J03037 Search Results

J03037 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
J03037		TRW	12.5 Volt Transistors		Scan	PDF

J03037 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
trw RF POWER TRANSISTOR Abstract: trw rf transistor TRW J03037 J03037 trw rf trw transistor trw J03037 RF POWER TRANSISTOR transistor TRW TRW POWER J0303 Text: 8825024 T R W ELEK CMPNT, DE \| ö f l 5 S 0 E 4 R F OODiaTti S RF Devices Division TRW Electronic Components Group T-33-13 J03037 U H F R F Power Transistor • 20:1 V S W R • Common Emitter • Isolated Package • Internally Matched • 37 Watts • 12.5 VCC	OCR Scan	T-33-13 J03037 470MHz 470MHz trw RF POWER TRANSISTOR trw rf transistor TRW J03037 J03037 trw rf trw transistor trw J03037 RF POWER TRANSISTOR transistor TRW TRW POWER J0303	PDF
J03037 Abstract: motorola rf Power Transistor RF POWER TRANSISTOR NPN J0303 Text: MOTOROLA SC XSTRS/R F 4bE b3fci7254 D O O 'm ns T-3 1 •flOTb 3 -1 3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA J03037 The RF Line NPN Silicon UHF Power Transistor 3 7 W — 512 M H z RF PO W ER T R A N S IS T O R N P N S IL IC O N . . . des ig n e d p rim a rily fo r 12.5 V o lt w id e b a n d , larg e-sig n al a m p lifie r ap p licatio n s in	OCR Scan	b3t72SM J03037 16A-01. J03037 motorola rf Power Transistor RF POWER TRANSISTOR NPN J0303	PDF
J03037 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA J03037 The RF Line NPIM S ilicon UHF P o w e r T ran sistor 37 W — 512 MHz RF POWER TRANSISTOR NPN SILICON . . . desig n ed p rim a rily fo r 12.5 V olt w id e b an d , large-signal a m p lifie r a pp licatio n s in	OCR Scan	J03037 J03037	PDF
2N4427 equivalent bfr91 Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239 Text: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability	OCR Scan	PoweS3666 MRF3866 2N2857 2N3866 2N5943 MRF904 MRF571 2N4958 2N3160 2N5583 2N4427 equivalent bfr91 bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239	PDF
MHW721A2 Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503 Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA	OCR Scan	1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503	PDF
trw RF POWER TRANSISTOR Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid Text: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .	OCR Scan		PDF
TXD10K40 Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G Text: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40	OCR Scan	bbS3131 BLU52 1N321 BYW56 1N321A BLV97 1N322 TXD10K40 TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G	PDF