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IXYS Corporation IXSN50N60BD2 IGBT MOD 600V 75A 250W SOT227B
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DigiKey	IXSN50N60BD2	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXSN50N60BD3 IGBT Transistors 75 Amps 600V 2.5 Rds
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Mouser Electronics	IXSN50N60BD3					1 - 10 - 100 - 1000 - 10000 -	Get Quote

IXSN50N60 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXSN50N60BD2		IXYS	600V high speed IGBT with HiPerFRED		Original	PDF
IXSN50N60BD3		IXYS	600V high speed IGBT with HiPerFRED		Original	PDF
IXSN50N60U1		IXYS	IGBT With Diode		Scan	PDF

IXSN50N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: IXSN 50N60BD2 IXSN 50N60BD3 HIGH Speed IGBT with HiPerFRED Short Circuit SOA Capability Buck & boost configurations IGBT Preliminary data .BD2 .BD3 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	PDF	50N60BD2 50N60BD3 60-06B
BD3 diode Abstract: IXSN50N60BD2 IXSN50N60BD3 50N60 Text: IXSN 50N60BD2 IXSN 50N60BD3 HIGH Speed IGBT with HiPerFRED Short Circuit SOA Capability Buck & boost configurations IGBT Preliminary data .BD2 .BD3 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	PDF	50N60BD2 50N60BD3 torqu100 60-06B BD3 diode IXSN50N60BD2 IXSN50N60BD3 50N60
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBT with HiPerFRED VCES IC25 VCE sat tfi IXSN 50N60BD2 IXSN 50N60BD3 Buck & boost configurations IGBT Preliminary data sheet .BD2 .BD3 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	PDF	50N60BD2 50N60BD3 OT-227B, IXSN50N60BD2 0-06A
Untitled Abstract: No abstract text available Text: IXSN 50N60BD2 IXSN 50N60BD3 HIGH Speed IGBT with HiPerFRED Short Circuit SOA Capability Buck & boost configurations IGBT Preliminary data .BD2 .BD3 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	PDF	50N60BD2 50N60BD3 60-06B
Untitled Abstract: No abstract text available Text: 4bflfc.E2b G G D 1 7 C11 3ÖT • IXY □IXYS IGBT with Diode IXSN50N60U1 I, CES High Short Circuit SOA Capability CE sat = 53 A = 600 V = 2.5 V 2 ■ 4" é 'T n Symbol Test Conditions VcES T, = 25°C to 150°C 600 V Vo» Tj = 25°C to 150°C; R ^ = 1 MQ	OCR Scan	PDF	IXSN50N60U1 OT-227 E72873 D-68619
IXSN50N60U1 Abstract: 25CC E72873 50N60 50N60U1 Text: 4 b û b 2 2 b □ □ □ 1 7 ‘ìl 3flT • IX Y □IXYS IGBT with Diode IXSN50N60U1 >c V .„ High Short Circuit SOA Capability =53A = 600 V VcE<sa„ = 2-5 V 2 4 S ym bol T e st C o n d itio n s 'T l M axim um R a tin g s VcES T j = 25°C to 150°C 600	OCR Scan	PDF	IXSN50N60U1 D-68619 25CC E72873 50N60 50N60U1
diode u2 40 Abstract: 48 H diode DIODE U2 70 IXSH24N60AU1 IXSN35N120AU1 IXSN35N100U1 IXSX35N120AU1 h 48 diode diode u2 34 ixsn80n60 Text: Discrete IGBT with Fast Diode u^aHighs IGBT/Diode Combi-Pack S series with SCSOA capability tQBTs=su^ q25 Vcss min V A V CE SAT) max V TO-247(H) V TO-268AA (T) TO-264 (K) SOT-227B (N> typ ns PLUS247 (X) Case style ► N eiV ISOPLUS247™ (R) Case style	OCR Scan	PDF	O-264 O-247 O-268AA OT-227B PLUS247TM ISOPLUS247TM IXSH24N60BD1 IXSH30N60U1 IXSN62N60U1 IXSN35N100U1* diode u2 40 48 H diode DIODE U2 70 IXSH24N60AU1 IXSN35N120AU1 IXSN35N100U1 IXSX35N120AU1 h 48 diode diode u2 34 ixsn80n60
IXGH20N60U1 Abstract: IXGH17N100AU1 SOT227B package IXSH20N60U1 GH20N60AU1 1XYS UltraFast 5-40 kHz E1S4 TI231 IGBT 20A 600V ABB Text: Mb E D • MböbEEb 0000^20 7 H I X Y 'PS !-! S I X Y S CORP □IXYS PRELIMINARY TECHNICAL INFORMATION Data Book NO.91750A October 1991 "U1" Series IGBTs IGBTs with Interna! Fast Recovery Rectifier Features High Voltage IGBT and Anti-Parallel in One Package	OCR Scan	PDF	1750A 30KHz T-39-15 IXGH10N60U1 IXGH10N60AU1 IXGH20N60U1 IXGH17N100AU1 SOT227B package IXSH20N60U1 *GH20N60AU1 1XYS UltraFast 5-40 kHz E1S4 TI231 IGBT 20A 600V ABB