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    Microchip Technology Inc JANTX2N2484

    Bipolar Transistors - BJT Small-Signal BJT
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    Microchip Technology Inc Jan2N2484UB

    Bipolar Transistors - BJT Small-Signal BJT
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    Microchip Technology Inc Jan2N2484UB/TR

    Bipolar Transistors - BJT Small-Signal BJT
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    Microchip Technology Inc JANKCA2N2484

    Bipolar Transistors - BJT Small-Signal BJT
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    Microchip Technology Inc JAN2N2484UA

    Bipolar Transistors - BJT Small-Signal BJT
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    J 2N2484 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    J 2N2484 Thomson-CSF Condensed Data Book 1977 Scan PDF
    J2N2484 Thomson-CSF Condensed Data Book 1977 Scan PDF
    J-2N2484 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    J.2N2484 Thomson-CSF Condensed Data Book 1977 Scan PDF

    J 2N2484 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Instrumentation Amplifier IC with tl084

    Abstract: application of TL084 DIODE ON u1d ic TL074 jfet matching fixture matched pair JFET zener diode 15 v TL054 TL054A TL054ACD
    Text: TL054, TL054A ENHANCED-JFET PRECISION QUAD OPERATIONAL AMPLIFIERS SLOS038C – JUNE 1988 – REVISED AUGUST 1994 • D, J, OR N PACKAGE TOP VIEW Maximum Offset Voltage . . . 1.5 mV (TL054A) High Slew Rate . . . 15.9 V/µs Typ at 25°C Low Total Harmonic Distortion


    Original     		PDF TL054, TL054A SLOS038C TL054A) TL054ACD TL054CD TL054AID TL054ID TL054AIN TL054IN Instrumentation Amplifier IC with tl084 application of TL084 DIODE ON u1d ic TL074 jfet matching fixture matched pair JFET zener diode 15 v TL054 TL054A TL054ACD

    CI TL074

    Abstract: Instrumentation Amplifier circuit using tl084 KC182 CI TL084 amplifiers discontinued in 1996 TL054 Instrumentation Amplifier circuit with tl084 TL054ACD TL054ACN TL054AMD
    Text: TL054, TL054A ENHANCED-JFET PRECISION QUAD OPERATIONAL AMPLIFIERS SLOS038D – JUNE 1988 – REVISED AUGUST 1996 D D, J, OR N PACKAGE TOP VIEW Maximum Offset Voltage . . . 1.5 mV (TL054A) High Slew Rate . . . 15.9 V/µs Typ at 25°C Low Total Harmonic Distortion


    Original     		PDF TL054, TL054A SLOS038D TL054A) TL054 TL054A CI TL074 Instrumentation Amplifier circuit using tl084 KC182 CI TL084 amplifiers discontinued in 1996 Instrumentation Amplifier circuit with tl084 TL054ACD TL054ACN TL054AMD

    2n2484 motorola

    Abstract: 2N2484 motorola 2N2484
    Text: MOTOROLA Order this document by 2N2484/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor LAST SHIP 21/03/00 2N2484 NPN Silicon Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 3 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 60 Vdc Collector– Base Voltage


    Original     		PDF 2N2484/D 2N2484 206AA) 2N2484/D* 2n2484 motorola 2N2484 motorola 2N2484

    2N4415

    Abstract: 3N107 3N91 2N4383 2N4385 3N90 4 pin dual-emitter 2N4414A dual-emitter 2N4412
    Text: Metal-Encased Silicon SEPT" Transistors These dual-emitter PNP silicon planar epitaxial transistors DUH - .„ I DUAL EMITTER C tD T ¿Erl ings, low offset voltages, low emitter capacitances and ex- TDAMCICTADC IKANM j IU K j cellent thermal characteristics.


