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IXYS Corporation IXTA240N055T MOSFET N-CH 55V 240A TO263
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DigiKey	IXTA240N055T	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXTA240N055T7 MOSFET N-CH 55V 240A TO263-7
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DigiKey	IXTA240N055T7	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Integrated Circuits Division IXTA240N055T MOSFET DIS.240A 55V N-CH TO263(D2PAK) TRENCHMV SMT
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Ozdisan Elektronik	IXTA240N055T					1 $2.61261 10 $2.61261 100 $2.3751 1000 $2.3751 10000 $2.3751	Get Quote

IXTA240N055T Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXTA240N055T		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 55V 240A TO-263		Original	PDF
IXTA240N055T7		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 55V 240A TO-263-7		Original	PDF

IXTA240N055T Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
240N055T Abstract: IXTA240N055T7 Text: Preliminary Technical Information TrenchMVTM Power MOSFET IXTA240N055T7 VDSS ID25 RDS on = 55 V = 240 A Ω ≤ 3.6 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	IXTA240N055T7 O-263 240N055T 11-16-06-B 240N055T IXTA240N055T7	PDF
Untitled Abstract: No abstract text available Text: Preliminary Technical Information TrenchMVTM Power MOSFET IXTA240N055T IXTP240N055T VDSS ID25 RDS on = 55 V = 240 A Ω ≤ 3.6 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	IXTA240N055T IXTP240N055T O-263 240N055T 11-16-06-B	PDF
IXTA240N055T Abstract: IXTP240N055T 240N055T Text: Preliminary Technical Information IXTA240N055T IXTP240N055T TrenchMVTM Power MOSFET VDSS ID25 RDS on = 55 V = 240 A Ω ≤ 3.6 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	IXTA240N055T IXTP240N055T O-263 O-220) 240N055T 11-16-06-B IXTA240N055T IXTP240N055T 240N055T	PDF
Untitled Abstract: No abstract text available Text: Preliminary Technical Information TrenchMVTM Power MOSFET VDSS ID25 IXTA240N055T7 RDS on = 55 V = 240 A Ω ≤ 3.6 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	IXTA240N055T7 240N055T 11-16-06-B	PDF
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS	PDF
1262-33 Abstract: IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T Text: TrenchMV 55V-100V Power MOSFETs The ISOPLUS™ Advantage All IXYS ISOPLUS packages are manufactured with an internal direct-copper-bonded (DCB) isolated substrate, are UL certified and provide integral backside case isolation. These packages provide high isolation capability (up to 2500V), improve creepage distance and dramatically reduce total thermal resistance.	Original	5V-100V) O-247 PLUS220 ISOPLUS220TM PLUS220SMD O-252 O-220 O-263 1262-33 IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T	PDF