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    J 115 MOSFET Search Results

    J 115 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    J 115 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXGA 15N120C IXGP 15N120C IGBT Lightspeed Series Symbol Test Conditions VCES IC25 VCE sat = 1200 V = 30 A = 3.8 V = 115 ns tfi(typ) Maximum Ratings TO-220AB (IXGP) VCES T J = 25°C to 150°C 1200 V VCGR T J = 25°C to 150°C; RGE = 1 MW


    Original     		PDF 15N120C 15N120C O-220AB O-263

    AGRA10E

    Abstract: AGR045010 AGRA10EU JESD22-C101A 2743019446 tns capacitors
    Text: Preliminary Data Sheet January 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable


    Original     		PDF AGRA10E AGRA10E IS-95 C32/F, DS03-161RFPP DS03-038RFPP) AGR045010 AGRA10EU JESD22-C101A 2743019446 tns capacitors

    Untitled

    Abstract: No abstract text available
    Text: MMBT1031 115 mA, 60V, RDS on =7.5ȍ Elektronische Bauelemente Small Signal MOSFET RoHS Compliant Product SOT-23 N–Channel A FEATURES L 3 . Low on-resistance B S Top View . Fast switching speed 1 . Low-voltage drive V G Drain . Easily designed drive circuits


    Original     		PDF MMBT1031 OT-23 OT-23, 01-Jun-2002

    S2N7002

    Abstract: 702 mosfet
    Text: S2N7002 115 mA, 60 V, RDS ON = 7.5 Ω Elektronische Bauelemente N-Ch Small Signal MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 A FEATURES L 3 Pb-Free Package is Available 3 PACKAGING INFORMATION 1 1 K 2 E 2 Drain


    Original     		PDF S2N7002 OT-23 PARAMETER50 10Vdc 10Vdc, 500mAdc 50mAdc S2N7002 702 mosfet

    J 115 mosfet

    Abstract: No abstract text available
    Text: SGM2310A 5 A, 60 V, RDS ON 115 mΩ N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 DESCRIPTION A The SGM2310A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient


    Original     		PDF SGM2310A OT-89 SGM2310A width300 10sec. 16-Dec-2009 J 115 mosfet

    9973a

    Abstract: J 115 mosfet SSD9973A
    Text: SSD9973A N-Ch Enhancement Mode Power MOSFET 14A, 60V, RDS ON 115 mΩ mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSD9973A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely


    Original     		PDF SSD9973A SSD9973A O-252 09-Nov-2009 9973a J 115 mosfet

    Small Signal MOSFET

    Abstract: No abstract text available
    Text: S2N7002W 115 mA, 60 V, RDS ON = 7.5 Ω N-Ch Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES ♦ ♦ ♦ ♦ ♦ ♦ SOT-323 Low on-resistance Low gate threshold voltage Low input capacitance


    Original     		PDF S2N7002W OT-323 25Vdc, ID500mAdc 18-Dec-2009 Small Signal MOSFET

    SMG2310A

    Abstract: No abstract text available
    Text: SMG2310A N-Ch Enhancement Mode Power MOSFET 5.0 A, 60 V, RDS ON =115 mΩ Elektronische Bauelemente sRoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SC-59 DESCRIPTIONS A The SMG2310A utilized advanced processing techniques to achieve the


    Original     		PDF SMG2310A SC-59 SMG2310A 25Capacitance width300 24-Nov-2009

    2N7002 MARKING

    Abstract: 2N7002 MARKING 702 2N7002
    Text: WEITRON 2N7002 Small Signal MOSFET N-Channel 3 DRAIN P b Lead Pb -Free 3 1 2 1 GATE SOT-23 2 SOURCE Maximum Ratings (TA=25°C Unless Otherwise Specified) Rating Symbol Value Unit Drain Source Voltage VDSS 60 V Drain Gate Voltage(RGS = 1.0MΩ) VDGR 60 V Drain Current


    Original     		PDF 2N7002 OT-23 08-Jul-09 OT-23 2N7002 MARKING 2N7002 MARKING 702 2N7002

    2N7002T

    Abstract: Small Signal MOSFET
    Text: 2N7002T 115 mAMPS, 60VOLTS, RDS on =7.5 W Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–523 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ)


    Original     		PDF 2N7002T 60VOLTS, 01-Jun-2002 2N7002T Small Signal MOSFET

    Untitled

    Abstract: No abstract text available
    Text: 2N7002DW Dual N-Channel MOSFET 6 5 1 Features: * We declare that the material of product are Halogen Free and compliance with RoHS requirements. * ESD Protected:1000V 2 4 3 SOT-363 SC-88 3 2 1 D2 G1 S1 S2 G2 D1 4 5 6 Maximum Ratings (TA=25 C Unless Otherwise Specified)


    Original     		PDF 2N7002DW OT-363 SC-88) 13-May-2011 OT-363

    0203S

    Abstract: AGRA10XM JESD22-C101A J162 j507 MOSFET J147
    Text: Preliminary Data Sheet April 2004 AGRA10XM 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for Nordic Mobile Telephone (NMT) 460 MHz


