IXGP70N33
Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim
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D-68623
IXBOD1-08
IXBOD1-09
IXBOD1-10
DSEP30-06BR
DSEP30-12CR
IXGP70N33
IXGQ90N33
SK0604
IXTP76N075
IXER35N120D1
IXGP70N33TBM-A
DH60-18A
VBO19
SK0712
IXTH1N250
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DPG20C300PB
Abstract: DPG20C300PN
Text: DPG20C300PN HiPerFRED² VRRM = 300 V I FAV = 2x 10 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DPG20C300PN Backside: isolated 1 2 3 Features / Advantages: Applications: Package: TO-220FP ● Planar passivated chips
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DPG20C300PN
O-220FP
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DPG20C300PB
DPG20C300PN
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DPG20C300PB
Abstract: DPG20C300PN
Text: DPG20C300PB HiPerFRED² VRRM = 300 V I FAV = 2x 10 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DPG20C300PB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-220 ● Planar passivated chips
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DPG20C300PB
O-220
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DPG20C300PB
DPG20C300PN
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DPG20C300PB
Abstract: DPG20C300PN
Text: DPG 20 C 300 PB V RRM = 300 V I FAV = 2x 10 A t rr = 35 ns HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips
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DPG20C300PN
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DPG20C300PN
Abstract: DPG20C300PB dpg20c300 IXYS DPG20C300PN datasheet IXYS DPG20C300PN DIODE PN junction diode
Text: DPG 20 C 300 PN V RRM = 300 V I FAV = 2x 10 A t rr = 35 ns HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DPG 20 C 300 PN Backside: isolated Features / Advantages: Applications: Package: ● Planar passivated chips
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DPG20C300PB
dpg20c300
IXYS DPG20C300PN datasheet
IXYS DPG20C300PN
DIODE PN junction diode
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dpg20c300
Abstract: DPG20C300PN DPG20C300PB t 3866 power transistor t 3866
Text: DPG 20 C 300 PB V RRM = 300 V I FAV = 2x 10 A t rr = 35 ns HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DPG 20 C 300 PB Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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dpg20c300
DPG20C300PN
DPG20C300PB
t 3866 power transistor
t 3866
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pn junction diode
Abstract: DPG20C300PB DPG20C300PN
Text: DPG 20 C 300 PN V RRM = 300 V I FAV = 2x 10 A t rr = 35 ns HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 Backside: isolated Features / Advantages: Package: Applications: Planar passivated chips
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pn junction diode
DPG20C300PB
DPG20C300PN
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irfb4115
Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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element-14
F155-6A
F155-10A
F165-15A
F175-25A
irfb4115
BTY79 equivalent
diode skn 21-04
marking CODE W04 sot-23
bbc 598 479 DIODE
mw 137 600g
TFK 401 S 673
Vishay Telefunken tfk transistor
INFINEON transistor marking W31
JYs marking transistor
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