    OCR Scan     		PDF 2N4415 IU-10 2N4415A 100mA 500mA 800mA 2N3724 2N3725 2N4013 2N4014 3N107 3N91 2N4383 2N4385 3N90 4 pin dual-emitter 2N4414A dual-emitter 2N4412

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


    OCR Scan     		PDF

    2N4148

    Abstract: 2N3638 transistor 2N3638 Transistor 2n3005 2N2706 2N3731 2n4146 transistor 2n2706 2N4250 2N4147
    Text: DIGITRON ELECTRONIC CORP 3bE D SfiMStrO? 0□ □ □ □ □ S DGE Page #5 DIQITRON ELECTRONIC” 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 Fax J O H N J. S C H W A R T Z ENGINEERING D I G I T R O N E LE C TR ON IC S , CORP.


    OCR Scan     		PDF 2N2419A 2N3001 2N3730 2N4002 2N4140 2N4299 2N2483 2N3002 2N3731 2N4003 2N4148 2N3638 transistor 2N3638 Transistor 2n3005 2N2706 2n4146 transistor 2n2706 2N4250 2N4147

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA 2N2484JAN, JTX, JTXV Processed per MIL-S-19500^376 NPN Silicon Small-Signal Transistor CRVSTALOWCS 2BOS Veterans Highway Suite 14 0«sigfv«<j lor g a n e r ii p u rp o s e am plifier a pplications Ronkor Koma. N,y. ii 7 7 t M A XIM U M R ATIN G S


    OCR Scan     		PDF 2N2484JAN, MIL-S-19500 O-206AA

    MPSA18 BC550

    Abstract: marking 2C marking 2D BC846 National Semiconductor Discrete catalog MPSA18 BC558 BC184 BC550 tr bc548 2N3117 bc857 to 92 2N5210 national
    Text: . Low Noise Am plifiers t,8E J> r Device VcEQ «l>t (Volte) Min 65 NPN Min Max BC546 110 450 BC846 110 300 Typ T0-92(97) 1,2C 10 300 Typ TO-236* 1,2C Notes 2 75 475 2 10 300 Typ TO-92(97) 1,2C 475 2 10 300 Typ TO-236* 1,2C 100 500 0.01 3 60 2N2484 TO-18 2F


    OCR Scan     		PDF LSD113D 0D3152M BC546 T0-92 BC846 O-236* BC556 BC856 2N2484 MPSA18 BC550 marking 2C marking 2D BC846 National Semiconductor Discrete catalog MPSA18 BC558 BC184 BC550 tr bc548 2N3117 bc857 to 92 2N5210 national

    2N6429

    Abstract: J 2N2484 mpsa18 2N642B MPS-A09 2N2484 motorola 2N2483 SILICON SMALL-SIGNAL DICE MPS-6571 MPSA09
    Text: MOTOROLA SC -CDIODES/OPTOJ 6367255 MOTOROLA SC ^ * . * 3' . 34 DE J t>3fc.725S 0037T7t. □ 34C DIODES/OPTO 37976 1 SILICON SMALL-SIGNAL TRANSISTOR DICE (continued) 2C2484 DIE NO. — NPN LINE SOURCE — DMB102 This die provides performance similar to that of the following device types:


    OCR Scan     		PDF 0037T7t. DMB102 2N2483 2N2484 2N5089 2N5209 2N5210 2N642B 2N6429 MMCM2484 J 2N2484 mpsa18 MPS-A09 2N2484 motorola SILICON SMALL-SIGNAL DICE MPS-6571 MPSA09

    2N9308

    Abstract: 2N221BA 2N69S 2N3304 2M2193 2NI893 2N4080 2N236S 2N408 2N238
    Text: INTEX/ SEMITRôNICS CORP 27E D T-A 7 - 0 [ 4ñLTSMb 00DDS7Ì t J E m iE T D F l Sem itronics Corp. SEMICONDUCTORS metal can transistors silicon sm all signal transistors Msxinium Ratines Device 2N497 2N49B 2N65S 2H657 Type NPN NPN NPN NPN NPN- Package TO 5


    OCR Scan     		PDF 00DDS7Ã T-A7-01 2N497 12/3S 30/S9 2N3725A 2N3947 2N4080 2N4137 2N4207 2N9308 2N221BA 2N69S 2N3304 2M2193 2NI893 2N236S 2N408 2N238

