EVLD02
Abstract: IXDD415SI PUSH PULL MOSFET DRIVER dip IXLD02SI IXDD DEIC420 IXDD414CI RF MOSFETs 10mhz mosfet EVDN404
Text: MOSFET DRIVER IC'S SWITCH MODE POWER SUPPLIES & RF GENERATORS January 2003 These ultra-fast high current drivers are optimized to drive IXYS RF MOSFETs and IXYS IGBTs for high efficiency performance in RF generators, laser diode drivers, pulse generators, motor drive and power conversion applications. They
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O-263
O-220
DEIC420
45MHz.
EVDD404
EVDF404
EVLD02
IXDD415SI
PUSH PULL MOSFET DRIVER dip
IXLD02SI
IXDD
IXDD414CI
RF MOSFETs
10mhz mosfet
EVDN404
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bod ixys
Abstract: IXYS IXBOD
Text: Breakover Diodes Applications ● Transient voltage protection High-voltage switches ● Crowbar ● Lasers ● Pulse generators ● i IH IBO V VH VBO H 1999 IXYS All rights reserved H-1 IXBOD 1 -06.10 Single Breakover Diode VBO Standard V Types VBO = 600-1000V
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00-1000V
035x2mm)
bod ixys
IXYS IXBOD
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IXYS Colorado Introduces EVLD02-II Evaluation Board for the IXLD02SI Laser Diode Driver IC
Abstract: EVLD02-II IXLD02SI laser diode driver ic Directed Energy industrial pulse generators schematic EVLD02 Laser Diode driver
Text: FOR IMMEDIATE RELEASE Contact: Yvonne Clark IXYS Colorado Directed Energy, Inc. Tel: (970) 493-1901 ext. 26 IXYS Colorado Introduces EVLD02-II Evaluation Board for the IXLD02SI Laser Diode Driver IC Fort Collins, CO. July 13, 2010. IXYS Corporation (NASDAQ IXYS), a leader in power
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EVLD02-II
IXLD02SI
IXYS Colorado Introduces EVLD02-II Evaluation Board for the IXLD02SI Laser Diode Driver IC
laser diode driver ic
Directed Energy
industrial pulse generators schematic
EVLD02
Laser Diode driver
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40N60SCD1
Abstract: ixkf40n60scd1 IXYS DS 145
Text: IXKF 40N60SCD1 CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 41 A RDS on) typ. = 60 mΩ trr = 70 ns with Series Schottky Diode and Ultra Fast Antiparallel Diode in High Voltage ISOPLUS i4-PAC™ ISOPLUS i4-PAC™ 5 DS Preliminary data 1 DF 1 T 2 5 E72873
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40N60SCD1
E72873
20110201b
40N60SCD1
ixkf40n60scd1
IXYS DS 145
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IXYS CORPORATION
Abstract: MTI85W100GC CLB30I1200HB 200WX75GD Thyristor 12kV 10 kA MTI200WX75GD AGT ssr up/MTI85W100GC MTI relay CMA30E1600PZ
Text: NEWS PCIM 2013 IXYS Efficiency through Technology ComPack Thyristor Module Platform A new Design that reduces Parts and Material Costs with Higher Power Density has a 33% reduced footprint and weight 67% less than current alternatives, significantly illustrating how IXYS’ MORE POWER, LESS
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DMA10P1600PZ
/1600V)
CMA50E1600TZ
DSP45-16TZ
O-263
D-68623
CH-2555
IXYS CORPORATION
MTI85W100GC
CLB30I1200HB
200WX75GD
Thyristor 12kV 10 kA
MTI200WX75GD
AGT ssr
up/MTI85W100GC
MTI relay
CMA30E1600PZ
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Untitled
Abstract: No abstract text available
Text: IXKF 40N60SCD1 CoolMOS 1 Power MOSFET VDSS ID25 RDS on) typ. trr with Series Schottky Diode and Ultra Fast Antiparallel Diode = 600 V = 41 A = 60 m = 70 ns in High Voltage ISOPLUS i4-PAC™ ISOPLUS i4-PAC™ 5 DS DF Preliminary data 1 1 2 T 5 E72873 2
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40N60SCD1
E72873
20110201b
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SOT227B package
Abstract: DSA300 SMPS Solar Battery chargers ixys DSA300I100NA DSA300I200NA DSA300I45NA ups over smps advantages
Text: FOR IMMEDIATE RELEASE Contacts: Bradley Green, IXYS Switzerland, Tel: +41 32 374 4020 Ronnie Ganitano, IXYS Corporation, Tel: 408-457-9000 IXYS Introduces Its Largest Single Die Schottky Diode For Increased Efficiency In Power Rectification Biel, Switzerland, October 14, 2010 – IXYS Corporation NASDAQ: IXYS , a leader in power
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OT-227B)
SOT227B package
DSA300
