP221
D07572-0-1/10
07572025
adp221
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mj14003
Abstract: mj14002 J14002
Text: MOTOROLA Order this document by MJ14001/D SEMICONDUCTOR TECHNICAL DATA NPN M J1 4 002* PNP High-C urrent Com plem entary Silicon Power Transistors M J14001 M J1 4 003* . . . designed for use in high-pow er amplifier and switching circuit applications, •
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MJ14001/D
J14001
MJ14001
97A-05
O-204AE
mj14003
mj14002
J14002
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Untitled
Abstract: No abstract text available
Text: B 53 9 -9 7 J1 7 6 J1 7 7 P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • CHOPPERS • COMMUTATORS • ANALOG SWITCHES A bsolute m axim um ratin gs at T* = 25°C Reverse Gate Source & Reverse Gate Drain Voltage - 30 V Continuous Forward Gate Current
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T0-226AA
Q0G0773
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Untitled
Abstract: No abstract text available
Text: h 7 > y ^ ^ / T ransistors FMG7 FMG7 11° £ * t7JU7 V - ± zl 7 J1/ 5 X ^ - J1/ K N PN V 1 J =1 > h 7 > V X ? •f ^ K v - f /V ln v e rte r Driver Epitaxial Planar Dual Mini-Mold NPN Silicon Transistor • ^tJfjTf-'iigl/'Dimensions Unit : mm • 1) X —
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MJ10006
Abstract: No abstract text available
Text: I tBbTESM MOTOROLA TECHNICAL DATA D e s ifjn o r s D a ta S h e e t 10 A M P E R E NPN SILICON SWITCHMODE SER IES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE POWER DARLINGTON TRANSISTORS T he M J1 0 0 0 6 an d M J1 0 0 0 7 Darlington transistors are design ed
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MJ10006
MJ10007
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RX1214B150W
Abstract: No abstract text available
Text: J J _ L_ _ N AMER PHILIPS/DISCRETE OLE D • I J1 J ^ O5O3J 1 3 00151Û3 T ■ RX1214B150W X T - 33^ ¡^r MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C
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bb53131
RX1214B150W
RX1214B150W
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Diode T148
Abstract: transistor 667 transistor D 667 DTA144EKA T148 marking J1
Text: FM J 1 A Transistor, digital, PNP, integral diode Features Dimensions U n its: mm • available in an SM T 5 (FMT, SC-74A) package package marking: J1 • package includes a digital PN P transistor (DTA144EKA) and a connected diode • 2.9 ± 0.2 1.9 ± 0.2
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SC-74A)
DTA144EKA)
SC-59)
47kfl
-100nA
-10mA/-5mA
100ns
Diode T148
transistor 667
transistor D 667
DTA144EKA
T148
marking J1
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siemens b 58 468 la intel 80
Abstract: siemens b 58 468 la intel 80 siemens
Text: SIEMENS ICs for Communications E1 / T1 / J1 Framer and Line Interface Component for Long and Short Haul Applications FALC 56 PEB 2256 Version 1.1 Preliminary Data Sheet 11.98 DS 1 PEB 2256 PRELIMINARY Revision History: Current Version: 11.98 Previous Version:
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SLC96
siemens b 58 468 la intel 80
siemens b 58 468 la intel 80
siemens
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Untitled
Abstract: No abstract text available
Text: SIEMENS ICs for Communications Quad Framing and Line Interface Component for E1 / T1 / J1 QuadFALC PEB 22554 Version 1.1 Preliminary Data Sheet 09.98 DS 1 PEB 22554 Revision History: Current Version: 09.98 Previous Version: None Page in previous Version
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ETS300
EASY22554:
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Untitled
Abstract: No abstract text available
Text: T O SH IB A GT1 5 J1 03 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 1 5 J 1 0 3 (S M) Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • High Input Impedance High Speed : tf=0.35^s(Max.)
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3000i
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BF840
Abstract: BF841 transistors marking ND transistors C 828
Text: BF840 BF841 IL SILICON PLANAR TRANSISTORS N -P -N transistors Marking BF840 = NC BF841 = ND PACKAGE O UTLIN E DETAILS ALL D IM EN SION S IN m m _3.0_ 2.8 0.48 0.38 0.14 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2 6 2.4 J1’ .0 2 ! 0.89 0.60 0.40
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BF840
BF841
33c14
BF840
BF841
transistors marking ND
transistors C 828
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2N2657
Abstract: 2N2658 PG1150 PG1151 PG1152 PG1153 PG1154 PG1155 PG1156 Sprague Electric
Text: 0043592 A P F E L E C T R O N IC S .2 A .0149,., D IN C - * :A P I ELECTRONICS INC 20^ DE 1 0 0 4 3 S T 2 00D014Ì 4 'J1-' INTERIM BULLETIN: Subject to Revision Without Notice -, . - 1 •* r- -*í - -.-APRIL 15,1971 POWER TRANSISTOR ^ ENGINEERING BULLETIN
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0043ST2
DDDD141
PG1150
PG1156,
2N2657
PG1151
PG1154
10MHz
300ms;
2N2658
PG1152
PG1153
PG1154
PG1155
PG1156
Sprague Electric
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MJ15025
Abstract: transistor MJ15025 MJ15023 MJ1502S mj15 1B32A
Text: ^ M O S P E C SILICON POWER TRANSISTORS PNP M J150 23 M J1 5 0 2 5 The MJ15023 and MJ15025 are power base power transistors designed for high power audio,disk head positioners and other linear applications. FEA TU RES * High Safe Operating Area * High DC Current GainhFE= 15 Min @lc= 8.0 A VCE=4.0 V
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MJ15023
MJ15025
MJ15025
MJ1502S
MJ15025-^
transistor MJ15025
mj15
1B32A
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Untitled
Abstract: No abstract text available
Text: T O SH IB A G T1 5 J1 0 3 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 1 5 J 1 0 3 (S M) Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 10.3M AX. 1.32 • • • • High Input Impedance High Speed : tf= 0.35^8 (Max.)
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MJ11017
Abstract: darlington power transistor mj11021 MJ11021 Motorola semiconductor mj11018 1N5825 MJ11018 MJ11022 MSD6100 transistor pnp 3015
Text: MOTOROLA Order this document by MJ11017/D SEMICONDUCTOR TECHNICAL DATA PNP M J11017 Com plem entary Darlington Silicon Power Transistors M J1 1 021* NPN . . . d e sig ned fo r use as ge ne ral pu rpo se am plifiers, low fre q u e n cy sw itch ing and m otor con tro l applications.
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MJ11017/D
MJ11018,
MJ11022,
MJ11017
MJ11021
MJ11018
MJ11022
MJ11022
darlington power transistor mj11021
MJ11021
Motorola semiconductor mj11018
1N5825
MSD6100
transistor pnp 3015
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D988
Abstract: BUV26F Scans-00459 0031G73 max 1988 SWITCHING SYSTEMS INTERNATIONAL 26AF BUV26AF
Text: PHILIPS INTERNATIONAL MSB D ca 711Ga5b 0Q31G73 3 Q P H I N _ BUV26F BUV26AF J1 T - 3 3 - 0 7 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a S O T 186 envelope w ith electrically isolated mounting base, intended for use in converters, inverters, switching regulators, m otor control
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711GaSb
0031G73
BUV26F
BUV26AF
T-33-07
OT186
BUV26F
711002b
D988
Scans-00459
max 1988
SWITCHING SYSTEMS INTERNATIONAL
26AF
BUV26AF
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