    Original     		PDF AGRA10XM AGRA10 IS-95 DS04-139RFPP DS03-127RFPP) 0203S AGRA10XM JESD22-C101A J162 j507 MOSFET J147

    MOSFET J162

    Abstract: J473 MOSFET J147
    Text: Preliminary Data Sheet March 2004 AGRA10XM 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for Nordic Mobile Telephone (NMT) 460 MHz


    Original     		PDF AGRA10XM AGRA10 IS-95 DS03-127RFPP MOSFET J162 J473 MOSFET J147

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXTT68P20T IXTH68P20T TrenchPTM Power MOSFETs VDSS ID25 RDS on P-Channel Enhancement Mode Avalanche Rated = = ≤ - 200V - 68A Ω 55mΩ TO-268 (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXTT68P20T IXTH68P20T O-268 O-247 68P20T

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002SLT1G N–Channel SOT–23 3 • We declare that the material of product compliance with RoHS requirements. 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 60


    Original     		PDF L2N7002SLT1G 236AB) 195mm 150mm 3000PCS/Reel 8000PCS/Reel OT-723 OD-723) 10Reel/Inner

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information TrenchPTM Power MOSFET VDSS ID25 IXTR68P20T RDS on = = ≤ - 200V - 44A Ω 64mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTR68P20T ISOPLUS247 E153432 -100V 68P20T

    IXTR68P20T

    Abstract: DS100375 DS-100-375
    Text: Advance Technical Information IXTR68P20T TrenchPTM Power MOSFET VDSS ID25 RDS on = = ≤ - 200V - 44A Ω 64mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTR68P20T ISOPLUS247 E153432 68P20T IXTR68P20T DS100375 DS-100-375

    k72 diode

    Abstract: mosfet k72 K72 sot k72 transistor transistor k72 702 marking code transistor marking k72 k72 device marking marking k72 2N7002W
    Text: 2N7002W 115 mAMPS, 60VOLTS, RDS on =7.5 Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free N–Channel SOT–323 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ)


    Original     		PDF 2N7002W 60VOLTS, 01-Jun-2005 k72 diode mosfet k72 K72 sot k72 transistor transistor k72 702 marking code transistor marking k72 k72 device marking marking k72 2N7002W

    ixfx420n10t

    Abstract: IXFK420N10T MOSFET 60V 210A PLUS247
    Text: Advance Technical Information IXFK420N10T IXFX420N10T GigaMOSTM Trench HiperFETTM Power MOSFET VDSS ID25 = = 100V 420A Ω 2.6mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions


    Original     		PDF IXFK420N10T IXFX420N10T 140ns O-264 420N10T ixfx420n10t IXFK420N10T MOSFET 60V 210A PLUS247

    J 115 mosfet

    Abstract: sot-23 Marking 7002 2N7002 MARKING pin diagram of MOSFET 7002 SOT-23 mosfet 2n7002 sot-23 body marking A 4 2N7002 2N7002 Die Specification Small Signal MOSFET
    Text: 2N7002 115 mAMPS, 60VOLTS, RDS on =7.5 Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ)


    Original     		PDF 2N7002 60VOLTS, 01-Jun-2002 J 115 mosfet sot-23 Marking 7002 2N7002 MARKING pin diagram of MOSFET 7002 SOT-23 mosfet 2n7002 sot-23 body marking A 4 2N7002 2N7002 Die Specification Small Signal MOSFET

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 IXFK360N15T2 IXFX360N15T2 150V 360A Ω 4.0mΩ 150ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions


    Original     		PDF IXFK360N15T2 IXFX360N15T2 150ns O-264 360N15T2

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information GigaMOSTM Trench HiperFETTM Power MOSFET VDSS ID25 IXFK420N10T IXFX420N10T 100V 420A Ω 2.6mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions VDSS


    Original     		PDF IXFK420N10T IXFX420N10T 140ns O-264 420N10T

    AN7254

    Abstract: AN7260 ITF87052SVT SC-95 TB370 0190-S
    Text: ITF87052SVT interrii J a n u a ry . Data Sheet PRELIMINARY 3A, 20V, 0.115 Ohm, P-Channel, 2.5V Specified Power MOSFET m File Num ber i 4800.2 Features • Ultra Low On-Resistance ‘ rDS ON = 0-115£2, v q s = -4 .5 V Packaging ‘ rDS(ON) = 0-120£2, v q s = -4 .0 V


    OCR Scan     		PDF ITF87052SVT 120avGS AN7254 AN7260 ITF87052SVT SC-95 TB370 0190-S

    RFK30N12

    Abstract: C039 18198 RFH30N12 RFH30N15 Scans-00121260
    Text: 3 8 7 5 0 8 T gT E ~ S O L Í D Standard Power MOSFETs 3 ñ 7 5 D ñ i DI G E S O LI » STATE STATE 0 1E o a i a n 3 18193 a D iT - ^ - '/S ’ _ RFH30N12, RFH30N15 File N u m b e r 1633 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode


    OCR Scan     		PDF RFH30N12, RFH30N15 9ZCS-53741 RFH30N12 RFH30N15* JCS-176S7 RFK30N12, RFK30N15 92CS-36Z32 92CS-362S3 RFK30N12 C039 18198 RFH30N15 Scans-00121260