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    IXYS Corporation IXTP60N10TM

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    60N10T

    Abstract: IXTP60N10T IXTP60N10 IXTP60N10TM
    Text: Preliminary Technical Information IXTP60N10TM TrenchMVTM Power MOSFET VDSS ID25 = 100V = 33A Ω ≤ 19mΩ RDS on N-Channel Enhancement Mode Avalanche Rated OVERMOLDED TO-220 W/ FORMED LEAD (IXTP.M) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C


    Original     		PDF IXTP60N10TM O-220 062in. 60N10T 7-08-A IXTP60N10T IXTP60N10 IXTP60N10TM

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    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchMVTM Power MOSFET VDSS ID25 IXTP60N10TM = 100V = 33A Ω ≤ 19mΩ RDS on N-Channel Enhancement Mode Avalanche Rated OVERMOLDED TO-220 W/ FORMED LEAD (IXTP.M) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C


    Original     		PDF IXTP60N10TM O-220 60N10T 7-08-A