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    IXTV18N60P Search Results

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    IXTV18N60P Price and Stock

    IXYS Corporation IXTV18N60P

    MOSFET N-CH 600V 18A PLUS220
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    IXTV18N60P Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXTV18N60P IXYS PolarHV Power MOSFET N-Channel Enhancement Mode Original PDF
    IXTV18N60PS IXYS PolarHV Power MOSFET N-Channel Enhancement Mode Original PDF

    IXTV18N60P Datasheets Context Search

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    IXTV18N60P

    Abstract: PLUS220SMD
    Text: IXTQ 18N60P IXTV 18N60P IXTV 18N60PS PolarHVTM Power MOSFET VDSS ID25 = 600 V = 18 A ≤ 400 mΩ Ω RDS on N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous


    Original     		PDF 18N60P 18N60PS PLUS220 IXTV18N60P 2005IXYS IXTV18N60P PLUS220SMD

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


    Original     		PDF D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250