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    IXTQ36P15P Price and Stock

    Littelfuse Inc IXTQ36P15P

    MOSFET P-CH 150V 36A TO3P
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    DigiKey IXTQ36P15P Tube 1
    • 1 $7.27
    • 10 $7.27
    • 100 $5.80033
    • 1000 $4.57908
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    Newark IXTQ36P15P Bulk 300
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    • 1000 $3.96
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    IXYS Corporation IXTQ36P15P

    MOSFETs -36.0 Amps -150V 0.110 Rds
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    Mouser Electronics IXTQ36P15P
    • 1 $7.28
    • 10 $7.27
    • 100 $5.81
    • 1000 $5.19
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    TTI IXTQ36P15P Tube 300
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    TME IXTQ36P15P 1
    • 1 $6.72
    • 10 $5.34
    • 100 $4.8
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    IXYS Integrated Circuits Division IXTQ36P15P

    MOSFET DIS.36A 150V P-CH TO3P POLARP THT
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    Ozdisan Elektronik IXTQ36P15P
    • 1 $6.74146
    • 10 $6.74146
    • 100 $6.1286
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    IXTQ36P15P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXTQ36P15P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 150V 36A TO-3P Original PDF

    IXTQ36P15P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    36p15

    Abstract: IXTP36P15P 3-26-08-B
    Text: Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA36P15P IXTP36P15P IXTQ36P15P S G D TAB G D (TAB) D S Test Conditions VDSS TJ = 25°C to 150°C - 150 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 150 V VGSS


    Original     		PDF O-263 IXTA36P15P IXTP36P15P IXTQ36P15P O-220 100ms 36P15P 36p15 3-26-08-B

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA36P15P IXTP36P15P IXTQ36P15P S G D TAB = = ≤ RDS(on) - 150V - 36A Ω 110mΩ TO-3P (IXTQ) TO-220 (IXTP) TO-263 (IXTA) G VDSS ID25 G D(TAB) D S Symbol Test Conditions


    Original     		PDF IXTA36P15P IXTP36P15P IXTQ36P15P O-220 O-263 100ms IXTA36P15P 36P15P

    Untitled

    Abstract: No abstract text available
    Text: PolarPTM Power MOSFET IXTA36P15P IXTP36P15P IXTH36P15P IXTQ36P15P P-Channel Enhancement Mode Avalanche Rated TO-263 IXTA G VDSS = ID25 = RDS(on) ≤ TO-220 (IXTP) S D (TAB) G TO-247 (IXTH) D (TAB) D S G Symbol Test Conditions VDSS TJ = 25°C to 150°C - 150


    Original     		PDF IXTA36P15P IXTP36P15P IXTH36P15P IXTQ36P15P O-263 O-220 O-247 100ms

    36P15

    Abstract: IXTA36P15P IXTP36P15P to-247 to-220 to-3p IXTQ36P15P IXTH36P15P 3-26-08-B 36P15P TO263
    Text: PolarPTM Power MOSFET IXTA36P15P IXTP36P15P IXTH36P15P IXTQ36P15P P-Channel Enhancement Mode Avalanche Rated TO-263 IXTA G VDSS = = ID25 RDS(on) ≤ TO-220 (IXTP) S D (TAB) G - 150V - 36A Ω 110mΩ TO-247 (IXTH) D (TAB) D S G Symbol Test Conditions VDSS


    Original     		PDF IXTA36P15P IXTP36P15P IXTH36P15P IXTQ36P15P O-263 O-220 O-247 100ms 36P15 IXTA36P15P IXTP36P15P to-247 to-220 to-3p IXTQ36P15P IXTH36P15P 3-26-08-B 36P15P TO263

    IXTA36P15P

    Abstract: No abstract text available
    Text: PolarPTM Power MOSFETs IXTA36P15P IXTP36P15P IXTQ36P15P IXTH36P15P P-Channel Enhancement Mode Avalanche Rated TO-263 AA IXTA VDSS = = ID25 RDS(on) ≤ TO-220AB (IXTP) TO-3P (IXTQ) G S G D (Tab) G D DS D (Tab) Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXTA36P15P IXTP36P15P IXTQ36P15P IXTH36P15P O-263 O-220AB O-247 100ms IXTA36P15P

    to-247 to-220 to-3p

    Abstract: IXTA52P10P IXTA36P15P IXTN40P50P IXTQ52P10P sot-227 footprint IXTA10P50P ixtq IXTH10P50 IXTH10P50P
    Text: IXYS POWER Efficiency through Technology N EW P RO D U C T B RIE F PolarPTM P-Channel Power MOSFETs Next Generation P-Channel Power MOSFETs -100V to -500V MAY 2008 OVERVIEW IXYS’ PolarP P-Channel Power MOSFETs are designed to bring a more cost-effective


    Original     		PDF -100V -500V IXTA52P10P FQB34P10 IXTA52P10P -100V, O-263 to-247 to-220 to-3p IXTA36P15P IXTN40P50P IXTQ52P10P sot-227 footprint IXTA10P50P ixtq IXTH10P50 IXTH10P50P

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    p-CHANNEL POWER MOSFET 600v

    Abstract: IXTH20P50P IXTP28P065T 014 IR MOSFET Transistor P channel MOSFET 10A ixtq IXTA36P15P IXTA76P10T IXTH16P60P IXTK32P60P
    Text: NEW PRO D U CT B RIEF Introducing P-Channel Power MOSFETs next generation p-channel power mosfets -50v to -600v SEPTEMBER 2008 OVERVIEW IXYS has reinforced its P-Channel Power MOSFET portfolio with the introduction of two advanced new families; TrenchPTM and PolarPTM. These families take


    Original     		PDF -600v -150V p-CHANNEL POWER MOSFET 600v IXTH20P50P IXTP28P065T 014 IR MOSFET Transistor P channel MOSFET 10A ixtq IXTA36P15P IXTA76P10T IXTH16P60P IXTK32P60P

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


    Original     		PDF D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250