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    IXTJ4N150 Search Results

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    IXTJ4N150 Price and Stock

    Littelfuse Inc IXTJ4N150

    MOSFET N-CH 1500V 2.5A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTJ4N150 Tube 1
    • 1 $11.72
    • 10 $11.72
    • 100 $7.481
    • 1000 $11.72
    • 10000 $11.72
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    Newark IXTJ4N150 Bulk 300
    • 1 -
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    • 100 -
    • 1000 $7.08
    • 10000 $7.08
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    IXYS Corporation IXTJ4N150

    MOSFETs High Voltage Power MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTJ4N150
    • 1 $11.73
    • 10 $11.73
    • 100 $7.51
    • 1000 $7.42
    • 10000 $7.42
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    Future Electronics IXTJ4N150 Tube 300
    • 1 -
    • 10 -
    • 100 $7.22
    • 1000 $7.11
    • 10000 $7.11
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    TME IXTJ4N150 1
    • 1 $10.51
    • 10 $7.8
    • 100 $7.27
    • 1000 $7.27
    • 10000 $7.27
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    IXTJ4N150 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTJ4N150 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1500V 2.5A ISOTO-247 Original PDF

    IXTJ4N150 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXTJ4N150 High Voltage Power MOSFET VDSS ID25 = = 1500V 2.5A 6Ω RDS on ≤ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings


    Original
    IXTJ4N150 O-247TM E153432 100ms 4N150 02-23-12-B PDF

    Untitled

    Abstract: No abstract text available
    Text: IXTJ4N150 High Voltage Power MOSFET VDSS ID25 = = 1500V 2.5A 6Ω RDS on ≤ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500


    Original
    IXTJ4N150 O-247TM E153432 100ms 4N150 09-12-12-C PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXTJ4N150 High Voltage Power MOSFET VDSS ID25 = = 1500V 2.5A 6Ω RDS on ≤ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings


    Original
    IXTJ4N150 O-247TM E153432 100ms 4N150 09-12-12-C PDF