SMPS Solar Battery chargers
ixys
DSA300I100NA
DSA300I200NA
DSA300I45NA
ups over smps advantages
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2x81-0045
Abstract: 70008A DSS2X160-01A 2x160 DSS2*160 6Y045AS 80-0045B 60-0045B 2x121 DSS 2x160-01A
Text: Power Schottky Rectifier Diodes Schottky Diodes Contents 1 TO-220 AC 2 3 A 1 15 20 6 6 15 15 2x 20 2x 35 1 25 25 2 6 25 25 2x 25 2x 25 TO-263 AB TO-252 AA TO-247 AD 6 V Circuit Diagram Page D4- 0.33 DSS 20 B 4 0.32 DSSK 40 0.33 DSSK 70 B B 6 8 0.44 DSS 25
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O-220
2x81-0045
70008A
DSS2X160-01A
2x160
DSS2*160
6Y045AS
80-0045B
60-0045B
2x121
DSS 2x160-01A
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Q817C
Abstract: q817 DSS2-60AT2 IPS18 IPS-DK18 FERRITE core ee TRANSFORMER dss2 IPS18C 1N4148 1N4743A
Text: D E S I G N K I T / E VA L U AT I O N S Y S T E M – A P P L I C AT I O N T O O L B R I E F N E W A P P L I C A T I O N T O O L B R I E F IPS-DK18 / EVPS001 Schematic EI/EE CORE FERRITE TRANSFORMER 13MM L1 Design Kit and Evaluation System: 5W to 10W Ultra-Green Power Supply
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IPS-DK18
EVPS001
330uH
DSS2-60AT2
180pF
1N4148
100uF
10MEG
A/600V
IXTY1R4N60P
Q817C
q817
DSS2-60AT2
IPS18
FERRITE core ee TRANSFORMER
dss2
IPS18C
1N4148
1N4743A
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VUM33-06PH
Abstract: 33-06PH vum33 Fast Recovery Bridge Rectifier, 60A, 600V
Text: VUM 33-06PH Power MOSFET Stage for Boost Converters Single Phase Rectifier Boost Diode MOSFET VRRM = 1600 V VRRM = 600 V VDSS = 600 V IDAV = 106 A IF25 Module for Power Factor Correction = 60 A ID25 = 50 A IFSM = 300 A VF 30A = 2.24 V RDS(on) = 120 mΩ Part name (Marking on product)
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33-06PH
VUM33-06PH
20100921b
VUM33-06PH
33-06PH
vum33
Fast Recovery Bridge Rectifier, 60A, 600V
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IXAN0065
Abstract: IXTQ130N10T mosfet ixys
Text: IXYS Power MOSFET Datasheet Parameters Definition Abdus Sattar, IXYS Corporation IXAN0065 IXYS provides datasheets with parameters that are essential and useful for selecting the appropriate device as well as for predetecting its performance in an application. The graphs included in the datasheet represent typical performance
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IXAN0065
IXTH/IXTQ130N10T"
IXAN0065
IXTQ130N10T
mosfet ixys
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single phase UPS 230V
Abstract: 230v ac dc smps circuit
Text: VUM 85-05A Advanced Technical Information VDSS = 500 V ID25 = 140 A Ω RDS on = 33 mΩ Rectifier Module for Three Phase Power Factor Correction VRRM (Diode) VDSS V V 500 500 Symbol Type VUM 85-05A Conditions Maximum Ratings Features MOSFET T 1 VDSS VGSM
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5-05A
D-68623
single phase UPS 230V
230v ac dc smps circuit
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UL758
Abstract: No abstract text available
Text: VMM 650-01F VDSS Dual Power HiPerFETTM Module ID25 RDS on = 100 V = 680 A Ω = 1.8 mΩ Phaseleg Configuration Preliminary Data Features MOSFET T1 + T2 Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 100 V ±20 V ID25 ID80 TC = 25°C TC = 80°C
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650-01F
UL758,
ZY180L
350mm
ZY180R
D-68623
UL758
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ZY180L
Abstract: ZY180R
Text: VMM 1500-0075T2 VDSS = 75 V ID25 = 1500 A Ω RDS on = 0.5 mΩ Dual Power MOSFET Module Phaseleg Configuration Gate Control Pins 8 9 1 11 2 10 Features MOSFET T1 + T2 Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 75 V ±20 V ID25 ID80 TC = 25°C
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1500-0075T2
ZY180L
ZY180R
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Untitled
Abstract: No abstract text available
Text: VUM 33-06PH Power MOSFET Stage for Boost Converters Single Phase Rectiier Boost Diode VRRM = 1600 V VRRM Module for Power Factor Correction MOSFET = 600 V VDSS 60 A ID25 = 600 V = A IDAV = 106 A IF25 IFSM = 300 A VF 30A = 2.24 V RDS(on) = 120 m = 50 Part name (Marking on product)
