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    IXXH50N60C3D1 Price and Stock

    IXYS Corporation IXXH50N60C3D1

    IGBT PT 600V 100A TO-247AD
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    DigiKey IXXH50N60C3D1 Tube 300
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    Mouser Electronics IXXH50N60C3D1 23
    • 1 $9.88
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    Future Electronics IXXH50N60C3D1 Tube 300
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    TTI IXXH50N60C3D1 Tube 690 30
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    TME IXXH50N60C3D1 1
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    PUI IXXH50N60C3D1 150 12 Weeks 30
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    Littelfuse Inc IXXH50N60C3D1

    Transistor, Igbt, 600V, 100A, To-247Ad; Continuous Collector Current:100A; Collector Emitter Saturation Voltage:1.95V; Power Dissipation:600W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Littelfuse IXXH50N60C3D1
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    Newark IXXH50N60C3D1 Bulk 322 1
    • 1 $7.09
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    • 1000 $6.19
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    IXXH50N60C3D1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXXH50N60C3D1 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 100A 600W TO247AD Original PDF

    IXXH50N60C3D1 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    50n60c3

    Abstract: 50n60c IXXH50N60C3D ixxh50n60c3d1 12v to 230v inverters circuit 12v to 230v inverters circuits 12v to 230v SMPS inverters circuits 3842IC IXXH50N60C3 IF110
    Text: Advance Technical Information IXXH50N60C3D1 XPTTM 600V GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 50A 2.30V 42ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ


    Original     		IXXH50N60C3D1 IC110 O-247 IF110 50N60C3 50n60c IXXH50N60C3D ixxh50n60c3d1 12v to 230v inverters circuit 12v to 230v inverters circuits 12v to 230v SMPS inverters circuits 3842IC IXXH50N60C3 IF110 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information XPTTM 600V GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH50N60C3D1 Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 50A 2.30V 42ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ


    Original     		IC110 IXXH50N60C3D1 O-247 IF110 50N60C3 PDF

    50N60C3

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXXH50N60C3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 50A 2.30V 42ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C


    Original     		IXXH50N60C3D1 IC110 O-247 IF110 50N60C3 PDF