Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXTR90P10P Search Results

    SF Impression Pixel

    IXTR90P10P Price and Stock

    IXYS Corporation IXTR90P10P

    MOSFET P-CH 100V 57A ISOPLUS247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTR90P10P Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now
    TME IXTR90P10P 1
    • 1 $8.81
    • 10 $7
    • 100 $6.29
    • 1000 $6.29
    • 10000 $6.29
    Get Quote

    IXTR90P10P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXTR90P10P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 100V 57A ISOPLUS247 Original PDF

    IXTR90P10P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IXTR90P10P PolarPTM Power MOSFET VDSS = ID25 = RDS on ≤ D P-Channel Enhancement Mode Avalanche Rated - 100V - 57A Ω 27mΩ G ISOPLUS247 E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original
    PDF IXTR90P10P ISOPLUS247 E153432 100ms 90P10P

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarPTM Power MOSFET IXTR90P10P VDSS ID25 RDS on = = ≤ - 100V - 57A Ω 27mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 (IXTR) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 100 V


    Original
    PDF IXTR90P10P ISOPLUS247 E153432 100ms 90P10P

    ISOPLUS247

    Abstract: No abstract text available
    Text: IXTR90P10P PolarPTM Power MOSFET VDSS = ID25 = RDS on ≤ - 100V - 57A Ω 27mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original
    PDF IXTR90P10P ISOPLUS247 E153432 100ms 90P10P ISOPLUS247

    Untitled

    Abstract: No abstract text available
    Text: PolarPTM Power MOSFET VDSS = ID25 = RDS on ≤ IXTR90P10P - 100V - 57A Ω 27mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original
    PDF IXTR90P10P ISOPLUS247 E153432 100ms 90P10P

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original
    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    p-CHANNEL POWER MOSFET 600v

    Abstract: IXTH20P50P IXTP28P065T 014 IR MOSFET Transistor P channel MOSFET 10A ixtq IXTA36P15P IXTA76P10T IXTH16P60P IXTK32P60P
    Text: NEW PRO D U CT B RIEF Introducing P-Channel Power MOSFETs next generation p-channel power mosfets -50v to -600v SEPTEMBER 2008 OVERVIEW IXYS has reinforced its P-Channel Power MOSFET portfolio with the introduction of two advanced new families; TrenchPTM and PolarPTM. These families take


    Original
    PDF -600v -150V p-CHANNEL POWER MOSFET 600v IXTH20P50P IXTP28P065T 014 IR MOSFET Transistor P channel MOSFET 10A ixtq IXTA36P15P IXTA76P10T IXTH16P60P IXTK32P60P