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33-06PH
VUM33-06PH
20100921b
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Untitled
Abstract: No abstract text available
Text: VUM 33-06PH Power MOSFET Stage for Boost Converters Single Phase Rectifier Boost Diode MOSFET VRRM = 1600 V VRRM = 600 V VDSS = 600 V IDAV = 106 A IF25 Module for Power Factor Correction = 60 A ID25 = 50 A IFSM = 300 A VF 30A = 1.9 V RDS(on) = 120 mΩ Part name (Marking on product)
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33-06PH
VUM33-06PH
20100611a
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Untitled
Abstract: No abstract text available
Text: DSSK18-0025BS preliminary V RRM = 25 V I FAV = 2x 10 A V F = 0.37 V Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 Backside: cathode Applications: Features / Advantages: Rectifiers in switch mode power
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DSSK18-0025BS
O-263
DSB30C30PB
O-220
60747and
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IXYS IXBOD
Abstract: lt 747 bod ixys
Text: D IX Y S Breakover Diodes Applications • Transient voltage protection • High-voltage switches • Crowbar • Lasers • Pulse generators o- 1998 IXYS All rights reserved H -1 mmm IXBOD 1 -06.10 1A. X U Single Breakover Diode =600 - 1000V ^AVM ”
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035x2m
IXYS IXBOD
lt 747
bod ixys
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Untitled
Abstract: No abstract text available
Text: □ IXYS Preliminary Data Sheet High Voltage IGBT with Diode IXSX35N120AU1 V IXSX35N120All 1S I Combi Pack Short Circuit SOA Capability CES 1200 V 70 A C25 V 4V CE SAT PLUS TO-247 SMD (IXSX35N120AU1S) Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C
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IXSX35N120AU1
IXSX35N120All
O-247â
IXSX35N120AU1S)
IXSX35N120AU1S
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Untitled
Abstract: No abstract text available
Text: □ IXYS Low VCE sal IGBT with Diode High speed IGBT with Diode IXGH 10 N100U1 IXGH 10 N100AU1 V CES ^C25 V CE(sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions vw CES T, = 25°C to 150°C 1000 V V CGR Tj = 25°C to 150°C; RaE = 1 M£2
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N100U1
N100AU1
O-247
10N100U1
10N100AU1
4bflb22b
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Untitled
Abstract: No abstract text available
Text: □ IXYS Preliminary Data Sheet High Voltage IGBT with Diode IXSK35N120AU1 VCES I Maximum Ratings Symbol Test Conditions VCES VCGR v GES vGEM Td = 25°C to 150°C 1200 V Td = 25°C to 150°C; RGE = 1 M£i 1200 V Continuous ±20 V Transient ±30 V ^C25 Tc = 25°C
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IXSK35N120AU1
O-26re
IXSK35N120AU1
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jvv diode
Abstract: IXDN 50N120AU1 50N120AU1 IXDN50N120AU1 0504N
Text: □ IXYS High Voltage IGBT with Diode IXDN 50N120AU1 V CES 1200 V ^C25 70 A V CE sat typ 2.5 V Short Circuit SOA Capability Preliminary Data Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C 1200 V V CGR Td = 25°C to 150°C; RGE = 1 M£i
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50N120AU1
OT-227
jvv diode
IXDN 50N120AU1
IXDN50N120AU1
0504N
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0504N
Abstract: No abstract text available
Text: □ IXYS High Voltage IGBT with Diode IXDN 55N120AU1 Short Circuit SOA Capability V CES 1200 V ^C25 85 A V C E sat typ 2.5 V Preliminary Data Maximum Ratings Symbol Test Conditions v CES VCGR T j = 25°C to 150°C 1200 V T j = 25°C to 150°C; RGE = 1 M£i
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55N120AU1
OT-227
0504N
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55N120D1
Abstract: ixdn 30 n 120 d1
Text: □ IXYS IXDN 55N120 IXDN 55N120 D1 High Voltage IGBT with optional Diode V CES 1200 V 100 A 2.3 V ^C25 V CE sat typ S hort C ircuit SO A Capability Square RBSOA IX D N 5 5 N 1 2 0 Preliminary Data IX D N 5 5 N 1 2 0 D1 miniBLOC, SOT-227 B E153432 E Symbol
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55N120
55N120
OT-227
E153432
55N120D1
ixdn 30 n 120 d1
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