    BCY591

    Abstract: BC109C pin configuration 2N718 pin configuration 2N706 BC107C bcy59-7 BC107c pin 2n815 2N25 BC107 pin configuration
    Text: PIN CONFIGURATION 1. Emitter 2. B ase 3. Collector DIM MIN MAX A 5,24 5,84 B 4,52 4,97 C 4,31 5,33 D 0,40 0,53 E - F - 1,27 G - 2,97 0,76 H 0,91 1,17 J K 0,71 1,21 L 45D EG 12,7 - ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN Maximum Ratings


    OCR Scan     		PDF BCY59-10 BFY76 BSX21 BSX48 BSY79 CIL351 CIL352 BCY591 BC109C pin configuration 2N718 pin configuration 2N706 BC107C bcy59-7 BC107c pin 2n815 2N25 BC107 pin configuration

    bcy5b

    Abstract: BCY591 BC179C BSX21 BC177C BCY581 2N708 2N718 2N718A 2N720
    Text: I— B PIN C O N FIG UR ATIO N 1. Emitter 2. Base 3. C ollector DIM MIN M AX A 5,24 5,84 B 4,52 4,97 C 4,31 5,33 D 0 ,40 0,53 E - 0,76 F - 1,27 G - 2,97 H 0,91 1,17 J 0,71 1,21 K 12,7 - L 45D E G ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN


    OCR Scan     		PDF 45DEG Tas25Â 2N706A BCY79-9 BCY79-10 BFX37 CF103 bcy5b BCY591 BC179C BSX21 BC177C BCY581 2N708 2N718 2N718A 2N720

    UM9C

    Abstract: J 2N930 2N2242 2N2368 2N2369 2N2369A 2N2410 2N2481 2N2501 2N2651
    Text: NPN METAL CAN «-V TYPE NO. VCB VCE V EB hFE at •c VCE - D Ë J n f l T l t B OQQQHlö 5 SATURATED SWITCH Cont'd, VCE(s) at 2 } lc fT Cob ton to ff mA MHz pF nS nS 10 0.85 0.85 1.5 150 250 400 500 50 200 6 4 4 4 11 12 12 12 - 25 15 18 18 55 V V V min ma


    OCR Scan     		PDF DDDQS16 2N2242 2N2368 2N2369 2N2369A 2N2410 N2475 2N2481 2N2501 2N2651 UM9C J 2N930 2N2651

    BSX21

    Abstract: BC107C BC10B 2N718 pin configuration 2N915 BC109C pin configuration bfy76 BSY79 BC-108 2N2221A
    Text: TO-18 P IN C O N F I G U R A T I O N 1. E m itte r 2. B a s e 3. C o lle c to r DIM MIN A 5,24 MAX 5,84 B 4,52 4,97 C 4,31 5,33 D 0,40 0,53 E - F - 0,76 1,27 G - 2,97 H 0,91 1,17 J 0,71 1,21 K 12,7 - L 45 DEG ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN


    OCR Scan     		PDF BCY59-9 BFY76 BSX21 BSX48 BSY79 CIL351 CIL352 BSX21 BC107C BC10B 2N718 pin configuration 2N915 BC109C pin configuration BC-108 2N2221A

    Untitled

    Abstract: No abstract text available
    Text: TO-18 - A • T o P IN C O N F IG U R A T IO N 1. E m itte r 2. B a s e 3 . C o lle c to r DIM MIN A 5,24 5,84 B 4,52 4,97 MAX C 4,31 5,33 D 0,40 0,53 0,76 E - F - 1,27 G - 2,97 H 0,91 1,17 J 0,71 1,21 K 12,7 L 45 DEG - ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN


    OCR Scan     		PDF 2N2221 BSX48 CIL352 BSX21 BFY76 BCY59-9 BCY59-8 BCY59-7 BCY59-10 BCY59

    Pnp transistor smd ba rn

    Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
    Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj


    OCR Scan     		PDF Q9001-1994i CMSH1-20ML Pnp transistor smd ba rn transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28

    BCY79-9

    Abstract: bcy791 BcY591 BSX21 2N706 BC107C BC109C pin configuration 2N706A 2N718A 2N720
    Text: TO-18 h - B -h ! o PIN C O N F IG U R A T IO N 1. Em itter 2. B a s e 3. Co llector DIM MIN A 5 ,2 4 M AX 5 ,8 4 B 4 ,5 2 4 ,9 7 C 4,31 5 ,3 3 D 0 ,4 0 0 ,5 3 0 ,7 6 E - F - 1,27 G - 2 ,9 7 H 0,91 1,17 J 0,71 1,21 K 12,7 - L 45 D E G ALL DIMENSIONS ARE IN M.M.


