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    IXGQ90N33TBD1

    Abstract: IXGQ90N33 90n33 90N33TB IXgq90n ixgq90n33t
    Text: IXGQ90N33TBD1 Trench Gate IGBT VCES = = ICP VCE sat ≤ For PDP Applications Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings VGEM 330 V ±30 V 90 A 330V 360A 1.6V TO-3P IC25 TC = 25°C, IGBT chip capability ICP TJ ≤ 150°C, tp ≤ 1 s


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    PDF IXGQ90N33TBD1 90N33TB 5-27-08-B IXGQ90N33TBD1 IXGQ90N33 90n33 IXgq90n ixgq90n33t