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    IXTT1N450HV Search Results

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    IXTT1N450HV Price and Stock

    Littelfuse Inc IXTT1N450HV

    MOSFET N-CH 4500V 1A TO268
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTT1N450HV Tube 1
    • 1 $43.97
    • 10 $43.97
    • 100 $34.431
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    • 10000 $34.431
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    Verical IXTT1N450HV 300 2
    • 1 -
    • 10 $48.804
    • 100 $48.804
    • 1000 $48.804
    • 10000 $48.804
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    Newark IXTT1N450HV Bulk 289 1
    • 1 $48.8
    • 10 $44.85
    • 100 $40.9
    • 1000 $40.9
    • 10000 $40.9
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    Quest Components IXTT1N450HV 240
    • 1 $78.16
    • 10 $78.16
    • 100 $60.574
    • 1000 $58.62
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    CoreStaff Co Ltd IXTT1N450HV 300
    • 1 $43.96
    • 10 $39.08
    • 100 $39.08
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    IXYS Corporation IXTT1N450HV

    MOSFETs 4500V 1A HV Power MOSFET
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    Mouser Electronics IXTT1N450HV 166
    • 1 $48.81
    • 10 $43.87
    • 100 $40.51
    • 1000 $39.59
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    Future Electronics IXTT1N450HV Tube 12,120 44 Weeks 30
    • 1 -
    • 10 -
    • 100 $36.63
    • 1000 $36.45
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    TTI IXTT1N450HV Tube 300
    • 1 -
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    • 100 -
    • 1000 $37.17
    • 10000 $37.17
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    TME IXTT1N450HV 1
    • 1 $62.58
    • 10 $49.78
    • 100 $44.7
    • 1000 $44.7
    • 10000 $44.7
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    IXTT1N450HV Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTT1N450HV IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 4500V 1A TO268 Original PDF

    IXTT1N450HV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IXTT1N450HV High Voltage Power MOSFET VDSS ID25 RDS on = 4500V = 1A   85 N-Channel Enhancement Mode TO-268HV G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 4500 V VDGR TJ = 25C to 150C, RGS = 1M 4500 V VGSS Continuous


    Original     		PDF IXTT1N450HV O-268HV 100ms 1N450 2-13-A

    Untitled

    Abstract: No abstract text available
    Text: IXTT1N450HV High Voltage Power MOSFET VDSS ID25 RDS on = 4500V = 1A   80 N-Channel Enhancement Mode TO-268HV G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 4500 V VDGR TJ = 25C to 150C, RGS = 1M 4500 V VGSS Continuous


    Original     		PDF IXTT1N450HV O-268HV 100ms 1N450 H7-P640

    Untitled

    Abstract: No abstract text available
    Text: IXTT1N450HV IXTH1N450HV High Voltage Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode = 4500V = 1A   80 TO-268HV (IXTT) G S D (Tab) Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 4500 V VDGR TJ = 25C to 150C, RGS = 1M


    Original     		PDF IXTT1N450HV IXTH1N450HV O-268HV 100ms 1N450 H7-P640

    DS100500

    Abstract: No abstract text available
    Text: Advance Technical Information IXTT1N450HV High Voltage Power MOSFET VDSS ID25 RDS on = 4500V = 1A Ω ≤ 85Ω N-Channel Enhancement Mode TO-268 (IXTT) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 4500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTT1N450HV O-268 100ms 100ms 1N450 DS100500