    OCR Scan     		PDF 2N706 2N706A BCY79-9 BCY79-10 BFX37 CF103 23fl33cm 000135T BCY79-9 bcy791 BcY591 BSX21 BC107C BC109C pin configuration 2N718A 2N720

    2N2483

    Abstract: 2N2484 4501 ic
    Text: II N AHER PHILIPS/DISCRETE blE D • bb53^31 0020101 Tb7 2N2483 2N2484 I SILICON PLANAR TRANSISTORS N-P-N transistors in TO -18 m etal envelopes w ith th e c o lle c to r connected to th e case. These transistors are p rim a rily intended fo r use in high perform ance, low -level, low-noise a m p lifie r


    OCR Scan     		PDF 2N2483 2N2484 500na 2N2484 4501 ic

    2N2483

    Abstract: 2N2484 J 2N2484 2N2484 manufacturer FT1215
    Text: - _ PHILIPS In t e r n a t i o n a : 2N2483 2N2484 H SILICON PLANAR TRANSISTORS N-P-N transistors in TO-18 metal envelopes w ith the collector connected to the case. These transistors are prim arily intended fo r use in high performance, low-level, low-noise am plifier


    OCR Scan     		PDF 2N2483 2N2484 711002b 0042b0b 2N2484 J 2N2484 2N2484 manufacturer FT1215

    2N2484

    Abstract: 2N2484 motorola
    Text: 2N2484* M A XIM U M RATINGS Symbol Rating Value Unit C o lle c to r -E m itte r V o lta g e VCEO 60 V dc C o lle c to r-B a s e V o lta g e VCBO 60 Vdc V dc m Adc v EBO 6 .0 C o lle c to r C u rre n t — C o n tin u o u s 'c 50 T o ta l D e v ic e D is s ip a tio n <‘ T / \ = 2 5 °C


    OCR Scan     		PDF 2N2484* 2N2484 2N2484 motorola

    12w sot23

    Abstract: transistor sot23 pf oa
    Text: Illl = ^ = Illl SEME 2N2484CSM LAB HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA D im e nsio ns in mm inches FEATURES 0.51 ±0.10 (0.02 ±0.004)


    OCR Scan     		PDF 2N2484CSM 30MHz 140kHz 12w sot23 transistor sot23 pf oa

    2N2484

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA 2N2484 NPN Silicon Small-Signal Transistor crystaloncs 2eo$ veterans Highway Suite 14 . designed tor general-purpose amplifier applications. Ronkof.koma, N.Y. 1177b, MAXIMUM RATINGS Unit Symbol Value CoRector-Emitter Voltage VCEO


    OCR Scan     		PDF 2N2484 1177b, 45Vdc)

    Untitled

    Abstract: No abstract text available
    Text: LIE » N AUER PHILIPS/DISCRETE • bbS3^3i □□eaioi Tb7 l IAPX 2N2483 2N2484 SILICON PLANAR TRANSISTORS N-P-N transistors in TO-18 metal envelopes with the collector connected to the case. These transistors are primarily intended for use in high performance, low-level, low-noise amplifier


    OCR Scan     		PDF 2N2483 2N2484 10kJ2

    Untitled

    Abstract: No abstract text available
    Text: 3Q E D Z S G S -T H O M S O N rZ ^ 7# • 7^21537 00313^ 3 ■ ^ ¿ M O , - [fôQD [Rj ô [l[L[lCT[^(Q)ÎMlD(OS_ 2 N 2 4 8 4 S G S-THOMSON LOW-LEVEL, LOW-NOISE AMPLIFIERS DESCRIPTIO N The 2N2484 is a silicon planar epitaxial NPN tran­


    OCR Scan     		PDF 2N2484 CECC50002-129 QQ31131 T-31-19