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    IXGR55N120A3H1 Price and Stock

    IXYS Corporation IXGR55N120A3H1

    IGBT 1200V 70A 200W ISOPLUS247
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    DigiKey IXGR55N120A3H1 Tube 300
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    Mouser Electronics IXGR55N120A3H1
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    Future Electronics IXGR55N120A3H1 Tube 27 Weeks 300
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    TTI IXGR55N120A3H1 Tube 300
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    TME IXGR55N120A3H1 1
    • 1 $22.4
    • 10 $17.75
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    Littelfuse Inc IXGR55N120A3H1

    Disc Igbt Pt-Hifrequency Isoplus247/ Tube |Littelfuse IXGR55N120A3H1
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    Newark IXGR55N120A3H1 Bulk 300
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    IXYS Integrated Circuits Division IXGR55N120A3H1

    IGBT DIS.DIODE SiC SINGLE 30A 1200V GENX3 ISOPLUS2
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    Ozdisan Elektronik IXGR55N120A3H1
    • 1 $35.99031
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    • 100 $33.6358
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    IXGR55N120A3H1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXGR55N120A3H1 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 70A 200W ISOPLUS247 Original PDF

    IXGR55N120A3H1 Datasheets Context Search

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    Abstract: No abstract text available
    Text: Advance Technical Information GenX3TM 1200V IGBT w/ Diode IXGR55N120A3H1 Electrically Isolated Tab Ultra-Low-Vsat PT IGBTs for up to 3kHz Switching Symbol Test Conditions VCES = 1200V IC110 = 30A VCE(sat) ≤ 2.35V ISOPLUS 247TM Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		PDF IXGR55N120A3H1 IC110 247TM IF110 338B2

    IXGR55N120A3H1

    Abstract: IF110 ISOPLUS247
    Text: Advance Technical Information IXGR55N120A3H1 GenX3TM 1200V IGBT w/ Diode Electrically Isolated Tab Ultra-Low-Vsat PT IGBTs for up to 3kHz Switching VCES = 1200V IC110 = 30A VCE(sat) ≤ 2.35V ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		PDF IXGR55N120A3H1 IC110 247TM IF110 338B2 IXGR55N120A3H1 IF110 ISOPLUS247